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1. 发明授权

US07641806B2 Manufacturing method for membrane member 有权
标题翻译：膜构件的制造方法
公开(公告)号：US07641806B2
公开(公告)日：2010-01-05
申请号：US10864374
申请日：2004-06-10
申请人： Katsuya Okumura , Kazuya Nagaseki , Naoyuki Satoh , Koji Maruyama
发明人： Katsuya Okumura , Kazuya Nagaseki , Naoyuki Satoh , Koji Maruyama
IPC分类号： H01L21/302 , H01J33/00
CPC分类号： H01J33/04 , B81B3/007 , B81B2203/0127 , B81C1/00158 , B81C2201/0198 , B81C2203/051 , G03F1/22 , G21K1/10 , H01J9/24 , H01J2237/31788
摘要： By steps of forming first masks 13, 14 each having a first pattern on a first surface of a substrate 11 on which a membrane is to be formed, etching the first surface of the substrate 11 by using the first masks 13, 14 to forming first support beams 15, positioning a second surface of the substrate 11 on the basis of the first pattern on the first surface, forming a second mask 17 having a second pattern on the second surface of the substrate 11 based on the alignment and etching the second surface of the substrate 11 in dry by using the second mask 17 to form the second support beams 20, a membrane member 22a where the first and second support beams 15, 20 are formed on both surfaces of the membrane 12 is manufactured. Consequently, it is possible to provide the membrane member that is sufficient in strength and is hard to be deformed by heat.
摘要翻译：通过形成第一掩模13,14的步骤，每个第一掩模13,14具有在其上将要形成膜的基板11的第一表面上的第一图案，通过使用第一掩模13,14蚀刻基板11的第一表面以形成第一支撑梁15，基于第一图案在第一表面上定位基板11的第二表面，基于对准并蚀刻第二表面，在基板11的第二表面上形成具有第二图案的第二掩模17 通过使用第二掩模17来形成第二支撑梁20的基板11干燥的膜构件22a，其中在膜12的两个表面上形成有第一和第二支撑梁15,20的膜构件22a。因此，可以提供足够强度并且难以被热变形的膜部件。

2. 发明授权

US07862959B2 Transfer mask for exposure and pattern exchanging method of the same 有权
标题翻译：转印掩模的曝光和图案交换方法相同
公开(公告)号：US07862959B2
公开(公告)日：2011-01-04
申请号：US11030963
申请日：2005-01-10
申请人： Katsuya Okumura , Kazuya Nagaseki , Naoyuki Satoh
发明人： Katsuya Okumura , Kazuya Nagaseki , Naoyuki Satoh
IPC分类号： G03F1/00 , G03F7/20
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/20 , G03F1/50 , H01J37/3174 , H01J2237/31788 , H01J2237/31794
摘要： The present invention is a transfer mask for exposure comprising a mask portion having a plurality of cells, each of which an opening of a predetermined pattern is formed in. When one side of the plurality of cells is exposed to a charged particle beam, each of the plurality of cells is adapted to make the charged particle beam pass through itself to the other side thereof based on the pattern of the opening formed in the cell. Thus, when a substrate to be processed is arranged on the other side of the cell, the pattern of the opening formed in the cell is transferred to the substrate to be processed and hence an exposure pattern is formed on the substrate to be processed. The feature of the present invention is that a part of or all the plurality of cells can be exchanged at the mask portion.
摘要翻译：本发明是用于曝光的转印掩模，其包括具有多个单元的掩模部分，每个单元都形成有预定图案的开口。当多个单元的一侧暴露于带电粒子束时，多个单元适于基于形成在单元中的开口的图案使带电粒子束自身通过其自身的另一侧。因此，当待处理基板布置在单元的另一侧时，形成在单元中的开口的图案被转移到待处理的基板，因此在待处理的基板上形成曝光图案。本发明的特征在于，可以在掩模部分更换多个单元的一部分或全部。

