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    • 3. 发明授权
    • Laser device for exposure apparatus
    • 用于曝光设备的激光装置
    • US09257809B2
    • 2016-02-09
    • US13401734
    • 2012-02-21
    • Hidenori WatanabeHiroshi TanakaOsamu Wakabayashi
    • Hidenori WatanabeHiroshi TanakaOsamu Wakabayashi
    • H01S3/223H01S3/03H01S3/134H01S3/23H01S3/036G03F7/20
    • H01S3/03G03F7/70025H01S3/036H01S3/134H01S3/2316H01S3/2366
    • A laser device for an exposure apparatus may include: a MOPA-type or MOPO-type laser device including a seed laser and at least one gas discharge-pumped amplifier stage that receives output light from the seed laser as an input, amplifies the light, and outputs the amplified light; and at least one of a laser gas control device that at least changes the total pressure of a laser gas in said amplifier stage in accordance with requested energy and a laser power source control device that at least changes pump intensity of discharge electrodes in said amplifier stage in accordance with said requested energy, in a case where the energy of laser output light from said laser device is to be changed discontinuously in response to a request from an exposure apparatus.
    • 用于曝光装置的激光装置可以包括:MOPA型或MOPO型激光装置,其包括种子激光器和至少一个气体放电泵浦放大器级,其接收来自种子激光器的输出光作为输入,放大光, 并输出放大的光; 以及激光气体控制装置中的至少一个,所述激光气体控制装置至少根据所要求的能量来改变所述放大器级中的激光气体的总压力,激光电源控制装置至少改变放大器级中的放电电极的泵浦强度 根据所述要求的能量,在来自所述激光装置的激光输出光的能量将根据来自曝光装置的请求而不连续地改变的情况下。
    • 8. 发明授权
    • Substrate processing apparatus and substrate processing method
    • 基板加工装置及基板处理方法
    • US09070549B2
    • 2015-06-30
    • US12680799
    • 2008-09-22
    • Hiroshi TanakaToshiyuki ShiokawaTakao Inada
    • Hiroshi TanakaToshiyuki ShiokawaTakao Inada
    • B08B5/02H01L21/02H01L21/67
    • H01L21/02052H01L21/67028
    • A drying gas is supplied into a drying chamber in a substantially horizontal direction, an obliquely downward direction descendent from the substantially horizontal direction, or a vertically downward direction under a state where a wafer is immersed in a cleaning liquid in a cleaning tank. The wafer is moved from the cleaning tank into the drying chamber, with the drying gas being supplied into the drying chamber. At this time, the supply of the drying gas into the drying chamber is stopped, under a condition where a part of the wafer is immersed in the cleaning liquid stored in the cleaning tank. After the movement of the wafer into the drying chamber has been finished, a drying gas is supplied into the drying chamber in an obliquely upward direction ascendant from the substantially horizontal direction or a vertically upward direction.
    • 在将晶片浸入清洗槽中的清洗液体的状态下,将干燥气体从大致水平方向或垂直向下方向向大致水平方向,倾斜向下方向供给到干燥室。 将晶片从清洁槽移动到干燥室中,其中干燥气体被供应到干燥室中。 此时,在将晶片的一部分浸渍在存储在清洗槽中的清洗液中的状态下,将干燥气体供给到干燥室内停止。 在将晶片移动到干燥室中之后,干燥气体从大致水平方向或垂直向上方向上升的斜上方向供给干燥室。