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1. 发明授权

US07250617B2 Ion beam neutral detection 有权
标题翻译：离子束中性检测
公开(公告)号：US07250617B2
公开(公告)日：2007-07-31
申请号：US11056445
申请日：2005-02-11
申请人： Anthony Renau , Joseph C. Olson , Eric Hermanson , Gordon C. Angel
发明人： Anthony Renau , Joseph C. Olson , Eric Hermanson , Gordon C. Angel
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J2237/24405 , H01J2237/304
摘要： An ion beam neutral detector system, an ion implanter system including the detector system and a method of detecting ion beam neutrals that ensures an ion implant is meeting contamination requirements are disclosed. The detector includes an energy contamination monitor positioned with in an ion implanter system. A method of the invention includes implanting the workpiece using an ion beam, and periodically detecting ion beam neutrals in the ion beam such that adjustments to the ion implanter system can be made for optimization.
摘要翻译：公开了一种离子束中性检测器系统，包括检测器系统的离子注入机系统和检测离子束中性物质的方法，其确保离子注入满足污染要求。检测器包括一个位于离子注入机系统中的能量污染监测器。本发明的方法包括使用离子束注入工件，并周期性地检测离子束中的离子束中性粒子，使得可以对离子注入机系统进行优化调整。

2. 发明授权

US07170067B2 Ion beam measurement apparatus and method 有权
标题翻译：离子束测量装置及方法
公开(公告)号：US07170067B2
公开(公告)日：2007-01-30
申请号：US11093930
申请日：2005-03-30
申请人： Anthony Renau , Eric Hermanson , Joseph C. Olson , Gordon Angel
发明人： Anthony Renau , Eric Hermanson , Joseph C. Olson , Gordon Angel
IPC分类号： H01J49/00
CPC分类号： H01J37/244 , H01J37/3171 , H01J2237/004 , H01J2237/24405 , H01J2237/31703 , H01J2237/31705
摘要： The present invention provides a combined electrostatically suppressed Faraday and energy contamination monitor and related methods for its use. The apparatus of the present invention is capable of selectively measuring two properties of an ion beam, including, for example, a current and a level of energy contamination in a decelerated ion beam. A first aspect of the invention provides an ion beam measurement apparatus comprising an aperture for receiving the ion beam, a negatively biased electrode disposed adjacent to the aperture, a positively biased electrode disposed adjacent to the negatively biased electrode, a selectively biased electrode disposed adjacent to the positively biased electrode, and a collector, wherein the selectively biased electrode may selectively be negatively biased or positively biased.
摘要翻译：本发明提供了一种组合静电抑制法拉第和能量污染监测器及其使用的相关方法。本发明的装置能够选择性地测量离子束的两个特性，包括例如减速离子束中的电流和能量污染水平。本发明的第一方面提供了一种离子束测量装置，其包括用于接收离子束的孔，邻近孔径设置的负偏置电极，邻近负偏置电极设置的正偏置电极，正偏置电极和集电极，其中选择性偏置电极可以选择性地被负偏置或正偏置。

3. 发明授权

US08716682B2 Apparatus and method for multiple slot ion implantation 有权
标题翻译：多槽离子注入的装置和方法
公开(公告)号：US08716682B2
公开(公告)日：2014-05-06
申请号：US13079369
申请日：2011-04-04
申请人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson
发明人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson
IPC分类号： H05H1/24
CPC分类号： H01J37/3023 , H01J27/024 , H01J37/08 , H01J37/3172 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J37/32752 , H01J2237/31711
摘要： An ion implantation system may comprise a plasma source for providing a plasma and a workpiece holder arranged to receive a bias with respect to the plasma to attract ions across a plasma sheath toward the substrate. The system may also include an extraction plate arrangement comprising a multiplicity of different apertures each arranged to provide an ion beam having ions distributed over a range of angles of incidence on the workpiece, wherein a first ion beam extracted from a first aperture has a first beam profile that differs from a second ion beam extracted from a second aperture.
摘要翻译：离子注入系统可以包括用于提供等离子体的等离子体源和被布置成接收相对于等离子体的偏置的工件夹持器，以将等离子体护套上的离子吸引到衬底。该系统还可以包括提取板装置，其包括多个不同的孔，每个孔被布置成提供具有分布在工件上的入射角范围上的离子的离子束，其中从第一孔提取的第一离子束具有第一束轮廓与从第二孔提取的第二离子束不同。

