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1. 发明授权

US08860067B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08860067B2
公开(公告)日：2014-10-14
申请号：US13311050
申请日：2011-12-05
申请人： Yusuke Yokobayashi , Satoshi Tanaka , Tatsuma Saito
发明人： Yusuke Yokobayashi , Satoshi Tanaka , Tatsuma Saito
IPC分类号： H01L33/62 , H01L33/14 , H01L33/20 , H01L33/38
CPC分类号： H01L33/20 , H01L33/14 , H01L33/382 , H01L2224/14
摘要： A semiconductor light emitting device having an n-electrode and a p-electrode provided on the same surface side of a semiconductor film, wherein current spread in the semiconductor film is promoted, so that the improvements in luminous efficiency and reliability, the emission intensity uniformalization across the surface, and a reduction in the forward voltage, can be achieved. The semiconductor light emitting device includes a semiconductor film including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer; the n-electrode formed on an exposed surface of the n-type semiconductor layer exposed by removing parts of the p-type semiconductor layer, of the active layer, and of the n-type semiconductor layer with accessing from the surface side of the p-type semiconductor layer; and the p-electrode. A current guide portion having conductivity higher than that of the n-type semiconductor layer is provided on or in the n-type semiconductor layer over the p-type electrode.
摘要翻译：一种半导体发光器件，其具有设置在半导体膜的相同表面侧的n电极和p电极，其中促进了半导体膜中的电流扩散，使得发光效率和可靠性的提高，发光强度均匀化跨越表面，并且可以实现正向电压的降低。半导体发光器件包括：包含n型半导体层，有源层和p型半导体层的半导体膜; 形成在n型半导体层的暴露表面上的n电极，通过从p型半导体层，有源层和n型半导体层的表面侧进入而露出的n型半导体层型半导体层; 和p电极。具有比n型半导体层高的导电率的电流引导部分设置在p型电极上的n型半导体层上或其中。

2. 发明授权

US08338202B2 Method for manufacturing semiconductor device using separable support body 有权
标题翻译：使用可分离支撑体制造半导体器件的方法
公开(公告)号：US08338202B2
公开(公告)日：2012-12-25
申请号：US12407290
申请日：2009-03-19
申请人： Takako Chinone , Shinichi Tanaka , Sho Iwayama , Yusuke Yokobayashi , Satoshi Tanaka
发明人： Takako Chinone , Shinichi Tanaka , Sho Iwayama , Yusuke Yokobayashi , Satoshi Tanaka
IPC分类号： H01L21/00
CPC分类号： H01L21/2007 , H01L33/0079
摘要： In a method for manufacturing a semiconductor device, a first conductivity type semiconductor layer and a second conductivity type semiconductor layer are sequentially grown on a growth substrate. Then, an electrode layer is formed on the second conductivity type semiconductor layer. Then, a support body is adhered to the electrode layer by providing at least one adhesive layer therebetween. Finally, at least a part of the growth substrate is removed. In this case, the adhesive layer is removable from the electrode layer.
摘要翻译：在半导体器件的制造方法中，在生长衬底上依次生长第一导电型半导体层和第二导电型半导体层。然后，在第二导电型半导体层上形成电极层。然后，通过在它们之间提供至少一个粘合剂层将支撑体附着到电极层。最后，去除生长衬底的至少一部分。在这种情况下，粘合剂层可从电极层移除。

3. 发明授权

US08071408B2 Method of manufacturing semiconductor light emitting element, and semiconductor light emitting element 有权
标题翻译：制造半导体发光元件的方法和半导体发光元件
公开(公告)号：US08071408B2
公开(公告)日：2011-12-06
申请号：US12614536
申请日：2009-11-09
申请人： Satoshi Tanaka , Yusuke Yokobayashi
发明人： Satoshi Tanaka , Yusuke Yokobayashi
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/32
摘要： A method includes steps of: sequentially growing a first semiconductor layer of a first conductivity type, an active layer, and a second semiconductor layer of a second conductivity type on a growth substrate to form a layered structure; separating the substrate from the layered structure to expose the first layer; performing wet etching on an exposed surface to form defect depressions; forming an insulating layer on the exposed surface; polishing the insulating layer and the first layer to flatten the surface of the first layer; and performing wet etching on the surface of the first layer to form protrusions deriving from a crystal structure.
摘要翻译：一种方法包括以下步骤：在生长衬底上顺序生长第一导电类型的第一半导体层，有源层和第二导电类型的第二半导体层，以形成层状结构; 将所述衬底与所述分层结构分离以暴露所述第一层; 在暴露的表面上进行湿蚀刻以形成缺陷凹陷; 在暴露的表面上形成绝缘层; 抛光绝缘层和第一层以使第一层的表面变平; 并在第一层的表面上进行湿蚀刻以形成衍生自晶体结构的突起。

