专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4818728A Method of making a hybrid semiconductor device 失效
标题翻译：制造混合半导体器件的方法
公开(公告)号：US4818728A
公开(公告)日：1989-04-04
申请号：US128437
申请日：1987-12-03
申请人： Akiteru Rai , Keiji Yamamura , Takashi Nukii
发明人： Akiteru Rai , Keiji Yamamura , Takashi Nukii
IPC分类号： H01L25/18 , H01L21/98 , H01L23/485 , H01L25/065 , H01L25/07 , H01L27/00 , H01L21/60 , H01L21/58
CPC分类号： H01L24/10 , H01L24/13 , H01L25/0657 , H01L25/50 , H01L2224/13 , H01L2224/13021 , H01L2224/13099 , H01L2224/16147 , H01L2224/16237 , H01L2224/73104 , H01L2225/06513 , H01L2225/06593 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , Y10T29/49126 , Y10T29/53174
摘要： A method for making a semiconductor device of a type comprising at least first and second semiconductor circuit units, which method comprises the step of forming a plurality of connecting electrodes on an upper surface of each of at least first and second semiconductor substrates; forming an electrically insulating layer entirely over the upper surface of each of the first and second substrates so as to cover the respective connecting electrodes; partially removing the insulating layer on each of the first and second substrates to permit the respective electrodes to be exposed to the outside; forming metal studs on the first substrate in contact with the electrodes so as to protrude outwardly of the respective insulating layer to complete the first semiconductor unit and forming solder deposits on the second substrate in contact with the respective electrodes on such second substrate to complete the second semiconductor unit; combining the first and second semiconductor units with the metal studs in the first semiconductor unit aligned respectively with the solder deposits in the second semiconductor unit; and heating the resultant assembly to allow the solder deposits to be melted with the associated metal studs consequently immersed into the melted solder deposits thereby to accomplish a firm interlock between the electrodes on the first and second substrates.
摘要翻译：一种用于制造至少包括第一和第二半导体电路单元的类型的半导体器件的方法，所述方法包括在至少第一和第二半导体衬底中的每一个的上表面上形成多个连接电极的步骤; 在所述第一和第二基板中的每一个的上表面上整体形成电绝缘层，以便覆盖相应的连接电极; 部分地去除第一和第二基板中的每一个上的绝缘层，以允许各个电极暴露于外部; 在所述第一基板上形成与所述电极接触的金属螺柱，以便从所述绝缘层向外突出以完成所述第一半导体单元并且在所述第二基板上形成与所述第二基板上的相应电极接触的焊料沉积物，以完成所述第二半导体单元半导体单元; 将第一和第二半导体单元与分别与第二半导体单元中的焊料沉积物对准的第一半导体单元中的金属柱头组合; 并加热所得到的组件以允许焊料沉积物与相关联的金属螺柱熔化，从而浸入熔融的焊料沉积物中，从而在第一和第二基板上的电极之间实现牢固的互锁。

2. 发明授权

US4766085A Method of manufacturing contact type one-dimensional image sensor 失效
标题翻译：制造接触式一维图像传感器的方法
公开(公告)号：US4766085A
公开(公告)日：1988-08-23
申请号：US894051
申请日：1986-08-07
申请人： Satoshi Nishigaki , Ryusuke Kita , Shuhei Tsuchimoto , Akiteru Rai , Masaru Iwasaki , Yuzi Matsuda , Takashi Nukii
发明人： Satoshi Nishigaki , Ryusuke Kita , Shuhei Tsuchimoto , Akiteru Rai , Masaru Iwasaki , Yuzi Matsuda , Takashi Nukii
IPC分类号： H01L27/146 , H04N1/193 , H01L31/04
CPC分类号： H01L27/14665 , H01L27/14678 , H01L27/14696 , H04N1/1931
摘要： A method for manufacturing a contact type one-dimensional image sensor, which includes the step of providing a light receiving element portion composed of one or more of Group II-VI compounds semiconductor containing Cd on a substrate, and also providing a matrix wiring portion on the same substrate as that of the light receiving element portion, and the method is characterized by the step of forming an insulating layer for the formation of the matrix wiring portion in such a manner as to cover the light receiving element portion.
摘要翻译：一种接触型一维图像传感器的制造方法，其包括在基板上设置由含有Cd的II-VI族化合物半导体中的一种以上构成的受光元件部，以及在基板上设置矩阵布线部的步骤与光接收元件部分相同的基板，其特征在于以覆盖光接收元件部分的方式形成用于形成矩阵布线部分的绝缘层的步骤。

