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1. 发明授权

US07248544B2 Optical head and recording and/or reproducing apparatus employing same 失效
标题翻译：光头以及使用其的记录和/或再现装置
公开(公告)号：US07248544B2
公开(公告)日：2007-07-24
申请号：US10849158
申请日：2004-05-20
申请人： Masahiro Saito , Norio Fukasawa , Kiyoshi Toyota , Junichi Suzuki , Minoru Kubo , Souichi Murakami
发明人： Masahiro Saito , Norio Fukasawa , Kiyoshi Toyota , Junichi Suzuki , Minoru Kubo , Souichi Murakami
IPC分类号： G11B7/00
CPC分类号： G11B7/1275 , G11B7/131 , G11B7/1353 , G11B7/1359 , G11B7/1395 , G11B7/22
摘要： Disclosed is an optical head in which position adjustment of a photodetector light receiving surface or component parts may be simplified, production costs may be reduced and operational reliability may be improved. The optical head includes a light source 22, radiating light of a preset wavelength, an objective lens 27 for condensing the outgoing light from the light source 22 on an optical disc 2 and for condensing the return light from the optical disc 2, a beam splitter 25 for branching the optical path of the return light reflected by the optical disc 2, and for collimating the branched return light so as to be parallel to the outgoing light from the light source 22, a composite optical component including a splitting prism 30 arranged on a site of incidence of the branched return light for spatially splitting the return light, and a light receiving unit for receiving plural return light beams spatially split by the splitting prism 30 for producing focusing error signals.
摘要翻译：公开了一种可以简化光电检测器光接收表面或部件的位置调整的光学头，可以降低生产成本并且可以提高操作可靠性。光头包括一个照射预定波长的光源22，用于将来自光源22的输出光聚焦在光盘2上并用于聚光来自光盘2的返回光的物镜27，一个分束器 25，用于分支由光盘2反射的返回光的光路，并且用于使分支的返回光准直以与来自光源22的出射光平行;复合光学部件，包括分离棱镜30，其布置在用于空间分离返回光的分支返回光的入射部位，以及用于接收由分割棱镜30空间分裂的多个返回光束的光接收单元，用于产生聚焦误差信号。

2. 发明授权

US07135721B2 Heterojunction bipolar transistor having reduced driving voltage requirements 有权
标题翻译：具有降低的驱动电压要求的异质结双极晶体管
公开(公告)号：US07135721B2
公开(公告)日：2006-11-14
申请号：US10872477
申请日：2004-06-22
申请人： Kenji Toyoda , Koichiro Yuki , Takeshi Takagi , Teruhito Ohnishi , Minoru Kubo
发明人： Kenji Toyoda , Koichiro Yuki , Takeshi Takagi , Teruhito Ohnishi , Minoru Kubo
IPC分类号： H01L29/739 , H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336
CPC分类号： H01L29/7378
摘要： The bipolar transistor of the present invention includes a Si collector buried layer, a first base region made of a SiGeC layer having a high C content, a second base region made of a SiGeC layer having a low C content or a SiGe layer, and a Si cap layer 14 including an emitter region. The C content is less than 0.8% in at least the emitter-side boundary portion of the second base region. This suppresses formation of recombination centers due to a high C content in a depletion layer at the emitter-base junction, and improves electric characteristics such as the gain thanks to reduction in recombination current, while low-voltage driving is maintained.
摘要翻译：本发明的双极晶体管包括Si集电极掩埋层，由具有高C含量的SiGeC层制成的第一基极区域，具有低C含量的SiGeC层或SiGe层制成的第二基极区域，以及 Si覆盖层14包括发射极区域。至少在第二基极区域的发射极边界部分中，C含量小于0.8％。这抑制了由于在发射极 - 基极结处的耗尽层中的高C含量而导致的复合中心的形成，并且由于复合电流的降低而改善了诸如增益的电特性，同时维持了低电压驱动。

