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1. 发明申请

US20050263721A1 Uniformity control using multiple tilt axes, rotating wafer and variable scan velocity 有权
标题翻译：使用多个倾斜轴，旋转晶片和可变扫描速度的均匀性控制
公开(公告)号：US20050263721A1
公开(公告)日：2005-12-01
申请号：US11021420
申请日：2004-12-23
申请人： Anthony Renau , Joseph Olson , Donna Smatlak , Jun Lu
发明人： Anthony Renau , Joseph Olson , Donna Smatlak , Jun Lu
IPC分类号： G21K5/10 , H01J37/08
CPC分类号： H01J37/3023 , H01J37/304 , H01J37/3171 , H01J2237/20214 , H01J2237/31703 , H01L21/265
摘要： A system, method and program product for enhancing dose uniformity during ion implantation are disclosed. The present invention is directed to allowing the use of an at least partially untuned ion beam to obtain a uniform implant by scanning the beam in multiple rotationally-fixed orientations (scan directions) of the target at variable or non-uniform scan velocities. The non-uniform scan velocities are dictated by a scan velocity profile that is generated based on the ion beam profile and/or the scan direction. The beam can be of any size, shape or tuning. A platen holding a wafer is rotated to a new desired rotationally-fixed orientation after a scan, and a subsequent scan occurs at the same scan velocity profile or a different scan velocity profile. Also included is a method, system and program product for conducting a uniform dose ion implantation in which the target is rotated and tilted about greater than one axes relative to the ion beam.
摘要翻译：公开了一种用于在离子注入期间增强剂量均匀性的系统，方法和程序产品。本发明旨在允许使用至少部分未经调制的离子束以可变或不均匀的扫描速度扫描靶的多个旋转固定取向（扫描方向）来获得均匀的注入。不均匀的扫描速度由基于离子束分布和/或扫描方向产生的扫描速度分布决定。光束可以是任何尺寸，形状或调谐。在扫描之后，保持晶片的压板旋转到新的期望的旋转固定取向，并且随后的扫描以相同的扫描速度分布或不同的扫描速度分布发生。还包括用于进行均匀剂量离子注入的方法，系统和程序产品，其中靶相对于离子束旋转并且倾斜大于大于一个轴。

2. 发明申请

US20050258379A1 Uniformity control using multiple fixed wafer orientations and variable scan velocity 有权
标题翻译：使用多个固定晶片取向和可变扫描速度的均匀性控制
公开(公告)号：US20050258379A1
公开(公告)日：2005-11-24
申请号：US11008764
申请日：2004-12-08
申请人： Anthony Renau , Joseph Olson , Donna Smatlak , Jun Lu
发明人： Anthony Renau , Joseph Olson , Donna Smatlak , Jun Lu
IPC分类号： G21K5/10 , H01J37/08
CPC分类号： H01J37/3023 , H01J37/304 , H01J37/3171 , H01J2237/20214 , H01J2237/31703 , H01L21/265
摘要： A system, method and program product for enhancing dose uniformity during ion implantation are disclosed. The present invention is directed to allowing the use of an at least partially un-tuned ion beam to obtain a uniform implant by scanning the beam in multiple rotationally-fixed orientations (scan directions) of the target at variable or non-uniform scan velocities. The non-uniform scan velocities are dictated by a scan velocity profile that is generated based on the ion beam profile and/or the scan direction. The beam can be of any size, shape or tuning. A platen holding a wafer is rotated to a new desired rotationally-fixed orientation after a scan, and a subsequent scan occurs at the same scan velocity profile or a different scan velocity profile. This technique may be used independently or in conjunction with other uniformity approaches to achieve the required level of uniformity.
摘要翻译：公开了一种用于在离子注入期间增强剂量均匀性的系统，方法和程序产品。本发明旨在允许使用至少部分未调谐的离子束通过以可变或不均匀的扫描速度以目标的多个旋转固定取向（扫描方向）扫描光束来获得均匀的注入。不均匀的扫描速度由基于离子束分布和/或扫描方向产生的扫描速度分布决定。光束可以是任何尺寸，形状或调谐。在扫描之后，保持晶片的压板旋转到新的期望的旋转固定取向，并且随后的扫描以相同的扫描速度分布或不同的扫描速度分布发生。该技术可以独立地使用或与其他均匀性方法结合使用以实现所需的均匀性水平。