3. 发明申请

US20060154473A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060154473A1
公开(公告)日：2006-07-13
申请号：US11373154
申请日：2006-03-13
申请人： Katsuya Okumura , Koji Maruyama , Kazuyu Nagaseki , Akiteru Rai
发明人： Katsuya Okumura , Koji Maruyama , Kazuyu Nagaseki , Akiteru Rai
IPC分类号： H01L21/4763
CPC分类号： H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00 , H01L2924/00012
摘要： The present invention relates to a semiconductor device in which an electrode of a device formed on a substrate such as a semiconductor wafer and an electrode of a wiring structure such as an interposer are connected to each other through a connecting electrode extending through the substrate, and a method of manufacturing the same. A semiconductor device according to the present invention comprises a first substrate including a front surface and a back surface, a first device having a first electrode being formed on the front surface; and a wiring structure formed with a second electrode, the wiring structure having a principal surface. The first electrode of the first device and the second electrode of the wiring structure are connected to each other by a connecting electrode extending through the first substrate from the front surface to the back surface thereof. Substantially all the back surface of the first substrate is bonded to the principal surface of the wiring structure. A dielectric film formed between the first substrate and the wiring structure may be an adhesive layer.
摘要翻译：本发明涉及一种半导体器件，其中形成在诸如半导体晶片的基板上的器件的电极和诸如中介层之类的布线结构的电极通过延伸穿过衬底的连接电极相互连接，其制造方法。根据本发明的半导体器件包括：第一衬底，包括前表面和后表面;第一器件，具有形成在前表面上的第一电极; 以及形成有第二电极的布线结构，所述布线结构具有主表面。第一器件的第一电极和布线结构的第二电极通过从第一衬底的前表面延伸到后表面的连接电极彼此连接。基本上所有的第一基板的所有后表面被结合到布线结构的主表面。形成在第一基板和布线结构之间的电介质膜可以是粘合剂层。

4. 发明授权

US5397864A Wiring board and a method for producing the same 失效
标题翻译：接线板及其制造方法
公开(公告)号：US5397864A
公开(公告)日：1995-03-14
申请号：US978235
申请日：1992-11-18
申请人： Akiteru Rai , Keiji Yamamura
发明人： Akiteru Rai , Keiji Yamamura
IPC分类号： H01L21/60 , H01L21/48 , H01L21/58 , H01L23/498 , H05K3/34 , H05K1/00
CPC分类号： H01L24/83 , H01L21/4853 , H01L23/49838 , H01L23/49894 , H01L24/17 , H01L24/29 , H05K3/3452 , H01L2224/16225 , H01L2224/2919 , H01L2224/32225 , H01L2224/73204 , H01L2224/8319 , H01L2224/8385 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H05K2201/0989 , H05K2201/10674 , H05K2201/10734 , H05K3/3431
摘要： A wiring board including a plate; at least one conductive strip provided on the plate, the conductive strip having a specified connection position; and an electrically insulating film covering the conductive strip and having a slit extending in a direction crossing the longitudinal direction of the conductive strip. A tip of the conductive strip in the vicinity of the connection position has a distance from the connection position in a longitudinal direction of the conductive strip. The slit is formed at a position corresponding to the connection position.
摘要翻译：包括板的布线板; 设置在所述板上的至少一个导电条，所述导电条具有指定的连接位置; 以及覆盖导电带并具有沿与导电带的纵向交叉的方向延伸的狭缝的电绝缘膜。在连接位置附近的导电带的末端与导电带的纵向方向上的连接位置有一段距离。狭缝形成在与连接位置对应的位置。

5. 发明申请

US20110108979A1 SEMICONDUCTOR DEVICE AND DISPLAY APPARATUS 有权
标题翻译：半导体器件和显示器
公开(公告)号：US20110108979A1
公开(公告)日：2011-05-12
申请号：US12737431
申请日：2009-07-07
申请人： Tomokatsu Nakagawa , Yasunori Chikawa , Akiteru Rai , Tatsuya Katoh , Takuya Sugiyama
发明人： Tomokatsu Nakagawa , Yasunori Chikawa , Akiteru Rai , Tatsuya Katoh , Takuya Sugiyama
IPC分类号： H01L23/34
CPC分类号： H01L23/4985 , G02F1/13452 , H01L23/367 , H01L23/3735 , H01L24/81 , H01L2224/73204 , H01L2224/75252 , H01L2224/81203 , H01L2224/83862 , H01L2224/92125 , H01L2924/01004 , H01L2924/01019 , H01L2924/01078 , H01L2924/12044 , H01L2924/3511
摘要： In a COF of an embodiment of the present invention, the smaller distance to edges of a heat-releasing member an area of the heat-releasing member has, the larger openings the area has. Accordingly, a volume per area (an area per length) of the heat-releasing member decreases toward the edges. The arrangement improves flexibility of the COF. This prevents a stress caused by bending the COF from concentrating at the edges. This makes it possible to prevent a line on an insulating film from being broken. Also, it becomes possible to prevent an anisotropic conductive resin from coming off which is used to bond the COF with a display panel in providing the COF in a display apparatus.
摘要翻译：在本发明的实施例的COF中，散热构件的散热构件的边缘的距离越小，散热构件的区域具有该区域越大的开口。因此，散热构件的面积（每个长度的面积）的面积朝向边缘减小。该安排提高了COF的灵活性。这防止了由于COF弯曲而引起的应力集中在边缘。这使得可以防止绝缘膜上的线被破坏。此外，可以防止在显示装置中提供COF时用于将COF与显示面板结合的各向异性导电树脂脱落。