3. 发明授权

US07470998B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07470998B2
公开(公告)日：2008-12-30
申请号：US11373154
申请日：2006-03-13
申请人： Katsuya Okumura , Koji Maruyama , Kazuya Nagaseki , Akiteru Rai
发明人： Katsuya Okumura , Koji Maruyama , Kazuya Nagaseki , Akiteru Rai
IPC分类号： H01L23/84 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00 , H01L2924/00012
摘要： The present invention relates to a semiconductor device in which an electrode of a device formed on a substrate such as a semiconductor wafer and an electrode of a wiring structure such as an interposer are connected to each other through a connecting electrode extending through the substrate, and a method of manufacturing the same. A semiconductor device according to the present invention comprises a first substrate including a front surface and a back surface, a first device having a first electrode being formed on the front surface; and a wiring structure formed with a second electrode, the wiring structure having a principal surface. The first electrode of the first device and the second electrode of the wiring structure are connected to each other by a connecting electrode extending through the first substrate from the front surface to the back surface thereof. Substantially all the back surface of the first substrate is bonded to the principal surface of the wiring structure. A dielectric film formed between the first substrate and the wiring structure may be an adhesive layer.
摘要翻译：本发明涉及一种半导体器件，其中形成在诸如半导体晶片的基板上的器件的电极和诸如中介层之类的布线结构的电极通过延伸穿过衬底的连接电极相互连接，其制造方法。根据本发明的半导体器件包括：第一衬底，包括前表面和后表面;第一器件，具有形成在前表面上的第一电极; 以及形成有第二电极的布线结构，所述布线结构具有主表面。第一器件的第一电极和布线结构的第二电极通过从第一衬底的前表面延伸到后表面的连接电极彼此连接。基本上所有的第一基板的所有后表面被结合到布线结构的主表面。形成在第一基板和布线结构之间的电介质膜可以是粘合剂层。

4. 发明申请

US20050087853A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050087853A1
公开(公告)日：2005-04-28
申请号：US10855889
申请日：2004-05-28
申请人： Katsuya Okumura , Koji Maruyama , Kazuya Nagaseki , Akiteru Rai
发明人： Katsuya Okumura , Koji Maruyama , Kazuya Nagaseki , Akiteru Rai
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/768 , H01L23/12 , H01L23/48 , H01L25/065 , H01L25/07 , H01L25/18 , H01L23/02 , H05K7/02
CPC分类号： H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00 , H01L2924/00012
摘要： The present invention relates to a semiconductor device in which an electrode of a device formed on a substrate such as a semiconductor wafer and an electrode of a wiring structure such as an interposer are connected to each other through a connecting electrode extending through the substrate, and a method of manufacturing the same. A semiconductor device according to the present invention comprises a first substrate including a front surface and a back surface, a first device having a first electrode being formed on the front surface; and a wiring structure formed with a second electrode, the wiring structure having a principal surface. The first electrode of the first device and the second electrode of the wiring structure are connected to each other by a connecting electrode extending through the first substrate from the front surface to the back surface thereof. Substantially all the back surface of the first substrate is bonded to the principal surface of the wiring structure. A dielectric film formed between the first substrate and the wiring structure may be an adhesive layer.
摘要翻译：本发明涉及一种半导体器件，其中形成在诸如半导体晶片的基板上的器件的电极和诸如中介层之类的布线结构的电极通过延伸穿过衬底的连接电极相互连接，其制造方法。根据本发明的半导体器件包括：第一衬底，包括前表面和后表面;第一器件，具有形成在前表面上的第一电极; 以及形成有第二电极的布线结构，所述布线结构具有主表面。第一器件的第一电极和布线结构的第二电极通过从第一衬底的前表面延伸到后表面的连接电极彼此连接。基本上所有的第一基板的所有后表面被结合到布线结构的主表面。形成在第一基板和布线结构之间的电介质膜可以是粘合剂层。

5. 发明授权

US07084005B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07084005B2
公开(公告)日：2006-08-01
申请号：US10855889
申请日：2004-05-28
申请人： Katsuya Okumura , Koji Maruyama , Kazuya Nagaseki , Akiteru Rai
发明人： Katsuya Okumura , Koji Maruyama , Kazuya Nagaseki , Akiteru Rai
IPC分类号： H01L21/44 , H01L21/48 , H01L21/50
CPC分类号： H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00 , H01L2924/00012
摘要： The present invention relates to a semiconductor device in which an electrode of a device formed on a substrate such as a semiconductor wafer and an electrode of a wiring structure such as an interposer are connected to each other through a connecting electrode extending through the substrate, and a method of manufacturing the same. A semiconductor device according to the present invention includes a first substrate including a front surface and a back surface, a first device having a first electrode being formed on the front surface; and a wiring structure formed with a second electrode, the wiring structure having a principal surface. The first electrode of the first device and the second electrode of the wiring structure are connected to each other by a connecting electrode extending through the first substrate from the front surface to the back surface thereof. Substantially all the back surface of the first substrate is bonded to the principal surface of the wiring structure. A dielectric film formed between the first substrate and the wiring structure may be an adhesive layer.
摘要翻译：本发明涉及一种半导体器件，其中形成在诸如半导体晶片的基板上的器件的电极和诸如中介层之类的布线结构的电极通过延伸穿过衬底的连接电极相互连接，其制造方法。根据本发明的半导体器件包括：第一衬底，其包括前表面和后表面;第一器件，具有形成在前表面上的第一电极; 以及形成有第二电极的布线结构，所述布线结构具有主表面。第一器件的第一电极和布线结构的第二电极通过从第一衬底的前表面延伸到后表面的连接电极彼此连接。基本上所有的第一基板的所有后表面被结合到布线结构的主表面。形成在第一基板和布线结构之间的电介质膜可以是粘合剂层。

