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1. 发明授权

US07820986B2 Techniques for controlling a charged particle beam 有权
标题翻译：用于控制带电粒子束的技术
公开(公告)号：US07820986B2
公开(公告)日：2010-10-26
申请号：US11854852
申请日：2007-09-13
申请人： Piotr R. Lubicki , Russell J. Low , Joseph C. Olson , Anthony Renau
发明人： Piotr R. Lubicki , Russell J. Low , Joseph C. Olson , Anthony Renau
IPC分类号： H01J37/317 , H05H5/06
CPC分类号： H01J37/04 , H01J37/3171 , H01J2237/04735 , H01J2237/04756 , H05H15/00
摘要： Techniques for controlling a charged particle beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as a charged particle acceleration/deceleration system. The charged particle acceleration/deceleration system may comprise an acceleration column. The acceleration column may comprise a plurality of electrodes having apertures through which a charged particle beam may pass. The charged particle acceleration/deceleration system may also comprise a plurality of resistors electrically coupled to the plurality of electrodes. The charged particle acceleration/deceleration system may further comprise a plurality of switches electrically coupled to the plurality of electrodes and the plurality of resistors, each of the plurality of switches may be configured to be selectively switched respectively in a plurality of operation modes.
摘要翻译：公开了用于控制带电粒子束的技术。在一个特定的示例性实施例中，这些技术可以被实现为带电粒子加速/减速系统。带电粒子加速/减速系统可以包括加速度列。加速柱可以包括具有孔的多个电极，带电粒子束可以通过该孔。带电粒子加速/减速系统还可以包括电耦合到多个电极的多个电阻器。带电粒子加速/减速系统还可以包括电耦合到多个电极和多个电阻器的多个开关，多个开关中的每一个可被配置为分别以多种操作模式选择性地切换。

2. 发明申请

US20090072163A1 TECHNIQUES FOR CONTROLLING A CHARGED PARTICLE BEAM 有权
标题翻译：用于控制充电颗粒光束的技术
公开(公告)号：US20090072163A1
公开(公告)日：2009-03-19
申请号：US11854852
申请日：2007-09-13
申请人： Piotr R. Lubicki , Russell J. Low , Joseph C. Olson , Anthony Renau
发明人： Piotr R. Lubicki , Russell J. Low , Joseph C. Olson , Anthony Renau
IPC分类号： G21K5/04
CPC分类号： H01J37/04 , H01J37/3171 , H01J2237/04735 , H01J2237/04756 , H05H15/00
摘要： Techniques for controlling a charged particle beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as a charged particle acceleration/deceleration system. The charged particle acceleration/deceleration system may comprise an acceleration column. The acceleration column may comprise a plurality of electrodes having apertures through which a charged particle beam may pass. The charged particle acceleration/deceleration system may also comprise a plurality of resistors electrically coupled to the plurality of electrodes. The charged particle acceleration/deceleration system may further comprise a plurality of switches electrically coupled to the plurality of electrodes and the plurality of resistors, each of the plurality of switches may be configured to be selectively switched respectively in a plurality of operation modes.
摘要翻译：公开了用于控制带电粒子束的技术。在一个特定的示例性实施例中，这些技术可以被实现为带电粒子加速/减速系统。带电粒子加速/减速系统可以包括加速度列。加速柱可以包括具有孔的多个电极，带电粒子束可以通过该孔。带电粒子加速/减速系统还可包括电耦合到多个电极的多个电阻器。带电粒子加速/减速系统还可以包括电耦合到多个电极和多个电阻器的多个开关，多个开关中的每一个可被配置为分别以多种操作模式选择性地切换。

3. 发明授权

US08455760B2 Interfacing two insulation parts in high voltage environment 有权
标题翻译：在高压环境下接合两个绝缘部件
公开(公告)号：US08455760B2
公开(公告)日：2013-06-04
申请号：US12983706
申请日：2011-01-03
申请人： Russell J. Low , Kasegn Tekletsadik , Anthony Renau , Piotr R. Lubicki , D. Jeffrey Lischer , Steve Krause , Eric Hermanson , Doug E. May
发明人： Russell J. Low , Kasegn Tekletsadik , Anthony Renau , Piotr R. Lubicki , D. Jeffrey Lischer , Steve Krause , Eric Hermanson , Doug E. May
IPC分类号： H01R4/02
CPC分类号： H05H7/00 , H01B17/66 , H01J37/241 , H01J37/3171 , H01J2237/038
摘要： Methods of interfacing parts in a high voltage environment and related structures are disclosed. A method comprises: providing a first part and a second part; and interfacing the first part and the second part to create a first substantially zero electrical field area at a first outer extent of an interface between the first and second parts and a reduced electrical field area in a different portion of the interface.
摘要翻译：公开了在高电压环境中部分接口的相关结构的方法。一种方法包括：提供第一部分和第二部分; 以及接合所述第一部分和所述第二部分以在所述第一部分和所述第二部分之间的界面的第一外部范围处形成第一基本为零的电场区域，以及在所述界面的不同部分中的减小的电场区域。

