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1. 发明授权

US07625494B2 Plasma etching method and plasma etching unit 失效
标题翻译：等离子体蚀刻方法和等离子体蚀刻单元
公开(公告)号：US07625494B2
公开(公告)日：2009-12-01
申请号：US10860152
申请日：2004-06-04
申请人： Masanobu Honda , Kazuya Nagaseki , Koichiro Inazawa , Shoichiro Matsuyama , Hisataka Hayashi
发明人： Masanobu Honda , Kazuya Nagaseki , Koichiro Inazawa , Shoichiro Matsuyama , Hisataka Hayashi
IPC分类号： H01L21/00 , B23K10/00 , H05H1/18
CPC分类号： H01J37/32082 , H01J37/3266 , H01L21/31138 , H01L21/31144 , H01L21/76802
摘要： The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having an organic-material film and an inorganic-material film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and selectively plasma-etching the organic-material film of the substrate with respect to the inorganic-material film by means of the plasma; wherein a frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.
摘要翻译：本发明是一种等离子体蚀刻方法，包括：将一对电极相对设置在室中并使其中一个电极以使基板布置在电极之间的方式支撑待加工基板的布置步骤，基板具有有机材料膜和无机材料膜; 以及蚀刻步骤，向所述电极中的至少一个施加高频电力，以在所述一对电极之间形成高频电场，将处理气体供应到所述室中以形成所述处理气体的等离子体，以通过电场的手段，通过等离子体选择性地等离子体蚀刻衬底相对于无机材料膜的有机材料膜; 其中在所述蚀刻步骤中施加到所述至少一个所述电极的所述高频电力的频率为50〜150MHz。

2. 发明授权

US08840753B2 Plasma etching unit 有权
标题翻译：等离子体蚀刻单元
公开(公告)号：US08840753B2
公开(公告)日：2014-09-23
申请号：US12578007
申请日：2009-10-13
申请人： Masanobu Honda , Kazuya Nagaseki , Koichiro Inazawa , Shoichiro Matsuyama , Hisataka Hayashi
发明人： Masanobu Honda , Kazuya Nagaseki , Koichiro Inazawa , Shoichiro Matsuyama , Hisataka Hayashi
IPC分类号： H01L21/306 , C23C16/50 , C23C16/00 , H01L21/311 , H01L21/768 , H01J37/32
CPC分类号： H01J37/32082 , H01J37/3266 , H01L21/31138 , H01L21/31144 , H01L21/76802
摘要： The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having an organic-material film and an inorganic-material film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and selectively plasma-etching the organic-material film of the substrate with respect to the inorganic-material film by means of the plasma; wherein a frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.
摘要翻译：本发明是一种等离子体蚀刻方法，包括：将一对电极相对设置在室中并使其中一个电极以使基板布置在电极之间的方式支撑待加工基板的布置步骤，基板具有有机材料膜和无机材料膜; 以及蚀刻步骤，向所述电极中的至少一个施加高频电力，以在所述一对电极之间形成高频电场，将处理气体供应到所述室中以形成所述处理气体的等离子体，以通过电场的手段，通过等离子体选择性地等离子体蚀刻衬底相对于无机材料膜的有机材料膜; 其中在所述蚀刻步骤中施加到所述至少一个所述电极的所述高频电力的频率为50〜150MHz。

3. 发明授权

US07749914B2 Plasma etching method 有权
标题翻译：等离子蚀刻法
公开(公告)号：US07749914B2
公开(公告)日：2010-07-06
申请号：US10960538
申请日：2004-10-08
申请人： Masanobu Honda , Kazuya Nagaseki , Hisataka Hayashi
发明人： Masanobu Honda , Kazuya Nagaseki , Hisataka Hayashi
IPC分类号： H01L21/302
CPC分类号： H01J37/32688 , H01J2237/3347 , H01L21/31138 , H01L21/31144
摘要： The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having an organic-material film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and plasma-etching the organic-material film of the substrate by means of the plasma partway in order to form a groove having a flat bottom. A frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.
摘要翻译：本发明是一种等离子体蚀刻方法，包括：将一对电极相对设置在室中并使其中一个电极以使基板布置在电极之间的方式支撑待加工基板的布置步骤，基板具有有机材料膜; 以及蚀刻步骤，向所述电极中的至少一个施加高频电力，以在所述一对电极之间形成高频电场，将处理气体供应到所述室中以形成所述处理气体的等离子体，以通过电场的方法，以及通过等离子体中途等离子体刻蚀基板的有机材料膜以形成具有平坦底部的凹槽。在蚀刻步骤中，施加到至少一个电极的高频电力的频率为50〜150MHz。