4. 发明申请

US20120248328A1 APPARATUS AND METHOD FOR MULTIPLE SLOT ION IMPLANTATION 有权
标题翻译：多种植入物的装置和方法
公开(公告)号：US20120248328A1
公开(公告)日：2012-10-04
申请号：US13079369
申请日：2011-04-04
申请人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson
发明人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson
IPC分类号： H01J3/14 , G21G5/00
CPC分类号： H01J37/3023 , H01J27/024 , H01J37/08 , H01J37/3172 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J37/32752 , H01J2237/31711
摘要： An ion implantation system may comprise a plasma source for providing a plasma and a workpiece holder arranged to receive a bias with respect to the plasma to attract ions across a plasma sheath toward the substrate. The system may also include an extraction plate arrangement comprising a multiplicity of different apertures each arranged to provide an ion beam having ions distributed over a range of angles of incidence on the workpiece, wherein a first ion beam extracted from a first aperture has a first beam profile that differs from a second ion beam extracted from a second aperture.
摘要翻译：离子注入系统可以包括用于提供等离子体的等离子体源和被布置成接收相对于等离子体的偏置的工件夹持器，以将等离子体护套上的离子吸引到衬底。该系统还可以包括提取板装置，其包括多个不同的孔，每个孔被布置成提供具有分布在工件上的入射角范围上的离子的离子束，其中从第一孔提取的第一离子束具有第一束轮廓与从第二孔提取的第二离子束不同。

5. 发明授权

US07459692B2 Electron confinement inside magnet of ion implanter 有权
标题翻译：离子注入机磁体内的电子约束
公开(公告)号：US07459692B2
公开(公告)日：2008-12-02
申请号：US11272193
申请日：2005-11-10
申请人： Anthony Renau , Joseph C. Olson , Shengwu Chang , James Buff
发明人： Anthony Renau , Joseph C. Olson , Shengwu Chang , James Buff
IPC分类号： H01J1/50
CPC分类号： H01J37/1475 , H01J37/026 , H01J37/3171 , H01J2237/0041 , H01J2237/0042 , H01J2237/055
摘要： A method and apparatus are disclosed for improving space charge neutralization adjacent a magnet of an ion implanter by confining the electrons inside a magnetic region thereof to reduce electron losses and therefore improve the transport efficiency of a low energy beam. A magnetic pole member for a magnet of an ion implanter is provided that includes an outer surface having a plurality of magnetic field concentration members that form magnetic field concentrations adjacent the magnetic pole member. Electrons that encounter this increased magnetic field are repelled back along the same magnetic field line rather than allowed to escape. An analyzer magnet and ion implanter including the magnet pole are also provided so that a method of improving low energy ion beam space charge neutralization in an ion implanter is realized.
摘要翻译：公开了一种用于通过将电子限制在其磁性区域内以减少电子损失并因此提高低能量束的传输效率来改进邻近离子注入机的磁体的空间电荷中和的方法和装置。提供了一种用于离子注入机的磁体的磁极构件，其包括具有与磁极构件相邻形成磁场浓度的多个磁场浓度构件的外表面。遇到这种增加的磁场的电子沿着相同的磁场线被击退，而不是允许逃逸。还提供了包括磁极的分析器磁体和离子注入机，从而实现了在离子注入机中提高低能量离子束空间电荷中和的方法。

