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41. 发明授权

US08221579B2 Method of reusing a consumable part for use in a plasma processing apparatus 有权
标题翻译：重复使用等离子体处理装置中的消耗部件的方法
公开(公告)号：US08221579B2
公开(公告)日：2012-07-17
申请号：US12813819
申请日：2010-06-11
申请人： Nobuyuki Nagayama , Naoyuki Satoh , Keiichi Nagakubo , Kazuya Nagaseki
发明人： Nobuyuki Nagayama , Naoyuki Satoh , Keiichi Nagakubo , Kazuya Nagaseki
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/465 , C23C16/0227 , C23C16/325 , C23C16/4418 , H01J37/32467 , H01J37/32862
摘要： In a method of reusing a consumable part for use in a plasma processing apparatus, a silicon carbide (SiC) lump is formed by depositing SiC by chemical vapor deposition (CVD), and a consumable part for the plasma processing apparatus is manufactured by processing the SiC lump, the consumable part having a predetermined shape. A first plasma process is performed on a substrate by using the manufactured consumable part. A surface of the consumable part that has been eroded by the plasma process is subjected to a clean process for a specific period of time. SiC is deposited on the cleaned surface of the eroded consumable part by CVD. A consumable part having the predetermined shape is remanufactured by processing the eroded consumable part having the surface on which the SiC is deposited. A second plasma process is performed on a substrate by using the remanufactured consumable part.
摘要翻译：在重新使用等离子体处理装置中的消耗部件的方法中，通过化学气相沉积（CVD）沉积SiC形成碳化硅（SiC）块，并且通过将等离子体处理装置的消耗部件 SiC块，该消耗部件具有预定的形状。通过使用制造的消耗部件在基板上进行第一等离子体处理。已经被等离子体处理侵蚀的可消耗部件的表面经过一段干净的处理一段时间。通过CVD将SiC沉积在被腐蚀的消耗部件的清洁表面上。具有预定形状的消耗部件通过处理具有沉积SiC的表面的侵蚀的消耗部件来再制造。通过使用再制造的消耗部件在基板上进行第二等离子体处理。

42. 发明授权

US07749914B2 Plasma etching method 有权
标题翻译：等离子蚀刻法
公开(公告)号：US07749914B2
公开(公告)日：2010-07-06
申请号：US10960538
申请日：2004-10-08
申请人： Masanobu Honda , Kazuya Nagaseki , Hisataka Hayashi
发明人： Masanobu Honda , Kazuya Nagaseki , Hisataka Hayashi
IPC分类号： H01L21/302
CPC分类号： H01J37/32688 , H01J2237/3347 , H01L21/31138 , H01L21/31144
摘要： The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having an organic-material film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and plasma-etching the organic-material film of the substrate by means of the plasma partway in order to form a groove having a flat bottom. A frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.
摘要翻译：本发明是一种等离子体蚀刻方法，包括：将一对电极相对设置在室中并使其中一个电极以使基板布置在电极之间的方式支撑待加工基板的布置步骤，基板具有有机材料膜; 以及蚀刻步骤，向所述电极中的至少一个施加高频电力，以在所述一对电极之间形成高频电场，将处理气体供应到所述室中以形成所述处理气体的等离子体，以通过电场的方法，以及通过等离子体中途等离子体刻蚀基板的有机材料膜以形成具有平坦底部的凹槽。在蚀刻步骤中，施加到至少一个电极的高频电力的频率为50〜150MHz。

43. 发明授权

US07641806B2 Manufacturing method for membrane member 有权
标题翻译：膜构件的制造方法
公开(公告)号：US07641806B2
公开(公告)日：2010-01-05
申请号：US10864374
申请日：2004-06-10
申请人： Katsuya Okumura , Kazuya Nagaseki , Naoyuki Satoh , Koji Maruyama
发明人： Katsuya Okumura , Kazuya Nagaseki , Naoyuki Satoh , Koji Maruyama
IPC分类号： H01L21/302 , H01J33/00
CPC分类号： H01J33/04 , B81B3/007 , B81B2203/0127 , B81C1/00158 , B81C2201/0198 , B81C2203/051 , G03F1/22 , G21K1/10 , H01J9/24 , H01J2237/31788
摘要： By steps of forming first masks 13, 14 each having a first pattern on a first surface of a substrate 11 on which a membrane is to be formed, etching the first surface of the substrate 11 by using the first masks 13, 14 to forming first support beams 15, positioning a second surface of the substrate 11 on the basis of the first pattern on the first surface, forming a second mask 17 having a second pattern on the second surface of the substrate 11 based on the alignment and etching the second surface of the substrate 11 in dry by using the second mask 17 to form the second support beams 20, a membrane member 22a where the first and second support beams 15, 20 are formed on both surfaces of the membrane 12 is manufactured. Consequently, it is possible to provide the membrane member that is sufficient in strength and is hard to be deformed by heat.
摘要翻译：通过形成第一掩模13,14的步骤，每个第一掩模13,14具有在其上将要形成膜的基板11的第一表面上的第一图案，通过使用第一掩模13,14蚀刻基板11的第一表面以形成第一支撑梁15，基于第一图案在第一表面上定位基板11的第二表面，基于对准并蚀刻第二表面，在基板11的第二表面上形成具有第二图案的第二掩模17 通过使用第二掩模17来形成第二支撑梁20的基板11干燥的膜构件22a，其中在膜12的两个表面上形成有第一和第二支撑梁15,20的膜构件22a。因此，可以提供足够强度并且难以被热变形的膜部件。

