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51. 发明申请

US20100008562A1 LATENT IMAGE INTENSITY DISTRIBUTION EVALUATION METHOD, METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE AND LATENT IMAGE INTENSITY DISTRIBUTION EVALUATION PROGRAM 审中-公开
标题翻译：最小图像强度分布评估方法，制造半导体器件的方法和专利图像强度分布评估程序
公开(公告)号：US20100008562A1
公开(公告)日：2010-01-14
申请号：US12500039
申请日：2009-07-09
申请人： Masanori TAKAHASHI , Satoshi TANAKA
发明人： Masanori TAKAHASHI , Satoshi TANAKA
IPC分类号： G06K9/00 , G06F17/50
CPC分类号： G03F7/70675 , G03F7/705 , G06T7/0006 , G06T7/136 , G06T2207/30148
摘要： A latent image intensity distribution calculating unit calculates a latent image intensity distribution in the thickness direction of a resist film based on an exposure condition and a mask pattern. An evaluated position calculating unit calculates an evaluated position in the thickness direction of the resist film based on the latent image intensity distribution calculated by the latent image intensity distribution calculating unit. A pattern evaluating unit evaluates a characteristic of a pattern formed on the resist film based on latent image intensity at the evaluated position calculated by the evaluated position calculating unit.
摘要翻译：潜像强度分布计算单元基于曝光条件和掩模图案计算抗蚀剂膜的厚度方向上的潜像强度分布。评估位置计算单元基于由潜像强度分布计算单元计算的潜像强度分布，计算抗蚀剂膜的厚度方向的评估位置。图案评估单元基于由评估位置计算单元计算的评估位置处的潜像强度来评估形成在抗蚀剂膜上的图案的特性。

52. 发明申请

US20090291512A1 SEMICONDUCTOR DEVICE PATTERN VERIFICATION METHOD, SEMICONDUCTOR DEVICE PATTERN VERIFICATION PROGRAM, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：半导体器件图案验证方法，半导体器件图案验证程序和半导体器件制造方法
公开(公告)号：US20090291512A1
公开(公告)日：2009-11-26
申请号：US12470289
申请日：2009-05-21
申请人： Kyoko IZUHA , Satoshi TANAKA
发明人： Kyoko IZUHA , Satoshi TANAKA
IPC分类号： H01L21/66 , G06F17/50
CPC分类号： G06T7/0004 , G03F1/36 , G06T2207/30148
摘要： Information on a transfer pattern created from a design pattern corresponding to a pattern to be formed on a substrate is acquired as pattern transfer information. The design pattern is compared with the transfer pattern and, on the basis of the feature quantity obtained from the comparison, the pattern transfer information and the design pattern are classified. A threshold value is set for the feature quantity and, on the basis of the threshold value, the pattern transfer information and the design pattern are further classified. Then, verification is conducted to see if the transfer pattern satisfies the threshold value.
摘要翻译：获取关于从与衬底上形成的图案对应的设计图案创建的转印图案的信息作为图案转印信息。将设计图案与传送图案进行比较，并且基于从比较获得的特征量，对图案转印信息和设计图案进行分类。针对特征量设定阈值，并且基于阈值对图案转印信息和设计图案进一步进行分类。然后，进行验证，以确定转印图案是否满足阈值。

53. 发明申请

US20090233189A1 DEVICE AND METHOD FOR OBTAINING EXPOSURE CORRECTION INFORMATION, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于获取曝光校正信息的装置和方法以及半导体器件的制造方法
公开(公告)号：US20090233189A1
公开(公告)日：2009-09-17
申请号：US12401840
申请日：2009-03-11
申请人： Kazuya FUKUHARA , Satoshi TANAKA , Masamitsu ITOH , Soichi INOUE
发明人： Kazuya FUKUHARA , Satoshi TANAKA , Masamitsu ITOH , Soichi INOUE
IPC分类号： G03F1/00 , G03B27/54 , G03F7/20
CPC分类号： G03B27/54 , G03F7/70083 , G03F7/70133 , G03F7/70308
摘要： A method of obtaining exposure correction information includes adjusting intensity of light incident on a photomask so that intensity of light output from the photomask has a desired distribution, and includes obtaining the exposure correction information as a distribution of the adjusted intensity of light incident on the photomask.
摘要翻译：获得曝光校正信息的方法包括调整入射到光掩模上的光的强度，使得从光掩模输出的光的强度具有期望的分布，并且包括获得曝光校正信息作为调节的光入射到光掩模上的光的分布。

