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41. 发明申请

US20090072163A1 TECHNIQUES FOR CONTROLLING A CHARGED PARTICLE BEAM 有权
标题翻译：用于控制充电颗粒光束的技术
公开(公告)号：US20090072163A1
公开(公告)日：2009-03-19
申请号：US11854852
申请日：2007-09-13
申请人： Piotr R. Lubicki , Russell J. Low , Joseph C. Olson , Anthony Renau
发明人： Piotr R. Lubicki , Russell J. Low , Joseph C. Olson , Anthony Renau
IPC分类号： G21K5/04
CPC分类号： H01J37/04 , H01J37/3171 , H01J2237/04735 , H01J2237/04756 , H05H15/00
摘要： Techniques for controlling a charged particle beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as a charged particle acceleration/deceleration system. The charged particle acceleration/deceleration system may comprise an acceleration column. The acceleration column may comprise a plurality of electrodes having apertures through which a charged particle beam may pass. The charged particle acceleration/deceleration system may also comprise a plurality of resistors electrically coupled to the plurality of electrodes. The charged particle acceleration/deceleration system may further comprise a plurality of switches electrically coupled to the plurality of electrodes and the plurality of resistors, each of the plurality of switches may be configured to be selectively switched respectively in a plurality of operation modes.
摘要翻译：公开了用于控制带电粒子束的技术。在一个特定的示例性实施例中，这些技术可以被实现为带电粒子加速/减速系统。带电粒子加速/减速系统可以包括加速度列。加速柱可以包括具有孔的多个电极，带电粒子束可以通过该孔。带电粒子加速/减速系统还可包括电耦合到多个电极的多个电阻器。带电粒子加速/减速系统还可以包括电耦合到多个电极和多个电阻器的多个开关，多个开关中的每一个可被配置为分别以多种操作模式选择性地切换。

42. 发明授权

US07402820B2 Ion beam contamination determination 有权
标题翻译：离子束污染测定
公开(公告)号：US07402820B2
公开(公告)日：2008-07-22
申请号：US11289885
申请日：2005-11-30
申请人： Russell Low , Joseph C. Olson , Antonella Cucchetti , Anthony Renau , Marie Welsch
发明人： Russell Low , Joseph C. Olson , Antonella Cucchetti , Anthony Renau , Marie Welsch
IPC分类号： H01L21/425 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/304 , H01J2237/31705 , H01L22/12
摘要： A system, method and program product for determining contamination of an ion beam are disclosed. In the event of an isobaric interference, or near isobaric interference between a contaminant ion and an expected ion of an ion beam, which is difficult to detect, it is possible to measure a third ion in the ion beam and estimate, based on the amount of the third ion measured, a relative amount of the contaminant ion compared to the expected ion. The estimated relative amount of the contaminant ion is used together with a measured mass resolution of the ion implantation system to determine whether an ion implantation process needs to be suspended.
摘要翻译：公开了一种用于确定离子束污染的系统，方法和程序产品。在难以检测的等离子体干扰或离子束的预期离子之间的等压干扰或接近等压干扰的情况下，可以测量离子束中的第三离子并基于量测量的第三离子，与预期离子相比的污染物离子的相对量。污染物离子的估计相对量与离子注入系统的测量质量分辨率一起使用以确定离子注入过程是否需要暂停。

43. 发明授权

US07391038B2 Technique for isocentric ion beam scanning 有权
标题翻译：等中心离子束扫描技术
公开(公告)号：US07391038B2
公开(公告)日：2008-06-24
申请号：US11385634
申请日：2006-03-21
申请人： Joseph C. Olson , Anthony Renau
发明人： Joseph C. Olson , Anthony Renau
IPC分类号： H01J37/317 , H01J37/08 , A61N5/00
CPC分类号： H01J37/3171 , H01J37/3023 , H01J2237/0458 , H01J2237/20228 , H01J2237/30483
摘要： A technique for isocentric ion beam scanning is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for isocentric ion beam scanning. The apparatus may comprise an end station having a mechanism for holding and translating a wafer. The apparatus may also comprise a deflector that tilts an ion beam to a predetermined angle and directs the ion beam into the end station. The wafer may be translated with respect to the ion beam for isocentric scanning at least a portion of a surface of the wafer, and wherein the ion beam is maintained at the predetermined angle during isocentric scanning.
摘要翻译：公开了一种等中心离子束扫描技术。在一个特定的示例性实施例中，该技术可以由用于等中心离子束扫描的装置来实现。该装置可以包括具有用于保持和平移晶片的机构的终端站。该装置还可以包括将离子束倾斜到预定角度并将离子束引导到终端站的偏转器。晶片可以相对于离子束平移，用于等中心扫描晶片的表面的至少一部分，并且其中离子束在等中心扫描期间保持在预定角度。