3. 发明授权

US07049198B2 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07049198B2
公开(公告)日：2006-05-23
申请号：US10377771
申请日：2003-03-04
申请人： Koichiro Yuki , Tohru Saitoh , Minoru Kubo , Kiyoshi Ohnaka , Akira Asai , Koji Katayama
发明人： Koichiro Yuki , Tohru Saitoh , Minoru Kubo , Kiyoshi Ohnaka , Akira Asai , Koji Katayama
IPC分类号： H01L21/00
CPC分类号： H01L21/26506 , H01L21/2658 , H01L29/1054 , H01L29/165 , H01L29/167
摘要： An S1-yGey layer (where 0
摘要翻译：按照此顺序形成S 1〜Y Ge层（其中0

4. 发明授权

US06919253B2 Method of forming a semiconductor device including simultaneously forming a single crystalline epitaxial layer and a polycrystalline or amorphous layer 失效
标题翻译：形成包括同时形成单晶外延层和多晶或非晶层的半导体器件的方法
公开(公告)号：US06919253B2
公开(公告)日：2005-07-19
申请号：US10359553
申请日：2003-02-07
申请人： Tohru Saitoh , Katsuya Nozawa , Minoru Kubo , Shigetaka Aoki
发明人： Tohru Saitoh , Katsuya Nozawa , Minoru Kubo , Shigetaka Aoki
IPC分类号： H01L21/20 , H01L21/205 , H01L21/331
CPC分类号： H01L29/66242 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02639
摘要： A method of fabricating a semiconductor device according to the present invention includes a step A of forming a polycrystalline or amorphous preliminary semiconductor layer on a surface of a substrate so as to have an opening portion and a step B of simultaneously forming an epitaxial growth layer on an exposed portion of a surface of the substrate through the opening portion and a non-epitaxial growth layer on the preliminary semiconductor layer using a CVD method while heating the substrate inside a reaction chamber by means of a heat source inside the reaction chamber, the epitaxial growth layer being made of single crystalline semiconductor, and the non-epitaxial growth layer being comprised of a polycrystalline or amorphous semiconductor layer.
摘要翻译：根据本发明的制造半导体器件的方法包括步骤A，其在衬底的表面上形成多晶或无定形初级半导体层以具有开口部分和在同时形成外延生长层的步骤B上通过开口部分的衬底的暴露部分和初步半导体层上的非外延生长层，使用CVD方法，同时通过反应室内的热源在反应室内加热衬底，外延生长层由单晶半导体制成，非外延生长层由多晶或非晶半导体层组成。

5. 发明授权

US06890834B2 Electronic device and method for manufacturing the same 有权
标题翻译：电子设备及其制造方法
公开(公告)号：US06890834B2
公开(公告)日：2005-05-10
申请号：US10163691
申请日：2002-06-06
申请人： Hiroyoshi Komobuchi , Minoru Kubo , Masahiko Hashimoto , Michio Okajima , Shinichi Yamamoto
发明人： Hiroyoshi Komobuchi , Minoru Kubo , Masahiko Hashimoto , Michio Okajima , Shinichi Yamamoto
IPC分类号： H01L25/00 , B81B7/00 , G01J5/10 , H01L23/10 , H01L27/146 , H01L31/0203 , H01L21/30
CPC分类号： B81B7/0077 , G01J5/10 , H01L23/10 , H01L27/14609 , H01L27/14618 , H01L27/14649 , H01L27/14687 , H01L31/0203 , H01L2924/0002 , H01L2924/01079 , H01L2924/16235 , H01L2924/00
摘要： An Al film is formed on a cap wafer and the Al film is patterned into a ring-shaped film. Dry etching is performed by using the ring-shaped film as a mask to form a drum portion enclosing a recess portion to provide a vacuum dome. After forming a depth of cut into the substrate portion of the cap wafer, the cap wafer is placed on a main body wafer having an infrared area sensor formed thereon. Then, the ring-shaped film of the cap wafer and the ring-shaped film of the main body wafer are joined to each other by pressure bonding to form a ring-shaped joining portion.
摘要翻译：在盖晶片上形成Al膜，将Al膜图案化成环状膜。通过使用环形膜作为掩模进行干蚀刻以形成包围凹部的鼓部，以提供真空圆顶。在盖片的基板部分形成切割深度之后，将盖片放置在其上形成有红外区域传感器的主体晶片上。然后，将盖片的环状膜和主体晶片的环状膜通过压力接合而形成环状的接合部。