44. 发明授权

US07344652B2 Plasma etching method 失效
标题翻译：等离子蚀刻法
公开(公告)号：US07344652B2
公开(公告)日：2008-03-18
申请号：US11487516
申请日：2006-07-17
申请人： Kazuya Nagaseki , Takanori Mimura , Hiroki Miyajima
发明人： Kazuya Nagaseki , Takanori Mimura , Hiroki Miyajima
IPC分类号： H01L21/00 , B44C1/22
CPC分类号： H01L21/67069 , H01J37/32623 , H01L21/3065 , H01L21/3081 , H01L21/3083
摘要： An etching method for forming a recess (220) having an opening dimension (R) of millimeter order in an object (212) to be etched such as a semiconductor wafer. A mask (214) having an opening corresponding to the recess (220) is formed on the object (212). The object (212) with the mask (214) is placed in a processing vessel for plasma etching and etched in it using a plasma. The material of the portion around the opening of the mask (214) is the same as the material, for example, silicon of the object (212). Hence, the recess (220) can be so formed as not to form a sub-trench shape (a shape formed by etching the periphery of which is deeper than the center) substantially in the bottom (222).
摘要翻译：一种蚀刻方法，用于在被蚀刻的物体（212）中形成具有毫米级的开口尺寸（R）的凹部（220），例如半导体晶片。在物体（212）上形成具有对应于凹部（220）的开口的面罩（214）。将具有掩模（214）的物体（212）放置在用于等离子体蚀刻的处理容器中，并使用等离子体蚀刻在其中。掩模（214）的开口周围部分的材料与物体（212）的材料（例如硅）相同。因此，凹部（220）可以形成为不形成基本上在底部（222）中形成副沟槽形状（通过蚀刻其周边比中心更深的形状形成的形状）。

45. 发明授权

US07338576B2 Plasma processing device 失效
标题翻译：等离子处理装置
公开(公告)号：US07338576B2
公开(公告)日：2008-03-04
申请号：US10490027
申请日：2002-09-19
申请人： Hiroo Ono , Koichi Tateshita , Masanobu Honda , Kazuya Nagaseki , Daisuke Hayashi
发明人： Hiroo Ono , Koichi Tateshita , Masanobu Honda , Kazuya Nagaseki , Daisuke Hayashi
IPC分类号： H01L21/00
CPC分类号： H01J37/32623 , H01J37/32688
摘要： Each magnet segment 22 of a magnetic field forming mechanism 21 is constructed such that, after the magnetic pole of each magnet segment 22 set to face a vacuum chamber 1 as shown in FIG. 3A, adjoining magnet segments 22 are synchronously rotated in opposite directions, and hence every other magnet element 22 is rotated in the same direction as shown in FIGS. 3B, 3C to thereby control the status of a multi-pole magnetic field formed in the vacuum chamber 1 and surrounding a semiconductor wafer W. Therefore, the status of a multi-pole magnetic field can be easily controlled and set appropriately according to a type of plasma processing process to provide a good processing easily.
摘要翻译：磁场形成机构21的每个磁体段22被构造成使得在每个磁体段22的磁极设置成面对如图1所示的真空室1之后。如图3A所示，相邻的磁体段22沿相反方向同步旋转，因此每隔一个磁体元件22沿与图1和图2所示相同的方向旋转。 3 B，3 C，从而控制形成在真空室1中并围绕半导体晶片W的多极磁场的状态。因此，可以容易地控制并设置多极磁场的状态，根据一种等离子体处理工艺，容易提供良好的加工。