4. 发明授权

US07419613B2 Method and device for plasma-etching organic material film 有权
标题翻译：等离子体蚀刻有机材料膜的方法和装置
公开(公告)号：US07419613B2
公开(公告)日：2008-09-02
申请号：US10538064
申请日：2003-12-25
申请人： Masanobu Honda , Shoichiro Matsuyama , Kazuya Nagaseki , Hisataka Hayashi
发明人： Masanobu Honda , Shoichiro Matsuyama , Kazuya Nagaseki , Hisataka Hayashi
IPC分类号： B44C1/22
CPC分类号： H01L21/31138 , H01J37/32522 , H01J37/32633 , H01J37/32642 , H01J37/32688 , H01J2237/3341
摘要： A support electrode (2) and a counter electrode (16) constituting parallel plate electrodes are disposed in a process vessel (1). A substrate (W) with an organic material film formed thereon is supported by the support electrode (2). A high-frequency power of a frequency of 40 MHz or above for generating the plasma is applied to the support electrode (2), so that a high-frequency electric field is formed between the support electrode (2) and the counter electrode (16). A process gas is supplied into the process vessel (1) to generate plasma of the process gas by the high-frequency electric field. The organic material film on the substrate (W) is etched with the plasma, with an organic material film serving as a mask. The process gas includes an ionization accelerating gas, such as Ar, that is ionized from a ground state or metastable state with an ionization energy of 10 eV or below and has a maximum ionization cross-section of 2×1016 cm2 or above.
摘要翻译：构成平行板电极的支撑电极（2）和对置电极（16）设置在处理容器（1）中。形成有有机材料膜的基板（W）由支撑电极（2）支撑。在支撑电极（2）上施加用于产生等离子体的频率为40MHz以上的高频电力，使得在支撑电极（2）和对电极（16）之间形成高频电场）。将处理气体供给到处理容器（1）中，以通过高频电场产生处理气体的等离子体。用等离子体对基板（W）上的有机材料膜进行蚀刻，将有机材料膜用作掩模。工艺气体包括电离加速气体，例如Ar，其离子化能为10eV或更低的基态或亚稳态离子化，并且具有最大离子化横截面积为2×10 16 cm 2以上。

5. 发明申请

US20050039854A1 Plasma etching method and plasma etching unit 审中-公开
标题翻译：等离子体蚀刻方法和等离子体蚀刻单元
公开(公告)号：US20050039854A1
公开(公告)日：2005-02-24
申请号：US10959585
申请日：2004-10-07
申请人： Shoichiro Matsuyama , Masanobu Honda , Kazuya Nagaseki , Hisataka Hayashi
发明人： Shoichiro Matsuyama , Masanobu Honda , Kazuya Nagaseki , Hisataka Hayashi
IPC分类号： H01L21/3065 , C23F1/00
CPC分类号： H01J37/32082 , H01J37/3266 , H01L21/3065
摘要： The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having a silicon film and an inorganic-material film adjacent to the silicon film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and selectively plasma-etching the silicon film of the substrate by means of the plasma; wherein a frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.
摘要翻译：本发明是一种等离子体蚀刻方法，包括：将一对电极相对设置在室中并使其中一个电极以使基板布置在电极之间的方式支撑待加工基板的布置步骤，基板具有与硅膜相邻的硅膜和无机材料膜; 以及蚀刻步骤，向所述电极中的至少一个施加高频电力，以在所述一对电极之间形成高频电场，将处理气体供应到所述室中以形成所述处理气体的等离子体，以通过电场的方法，通过等离子体选择性地等离子体蚀刻衬底的硅膜; 其中在所述蚀刻步骤中施加到所述至少一个所述电极的所述高频电力的频率为50〜150MHz。

