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    • 8. 发明申请
    • ACTIVE PARTICLE TRAPPING FOR PROCESS CONTROL
    • 用于过程控制的主动粒子捕获
    • US20110049359A1
    • 2011-03-03
    • US12943694
    • 2010-11-10
    • Peter NUNANGregory RedinboJulian BlakePaul S. Buccos
    • Peter NUNANGregory RedinboJulian BlakePaul S. Buccos
    • H01J49/00
    • H01L21/67213C23C14/48C23C14/564H01L21/67017
    • A particle isolation system includes a semiconductor process chamber; at least one member within the semiconductor process chamber wherein the member has at least a first position and a second position; and at least one isolation compartment having a plurality of walls, the isolation compartment defined by the plurality of walls, at least one of the plurality of walls of the isolation compartment defining at least one opening wherein the member in the first position permits particles to enter the isolation compartment from the semiconductor process chamber through the opening, and wherein the member in the second position substantially encloses the isolation compartment thereby substantially retaining the particles in the isolation compartment and substantially limiting movement of the particles between the semiconductor process chamber and the isolation compartment through the opening. An ion implant system is also provided.
    • 粒子隔离系统包括半导体处理室; 所述半导体处理室内的至少一个构件,其中所述构件具有至少第一位置和第二位置; 以及至少一个具有多个壁的隔离室,隔离室由多个壁限定,隔离隔室的多个壁中的至少一个限定了至少一个开口,其中第一位置的构件允许颗粒进入 所述隔离室通过所述开口与所述半导体处理室隔离,并且其中所述第二位置中的所述构件基本上包围所述隔离隔室,从而将所述颗粒基本上保持在所述隔离室中,并且基本上限制所述颗粒在所述半导体处理室和所述隔离室之间的运动 通过开放。 还提供离子注入系统。
    • 9. 发明申请
    • Active particle trapping for process control
    • 用于过程控制的活性颗粒捕集
    • US20080157007A1
    • 2008-07-03
    • US11646155
    • 2006-12-27
    • Peter NunanGregory RedinboJulian BlakePaul S. Buccos
    • Peter NunanGregory RedinboJulian BlakePaul S. Buccos
    • H01J37/09
    • H01L21/67213C23C14/48C23C14/564H01L21/67017
    • A particle isolation system includes a semiconductor process chamber; at least one member within the semiconductor process chamber wherein the member has at least a first position and a second position; and at least one isolation compartment having a plurality of walls, the isolation compartment defined by the plurality of walls, at least one of the plurality of walls of the isolation compartment defining at least one opening wherein the member in the first position permits particles to enter the isolation compartment from the semiconductor process chamber through the opening, and wherein the member in the second position substantially encloses the isolation compartment thereby substantially retaining the particles in the isolation compartment and substantially limiting movement of the particles between the semiconductor process chamber and the isolation compartment through the opening. An ion implant system is also provided.
    • 粒子隔离系统包括半导体处理室; 所述半导体处理室内的至少一个构件,其中所述构件具有至少第一位置和第二位置; 以及至少一个具有多个壁的隔离室,隔离室由多个壁限定,隔离隔室的多个壁中的至少一个限定了至少一个开口,其中第一位置的构件允许颗粒进入 所述隔离室通过所述开口与所述半导体处理室隔离,并且其中所述第二位置中的所述构件基本上包围所述隔离隔室,从而将所述颗粒基本上保持在所述隔离室中,并且基本上限制所述颗粒在所述半导体处理室和所述隔离室之间的运动 通过开放。 还提供离子注入系统。