46. 发明授权

US06544380B2 Plasma treatment method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US06544380B2
公开(公告)日：2003-04-08
申请号：US10079600
申请日：2002-02-19
申请人： Masayuki Tomoyasu , Akira Koshiishi , Kosuke Imafuku , Shosuke Endo , Kazuhiro Tahara , Yukio Naito , Kazuya Nagaseki , Keizo Hirose , Mitsuaki Komino , Hiroto Takenaka , Hiroshi Nishikawa , Yoshio Sakamoto
发明人： Masayuki Tomoyasu , Akira Koshiishi , Kosuke Imafuku , Shosuke Endo , Kazuhiro Tahara , Yukio Naito , Kazuya Nagaseki , Keizo Hirose , Mitsuaki Komino , Hiroto Takenaka , Hiroshi Nishikawa , Yoshio Sakamoto
IPC分类号： H05H100
CPC分类号： C23C16/45565 , C23C16/4405 , C23C16/4407 , C23C16/4483 , C23C16/4485 , C23C16/4557 , C23C16/5096 , C23C16/517 , H01J37/32082 , H01J37/32146 , H01J37/32155 , H01J37/32165 , H01J37/3244 , H01J37/32935 , H01J37/32963 , Y10S156/916
摘要： An apparatus for treating a substrate which includes a chamber and an opening formed in the chamber allowing the substrate to be conveyed into the chamber or taken out thereof. The chamber, also, includes a detachable baffle plate that fits around an electrode. For treatment to commence, the substrate is placed on the electrode and the chamber is exhausted of or supplied with gases. The electrode is then vertically lifted together with the baffle plate and the baffle plate is moved either to a position that is higher in level than an upper end of the opening of the chamber or to a position that is lower in level than a lower end of the opening of the chamber. This allows the baffle plate to shield a region near the opening of the chamber from a treatment region and allows reaction products to be adhered to the baffle plate.
摘要翻译：一种用于处理基板的设备，其包括室和形成在所述室中的开口，使得所述基板被输送到所述室中或从其中取出。该腔室还包括一个可拆卸的挡板，其围绕电极配合。为了开始处理，将基板放置在电极上，并且室被排出或供应气体。然后将电极与挡板一起垂直提升，并且挡板移动到比室的开口的上端更高的位置，或者移动到比下端更低的位置房间的开放。这允许挡板将腔室开口附近的区域与处理区域隔离，并允许反应产物粘附到挡板。

47. 发明授权

US07862959B2 Transfer mask for exposure and pattern exchanging method of the same 有权
标题翻译：转印掩模的曝光和图案交换方法相同
公开(公告)号：US07862959B2
公开(公告)日：2011-01-04
申请号：US11030963
申请日：2005-01-10
申请人： Katsuya Okumura , Kazuya Nagaseki , Naoyuki Satoh
发明人： Katsuya Okumura , Kazuya Nagaseki , Naoyuki Satoh
IPC分类号： G03F1/00 , G03F7/20
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/20 , G03F1/50 , H01J37/3174 , H01J2237/31788 , H01J2237/31794
摘要： The present invention is a transfer mask for exposure comprising a mask portion having a plurality of cells, each of which an opening of a predetermined pattern is formed in. When one side of the plurality of cells is exposed to a charged particle beam, each of the plurality of cells is adapted to make the charged particle beam pass through itself to the other side thereof based on the pattern of the opening formed in the cell. Thus, when a substrate to be processed is arranged on the other side of the cell, the pattern of the opening formed in the cell is transferred to the substrate to be processed and hence an exposure pattern is formed on the substrate to be processed. The feature of the present invention is that a part of or all the plurality of cells can be exchanged at the mask portion.
摘要翻译：本发明是用于曝光的转印掩模，其包括具有多个单元的掩模部分，每个单元都形成有预定图案的开口。当多个单元的一侧暴露于带电粒子束时，多个单元适于基于形成在单元中的开口的图案使带电粒子束自身通过其自身的另一侧。因此，当待处理基板布置在单元的另一侧时，形成在单元中的开口的图案被转移到待处理的基板，因此在待处理的基板上形成曝光图案。本发明的特征在于，可以在掩模部分更换多个单元的一部分或全部。