54. 发明申请

US20130230064A1 MASTER OSCILLATOR SYSTEM AND LASER APPARATUS 有权
标题翻译：主振荡器系统和激光设备
公开(公告)号：US20130230064A1
公开(公告)日：2013-09-05
申请号：US13597556
申请日：2012-08-29
申请人： Satoshi TANAKA , Hiroshi Tanaka , Osamu Wakabayashi
发明人： Satoshi TANAKA , Hiroshi Tanaka , Osamu Wakabayashi
IPC分类号： H01S3/10
CPC分类号： H01S3/10 , H01S3/005 , H01S3/08 , H01S3/08004 , H01S3/08009 , H01S3/105 , H01S3/1055 , H01S3/106 , H01S3/225 , H01S3/2333
摘要： A master oscillator system may include a grating configured to function as one resonator mirror in an optical resonator, a spectral bandwidth tuning unit configured to tune the spectral bandwidth of a laser beam transmitted within the optical resonator, a storage unit configured to store a control value of the spectral bandwidth tuning unit corresponding to a desired spectral bandwidth and a controller configured to control the spectral bandwidth tuning unit based on the control value stored in the storage unit.
摘要翻译：主振荡器系统可以包括被配置为用作光学谐振器中的一个谐振器反射镜的光栅，被配置为调节在光学谐振器内传输的激光束的光谱带宽的光谱带宽调谐单元，被配置为存储控制值的光谱带宽调谐单元，以及配置为基于存储在存储单元中的控制值来控制光谱带宽调谐单元的控制器。

55. 发明申请

US20130159944A1 FLARE MAP CALCULATING METHOD AND RECORDING MEDIUM 有权
标题翻译： FLARE MAP计算方法和记录介质
公开(公告)号：US20130159944A1
公开(公告)日：2013-06-20
申请号：US13615691
申请日：2012-09-14
申请人： Taiga UNO , Toshiya KOTANI , Satoshi TANAKA
发明人： Taiga UNO , Toshiya KOTANI , Satoshi TANAKA
IPC分类号： G06F17/50
CPC分类号： G03F7/70941 , G03F1/70
摘要： A flare map calculating method of an embodiment calculates an optical image intensity distribution in each division region set in a pattern region. Furthermore, an average value of the optical image intensity distribution is calculated in each division region. A pattern or plural patterns, which has a pattern density corresponding to the average value, is calculated as a corresponding density pattern in each division region. Furthermore, a density map, which represents a pattern density distribution within the pattern region, is generated based on the corresponding density pattern, and a flare map representing a flare intensity distribution within the pattern region is calculated by convolution integral of the density map and a point spread function.
摘要翻译：实施例的耀斑映射计算方法计算在图案区域中设置的每个划分区域中的光学图像强度分布。此外，在每个划分区域中计算出光学图像强度分布的平均值。在每个划分区域中计算具有对应于平均值的图案密度的图案或多个图案作为相应的浓度图案。此外，基于对应的浓度模式生成表示图案区域内的图案密度分布的密度图，并且通过密度图和a的卷积积分来计算表示图案区域内的耀斑强度分布的耀斑图点扩散功能。