3. 发明申请

US20060169915A1 Ion source configuration for production of ionized clusters, ionized molecules and ionized mono-atoms 有权
标题翻译：用于生产离子簇，离子化分子和离子化单原子的离子源配置
公开(公告)号：US20060169915A1
公开(公告)日：2006-08-03
申请号：US11269033
申请日：2005-11-08
申请人： Joseph Olson , Anthony Renau , Donna Smatlak , Kurt Deckerlucke , Paul Murphy , Alexander Perel , Russell Low , Peter Kurunczi
发明人： Joseph Olson , Anthony Renau , Donna Smatlak , Kurt Deckerlucke , Paul Murphy , Alexander Perel , Russell Low , Peter Kurunczi
IPC分类号： H01L21/336 , H01J27/00
CPC分类号： H01J37/08 , H01J27/08 , H01J2237/0812 , H01J2237/082 , H01J2237/0825 , H01J2237/0827 , H01J2237/31701
摘要： Ion sources and methods for generating molecular ions in a cold operating mode and for generating atomic ions in a hot operating mode are provided. In some embodiments, first and second electron sources are located at opposite ends of an arc chamber. The first electron source is energized in the cold operating mode, and the second electron source is energized in the hot operating mode. In other embodiments, electrons are directed through a hole in a cathode in the cold operating mode and are directed at the cathode in the hot operating mode. In further embodiments, an ion beam generator includes a molecular ion source, an atomic ion source and a switching element to select the output of one of the ion sources.
摘要翻译：提供了用于在冷操作模式中产生分子离子并用于在热操作模式中产生原子离子的离子源和方法。在一些实施例中，第一和第二电子源位于电弧室的相对端。第一电子源在冷操作模式下通电，并且第二电子源在热操作模式下通电。在其他实施例中，电子以冷操作模式被引导通过阴极中的孔，并且在热操作模式中被引导到阴极。在另外的实施例中，离子束发生器包括分子离子源，原子离子源和用于选择一个离子源的输出的开关元件。

4. 发明授权

US07683347B2 Technique for improving ion implantation throughput and dose uniformity 有权
标题翻译：提高离子注入量和剂量均匀性的技术
公开(公告)号：US07683347B2
公开(公告)日：2010-03-23
申请号：US11537050
申请日：2006-09-29
申请人： Atul Gupta , Anthony Renau , Donna Smatlak , Joseph C. Olson
发明人： Atul Gupta , Anthony Renau , Donna Smatlak , Joseph C. Olson
IPC分类号： H01J37/317 , H01L21/265
CPC分类号： H01J37/3171 , H01J37/302 , H01J37/304 , H01J2237/20207 , H01J2237/20214 , H01J2237/20228 , H01J2237/24507 , H01J2237/24535 , H01J2237/30455 , H01J2237/30488 , H01J2237/31703
摘要： A technique for improving ion implantation throughput and dose uniformity is disclosed. In one exemplary embodiment, a method for improving ion implantation throughput and dose uniformity may comprise measuring an ion beam density distribution in an ion beam. The method may also comprise calculating an ion dose distribution across a predetermined region of a workpiece that results from a scan velocity profile, wherein the scan velocity profile comprises a first component and a second component that control a relative movement between the ion beam and the workpiece in a first direction and a second direction respectively, and wherein the ion dose distribution is based at least in part on the ion beam density distribution. The method may further comprise adjusting at least one of the first component and the second component of the scan velocity profile to achieve a desired ion dose distribution in the predetermined region of the workpiece.
摘要翻译：公开了一种改善离子注入通量和剂量均匀性的技术。在一个示例性实施例中，用于改善离子注入生产量和剂量均匀性的方法可包括测量离子束中的离子束密度分布。该方法还可以包括计算由扫描速度分布导致的工件的预定区域上的离子剂量分布，其中扫描速度分布包括第一组分和第二组分，其控制离子束和工件之间的相对运动在第一方向和第二方向上，并且其中所述离子剂量分布至少部分地基于所述离子束密度分布。该方法还可以包括调整扫描速度分布的第一分量和第二分量中的至少一个，以在工件的预定区域中实现期望的离子剂量分布。