44. 发明授权

US07339179B2 Technique for providing a segmented electrostatic lens in an ion implanter 有权
标题翻译：在离子注入机中提供分段静电透镜的技术
公开(公告)号：US07339179B2
公开(公告)日：2008-03-04
申请号：US11413570
申请日：2006-04-28
申请人： Svetlana B. Radovanov , Anthony Renau , James Steve Buff
发明人： Svetlana B. Radovanov , Anthony Renau , James Steve Buff
IPC分类号： H01J37/10
CPC分类号： H01J37/12 , H01J37/3171
摘要： A technique for providing a segmented electrostatic lens in an ion implanter is disclosed. In one particular exemplary embodiment, the technique may be realized as an electrostatic lens for use in an ion implanter. The lens may comprise an entrance electrode biased at a first voltage potential, wherein an ion beam enters the electrostatic lens through the entrance electrode. The lens may also comprise an exit electrode biased at a second voltage potential, wherein the ion beam exits the electrostatic lens through the exit electrode. The lens may further comprise a suppression electrode located between the entrance electrode and the exit electrode, the suppression electrode comprising a plurality of segments that are independently biased to manipulate an energy and a shape of the ion beam.
摘要翻译：公开了一种在离子注入机中提供分段静电透镜的技术。在一个特定的示例性实施例中，该技术可以被实现为用于离子注入机的静电透镜。透镜可以包括偏置在第一电压电位的入口电极，其中离子束通过入口电极进入静电透镜。透镜还可以包括偏压在第二电压电位的出射电极，其中离子束通过出射电极离开静电透镜。透镜还可以包括位于入射电极和出射电极之间的抑制电极，所述抑制电极包括多个段，所述多个段被独立地偏置以操纵离子束的能量和形状。

45. 发明申请

US20070178678A1 Methods of implanting ions and ion sources used for same 审中-公开
标题翻译：植入离子和离子源的方法
公开(公告)号：US20070178678A1
公开(公告)日：2007-08-02
申请号：US11342183
申请日：2006-01-28
申请人： Christopher Hatem , Jonathan England , Larry Sneddon , Russell Low , Anthony Renau , Alexander Perel , Kourosh Saadatmand
发明人： Christopher Hatem , Jonathan England , Larry Sneddon , Russell Low , Anthony Renau , Alexander Perel , Kourosh Saadatmand
IPC分类号： H01L21/26
CPC分类号： H01J37/08 , C23C14/48 , H01J27/02 , H01J37/3171
摘要： Methods of ion implantation and ion sources used for the same are provided. The methods involve generating ions from a source feed gas that comprises multiple elements. For example, the source feed gas may comprise boron and at least two other elements (e.g., XaBbYc). The use of such source feed gases can lead to a number of advantages over certain conventional processes including enabling use of higher implant energies and beam currents when forming implanted regions having ultra-shallow junction depths. Also, in certain embodiments, the composition of the source feed gas may be selected to be thermally stable at relatively high temperatures (e.g., greater than 350° C.) which allows use of such gases in many conventional ion sources (e.g., indirectly heated cathode (IHC), Bernas) which generate such temperatures during use.
摘要翻译：提供了用于其的离子注入和离子源的方法。该方法涉及从包含多个元素的源馈送气体产生离子。例如，源原料气体可以包含硼和至少两个其它元素（例如，X a，B B，B和C）。使用这种源进料气体可以产生比某些常规方法多的优点，包括当形成具有超浅结深度的注入区域时能够使用更高的注入能量和束流。此外，在某些实施方案中，源进料气体的组成可以选择为在相对较高的温度（例如，大于350℃）下是热稳定的，其允许在许多常规离子源中使用这种气体（例如，间接加热阴极（IHC），伯纳斯）在使用过程中产生这种温度。