6. 发明授权

US07084005B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07084005B2
公开(公告)日：2006-08-01
申请号：US10855889
申请日：2004-05-28
申请人： Katsuya Okumura , Koji Maruyama , Kazuya Nagaseki , Akiteru Rai
发明人： Katsuya Okumura , Koji Maruyama , Kazuya Nagaseki , Akiteru Rai
IPC分类号： H01L21/44 , H01L21/48 , H01L21/50
CPC分类号： H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00 , H01L2924/00012
摘要： The present invention relates to a semiconductor device in which an electrode of a device formed on a substrate such as a semiconductor wafer and an electrode of a wiring structure such as an interposer are connected to each other through a connecting electrode extending through the substrate, and a method of manufacturing the same. A semiconductor device according to the present invention includes a first substrate including a front surface and a back surface, a first device having a first electrode being formed on the front surface; and a wiring structure formed with a second electrode, the wiring structure having a principal surface. The first electrode of the first device and the second electrode of the wiring structure are connected to each other by a connecting electrode extending through the first substrate from the front surface to the back surface thereof. Substantially all the back surface of the first substrate is bonded to the principal surface of the wiring structure. A dielectric film formed between the first substrate and the wiring structure may be an adhesive layer.
摘要翻译：本发明涉及一种半导体器件，其中形成在诸如半导体晶片的基板上的器件的电极和诸如中介层之类的布线结构的电极通过延伸穿过衬底的连接电极相互连接，其制造方法。根据本发明的半导体器件包括：第一衬底，其包括前表面和后表面;第一器件，具有形成在前表面上的第一电极; 以及形成有第二电极的布线结构，所述布线结构具有主表面。第一器件的第一电极和布线结构的第二电极通过从第一衬底的前表面延伸到后表面的连接电极彼此连接。基本上所有的第一基板的所有后表面被结合到布线结构的主表面。形成在第一基板和布线结构之间的电介质膜可以是粘合剂层。

7. 发明授权

US5447886A Method for mounting semiconductor chip on circuit board 失效
标题翻译：将半导体芯片安装在电路板上的方法
公开(公告)号：US5447886A
公开(公告)日：1995-09-05
申请号：US191923
申请日：1994-02-04
申请人： Akiteru Rai
发明人： Akiteru Rai
IPC分类号： H01L21/60 , H05K3/34 , H01L21/44
CPC分类号： H01L24/81 , H01L2224/16 , H01L2224/81801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/09701 , H05K3/3431
摘要： In mounting a semiconductor chip on a circuit board by a flip chip bonding method, an improved mounting method holds the circuit with a warp prevention device, on which the semiconductor chip is placed, while the circuit board is treated with heat for the reflow of the solder bumps. As a result, the circuit board is prevented from warping when heated at a temperature at which the solder bumps melt.
摘要翻译：在通过倒装芯片接合方法将半导体芯片安装在电路板上的情况下，改进的安装方法将电路保持在其上放置有半导体芯片的翘曲防止装置，同时电路板被热处理用于回流焊锡凸块结果，当在焊料凸点熔化的温度下加热时，防止电路板翘曲。

8. 发明授权

US08344486B2 Semiconductor device and display apparatus 有权
标题翻译：半导体装置及显示装置
公开(公告)号：US08344486B2
公开(公告)日：2013-01-01
申请号：US12737431
申请日：2009-07-07
申请人： Tomokatsu Nakagawa , Yasunori Chikawa , Akiteru Rai , Tatsuya Katoh , Takuya Sugiyama
发明人： Tomokatsu Nakagawa , Yasunori Chikawa , Akiteru Rai , Tatsuya Katoh , Takuya Sugiyama
IPC分类号： H01L23/495
CPC分类号： H01L23/4985 , G02F1/13452 , H01L23/367 , H01L23/3735 , H01L24/81 , H01L2224/73204 , H01L2224/75252 , H01L2224/81203 , H01L2224/83862 , H01L2224/92125 , H01L2924/01004 , H01L2924/01019 , H01L2924/01078 , H01L2924/12044 , H01L2924/3511
摘要： In a COF of an embodiment of the present invention, the smaller distance to edges of a heat-releasing member an area of the heat-releasing member has, the larger openings the area has. Accordingly, a volume per area (an area per length) of the heat-releasing member decreases toward the edges. The arrangement improves flexibility of the COF. This prevents a stress caused by bending the COF from concentrating at the edges. This makes it possible to prevent a line on an insulating film from being broken. Also, it becomes possible to prevent an anisotropic conductive resin from coming off which is used to bond the COF with a display panel in providing the COF in a display apparatus.
摘要翻译：在本发明的实施例的COF中，散热构件的散热构件的边缘的距离越小，散热构件的区域具有该区域越大的开口。因此，散热构件的面积（每个长度的面积）的面积朝向边缘减小。该安排提高了COF的灵活性。这防止了由于COF弯曲而引起的应力集中在边缘。这使得可以防止绝缘膜上的线被破坏。此外，可以防止在显示装置中提供COF时用于将COF与显示面板结合的各向异性导电树脂脱落。