4. 发明申请

US20110156087A1 FACE-UP OPTICAL SEMICONDUCTOR DEVICE AND METHOD 有权
标题翻译：面向光学半导体器件和方法
公开(公告)号：US20110156087A1
公开(公告)日：2011-06-30
申请号：US12978542
申请日：2010-12-24
申请人： SATOSHI TANAKA , Yusuke Yokobayashi
发明人： SATOSHI TANAKA , Yusuke Yokobayashi
IPC分类号： H01L33/42
CPC分类号： H01L33/38 , H01L33/42 , H01L2933/0016
摘要： A face-up optical semiconductor device can be prepared by forming an n-type GaN layer, an active layer, and a p-type GaN layer on a C-plane sapphire substrate. Parts of the p-type GaN layer and the active layer can be removed, and a transparent electrode can be formed over all or most of the remaining p-type GaN layer. A p-side electrode including a pad portion and auxiliary electrode portions can be formed on the transparent electrode layer. An n-side electrode can be formed on the exposed n-type GaN layer. On regions of the transparent electrode layer where weak light emission regions may be formed, outside independent electrodes can be provided. They can be disposed on concentric circles with the n-side electrode as a center or tangent lines thereof so as to be along the circles or the tangent lines. The outside independent electrodes can diffuse current from the p-side electrode to the n-side electrode flowing through the transparent electrode layer into the short side end portions of the transparent electrode layer, thereby decreasing the weak light emission regions.
摘要翻译：可以通过在C面蓝宝石衬底上形成n型GaN层，有源层和p型GaN层来制备面朝上的光学半导体器件。可以去除p型GaN层和有源层的部分，并且可以在剩余的p型GaN层的全部或大部分上形成透明电极。可以在透明电极层上形成包括焊盘部分和辅助电极部分的p侧电极。可以在暴露的n型GaN层上形成n侧电极。在可以形成弱发光区域的透明电极层的区域上，可以设置独立的电极。它们可以以n侧电极为中心或切线配置在同心圆上，以便沿着圆或切线。外部独立电极可以将电流从p侧电极扩散到通过透明电极层的n侧电极进入透明电极层的短边端部，从而减少弱发光区域。

5. 发明申请

US20100117115A1 METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND SEMICONDUCTOR LIGHT EMITTING ELEMENT 有权
标题翻译：制造半导体发光元件的方法和半导体发光元件
公开(公告)号：US20100117115A1
公开(公告)日：2010-05-13
申请号：US12614536
申请日：2009-11-09
申请人： Satoshi TANAKA , Yusuke Yokobayashi
发明人： Satoshi TANAKA , Yusuke Yokobayashi
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/32
摘要： A method includes steps of: sequentially growing a first semiconductor layer of a first conductivity type, an active layer, and a second semiconductor layer of a second conductivity type on a growth substrate to form a layered structure; separating the substrate from the layered structure to expose the first layer; performing wet etching on an exposed surface to form defect depressions; forming an insulating layer on the exposed surface; polishing the insulating layer and the first layer to flatten the surface of the first layer; and performing wet etching on the surface of the first layer to form protrusions deriving from a crystal structure.
摘要翻译：一种方法包括以下步骤：在生长衬底上顺序生长第一导电类型的第一半导体层，有源层和第二导电类型的第二半导体层，以形成层状结构; 将所述衬底与所述分层结构分离以暴露所述第一层; 在暴露的表面上进行湿蚀刻以形成缺陷凹陷; 在暴露的表面上形成绝缘层; 抛光绝缘层和第一层以使第一层的表面变平; 并在第一层的表面上进行湿蚀刻以形成衍生自晶体结构的突起。