5. 发明授权

US06403972B1 Methods and apparatus for alignment of ion beam systems using beam current sensors 有权
标题翻译：使用光束电流传感器对离子束系统进行对准的方法和装置
公开(公告)号：US06403972B1
公开(公告)日：2002-06-11
申请号：US09349828
申请日：1999-07-08
申请人： Antonella Cucchetti , Leo Vincent Klos, Jr. , Joseph C. Olson , Raymond L. Pelletier , Keith Pierce , Anthony Renau , Donna Smatlak
发明人： Antonella Cucchetti , Leo Vincent Klos, Jr. , Joseph C. Olson , Raymond L. Pelletier , Keith Pierce , Anthony Renau , Donna Smatlak
IPC分类号： H01J3730
CPC分类号： G21K1/08 , G21K1/093 , G21K5/04 , G21K5/10 , H01J37/304 , H01J37/3171 , H01J2237/24405 , H01J2237/24528 , H01J2237/30433 , H01J2237/30472
摘要： An ion beam is sensed with a beam current sensor which has a sensing aperture that is smaller than a cross-sectional dimension of the ion beam at the beam current sensor. The sensed ion beam current is indicative of ion beam position relative to a desired ion beam path. The ion beam position may be adjusted if the sensed ion beam position differs from the desired ion beam path. One or more beam current sensors may be utilized in an ion implanter for calibration and/or alignment. The beam current sensor may be utilized to determine a relation between a characteristic of an ion beam, such as magnetic rigidity, and a parameter of a system element, such as magnetic field, required to direct the ion beam along a desired ion beam path.
摘要翻译：用束电流传感器感测离子束，其具有小于束电流传感器处的离子束的横截面尺寸的感测孔径。感测的离子束电流指示相对于期望的离子束路径的离子束位置。如果感测的离子束位置与期望的离子束路径不同，则可以调节离子束位置。用于校准和/或对准的离子注入机中可以使用一个或多个束电流传感器。束电流传感器可以用于确定离子束的特性（例如磁刚性）与系统元件（诸如磁场）的参数之间的关系，以将离子束沿着期望的离子束路径引导。

6. 发明申请

US20060169912A1 Electron injection in ion implanter magnets 有权
标题翻译：离子注入机磁体中的电子注入
公开(公告)号：US20060169912A1
公开(公告)日：2006-08-03
申请号：US11281175
申请日：2005-11-17
申请人： Anthony Renau , Donna Smatlak , James Buff , Eric Hermanson
发明人： Anthony Renau , Donna Smatlak , James Buff , Eric Hermanson
IPC分类号： H01J1/50
CPC分类号： H01J27/02 , H01J37/026 , H01J37/05 , H01J37/3171 , H01J2237/0041 , H01J2237/055 , H01J2237/057 , H05H7/08
摘要： One or more electron sources are utilized to inject electrons into an ion beam being transported between the polepieces of a magnet. In some embodiments, the electron sources are located in cavities in one or both polepieces of the magnet. In other embodiments, a radio frequency or microwave plasma flood gun is located in a cavity in at least one of the polepieces or between the polepieces.
摘要翻译：一个或多个电子源用于将电子注入到在磁体的极柱之间传输的离子束中。在一些实施例中，电子源位于磁体的一个或两个磁极中的空腔中。在其他实施例中，无线电频率或微波等离子体喷枪位于至少一个极杆中或杆之间的空腔中。

7. 发明申请

US20070085037A1 Method, system, and apparatus for improving doping uniformity in high-tilt ion implantation 有权
标题翻译：用于改善高倾斜离子注入中的掺杂均匀性的方法，系统和装置
公开(公告)号：US20070085037A1
公开(公告)日：2007-04-19
申请号：US11241406
申请日：2005-09-30
申请人： Shengwu Chang , Isao Tsunoda , Nobihiro Tokoro , Dennis Rodier , Joseph Olson , Donna Smatlak , Damian Brennan , William Bintz
发明人： Shengwu Chang , Isao Tsunoda , Nobihiro Tokoro , Dennis Rodier , Joseph Olson , Donna Smatlak , Damian Brennan , William Bintz
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J2237/20207 , H01J2237/24405 , H01J2237/2446 , H01J2237/31703
摘要： The invention provides a method, system, and apparatus for improving doping uniformity during ion implantation, particularly during a high-tilt ion implantation. In one embodiment, the invention provides a method for improving doping uniformity in a high-tilt ion implantation, the method comprising the steps of: positioning a wafer along an axis perpendicular to an ion beam scan plane to form an angle between a surface of the wafer and a plane perpendicular to the ion beam; measuring a current of the ion beam by moving a current detector across the ion beam in a path substantially coplanar with a surface of the wafer; and adjusting a doping uniformity of the ion beam current based on the measuring step.
摘要翻译：本发明提供了一种用于改善离子注入期间掺杂均匀性的方法，系统和装置，特别是在高倾斜离子注入期间。在一个实施例中，本发明提供了一种用于改善高倾斜离子注入中的掺杂均匀性的方法，所述方法包括以下步骤：沿垂直于离子束扫描平面的轴定位晶片，以形成晶片的表面之间的角度晶片和垂直于离子束的平面; 通过在与晶片表面基本共面的路径中移动电流检测器跨越离子束来测量离子束的电流; 以及基于测量步骤调整离子束电流的掺杂均匀性。