9. 发明授权

US07470998B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07470998B2
公开(公告)日：2008-12-30
申请号：US11373154
申请日：2006-03-13
申请人： Katsuya Okumura , Koji Maruyama , Kazuya Nagaseki , Akiteru Rai
发明人： Katsuya Okumura , Koji Maruyama , Kazuya Nagaseki , Akiteru Rai
IPC分类号： H01L23/84 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00 , H01L2924/00012
摘要： The present invention relates to a semiconductor device in which an electrode of a device formed on a substrate such as a semiconductor wafer and an electrode of a wiring structure such as an interposer are connected to each other through a connecting electrode extending through the substrate, and a method of manufacturing the same. A semiconductor device according to the present invention comprises a first substrate including a front surface and a back surface, a first device having a first electrode being formed on the front surface; and a wiring structure formed with a second electrode, the wiring structure having a principal surface. The first electrode of the first device and the second electrode of the wiring structure are connected to each other by a connecting electrode extending through the first substrate from the front surface to the back surface thereof. Substantially all the back surface of the first substrate is bonded to the principal surface of the wiring structure. A dielectric film formed between the first substrate and the wiring structure may be an adhesive layer.
摘要翻译：本发明涉及一种半导体器件，其中形成在诸如半导体晶片的基板上的器件的电极和诸如中介层之类的布线结构的电极通过延伸穿过衬底的连接电极相互连接，其制造方法。根据本发明的半导体器件包括：第一衬底，包括前表面和后表面;第一器件，具有形成在前表面上的第一电极; 以及形成有第二电极的布线结构，所述布线结构具有主表面。第一器件的第一电极和布线结构的第二电极通过从第一衬底的前表面延伸到后表面的连接电极彼此连接。基本上所有的第一基板的所有后表面被结合到布线结构的主表面。形成在第一基板和布线结构之间的电介质膜可以是粘合剂层。

10. 发明申请

US20050087853A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050087853A1
公开(公告)日：2005-04-28
申请号：US10855889
申请日：2004-05-28
申请人： Katsuya Okumura , Koji Maruyama , Kazuya Nagaseki , Akiteru Rai
发明人： Katsuya Okumura , Koji Maruyama , Kazuya Nagaseki , Akiteru Rai
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/768 , H01L23/12 , H01L23/48 , H01L25/065 , H01L25/07 , H01L25/18 , H01L23/02 , H05K7/02
CPC分类号： H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00 , H01L2924/00012
摘要： The present invention relates to a semiconductor device in which an electrode of a device formed on a substrate such as a semiconductor wafer and an electrode of a wiring structure such as an interposer are connected to each other through a connecting electrode extending through the substrate, and a method of manufacturing the same. A semiconductor device according to the present invention comprises a first substrate including a front surface and a back surface, a first device having a first electrode being formed on the front surface; and a wiring structure formed with a second electrode, the wiring structure having a principal surface. The first electrode of the first device and the second electrode of the wiring structure are connected to each other by a connecting electrode extending through the first substrate from the front surface to the back surface thereof. Substantially all the back surface of the first substrate is bonded to the principal surface of the wiring structure. A dielectric film formed between the first substrate and the wiring structure may be an adhesive layer.
摘要翻译：本发明涉及一种半导体器件，其中形成在诸如半导体晶片的基板上的器件的电极和诸如中介层之类的布线结构的电极通过延伸穿过衬底的连接电极相互连接，其制造方法。根据本发明的半导体器件包括：第一衬底，包括前表面和后表面;第一器件，具有形成在前表面上的第一电极; 以及形成有第二电极的布线结构，所述布线结构具有主表面。第一器件的第一电极和布线结构的第二电极通过从第一衬底的前表面延伸到后表面的连接电极彼此连接。基本上所有的第一基板的所有后表面被结合到布线结构的主表面。形成在第一基板和布线结构之间的电介质膜可以是粘合剂层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式