6. 发明申请

US20080078953A1 TECHNIQUE FOR IMPROVING ION IMPLANTATION THROUGHPUT AND DOSE UNIFORMITY 有权
标题翻译：用于改善离子植入和剂量均匀性的技术
公开(公告)号：US20080078953A1
公开(公告)日：2008-04-03
申请号：US11537050
申请日：2006-09-29
申请人： Atul GUPTA , Anthony Renau , Donna L. Smatlak , Joseph C. Olson
发明人： Atul GUPTA , Anthony Renau , Donna L. Smatlak , Joseph C. Olson
IPC分类号： H01J37/304 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/302 , H01J37/304 , H01J2237/20207 , H01J2237/20214 , H01J2237/20228 , H01J2237/24507 , H01J2237/24535 , H01J2237/30455 , H01J2237/30488 , H01J2237/31703
摘要： A technique for improving ion implantation throughput and dose uniformity is disclosed. In one exemplary embodiment, a method for improving ion implantation throughput and dose uniformity may comprise measuring an ion beam density distribution in an ion beam. The method may also comprise calculating an ion dose distribution across a predetermined region of a workpiece that results from a scan velocity profile, wherein the scan velocity profile comprises a first component and a second component that control a relative movement between the ion beam and the workpiece in a first direction and a second direction respectively, and wherein the ion dose distribution is based at least in part on the ion beam density distribution. The method may further comprise adjusting at least one of the first component and the second component of the scan velocity profile to achieve a desired ion dose distribution in the predetermined region of the workpiece.
摘要翻译：公开了一种改善离子注入通量和剂量均匀性的技术。在一个示例性实施例中，用于改善离子注入生产量和剂量均匀性的方法可包括测量离子束中的离子束密度分布。该方法还可以包括计算由扫描速度分布导致的工件的预定区域上的离子剂量分布，其中扫描速度分布包括第一组分和第二组分，其控制离子束和工件之间的相对运动在第一方向和第二方向上，并且其中所述离子剂量分布至少部分地基于所述离子束密度分布。该方法还可以包括调整扫描速度分布的第一分量和第二分量中的至少一个，以在工件的预定区域中实现期望的离子剂量分布。

7. 发明授权

US06573518B1 Bi mode ion implantation with non-parallel ion beams 有权
标题翻译：具有非平行离子束的Bi模式离子注入
公开(公告)号：US06573518B1
公开(公告)日：2003-06-03
申请号：US09699653
申请日：2000-10-30
申请人： Anthony Renau , Joseph C. Olson
发明人： Anthony Renau , Joseph C. Olson
IPC分类号： H01J37317
CPC分类号： H01J37/3171 , H01J2237/24528 , H01J2237/24542
摘要： A method for implanting ions into a workpiece, such as a semiconductor wafer, includes the steps of generating an ion beam, measuring an angle of non-parallelism of the ion beam, tilting the wafer at a first angle, performing a first implant at the first angle, tilting the wafer at a second angle, and performing a second implant at the second angle. The first and second angles are opposite in sign with respect to a reference direction and in magnitude are equal to or greater than the measured angle of non-parallelism. Preferably, the first and second implants are controlled to provide substantially equal ion doses in the workpiece.
摘要翻译：用于将离子注入到诸如半导体晶片的工件中的方法包括以下步骤：产生离子束，测量离子束的非平行度的角度，以第一角度倾斜晶片，在第一角度，以第二角度倾斜晶片，并且以第二角度执行第二植入。第一和第二角度相对于参考方向的符号相反，并且幅度等于或大于所测量的非平行度的角度。优选地，控制第一和第二植入物以在工件中提供基本相等的离子剂量。