56. 发明申请

US20120236884A1 LASER APPARATUS 有权
标题翻译：激光装置
公开(公告)号：US20120236884A1
公开(公告)日：2012-09-20
申请号：US13421116
申请日：2012-03-15
申请人： Junichi FUJIMOTO , Takahito KUMAZAKI , Toru SUZUKI , Satoshi TANAKA , Osamu WAKABAYASHI
发明人： Junichi FUJIMOTO , Takahito KUMAZAKI , Toru SUZUKI , Satoshi TANAKA , Osamu WAKABAYASHI
IPC分类号： H01S3/10
CPC分类号： H01S3/106 , H01S3/005 , H01S3/08004 , H01S3/08009 , H01S3/08036 , H01S3/0971 , H01S3/2316 , H01S3/2333
摘要： This disclosure is directed to widen an adjustable range of the spectral linewidth of laser light output from a laser apparatus. This laser apparatus may include: (1) an excitation source configured to excite a laser medium in a laser gain space, (2) an optical resonator including an output coupler arranged on one side of an optical path through the laser gain space and a wavelength dispersion element arranged on the other side of the optical path through the laser gain space, and (3) a switching mechanism configured to switch a beam-width magnification or reduction factor by placing or removing at least one beam-width change optical system for expanding or reducing a beam width in or from an optical path between the laser gain space and the wavelength dispersion element or by inverting orientation of the at least one beam-width change optical system in the optical path.
摘要翻译：本公开旨在扩大从激光设备输出的激光的谱线宽度的可调范围。该激光装置可以包括：（1）激励源，被配置为在激光增益空间中激发激光介质，（2）光学谐振器，包括布置在通过激光增益空间的光路的一侧上的输出耦合器，以及波长通过激光增益空间布置在光路的另一侧的色散元件，以及（3）配置为通过放置或去除至少一个用于扩展的光束宽度改变光学系统来切换光束宽度放大率或缩小因子的切换机构或者减小激光增益空间和波长色散元件之间的光路中的光束宽度，或者通过使光路中的至少一个光束宽度改变光学系统的取向反转。

57. 发明申请

US20120146086A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20120146086A1
公开(公告)日：2012-06-14
申请号：US13311050
申请日：2011-12-05
申请人： Yusuke YOKOBAYASHI , Satoshi TANAKA , Tatsuma SAITO
发明人： Yusuke YOKOBAYASHI , Satoshi TANAKA , Tatsuma SAITO
IPC分类号： H01L33/62
CPC分类号： H01L33/20 , H01L33/14 , H01L33/382 , H01L2224/14
摘要： A semiconductor light emitting device having an n-electrode and a p-electrode provided on the same surface side of a semiconductor film, wherein current spread in the semiconductor film is promoted, so that the improvements in luminous efficiency and reliability, the emission intensity uniformalization across the surface, and a reduction in the forward voltage, can be achieved. The semiconductor light emitting device includes a semiconductor film including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer; the n-electrode formed on an exposed surface of the n-type semiconductor layer exposed by removing parts of the p-type semiconductor layer, of the active layer, and of the n-type semiconductor layer with accessing from the surface side of the p-type semiconductor layer; and the p-electrode. A current guide portion having conductivity higher than that of the n-type semiconductor layer is provided on or in the n-type semiconductor layer over the p-type electrode.
摘要翻译：具有设置在半导体膜的同一表面侧上的n电极和p电极的半导体发光器件，其中促进半导体膜中的电流扩散，使得发光效率和可靠性的提高，发光强度均匀化跨越表面，并且可以实现正向电压的降低。半导体发光器件包括：包含n型半导体层，有源层和p型半导体层的半导体膜; 形成在n型半导体层的暴露表面上的n电极，通过从p型半导体层，有源层和n型半导体层的表面侧进入而露出的n型半导体层型半导体层; 和p电极。具有比n型半导体层高的导电率的电流引导部分设置在p型电极上的n型半导体层上或其中。

58. 发明申请

US20110065028A1 PATTERN GENERATING METHOD, MANUFACTURING METHOD OF MASK, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：图案生成方法，掩模制造方法和半导体器件的制造方法
公开(公告)号：US20110065028A1
公开(公告)日：2011-03-17
申请号：US12874756
申请日：2010-09-02
申请人： Katsuyoshi KODERA , Satoshi TANAKA , Toshiya KOTANI , Soichi INOUE
发明人： Katsuyoshi KODERA , Satoshi TANAKA , Toshiya KOTANI , Soichi INOUE
IPC分类号： G03F1/00 , G03F7/20
CPC分类号： G03F1/36
摘要： According to the embodiments, each of a main pattern of a mask to be transferred onto a substrate by using a lithography process, a first assist pattern that improves a resolution of an on-substrate pattern obtained by transferring the main pattern onto the substrate, and a second assist pattern that suppresses a transfer property of the first assist pattern onto the substrate is placed as a mask pattern.
摘要翻译：根据实施例，通过使用光刻工艺将要转印到基板上的掩模的主图案，提高通过将主图案转印到基板上而获得的基板上图案的分辨率的第一辅助图案，以及将第一辅助图案的转印特性抑制在基板上的第二辅助图案作为掩模图案。