6. 发明申请

US20050066887A1 Semiconductor device and method of fabricating semiconductor device 失效
标题翻译：半导体器件及半导体器件的制造方法
公开(公告)号：US20050066887A1
公开(公告)日：2005-03-31
申请号：US10359553
申请日：2003-02-07
申请人： Tohru Saitoh , Katsuya Nozawa , Minoru Kubo , Shigetaka Aoki
发明人： Tohru Saitoh , Katsuya Nozawa , Minoru Kubo , Shigetaka Aoki
IPC分类号： H01L21/20 , H01L21/205 , H01L21/331 , H01L29/739 , H01L31/0336
CPC分类号： H01L29/66242 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02639
摘要： A method of fabricating a semiconductor device according to the present invention includes a step A of forming a polycrystalline or amorphous preliminary semiconductor layer on a surface of a substrate so as to have an opening portion and a step B of simultaneously forming an epitaxial growth layer on an exposed portion of a surface of the substrate through the opening portion and a non-epitaxial growth layer on the preliminary semiconductor layer using a CVD method while heating the substrate inside a reaction chamber by means of a heat source inside the reaction chamber, the epitaxial growth layer being made of single crystalline semiconductor, and the non-epitaxial growth layer being comprised of a polycrystalline or amorphous semiconductor layer.
摘要翻译：根据本发明的制造半导体器件的方法包括步骤A，其在衬底的表面上形成多晶或无定形初级半导体层以具有开口部分和在同时形成外延生长层的步骤B上通过开口部分的衬底的暴露部分和初步半导体层上的非外延生长层，使用CVD方法，同时通过反应室内的热源在反应室内加热衬底，外延生长层由单晶半导体制成，非外延生长层由多晶或非晶半导体层组成。

7. 发明授权

US06844227B2 Semiconductor devices and method for manufacturing the same 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US06844227B2
公开(公告)日：2005-01-18
申请号：US10203891
申请日：2001-12-26
申请人： Minoru Kubo , Yo Ichikawa , Akira Asai , Takahiro Kawashima
发明人： Minoru Kubo , Yo Ichikawa , Akira Asai , Takahiro Kawashima
IPC分类号： H01L21/04 , H01L21/28 , H01L21/318 , H01L21/82 , H01L21/8238 , H01L27/092 , H01L29/24 , H01L29/51 , H01L29/80 , H01L21/335 , H01L21/8234
CPC分类号： H01L29/518 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/318 , H01L21/8213 , H01L21/823807 , H01L27/092 , H01L29/1054 , H01L29/1608 , H01L29/66068 , H01L29/802
摘要： In a field effect transistor, an Si layer, an SiC (Si1-yCy) channel layer, a CN gate insulating film made of a carbon nitride layer (CN) and a gate electrode are deposited in this order on an Si substrate. The thickness of the SiC channel layer is set to a value that is less than or equal to the critical thickness so that a dislocation due to a strain does not occur according to the carbon content. A source region and a drain region are formed on opposite sides of the SiC channel layer, and a source electrode and a drain electrode are provided on the source region and the drain region, respectively.
摘要翻译：在场效应晶体管中，在Si衬底上依次沉积Si层，SiC（Si1-yCy）沟道层，由氮化碳层（CN）和栅极形成的CN栅极绝缘膜。将SiC沟道层的厚度设定为小于或等于临界厚度的值，使得根据碳含量不会发生由于应变引起的位错。在SiC沟道层的相对侧上形成源极区域和漏极区域，在源极区域和漏极区域分别设置源电极和漏极电极。

8. 发明授权

US6136626A Semiconductor light-emitting device and production method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US6136626A
公开(公告)日：2000-10-24
申请号：US243777
申请日：1999-02-03
申请人： Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Kiyoshi Ohnaka , Yuzaburo Ban , Minoru Kubo
发明人： Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Kiyoshi Ohnaka , Yuzaburo Ban , Minoru Kubo
IPC分类号： H01L33/00 , H01L33/02 , H01L33/32 , H01L33/64 , H01S5/042 , H01S5/20 , H01S5/30 , H01S5/323 , H01S5/327 , H01L21/20
CPC分类号： H01L33/025 , H01L33/007 , H01L33/32 , H01L33/325 , H01S5/305 , H01S5/32341 , H01L33/64 , H01S5/0422 , H01S5/2059 , H01S5/3063 , H01S5/327
摘要： A semiconductor light-emitting device with a double hetero structure, including: an active layer made of Ga.sub.1-x In.sub.x N (0.ltoreq.x.ltoreq.0.3) doped with a p-type impurity and an n-type impurity; and first and second cladding layers provided so as to sandwich the active layer.
摘要翻译：一种具有双异质结构的半导体发光器件，包括：由掺杂有p型杂质和n型杂质的Ga1-xInxN（0≤x≤0.3）制成的有源层; 以及设置成夹持有源层的第一和第二覆层。