48. 发明授权

US07654010B2 Substrate processing system, substrate processing method, and storage medium 有权
标题翻译：基板处理系统，基板处理方法和存储介质
公开(公告)号：US07654010B2
公开(公告)日：2010-02-02
申请号：US11671821
申请日：2007-02-06
申请人： Tsuyoshi Moriya , Kazuya Nagaseki
发明人： Tsuyoshi Moriya , Kazuya Nagaseki
IPC分类号： F26B3/00
CPC分类号： H01L21/67028 , H01L21/67017 , H01L21/68707
摘要： A substrate processing method for a substrate processing system comprising at least a substrate processing apparatus that subjects a substrate to processing, and a substrate transferring apparatus having a transferring device that transfers the substrate, which enables the yield to be increased without bringing about a decrease in the throughput. The substrate processing method comprises a jetting step of jetting a high-temperature gas onto at least one of the transferring device and the substrate transferred by the transferring device.
摘要翻译：一种用于基板处理系统的基板处理方法，其至少包括使基板进行处理的基板处理装置，以及具有转印基板的转印装置的基板转印装置，其能够提高成品率而不会降低吞吐量。基板处理方法包括将高温气体喷射到转印装置和由转印装置转印的基板中的至少一个上的喷射工序。

49. 发明授权

US07084005B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07084005B2
公开(公告)日：2006-08-01
申请号：US10855889
申请日：2004-05-28
申请人： Katsuya Okumura , Koji Maruyama , Kazuya Nagaseki , Akiteru Rai
发明人： Katsuya Okumura , Koji Maruyama , Kazuya Nagaseki , Akiteru Rai
IPC分类号： H01L21/44 , H01L21/48 , H01L21/50
CPC分类号： H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00 , H01L2924/00012
摘要： The present invention relates to a semiconductor device in which an electrode of a device formed on a substrate such as a semiconductor wafer and an electrode of a wiring structure such as an interposer are connected to each other through a connecting electrode extending through the substrate, and a method of manufacturing the same. A semiconductor device according to the present invention includes a first substrate including a front surface and a back surface, a first device having a first electrode being formed on the front surface; and a wiring structure formed with a second electrode, the wiring structure having a principal surface. The first electrode of the first device and the second electrode of the wiring structure are connected to each other by a connecting electrode extending through the first substrate from the front surface to the back surface thereof. Substantially all the back surface of the first substrate is bonded to the principal surface of the wiring structure. A dielectric film formed between the first substrate and the wiring structure may be an adhesive layer.
摘要翻译：本发明涉及一种半导体器件，其中形成在诸如半导体晶片的基板上的器件的电极和诸如中介层之类的布线结构的电极通过延伸穿过衬底的连接电极相互连接，其制造方法。根据本发明的半导体器件包括：第一衬底，其包括前表面和后表面;第一器件，具有形成在前表面上的第一电极; 以及形成有第二电极的布线结构，所述布线结构具有主表面。第一器件的第一电极和布线结构的第二电极通过从第一衬底的前表面延伸到后表面的连接电极彼此连接。基本上所有的第一基板的所有后表面被结合到布线结构的主表面。形成在第一基板和布线结构之间的电介质膜可以是粘合剂层。

50. 发明申请

US20050118516A1 Transfer mask for exposure and pattern exchanging method of the same 有权
标题翻译：转印掩模的曝光和图案交换方法相同
公开(公告)号：US20050118516A1
公开(公告)日：2005-06-02
申请号：US11030963
申请日：2005-01-10
申请人： Katsuya Okumura , Kazuya Nagaseki , Naoyuki Satosh
发明人： Katsuya Okumura , Kazuya Nagaseki , Naoyuki Satosh
IPC分类号： G03F1/20 , G03F7/20 , H01J37/317 , H01L21/027 , H01L21/3205 , G03B27/42 , G03C5/00 , G03F9/00 , H01L21/4763
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/20 , G03F1/50 , H01J37/3174 , H01J2237/31788 , H01J2237/31794
摘要： The present invention is a transfer mask for exposure comprising a mask portion having a plurality of cells, each of which an opening of a predetermined pattern is formed in. When one side of the plurality of cells is exposed to a charged particle beam, each of the plurality of cells is adapted to make the charged particle beam pass through itself to the other side thereof based on the pattern of the opening formed in the cell. Thus, when a substrate to be processed is arranged on the other side of the cell, the pattern of the opening formed in the cell is transferred to the substrate to be processed and hence an exposure pattern is formed on the substrate to be processed. The feature of the present invention is that a part of or all the plurality of cells can be exchanged at the mask portion.
摘要翻译：本发明是用于曝光的转印掩模，其包括具有多个单元的掩模部分，每个单元都形成有预定图案的开口。当多个单元的一侧暴露于带电粒子束时，多个单元适于基于形成在单元中的开口的图案使带电粒子束自身通过其自身的另一侧。因此，当待处理基板布置在单元的另一侧时，形成在单元中的开口的图案被转移到待处理的基板，因此在待处理的基板上形成曝光图案。本发明的特征在于，可以在掩模部分更换多个单元的一部分或全部。

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