46. 发明授权

US07250617B2 Ion beam neutral detection 有权
标题翻译：离子束中性检测
公开(公告)号：US07250617B2
公开(公告)日：2007-07-31
申请号：US11056445
申请日：2005-02-11
申请人： Anthony Renau , Joseph C. Olson , Eric Hermanson , Gordon C. Angel
发明人： Anthony Renau , Joseph C. Olson , Eric Hermanson , Gordon C. Angel
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J2237/24405 , H01J2237/304
摘要： An ion beam neutral detector system, an ion implanter system including the detector system and a method of detecting ion beam neutrals that ensures an ion implant is meeting contamination requirements are disclosed. The detector includes an energy contamination monitor positioned with in an ion implanter system. A method of the invention includes implanting the workpiece using an ion beam, and periodically detecting ion beam neutrals in the ion beam such that adjustments to the ion implanter system can be made for optimization.
摘要翻译：公开了一种离子束中性检测器系统，包括检测器系统的离子注入机系统和检测离子束中性物质的方法，其确保离子注入满足污染要求。检测器包括一个位于离子注入机系统中的能量污染监测器。本发明的方法包括使用离子束注入工件，并周期性地检测离子束中的离子束中性粒子，使得可以对离子注入机系统进行优化调整。

47. 发明申请

US20060258128A1 Methods and apparatus for enabling multiple process steps on a single substrate 审中-公开
标题翻译：用于在单个基板上实现多个工艺步骤的方法和装置
公开(公告)号：US20060258128A1
公开(公告)日：2006-11-16
申请号：US11329761
申请日：2006-01-11
申请人： Peter Nunan , Anthony Renau , Alan Sheng , Paul Murphy , Kyu-Ha Shim , Charles Teodorczyk , Steven Anella , Samuel Barsky , Lawrence Ficarra , Richard Hertel
发明人： Peter Nunan , Anthony Renau , Alan Sheng , Paul Murphy , Kyu-Ha Shim , Charles Teodorczyk , Steven Anella , Samuel Barsky , Lawrence Ficarra , Richard Hertel
IPC分类号： H01L21/677 , H01L21/04
CPC分类号： H01L21/67745 , H01J37/09 , H01J2237/31701 , H01J2237/3171 , H01J2237/31711 , H01L21/67213 , H01L21/68707
摘要： Substrate masking apparatus includes a platen assembly to support a substrate for processing, a mask having an aperture, a retaining mechanism to retain the mask in a masking position, and a positioning mechanism to change the relative positions of the mask and the substrate so that different areas of the substrate are exposed through the aperture in the mask. The apparatus may further include a mask loading mechanism to transfer the mask to and between the masking position and a non-masking position. The processing may include ion implantation of the substrate with different implant parameter values in different areas. In other embodiments, an area of the substrate to be processed is selectable by a mask, a shutter or a beam modifier in front of the substrate.
摘要翻译：基板掩蔽装置包括支撑用于处理的基板的压板组件，具有孔的掩模，将掩模保持在遮蔽位置的保持机构以及改变掩模和基板的相对位置的定位机构，使得不同衬底的区域通过掩模中的孔露出。该装置还可以包括掩模加载机构，用于将掩模传送到掩蔽位置和非掩蔽位置之间。该处理可以包括在不同区域中具有不同植入参数值的衬底的离子注入。在其他实施例中，待处理的基板的区域可以通过基板前面的掩模，快门或光束修正器来选择。

48. 发明申请

US20050263721A1 Uniformity control using multiple tilt axes, rotating wafer and variable scan velocity 有权
标题翻译：使用多个倾斜轴，旋转晶片和可变扫描速度的均匀性控制
公开(公告)号：US20050263721A1
公开(公告)日：2005-12-01
申请号：US11021420
申请日：2004-12-23
申请人： Anthony Renau , Joseph Olson , Donna Smatlak , Jun Lu
发明人： Anthony Renau , Joseph Olson , Donna Smatlak , Jun Lu
IPC分类号： G21K5/10 , H01J37/08
CPC分类号： H01J37/3023 , H01J37/304 , H01J37/3171 , H01J2237/20214 , H01J2237/31703 , H01L21/265
摘要： A system, method and program product for enhancing dose uniformity during ion implantation are disclosed. The present invention is directed to allowing the use of an at least partially untuned ion beam to obtain a uniform implant by scanning the beam in multiple rotationally-fixed orientations (scan directions) of the target at variable or non-uniform scan velocities. The non-uniform scan velocities are dictated by a scan velocity profile that is generated based on the ion beam profile and/or the scan direction. The beam can be of any size, shape or tuning. A platen holding a wafer is rotated to a new desired rotationally-fixed orientation after a scan, and a subsequent scan occurs at the same scan velocity profile or a different scan velocity profile. Also included is a method, system and program product for conducting a uniform dose ion implantation in which the target is rotated and tilted about greater than one axes relative to the ion beam.
摘要翻译：公开了一种用于在离子注入期间增强剂量均匀性的系统，方法和程序产品。本发明旨在允许使用至少部分未经调制的离子束以可变或不均匀的扫描速度扫描靶的多个旋转固定取向（扫描方向）来获得均匀的注入。不均匀的扫描速度由基于离子束分布和/或扫描方向产生的扫描速度分布决定。光束可以是任何尺寸，形状或调谐。在扫描之后，保持晶片的压板旋转到新的期望的旋转固定取向，并且随后的扫描以相同的扫描速度分布或不同的扫描速度分布发生。还包括用于进行均匀剂量离子注入的方法，系统和程序产品，其中靶相对于离子束旋转并且倾斜大于大于一个轴。