8. 发明授权

US07462844B2 Method, system, and apparatus for improving doping uniformity in high-tilt ion implantation 有权
标题翻译：用于改善高倾斜离子注入中的掺杂均匀性的方法，系统和装置
公开(公告)号：US07462844B2
公开(公告)日：2008-12-09
申请号：US11241406
申请日：2005-09-30
申请人： Shengwu Chang , Isao Tsunoda , Nobihiro Tokoro , Dennis Rodier , Joseph C. Olson , Donna Smatlak , Damian Brennan , William Bintz
发明人： Shengwu Chang , Isao Tsunoda , Nobihiro Tokoro , Dennis Rodier , Joseph C. Olson , Donna Smatlak , Damian Brennan , William Bintz
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J2237/20207 , H01J2237/24405 , H01J2237/2446 , H01J2237/31703
摘要： The invention provides a method, system, and apparatus for improving doping uniformity during ion implantation, particularly during a high-tilt ion implantation. In one embodiment, the invention provides a method for improving doping uniformity in a high-tilt ion implantation, the method comprising the steps of: positioning a wafer along an axis perpendicular to an ion beam scan plane to form an angle between a surface of the wafer and a plane perpendicular to the ion beam; measuring a current of the ion beam by moving a current detector across the ion beam in a path substantially coplanar with a surface of the wafer; and adjusting a doping uniformity of the ion beam current based on the measuring step.
摘要翻译：本发明提供了一种用于改善离子注入期间掺杂均匀性的方法，系统和装置，特别是在高倾斜离子注入期间。在一个实施例中，本发明提供了一种用于改善高倾斜离子注入中的掺杂均匀性的方法，所述方法包括以下步骤：沿垂直于离子束扫描平面的轴定位晶片，以形成晶片的表面之间的角度晶片和垂直于离子束的平面; 通过在与晶片表面基本共面的路径中移动电流检测器跨越离子束来测量离子束的电流; 以及基于测量步骤调整离子束电流的掺杂均匀性。

9. 发明申请

US20050205211A1 Plasma immersion ion implantion apparatus and method 审中-公开
标题翻译：等离子体浸没离子注入装置及方法
公开(公告)号：US20050205211A1
公开(公告)日：2005-09-22
申请号：US10805966
申请日：2004-03-22
申请人： Vikram Singh , Timothy Miller , Paul Murphy , Harold Persing , Jay Scheuer , Donna Smatlak , Edmund Winder , Robert Bettencourt
发明人： Vikram Singh , Timothy Miller , Paul Murphy , Harold Persing , Jay Scheuer , Donna Smatlak , Edmund Winder , Robert Bettencourt
IPC分类号： H01J37/32 , C23F1/00
CPC分类号： H01J37/32412
摘要： A plasma immersion ion implant apparatus and method, and a plasma chamber, each configured to provide a uniform ion flux and to dissipate the effects of secondary electrons are disclosed. The invention includes a plasma chamber including a dielectric tophat configuration and a conductive top section that may be liquid cooled. In addition, the invention provides a radio frequency (RF) antenna configuration including an active antenna that is coupled to an RF source and a parasitic antenna that is not directly coupled to any RF source, but may be grounded. The RF antenna allows for tuning of the RF coupling.
摘要翻译：公开了一种等离子体浸没离子注入装置和方法以及等离子体室，每个等离子体室被配置成提供均匀的离子通量并消散二次电子的作用。本发明包括一个等离子体室，该等离子体室包括一个电介质构造和一个可以被液体冷却的导电顶部。此外，本发明提供了一种射频（RF）天线配置，其包括耦合到RF源的有源天线和不直接耦合到任何RF源但可以接地的寄生天线。 RF天线允许调谐RF耦合。

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