4. 发明申请

US20110094798A1 INTERFACING TWO INSULATION PARTS IN HIGH VOLTAGE ENVIRONMENT 有权
标题翻译：在高压环境中连接两个绝缘部件
公开(公告)号：US20110094798A1
公开(公告)日：2011-04-28
申请号：US12983706
申请日：2011-01-03
申请人： Russell J. Low , Kasegn D. Tekletsadik , Anthony Renau , Piotr R. Lubicki , D. Jeffrey Lischer , Steve Krause , Eric Hermanson , Doug E. May
发明人： Russell J. Low , Kasegn D. Tekletsadik , Anthony Renau , Piotr R. Lubicki , D. Jeffrey Lischer , Steve Krause , Eric Hermanson , Doug E. May
IPC分类号： H01R4/00
CPC分类号： H05H7/00 , H01B17/66 , H01J37/241 , H01J37/3171 , H01J2237/038
摘要： Methods of interfacing parts in a high voltage environment and related structures are disclosed. A method comprises: providing a first part and a second part; and interfacing the first part and the second part to create a first substantially zero electrical field area at a first outer extent of an interface between the first and second parts and a reduced electrical field area in a different portion of the interface.
摘要翻译：公开了在高电压环境中部分接口的相关结构的方法。一种方法包括：提供第一部分和第二部分; 以及接合所述第一部分和所述第二部分以在所述第一部分和所述第二部分之间的界面的第一外部范围处形成第一基本为零的电场区域，以及在所述界面的不同部分中的减小的电场区域。

5. 发明授权

US07863520B2 Interfacing two insulation parts in high voltage environment 失效
标题翻译：在高压环境下接合两个绝缘部件
公开(公告)号：US07863520B2
公开(公告)日：2011-01-04
申请号：US11838360
申请日：2007-08-14
申请人： Russell J. Low , Kasegn D. Tekletsadik , Anthony Renau , Piotr R. Lubicki , D. Jeffrey Lischer , Steve Krause , Eric Hermanson , Doug E. May
发明人： Russell J. Low , Kasegn D. Tekletsadik , Anthony Renau , Piotr R. Lubicki , D. Jeffrey Lischer , Steve Krause , Eric Hermanson , Doug E. May
IPC分类号： H01R4/02
CPC分类号： H05H7/00 , H01B17/66 , H01J37/241 , H01J37/3171 , H01J2237/038
摘要： Methods of interfacing parts in a high voltage environment and related structures are disclosed. A method comprises: providing an insulation medium between a first part and a second part in a high voltage environment; and interfacing the first part and the second part by compressing the first part and the second part against the insulation medium.
摘要翻译：公开了在高压环境中部分接口的相关结构的方法。一种方法包括：在高压环境中在第一部分和第二部分之间提供绝缘介质; 并且通过将第一部分和第二部分压靠绝缘介质来将第一部分和第二部分接合。

6. 发明申请

US20090047801A1 INTERFACING TWO INSULATION PARTS IN HIGH VOLTAGE ENVIRONMENT 失效
标题翻译：在高压环境中连接两个绝缘部件
公开(公告)号：US20090047801A1
公开(公告)日：2009-02-19
申请号：US11838360
申请日：2007-08-14
申请人： Russell J. Low , Kasegn D. Tekletsadik , Anthony Renau , Piotr R. Lubicki , D. Jeffrey Lischer , Steve Krause , Eric Hermanson , Doug E. May
发明人： Russell J. Low , Kasegn D. Tekletsadik , Anthony Renau , Piotr R. Lubicki , D. Jeffrey Lischer , Steve Krause , Eric Hermanson , Doug E. May
IPC分类号： H01R29/00
CPC分类号： H05H7/00 , H01B17/66 , H01J37/241 , H01J37/3171 , H01J2237/038
摘要： Methods of interfacing parts in a high voltage environment and related structures are disclosed. A method comprises: providing an insulation medium between a first part and a second part in a high voltage environment; and interfacing the first part and the second part by compressing the first part and the second part against the insulation medium.
摘要翻译：公开了在高电压环境中部分接口的相关结构的方法。一种方法包括：在高压环境中在第一部分和第二部分之间提供绝缘介质; 并且通过将第一部分和第二部分压靠绝缘介质来将第一部分和第二部分接合。

7. 发明授权

US08461030B2 Apparatus and method for controllably implanting workpieces 有权
公开(公告)号：US08461030B2
公开(公告)日：2013-06-11
申请号：US12947078
申请日：2010-11-16
申请人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson , Vikram Singh , James Buonodono , Deepak A. Ramappa , Russell J. Low , Atul Gupta , Kevin M. Daniels
发明人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson , Vikram Singh , James Buonodono , Deepak A. Ramappa , Russell J. Low , Atul Gupta , Kevin M. Daniels
IPC分类号： H01L21/26 , H01L21/42
CPC分类号： B01J19/081 , H01J37/3171 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J2237/0453 , H01J2237/1205 , H01L21/2236 , H01L31/022425 , H01L31/068 , H01L31/08 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation.