6. 发明申请

US20100006876A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE WITH SURFACE TEXTURE AND ITS MANUFACTURE 有权
标题翻译：具有表面纹理的氮化物半导体发光器件及其制造
公开(公告)号：US20100006876A1
公开(公告)日：2010-01-14
申请号：US12500155
申请日：2009-07-09
申请人： Masahiko Moteki , Satoshi Tanaka , Yusuke Yokobayashi
发明人： Masahiko Moteki , Satoshi Tanaka , Yusuke Yokobayashi
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/02 , H01L33/32
摘要： A nitride semiconductor light emitting device includes: a substrate for growing nitride semiconductor of a hexagonal crystal structure; a first nitride semiconductor layer of a first conductivity type formed above the substrate; an active layer formed on the first nitride semiconductor layer for emitting light when current flows; a second nitride semiconductor layer of a second conductivity type opposite to the first conductivity type formed on the active layer; texture formed above at least a partial area of the second nitride semiconductor layer and having a plurality of protrusions of a pyramid shape, each of the protrusions including a lower layer made of nitride semiconductor doped with impurities of the second conductivity type and an upper layer made of nitride semiconductor not intentionally doped with impurities; and a transparent electrode covering surfaces of the second nitride semiconductor layer and the texture.
摘要翻译：氮化物半导体发光器件包括：用于生长六方晶体结构的氮化物半导体的衬底; 形成在所述基板上方的第一导电类型的第一氮化物半导体层; 形成在所述第一氮化物半导体层上的用于在电流流动时发光的有源层; 与形成在有源层上的第一导电类型相反的第二导电类型的第二氮化物半导体层; 纹理形成在第二氮化物半导体层的至少部分区域上方，并且具有多个金字塔形状的突起，每个突起包括由掺杂有第二导电类型的杂质的氮化物半导体制成的下层和上层的氮化物半导体不是有意掺杂杂质的; 以及覆盖第二氮化物半导体层和纹理的表面的透明电极。

7. 发明授权

US08455912B2 Semiconductor light emitting device and manufacturing method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08455912B2
公开(公告)日：2013-06-04
申请号：US12878197
申请日：2010-09-09
申请人： Satoshi Tanaka , Yusuke Yokobayashi
发明人： Satoshi Tanaka , Yusuke Yokobayashi
IPC分类号： H01L33/36 , H01L33/00
CPC分类号： H01L33/38 , H01L33/20
摘要： A light-emitting device which includes a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; and a light emitting layer provided between the first and second semiconductor layers, the device comprises a first electrode formed on the first semiconductor layer; a second electrode formed on the second semiconductor layer; and a light-transmissive electrode covering the second semiconductor layer and the second electrode, wherein contact between the second electrode and the second semiconductor layer is non-ohmic, and the second electrode has a stacked structure including a lower layer and an upper layer whose contact resistance with the light-transmissive electrode is lower than that of the lower layer, part of the second electrode being exposed through an opening formed in the light-transmissive electrode.
摘要翻译：一种发光器件，包括第一导电类型的第一半导体层; 第二导电类型的第二半导体层; 以及设置在所述第一和第二半导体层之间的发光层，所述器件包括形成在所述第一半导体层上的第一电极; 形成在所述第二半导体层上的第二电极; 以及覆盖所述第二半导体层和所述第二电极的透光电极，其中所述第二电极和所述第二半导体层之间的接触是非欧姆的，并且所述第二电极具有堆叠结构，所述层叠结构包括下层和上层，与透光电极的电阻低于下层的电阻，第二电极的一部分通过形成在透光电极中的开口露出。

8. 发明授权

US08390020B2 Face-up optical semiconductor device and method 有权
标题翻译：面朝上的光学半导体器件及方法
公开(公告)号：US08390020B2
公开(公告)日：2013-03-05
申请号：US12978542
申请日：2010-12-24
申请人： Satoshi Tanaka , Yusuke Yokobayashi
发明人： Satoshi Tanaka , Yusuke Yokobayashi
IPC分类号： H01L33/38
CPC分类号： H01L33/38 , H01L33/42 , H01L2933/0016
摘要： A face-up optical semiconductor device can be prepared by forming an n-type GaN layer, an active layer, and a p-type GaN layer on a C-plane sapphire substrate. Parts of the p-type GaN layer and the active layer can be removed, and a transparent electrode can be formed over all or most of the remaining p-type GaN layer. A p-side electrode including a pad portion and auxiliary electrode portions can be formed on the transparent electrode layer. An n-side electrode can be formed on the exposed n-type GaN layer. On regions of the transparent electrode layer where weak light emission regions may be formed, outside independent electrodes can be provided. They can be disposed on concentric circles with the n-side electrode as a center or tangent lines thereof so as to be along the circles or the tangent lines. The outside independent electrodes can diffuse current from the p-side electrode to the n-side electrode flowing through the transparent electrode layer into the short side end portions of the transparent electrode layer, thereby decreasing the weak light emission regions.
摘要翻译：可以通过在C面蓝宝石衬底上形成n型GaN层，有源层和p型GaN层来制备面朝上的光学半导体器件。可以去除p型GaN层和有源层的部分，并且可以在剩余的p型GaN层的全部或大部分上形成透明电极。可以在透明电极层上形成包括焊盘部分和辅助电极部分的p侧电极。可以在暴露的n型GaN层上形成n侧电极。在可以形成弱发光区域的透明电极层的区域上，可以设置独立的电极。它们可以以n侧电极为中心或切线配置在同心圆上，以便沿着圆或切线。外部独立电极可以将电流从p侧电极扩散到通过透明电极层的n侧电极进入透明电极层的短边端部，从而减少弱发光区域。

