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    • 7. 发明申请
    • Thermal Control of a Proximity Mask and Wafer During Ion Implantation
    • 离子注入过程中接近面罩和晶圆的热控制
    • US20110320030A1
    • 2011-12-29
    • US12823531
    • 2010-06-25
    • Benjamin RiordonSteven Anella
    • Benjamin RiordonSteven Anella
    • G05D23/00G05D16/00G05D7/00
    • H01J37/3171H01J2237/002H01J2237/2001H01J2237/31711
    • An improved method of processing substrates, such as to create solar cells, is disclosed. The use of shadow masks may cause alignment errors associated with the differing thermal expansion characteristics of the shadow mask and the substrate. To counteract this error, mechanisms are used to insure that the thermal expansion of the shadow mask and the substrate are equal or substantially equal. In some embodiments, the shadow mask is produced with a type and quantity of material so that its thermal expansion matches that of the substrate. In other embodiments, heating and cooling mechanisms are applied to the shadow mask so that its thermal expansion matches that of the substrate. In other embodiments, heating and cooling mechanisms are applied to the substrate so that its thermal expansion matches that of the shadow mask. Furthermore, both the mask and substrate can be heated and/or cooled simultaneously.
    • 公开了一种改进的处理衬底的方法,例如制造太阳能电池。 阴影掩模的使用可能导致与荫罩和基板的不同热膨胀特性相关联的对准误差。 为了抵消该误差,使用机构来确保荫罩和衬底的热膨胀相等或基本相等。 在一些实施例中,荫罩产生类型和数量的材料,使得其热膨胀与基底的热膨胀相匹配。 在其他实施例中,将加热和冷却机构施加到荫罩,使得其热膨胀与基板的热膨胀相匹配。 在其他实施例中,将加热和冷却机构施加到基板上,使得其热膨胀与荫罩的热膨胀相匹配。 此外,掩模和基底可以同时被加热和/或冷却。