49. 发明申请

US20050258379A1 Uniformity control using multiple fixed wafer orientations and variable scan velocity 有权
标题翻译：使用多个固定晶片取向和可变扫描速度的均匀性控制
公开(公告)号：US20050258379A1
公开(公告)日：2005-11-24
申请号：US11008764
申请日：2004-12-08
申请人： Anthony Renau , Joseph Olson , Donna Smatlak , Jun Lu
发明人： Anthony Renau , Joseph Olson , Donna Smatlak , Jun Lu
IPC分类号： G21K5/10 , H01J37/08
CPC分类号： H01J37/3023 , H01J37/304 , H01J37/3171 , H01J2237/20214 , H01J2237/31703 , H01L21/265
摘要： A system, method and program product for enhancing dose uniformity during ion implantation are disclosed. The present invention is directed to allowing the use of an at least partially un-tuned ion beam to obtain a uniform implant by scanning the beam in multiple rotationally-fixed orientations (scan directions) of the target at variable or non-uniform scan velocities. The non-uniform scan velocities are dictated by a scan velocity profile that is generated based on the ion beam profile and/or the scan direction. The beam can be of any size, shape or tuning. A platen holding a wafer is rotated to a new desired rotationally-fixed orientation after a scan, and a subsequent scan occurs at the same scan velocity profile or a different scan velocity profile. This technique may be used independently or in conjunction with other uniformity approaches to achieve the required level of uniformity.
摘要翻译：公开了一种用于在离子注入期间增强剂量均匀性的系统，方法和程序产品。本发明旨在允许使用至少部分未调谐的离子束通过以可变或不均匀的扫描速度以目标的多个旋转固定取向（扫描方向）扫描光束来获得均匀的注入。不均匀的扫描速度由基于离子束分布和/或扫描方向产生的扫描速度分布决定。光束可以是任何尺寸，形状或调谐。在扫描之后，保持晶片的压板旋转到新的期望的旋转固定取向，并且随后的扫描以相同的扫描速度分布或不同的扫描速度分布发生。该技术可以独立地使用或与其他均匀性方法结合使用以实现所需的均匀性水平。

50. 发明申请

US20120256097A1 INDIRECTLY HEATED CATHODE CARTRIDGE DESIGN 有权
标题翻译：独立加热阴极盒设计
公开(公告)号：US20120256097A1
公开(公告)日：2012-10-11
申请号：US13082495
申请日：2011-04-08
申请人： Craig R. Chaney , Leo V. Klos , Anthony Renau , Alexander Perel
发明人： Craig R. Chaney , Leo V. Klos , Anthony Renau , Alexander Perel
IPC分类号： H01J1/50 , H01J9/02
CPC分类号： H01J37/067 , H01J19/14 , H01J19/20 , H01J29/485 , H01J37/026 , H01J37/075 , H01J37/3171 , H01J2237/06308 , H01J2237/06375
摘要： An apparatus and method for producing electrons in a plasma flood gun is disclosed. The apparatus includes an indirectly heated cathode (IHC) which is contained within a pre-fabricated cartridge. This cartridge can be readily replaced in a plasma flood gun. In addition, the use of an IHC reduces the amount of contaminants that are injected into the workpiece or wafer.
摘要翻译：公开了一种用于在等离子体喷枪中产生电子的装置和方法。该装置包括一个间接加热的阴极（IHC），其被包含在一个预制的盒中。这种墨盒可以在等离子喷枪中轻松更换。此外，IHC的使用减少了注入工件或晶片的污染物的量。

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