9. 发明授权

US08349629B2 Semiconductor light-emitting element and method of manufacturing same 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US08349629B2
公开(公告)日：2013-01-08
申请号：US12552459
申请日：2009-09-02
申请人： Yusuke Yokobayashi , Satoshi Tanaka , Masahiko Moteki
发明人： Yusuke Yokobayashi , Satoshi Tanaka , Masahiko Moteki
IPC分类号： G01R31/26 , H01L21/66
CPC分类号： H01L33/16 , H01L33/22 , H01L33/32 , H01L33/42 , H01L33/44
摘要： A semiconductor light-emitting element includes a first semiconductor layer having a first conduction type, a second semiconductor layer having a second conduction type, an active layer provided between the first and second semiconductor layers, a polarity inversion layer provided on the second semiconductor layer, and a third semiconductor layer having the second conduction type provided on the polarity inversion layer. Crystal orientations of the first through third semiconductor layers are inverted, with the polarity inversion layer serving as a boundary. The first and third semiconductor layers have uppermost surfaces made from polar faces having common constitutional elements. Hexagonal conical protrusions arising from a crystal structure are formed at outermost surfaces of the first and third semiconductor layers. The first through third semiconductor layers are made from a wurtzite-structure group III nitride semiconductor, and are layered along a C-axis direction of the crystal structure.
摘要翻译：半导体发光元件包括具有第一导电类型的第一半导体层，具有第二导电类型的第二半导体层，设置在第一和第二半导体层之间的有源层，设置在第二半导体层上的极性反转层，以及设置在极性反转层上的具有第二导电类型的第三半导体层。第一至第三半导体层的晶体取向反转，极性反转层用作边界。第一和第三半导体层具有由具有共同构成元件的极面制成的最上表面。在第一和第三半导体层的最外表面处形成由晶体结构产生的六角锥形突起。第一至第三半导体层由纤锌矿结构III族氮化物半导体制成，并沿着晶体结构的C轴方向分层。

10. 发明授权

US07999249B2 Nitride semiconductor light emitting device with surface texture and its manufacture 有权
标题翻译：氮化物半导体发光器件具有表面纹理及其制造
公开(公告)号：US07999249B2
公开(公告)日：2011-08-16
申请号：US12500155
申请日：2009-07-09
申请人： Masahiko Moteki , Satoshi Tanaka , Yusuke Yokobayashi
发明人： Masahiko Moteki , Satoshi Tanaka , Yusuke Yokobayashi
IPC分类号： H01L29/06
CPC分类号： H01L33/20 , H01L33/02 , H01L33/32
摘要： A nitride semiconductor light emitting device includes: a substrate for growing nitride semiconductor of a hexagonal crystal structure; a first nitride semiconductor layer of a first conductivity type formed above the substrate; an active layer formed on the first nitride semiconductor layer for emitting light when current flows; a second nitride semiconductor layer of a second conductivity type opposite to the first conductivity type formed on the active layer; texture formed above at least a partial area of the second nitride semiconductor layer and having a plurality of protrusions of a pyramid shape, each of the protrusions including a lower layer made of nitride semiconductor doped with impurities of the second conductivity type and an upper layer made of nitride semiconductor not intentionally doped with impurities; and a transparent electrode covering surfaces of the second nitride semiconductor layer and the texture.
摘要翻译：氮化物半导体发光器件包括：用于生长六方晶体结构的氮化物半导体的衬底; 形成在所述基板上方的第一导电类型的第一氮化物半导体层; 形成在所述第一氮化物半导体层上的用于在电流流动时发光的有源层; 与形成在有源层上的第一导电类型相反的第二导电类型的第二氮化物半导体层; 纹理形成在第二氮化物半导体层的至少部分区域上方，并且具有多个金字塔形状的突起，每个突起包括由掺杂有第二导电类型的杂质的氮化物半导体制成的下层和上层的氮化物半导体不是有意掺杂杂质的; 以及覆盖第二氮化物半导体层和纹理的表面的透明电极。

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