6. 发明授权

US07585386B2 Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method 有权
标题翻译：等离子体处理装置，等离子体处理装置用电极板及电极板的制造方法
公开(公告)号：US07585386B2
公开(公告)日：2009-09-08
申请号：US11195803
申请日：2005-08-03
申请人： Katsuya Okumura , Shinji Himori , Kazuya Nagaseki , Hiroki Matsumaru , Shoichiro Matsuyama , Toshiki Takahashi
发明人： Katsuya Okumura , Shinji Himori , Kazuya Nagaseki , Hiroki Matsumaru , Shoichiro Matsuyama , Toshiki Takahashi
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01L21/3065 , H01J37/32009 , H01J37/32082 , H01J37/32541
摘要： A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.
摘要翻译：用于在目标衬底上执行等离子体处理的等离子体处理装置包括：配置成容纳目标衬底并减少其中的压力的处理容器。第一电极设置在处理容器内。供应系统被配置为将处理气体供应到处理容器中。电场形成系统被配置为在处理容器内形成RF电场，以产生处理气体的等离子体。多个突起离散地设置在第一电极的主表面上，朝向产生等离子体的空间突出。

7. 发明申请

US20090285998A1 PLASMA PROCESSING APPARATUS, ELECTRODE PLATE FOR PLASMA PROCESSING APPARATUS, AND ELECTRODE PLATE MANUFACTURING METHOD 有权
标题翻译：等离子体处理装置，等离子体处理装置的电极板和电极板的制造方法
公开(公告)号：US20090285998A1
公开(公告)日：2009-11-19
申请号：US12505940
申请日：2009-07-20
申请人： Katsuya Okumura , Shinji Himori , Kazuya Nagaseki , Hiroki Matsumaru , Shoichiro Matsuyama , Toshiki Takahashi
发明人： Katsuya Okumura , Shinji Himori , Kazuya Nagaseki , Hiroki Matsumaru , Shoichiro Matsuyama , Toshiki Takahashi
IPC分类号： C23C16/513 , C23C14/24 , C23C16/04 , B05D1/32
CPC分类号： H01L21/3065 , H01J37/32009 , H01J37/32082 , H01J37/32541
摘要： A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.
摘要翻译：用于在目标衬底上执行等离子体处理的等离子体处理装置包括：配置成容纳目标衬底并减少其中的压力的处理容器。第一电极设置在处理容器内。供应系统被配置为将处理气体供应到处理容器中。电场形成系统被配置为在处理容器内形成RF电场，以产生处理气体的等离子体。多个突起离散地设置在第一电极的主表面上，朝向产生等离子体的空间突出。

8. 发明申请

US20050276928A1 Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method 有权
标题翻译：等离子体处理装置，等离子体处理装置用电极板及电极板的制造方法
公开(公告)号：US20050276928A1
公开(公告)日：2005-12-15
申请号：US11195803
申请日：2005-08-03
申请人： Katsuya Okumura , Shinji Himori , Kazuya Nagaseki , Hiroki Matsumaru , Shoichiro Matsuyama , Toshiki Takahashi
发明人： Katsuya Okumura , Shinji Himori , Kazuya Nagaseki , Hiroki Matsumaru , Shoichiro Matsuyama , Toshiki Takahashi
IPC分类号： H05H1/46 , B01J19/08 , C23C14/00 , C23F4/00 , C25D17/10 , H01J37/32 , H01L21/205 , H01L21/3065
CPC分类号： H01L21/3065 , H01J37/32009 , H01J37/32082 , H01J37/32541
摘要： A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.
摘要翻译：用于在目标衬底上执行等离子体处理的等离子体处理装置包括：配置成容纳目标衬底并减少其中的压力的处理容器。第一电极设置在处理容器内。供应系统被配置为将处理气体供应到处理容器中。电场形成系统被配置为在处理容器内形成RF电场，以产生处理气体的等离子体。多个突起离散地设置在第一电极的主表面上，朝向产生等离子体的空间突出。