8. 发明授权

US08455760B2 Interfacing two insulation parts in high voltage environment 有权
标题翻译：在高压环境下接合两个绝缘部件
公开(公告)号：US08455760B2
公开(公告)日：2013-06-04
申请号：US12983706
申请日：2011-01-03
申请人： Russell J. Low , Kasegn Tekletsadik , Anthony Renau , Piotr R. Lubicki , D. Jeffrey Lischer , Steve Krause , Eric Hermanson , Doug E. May
发明人： Russell J. Low , Kasegn Tekletsadik , Anthony Renau , Piotr R. Lubicki , D. Jeffrey Lischer , Steve Krause , Eric Hermanson , Doug E. May
IPC分类号： H01R4/02
CPC分类号： H05H7/00 , H01B17/66 , H01J37/241 , H01J37/3171 , H01J2237/038
摘要： Methods of interfacing parts in a high voltage environment and related structures are disclosed. A method comprises: providing a first part and a second part; and interfacing the first part and the second part to create a first substantially zero electrical field area at a first outer extent of an interface between the first and second parts and a reduced electrical field area in a different portion of the interface.
摘要翻译：公开了在高电压环境中部分接口的相关结构的方法。一种方法包括：提供第一部分和第二部分; 以及接合所述第一部分和所述第二部分以在所述第一部分和所述第二部分之间的界面的第一外部范围处形成第一基本为零的电场区域，以及在所述界面的不同部分中的减小的电场区域。

9. 发明申请

US20060192134A1 Ion beam measurement apparatus and method 有权
标题翻译：离子束测量装置及方法
公开(公告)号：US20060192134A1
公开(公告)日：2006-08-31
申请号：US11093930
申请日：2005-03-30
申请人： Anthony Renau , Eric Hermanson , Joseph Olson , Gordon Angel
发明人： Anthony Renau , Eric Hermanson , Joseph Olson , Gordon Angel
IPC分类号： G01K1/08
CPC分类号： H01J37/244 , H01J37/3171 , H01J2237/004 , H01J2237/24405 , H01J2237/31703 , H01J2237/31705
摘要： The present invention provides a combined electrostatically suppressed Faraday and energy contamination monitor and related methods for its use. The apparatus of the present invention is capable of selectively measuring two properties of an ion beam, including, for example, a current and a level of energy contamination in a decelerated ion beam. A first aspect of the invention provides an ion beam measurement apparatus comprising an aperture for receiving the ion beam, a negatively biased electrode disposed adjacent to the aperture, a positively biased electrode disposed adjacent to the negatively biased electrode, a selectively biased electrode disposed adjacent to the positively biased electrode, and a collector, wherein the selectively biased electrode may selectively be negatively biased or positively biased.
摘要翻译：本发明提供了一种组合静电抑制法拉第和能量污染监测器及其使用的相关方法。本发明的装置能够选择性地测量离子束的两个特性，包括例如减速离子束中的电流和能量污染水平。本发明的第一方面提供了一种离子束测量装置，其包括用于接收离子束的孔，邻近孔径设置的负偏置电极，邻近负偏置电极设置的正偏置电极，正偏置电极和集电极，其中选择性偏置电极可以选择性地被负偏置或正偏置。

10. 发明申请

US20110094798A1 INTERFACING TWO INSULATION PARTS IN HIGH VOLTAGE ENVIRONMENT 有权
标题翻译：在高压环境中连接两个绝缘部件
公开(公告)号：US20110094798A1
公开(公告)日：2011-04-28
申请号：US12983706
申请日：2011-01-03
申请人： Russell J. Low , Kasegn D. Tekletsadik , Anthony Renau , Piotr R. Lubicki , D. Jeffrey Lischer , Steve Krause , Eric Hermanson , Doug E. May
发明人： Russell J. Low , Kasegn D. Tekletsadik , Anthony Renau , Piotr R. Lubicki , D. Jeffrey Lischer , Steve Krause , Eric Hermanson , Doug E. May
IPC分类号： H01R4/00
CPC分类号： H05H7/00 , H01B17/66 , H01J37/241 , H01J37/3171 , H01J2237/038
摘要： Methods of interfacing parts in a high voltage environment and related structures are disclosed. A method comprises: providing a first part and a second part; and interfacing the first part and the second part to create a first substantially zero electrical field area at a first outer extent of an interface between the first and second parts and a reduced electrical field area in a different portion of the interface.
摘要翻译：公开了在高电压环境中部分接口的相关结构的方法。一种方法包括：提供第一部分和第二部分; 以及接合所述第一部分和所述第二部分以在所述第一部分和所述第二部分之间的界面的第一外部范围处形成第一基本为零的电场区域，以及在所述界面的不同部分中的减小的电场区域。

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