59. 发明申请

US20110062484A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20110062484A1
公开(公告)日：2011-03-17
申请号：US12878197
申请日：2010-09-09
申请人： Satoshi TANAKA , Yusuke Yokobayashi
发明人： Satoshi TANAKA , Yusuke Yokobayashi
IPC分类号： H01L33/36 , H01L33/00
CPC分类号： H01L33/38 , H01L33/20
摘要： A light-emitting device which includes a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; and a light emitting layer provided between the first and second semiconductor layers, the device comprises a first electrode formed on the first semiconductor layer; a second electrode formed on the second semiconductor layer; and a light-transmissive electrode covering the second semiconductor layer and the second electrode, wherein contact between the second electrode and the second semiconductor layer is non-ohmic, and the second electrode has a stacked structure including a lower layer and an upper layer whose contact resistance with the light-transmissive electrode is lower than that of the lower layer, part of the second electrode being exposed through an opening formed in the light-transmissive electrode.
摘要翻译：一种发光器件，包括第一导电类型的第一半导体层; 第二导电类型的第二半导体层; 以及设置在所述第一和第二半导体层之间的发光层，所述器件包括形成在所述第一半导体层上的第一电极; 形成在所述第二半导体层上的第二电极; 以及覆盖所述第二半导体层和所述第二电极的透光电极，其中所述第二电极和所述第二半导体层之间的接触是非欧姆的，并且所述第二电极具有堆叠结构，所述层叠结构包括下层和上层，与透光电极的电阻低于下层的电阻，第二电极的一部分通过形成在透光电极中的开口露出。

60. 发明申请

US20100285770A1 WIRELESS COMMUNICATION SYSTEM 有权
标题翻译：无线通信系统
公开(公告)号：US20100285770A1
公开(公告)日：2010-11-11
申请号：US12839932
申请日：2010-07-20
申请人： Kumiko TAKIKAWA , Satoshi TANAKA , Yoshiyasu TASHIRO
发明人： Kumiko TAKIKAWA , Satoshi TANAKA , Yoshiyasu TASHIRO
IPC分类号： H04B1/28
CPC分类号： H01L23/66 , H01L23/48 , H01L23/4952 , H01L23/49541 , H01L23/49575 , H01L24/06 , H01L27/0203 , H01L29/41708 , H01L2224/04042 , H01L2224/05093 , H01L2224/05553 , H01L2224/05554 , H01L2224/05624 , H01L2224/06 , H01L2224/16225 , H01L2224/32225 , H01L2224/48247 , H01L2224/48465 , H01L2224/73204 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01033 , H01L2924/01082 , H01L2924/014 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15787 , H01L2924/181 , H01L2924/30107 , H03F3/19 , H03F3/68 , H03F2200/294 , H03F2200/429 , H03F2200/451 , H04B1/0075 , H04W52/52 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A wireless communication system includes: a filter; and a semiconductor chip including a signal processing integrated circuit having an amplifier, wherein a main surface of the semiconductor chip is provided with a plurality of electrode terminals along an edge portion thereof; wherein the amplifier has a transistor including a control electrode, a first electrode through which a signal is outputted, and a second electrode to which a voltage is applied; wherein the control electrode, the first electrode and the second electrode of the transistor are connected to the electrode terminals, respectively; and wherein none of wirings are arranged between the electrode terminals and placements of the control electrode, the first electrode and the second electrode, making space between the electrodes and the electrode terminals narrow.
摘要翻译：无线通信系统包括：滤波器; 以及包括具有放大器的信号处理集成电路的半导体芯片，其中半导体芯片的主表面沿其边缘部分设置有多个电极端子; 其中放大器具有晶体管，其包括控制电极，输出信号的第一电极和施加电压的第二电极; 其中所述晶体管的所述控制电极，所述第一电极和所述第二电极分别连接到所述电极端子; 并且其中在所述电极端子和所述控制电极，所述第一电极和所述第二电极的布置之间没有布线，使得所述电极和所述电极端子之间的空间变窄。

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