9. 发明申请

US20050118516A1 Transfer mask for exposure and pattern exchanging method of the same 有权
标题翻译：转印掩模的曝光和图案交换方法相同
公开(公告)号：US20050118516A1
公开(公告)日：2005-06-02
申请号：US11030963
申请日：2005-01-10
申请人： Katsuya Okumura , Kazuya Nagaseki , Naoyuki Satosh
发明人： Katsuya Okumura , Kazuya Nagaseki , Naoyuki Satosh
IPC分类号： G03F1/20 , G03F7/20 , H01J37/317 , H01L21/027 , H01L21/3205 , G03B27/42 , G03C5/00 , G03F9/00 , H01L21/4763
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/20 , G03F1/50 , H01J37/3174 , H01J2237/31788 , H01J2237/31794
摘要： The present invention is a transfer mask for exposure comprising a mask portion having a plurality of cells, each of which an opening of a predetermined pattern is formed in. When one side of the plurality of cells is exposed to a charged particle beam, each of the plurality of cells is adapted to make the charged particle beam pass through itself to the other side thereof based on the pattern of the opening formed in the cell. Thus, when a substrate to be processed is arranged on the other side of the cell, the pattern of the opening formed in the cell is transferred to the substrate to be processed and hence an exposure pattern is formed on the substrate to be processed. The feature of the present invention is that a part of or all the plurality of cells can be exchanged at the mask portion.
摘要翻译：本发明是用于曝光的转印掩模，其包括具有多个单元的掩模部分，每个单元都形成有预定图案的开口。当多个单元的一侧暴露于带电粒子束时，多个单元适于基于形成在单元中的开口的图案使带电粒子束自身通过其自身的另一侧。因此，当待处理基板布置在单元的另一侧时，形成在单元中的开口的图案被转移到待处理的基板，因此在待处理的基板上形成曝光图案。本发明的特征在于，可以在掩模部分更换多个单元的一部分或全部。

10. 发明申请

US20100314356A1 METHOD OF REUSING A CONSUMABLE PART FOR USE IN A PLASMA PROCESSING APPARATUS 有权
标题翻译：在等离子体加工设备中使用消耗部件的方法
公开(公告)号：US20100314356A1
公开(公告)日：2010-12-16
申请号：US12813819
申请日：2010-06-11
申请人： Nobuyuki NAGAYAMA , Naoyuki Satoh , Keiichi Nagakubo , Kazuya Nagaseki
发明人： Nobuyuki NAGAYAMA , Naoyuki Satoh , Keiichi Nagakubo , Kazuya Nagaseki
IPC分类号： B44C1/22
CPC分类号： H01L21/465 , C23C16/0227 , C23C16/325 , C23C16/4418 , H01J37/32467 , H01J37/32862
摘要： In a method of reusing a consumable part for use in a plasma processing apparatus, a silicon carbide (SiC) lump is formed by depositing SiC by chemical vapor deposition (CVD), and a consumable part for the plasma processing apparatus is manufactured by processing the SiC lump, the consumable part having a predetermined shape. A first plasma process is performed on a substrate by using the manufactured consumable part. A surface of the consumable part that has been eroded by the plasma process is subjected to a clean process for a specific period of time. SiC is deposited on the cleaned surface of the eroded consumable part by CVD. A consumable part having the predetermined shape is remanufactured by processing the eroded consumable part having the surface on which the SiC is deposited. A second plasma process is performed on a substrate by using the remanufactured consumable part.
摘要翻译：在重新使用等离子体处理装置中的消耗部件的方法中，通过化学气相沉积（CVD）沉积SiC形成碳化硅（SiC）块，并且通过将等离子体处理装置的消耗部件 SiC块，该消耗部件具有预定的形状。通过使用制造的消耗部件在基板上进行第一等离子体处理。已经被等离子体处理侵蚀的可消耗部件的表面经过一段干净的处理一段时间。通过CVD将SiC沉积在被腐蚀的消耗部件的清洁表面上。具有预定形状的消耗部件通过处理具有沉积SiC的表面的侵蚀的消耗部件来再制造。通过使用再制造的消耗部件在基板上进行第二等离子体处理。

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