6. 发明申请

US20050103441A1 Etching method and plasma etching apparatus 审中-公开
标题翻译：蚀刻方法和等离子体蚀刻装置
公开(公告)号：US20050103441A1
公开(公告)日：2005-05-19
申请号：US10844498
申请日：2004-05-13
申请人： Masanobu Honda , Kazuya Nagaseki , Hanako Kida , Koichi Yatsuda , Youbun Ito , Koichiro Inazawa , Rie Inazawa , Hisataka Hayashi
发明人： Masanobu Honda , Kazuya Nagaseki , Hanako Kida , Koichi Yatsuda , Youbun Ito , Koichiro Inazawa , Rie Inazawa , Hisataka Hayashi
IPC分类号： H01L21/311 , H01L21/306
CPC分类号： H01J37/32082 , H01J37/32706 , H01L21/31116 , H01L21/31144
摘要： There is provided an etching method and a plasma etching apparatus capable of taking a large etching selection ratio and of forming a hole having an appropriate shape. When etching an etching target film 204 by using an organic film 202 having a predetermined pattern as a mask, processing gas is introduced into an airtight processing container 104. There are provided a high frequency power source 122 of 40 MHz and a high frequency power source 128 of 3.2 MHz, by which two different kinds of high frequency powers are applied to a lower electrode 106. The power of each high frequency power is properly combined, thereby executing the etching process by using low plasma electron density Ne and high self-bias voltage Vdc which are generated by high frequency power.
摘要翻译：提供了能够获得大的蚀刻选择比和形成具有适当形状的孔的蚀刻方法和等离子体蚀刻装置。当通过使用具有预定图案的有机膜202作为掩模蚀刻蚀刻目标膜204时，处理气体被引入到气密处理容器104中。提供40MHz的高频电源122和3.2MHz的高频电源128，通过该高频电源128将两种不同种类的高频功率施加到下电极106。每个高频功率的功率被适当组合，从而通过使用由高频功率产生的低等离子体电子密度Ne和高自偏压Vdc来执行蚀刻处理。

7. 发明申请

US20100024983A1 PLASMA ETCHING UNIT 有权
标题翻译：等离子体蚀刻单元
公开(公告)号：US20100024983A1
公开(公告)日：2010-02-04
申请号：US12578007
申请日：2009-10-13
申请人： Masanobu Honda , Kazuya Nagaseki , Koichiro Inazawa , Shoichiro Matsuyama , Hisataka Hayashi
发明人： Masanobu Honda , Kazuya Nagaseki , Koichiro Inazawa , Shoichiro Matsuyama , Hisataka Hayashi
IPC分类号： H01L21/3065
CPC分类号： H01J37/32082 , H01J37/3266 , H01L21/31138 , H01L21/31144 , H01L21/76802
摘要： The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having an organic-material film and an inorganic-material film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and selectively plasma-etching the organic-material film of the substrate with respect to the inorganic-material film by means of the plasma; wherein a frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.
摘要翻译：本发明是一种等离子体蚀刻方法，包括：将一对电极相对设置在室中并使其中一个电极以使基板布置在电极之间的方式支撑待加工基板的布置步骤，基板具有有机材料膜和无机材料膜; 以及蚀刻步骤，向所述电极中的至少一个施加高频电力，以在所述一对电极之间形成高频电场，将处理气体供应到所述室中以形成所述处理气体的等离子体，以通过电场的手段，通过等离子体选择性地等离子体蚀刻衬底相对于无机材料膜的有机材料膜; 其中在所述蚀刻步骤中施加到所述至少一个所述电极的所述高频电力的频率为50〜150MHz。