9. 发明授权

US5895225A Semiconductor light-emitting device and production method thereof 失效
公开(公告)号：US5895225A
公开(公告)日：1999-04-20
申请号：US978848
申请日：1997-11-26
申请人： Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Kiyoshi Ohnaka , Yuzaburo Ban , Minoru Kubo
发明人： Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Kiyoshi Ohnaka , Yuzaburo Ban , Minoru Kubo
IPC分类号： H01L33/00 , H01L33/02 , H01L33/06 , H01L33/32 , H01L33/36 , H01L33/64 , H01S5/02 , H01S5/022 , H01S5/024 , H01S5/042 , H01S5/16 , H01S5/20 , H01S5/223 , H01S5/30 , H01S5/323 , H01S5/327 , H01S3/02
CPC分类号： H01L33/642 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/81 , H01L33/007 , H01L33/025 , H01L33/32 , H01L33/325 , H01S5/2231 , H01S5/305 , H01S5/32341 , H01S5/327 , H01L2224/73204 , H01L2224/83192 , H01L2933/0075 , H01S5/0213 , H01S5/02236 , H01S5/0224 , H01S5/02272 , H01S5/0422 , H01S5/162 , H01S5/2059 , H01S5/2063 , H01S5/3063 , H01S5/3086
摘要： A semiconductor light-emitting device with a double hetero structure, including: an active layer made of Ga.sub.1-x In.sub.x N (0.ltoreq.x.ltoreq.0.3) doped with a p-type impurity and an n-type impurity; and first and second cladding layers provided so as to sandwich the active layer.

10. 发明授权

US5274248A Light-emitting device with II-VI compounds 失效
标题翻译：具有II-VI化合物的发光装置
公开(公告)号：US5274248A
公开(公告)日：1993-12-28
申请号：US892888
申请日：1992-06-03
申请人： Toshiya Yokogawa , Tadashi Narusawa , Minoru Kubo
发明人： Toshiya Yokogawa , Tadashi Narusawa , Minoru Kubo
IPC分类号： H01L33/00 , H01L33/06 , H01L33/28
CPC分类号： H01L33/285 , B82Y20/00 , H01L33/0083 , H01L33/0087 , H01L33/06
摘要： The present invention provides a p-n junction type blue luminescence device forming a p-type hole injection layer and having high light-emission efficiency. On an n-conduction type ZnS substrate 111, there is formed a multiquantum well structure 112 alternately laminating a p-type ZnTe layer 112a and a non-doped ZnS layer 112b. And, a positive electrode 113 and a negative electrode 114 are provided on the multiquantum well structure 112 and the ZnS crystal, respectively. By applying forward bias voltage on this light-emitting device, electrons are injected from the n-type ZnS substrate to the multiquantum well structure 112. Then, these electrons are recombined with holes in the multiquantum well structure 112, so as to emit blue luminescence light. Thus, it becomes possible to easily and reproducibly obtain a p-conduction type hole injection layer so as to realize highly concentrated carrier injection and obtain high efficiency in emitting blue luminescence light.
摘要翻译：本发明提供一种形成p型空穴注入层并具有高发光效率的p-n结型蓝色发光元件。在n导电型ZnS基板111上形成交替层叠p型ZnTe层112a和非掺杂ZnS层112b的多量子阱结构112。并且，在多量子阱结构体112和ZnS晶体上分别设置有正极113和负极114。通过在该发光器件上施加正向偏置电压，将电子从n型ZnS衬底注入到多量子阱结构112中。然后，这些电子与多量子阱结构112中的空穴重新结合，以发射蓝色发光光。因此，可以容易且可重复地获得p导电型空穴注入层，从而实现高度集中的载流子注入，并且获得发射蓝色发光的高效率。

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