8. 发明授权

US07459704B2 Ion source configuration for production of ionized clusters, ionized molecules and ionized mono-atoms 有权
标题翻译：用于生产离子簇，离子化分子和离子化单原子的离子源配置
公开(公告)号：US07459704B2
公开(公告)日：2008-12-02
申请号：US11269033
申请日：2005-11-08
申请人： Joseph C. Olson , Anthony Renau , Donna L. Smatlak , Kurt Deckerlucke , Paul Murphy , Alexander S. Perel , Russell J. Low , Peter Kurunczi
发明人： Joseph C. Olson , Anthony Renau , Donna L. Smatlak , Kurt Deckerlucke , Paul Murphy , Alexander S. Perel , Russell J. Low , Peter Kurunczi
IPC分类号： G21K5/10 , H01J37/08
CPC分类号： H01J37/08 , H01J27/08 , H01J2237/0812 , H01J2237/082 , H01J2237/0825 , H01J2237/0827 , H01J2237/31701
摘要： Ion sources and methods for generating molecular ions in a cold operating mode and for generating atomic ions in a hot operating mode are provided. In some embodiments, first and second electron sources are located at opposite ends of an arc chamber. The first electron source is energized in the cold operating mode, and the second electron source is energized in the hot operating mode. In other embodiments, electrons are directed through a hole in a cathode in the cold operating mode and are directed at the cathode in the hot operating mode. In further embodiments, an ion beam generator includes a molecular ion source, an atomic ion source and a switching element to select the output of one of the ion sources.
摘要翻译：提供了用于在冷操作模式中产生分子离子并用于在热操作模式中产生原子离子的离子源和方法。在一些实施例中，第一和第二电子源位于电弧室的相对端。第一电子源在冷操作模式下通电，并且第二电子源在热操作模式下通电。在其他实施例中，电子以冷操作模式被引导通过阴极中的孔，并且在热操作模式中被引导到阴极。在另外的实施例中，离子束发生器包括分子离子源，原子离子源和用于选择一个离子源的输出的开关元件。

9. 发明授权

US08716682B2 Apparatus and method for multiple slot ion implantation 有权
标题翻译：多槽离子注入的装置和方法
公开(公告)号：US08716682B2
公开(公告)日：2014-05-06
申请号：US13079369
申请日：2011-04-04
申请人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson
发明人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson
IPC分类号： H05H1/24
CPC分类号： H01J37/3023 , H01J27/024 , H01J37/08 , H01J37/3172 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J37/32752 , H01J2237/31711
摘要： An ion implantation system may comprise a plasma source for providing a plasma and a workpiece holder arranged to receive a bias with respect to the plasma to attract ions across a plasma sheath toward the substrate. The system may also include an extraction plate arrangement comprising a multiplicity of different apertures each arranged to provide an ion beam having ions distributed over a range of angles of incidence on the workpiece, wherein a first ion beam extracted from a first aperture has a first beam profile that differs from a second ion beam extracted from a second aperture.
摘要翻译：离子注入系统可以包括用于提供等离子体的等离子体源和被布置成接收相对于等离子体的偏置的工件夹持器，以将等离子体护套上的离子吸引到衬底。该系统还可以包括提取板装置，其包括多个不同的孔，每个孔被布置成提供具有分布在工件上的入射角范围上的离子的离子束，其中从第一孔提取的第一离子束具有第一束轮廓与从第二孔提取的第二离子束不同。

10. 发明申请

US20120248328A1 APPARATUS AND METHOD FOR MULTIPLE SLOT ION IMPLANTATION 有权
标题翻译：多种植入物的装置和方法
公开(公告)号：US20120248328A1
公开(公告)日：2012-10-04
申请号：US13079369
申请日：2011-04-04
申请人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson
发明人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson
IPC分类号： H01J3/14 , G21G5/00
CPC分类号： H01J37/3023 , H01J27/024 , H01J37/08 , H01J37/3172 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J37/32752 , H01J2237/31711
摘要： An ion implantation system may comprise a plasma source for providing a plasma and a workpiece holder arranged to receive a bias with respect to the plasma to attract ions across a plasma sheath toward the substrate. The system may also include an extraction plate arrangement comprising a multiplicity of different apertures each arranged to provide an ion beam having ions distributed over a range of angles of incidence on the workpiece, wherein a first ion beam extracted from a first aperture has a first beam profile that differs from a second ion beam extracted from a second aperture.
摘要翻译：离子注入系统可以包括用于提供等离子体的等离子体源和被布置成接收相对于等离子体的偏置的工件夹持器，以将等离子体护套上的离子吸引到衬底。该系统还可以包括提取板装置，其包括多个不同的孔，每个孔被布置成提供具有分布在工件上的入射角范围上的离子的离子束，其中从第一孔提取的第一离子束具有第一束轮廓与从第二孔提取的第二离子束不同。

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