8. 发明申请

US20060213865A1 Method and device for plasma-etching organic material film 有权
标题翻译：等离子体蚀刻有机材料膜的方法和装置
公开(公告)号：US20060213865A1
公开(公告)日：2006-09-28
申请号：US10538064
申请日：2003-12-25
申请人： Masanobu Honda , Shoichiro Matsuyama , Kazuya Nagaseki , Hisataka Hayashi
发明人： Masanobu Honda , Shoichiro Matsuyama , Kazuya Nagaseki , Hisataka Hayashi
IPC分类号： C23F1/00 , H01L21/306 , B44C1/22
CPC分类号： H01L21/31138 , H01J37/32522 , H01J37/32633 , H01J37/32642 , H01J37/32688 , H01J2237/3341
摘要： A support electrode (2) and a counter electrode (16) constituting parallel plate electrodes are disposed in a process vessel (1). A substrate (W) with an organic material film formed thereon is supported by the support electrode (2). A high-frequency power of a frequency of 40 MHz or above for generating the plasma is applied to the support electrode (2), so that a high-frequency electric field is formed between the support electrode (2) and the counter electrode (16). A process gas is supplied into the process vessel (1) to generate plasma of the process gas by the high-frequency electric field. The organic material film on the substrate (W) is etched with the plasma, with an organic material film serving as a mask. The process gas includes an ionization accelerating gas, such as Ar, that is ionized from a ground state or metastable state with an ionization energy of 10 eV or below and has a maximum ionization cross-section of 2×1016 cm2 or above.
摘要翻译：构成平行板电极的支撑电极（2）和对置电极（16）设置在处理容器（1）中。形成有有机材料膜的基板（W）由支撑电极（2）支撑。在支撑电极（2）上施加用于产生等离子体的频率为40MHz以上的高频电力，使得在支撑电极（2）和对电极（16）之间形成高频电场）。将处理气体供给到处理容器（1）中，以通过高频电场产生处理气体的等离子体。用等离子体对基板（W）上的有机材料膜进行蚀刻，将有机材料膜用作掩模。工艺气体包括电离加速气体，例如Ar，其离子化能为10eV或更低的基态或亚稳态离子化，并且具有最大离子化横截面积为2×10 16 cm 2以上。

9. 发明申请

US20050082256A1 Plasma etching method 有权
标题翻译：等离子蚀刻法
公开(公告)号：US20050082256A1
公开(公告)日：2005-04-21
申请号：US10960538
申请日：2004-10-08
申请人： Masanobu Honda , Kazuya Nagaseki , Hisataka Hayashi
发明人： Masanobu Honda , Kazuya Nagaseki , Hisataka Hayashi
IPC分类号： C23F1/00 , H01L21/3065 , H01L21/311
CPC分类号： H01J37/32688 , H01J2237/3347 , H01L21/31138 , H01L21/31144
摘要： The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having an organic-material film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and plasma-etching the organic-material film of the substrate by means of the plasma partway in order to form a groove having a flat bottom. A frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.
摘要翻译：本发明是一种等离子体蚀刻方法，包括：将一对电极相对设置在室中并使其中一个电极以使基板布置在电极之间的方式支撑待加工基板的布置步骤，基板具有有机材料膜; 以及蚀刻步骤，向所述电极中的至少一个施加高频电力，以在所述一对电极之间形成高频电场，将处理气体供应到所述室中以形成所述处理气体的等离子体，以通过电场的方法，以及通过等离子体中途等离子体刻蚀基板的有机材料膜以形成具有平坦底部的凹槽。在蚀刻步骤中，施加到至少一个电极的高频电力的频率为50〜150MHz。

10. 发明授权

US07473377B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US07473377B2
公开(公告)日：2009-01-06
申请号：US10959152
申请日：2004-10-07
申请人： Tomoyo Yamaguchi , Takashi Fuse , Kiwamu Fujimoto , Masanobu Honda , Kazuya Nagaseki , Akiteru Koh , Takashi Enomoto , Hiroharu Ito , Akinori Kitamura
发明人： Tomoyo Yamaguchi , Takashi Fuse , Kiwamu Fujimoto , Masanobu Honda , Kazuya Nagaseki , Akiteru Koh , Takashi Enomoto , Hiroharu Ito , Akinori Kitamura
IPC分类号： B44C1/22
CPC分类号： G03F7/091 , H01L21/31116 , H01L21/31144 , H01L21/312
摘要： A plasma processing method includes a step of preparing a process subject having an organic layer on a surface thereof, and a step of irradiating the process subject with H2 plasma to improve plasma resistance of the organic layer.
摘要翻译：等离子体处理方法包括制备其表面上具有有机层的工艺对象的步骤，以及用H 2等离子体照射工艺对象以提高有机层的等离子体电阻的步骤。

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