专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明授权

US4770923A Protection film structure for functional devices 失效
标题翻译：功能器件保护膜结构
公开(公告)号：US4770923A
公开(公告)日：1988-09-13
申请号：US800042
申请日：1985-11-20
申请人： Kiyotaka Wasa , Takashi Hirao , Atsuo Nishikawa , Seiji Nishino , Takeo Ohta
发明人： Kiyotaka Wasa , Takashi Hirao , Atsuo Nishikawa , Seiji Nishino , Takeo Ohta
IPC分类号： H01L21/314 , G11B5/72 , G11B7/24 , H01L23/29 , H01L23/31 , B05D3/06 , B32B9/00
CPC分类号： H01L23/3157 , G11B5/72 , G11B7/2403 , H01L23/291 , H01L2924/0002 , H01L2924/09701 , Y10T428/24942 , Y10T428/31576 , Y10T428/31601 , Y10T428/31605
摘要： An inorganic protection film (12) such as of silicon nitride for protecting humidity-sensitive functional devices (16) on the substrate from water molecules (15) is formed on an organic substrate (11) such as one made of polycarbonate plastic material, with a soft buffer interface film (13) between the substrate and the protection film, and the buffer film releases stress due to the difference of thermal expansion coefficients of the organic substrate and the protection film.
摘要翻译：在诸如由聚碳酸酯塑料材料制成的有机基材（11）上形成诸如氮化硅的无机保护膜（12），其用于在水分子（15）上保护基底上的湿敏功能元件（16）在衬底和保护膜之间的软缓冲界面膜（13），并且缓冲膜由于有机衬底和保护膜的热膨胀系数的差异而释放应力。

42. 发明授权

US4624045A Method of making thin film device 失效
标题翻译：制造薄膜器件的方法
公开(公告)号：US4624045A
公开(公告)日：1986-11-25
申请号：US716604
申请日：1985-03-27
申请人： Shinichiro Ishihara , Takashi Hirao , Koshiro Mori , Masaharu Ono , Masatoshi Kitagawa
发明人： Shinichiro Ishihara , Takashi Hirao , Koshiro Mori , Masaharu Ono , Masatoshi Kitagawa
IPC分类号： H01L31/042 , H01L23/535 , H01L27/142 , H01L31/0224 , H01L31/04 , H01L31/20 , H01L31/18 , H01L27/14
CPC分类号： H01L31/022425 , H01L23/535 , H01L31/046 , H01L31/0465 , H01L31/202 , H01L2924/0002 , Y02E10/50 , Y02P70/521
摘要： A thin film device such as an amorphous thin film solar battery is easily made with high integration by use of metal-diffused regions in the thin film as an electrical connection region across the thickness of the thin film. By use of such metal-diffused regions 24, 24 . . . for connection between transparent stripe shaped electrodes 21', 21'. . . disposed between glass substrate 20 and amorphous silicon thin film 23 and stripe shaped metal electrodes 25, 25 . . . on the top surface of the thin film 23, series connected solar battery cells can be made with a small number of process steps.
摘要翻译：诸如非晶薄膜太阳能电池的薄膜器件通过在薄膜中的金属扩散区域作为跨越薄膜厚度的电连接区域的高集成度容易地制成。通过使用这种金属扩散区域24,24。。。用于透明条状电极21'，21'之间的连接。。。设置在玻璃基板20和非晶硅薄膜23之间以及条状金属电极25,25之间。。。在薄膜23的上表面上，串联的太阳能电池单元可以用少量的工艺步骤制成。

43. 发明授权

US4492605A Method of making photovoltaic device 失效
标题翻译：制造光伏器件的方法
公开(公告)号：US4492605A
公开(公告)日：1985-01-08
申请号：US476707
申请日：1983-03-18
申请人： Shin-ichiro Ishihara , Takashi Hirao , Koshiro Mori , Motonori Mochizuki
发明人： Shin-ichiro Ishihara , Takashi Hirao , Koshiro Mori , Motonori Mochizuki
IPC分类号： H01L31/04 , C23C16/54 , H01L21/205 , H01L31/20 , C23C13/10 , H01L31/18
CPC分类号： H01L31/206 , C23C16/54 , Y02E10/50 , Y02P70/521
摘要： A method for making photovoltaic device comprising the steps of moving at least one substrate into a reaction chamber, causing a plasma reaction of raw material gases in said reaction chamber, thereby forming an amorphous silicon layer of a first conductivity type on said substrate, moving said at least one substrate into a next reaction chamber for a next plasma reaction, causing said next plasma reaction of next raw material gases in said reaction chamber, thereby forming a second amorphous silicon layer of a second conductivity type on said layer of the first conductivity type, the improvement being in after finishing said forming of said an amorphous silicon layer of a first conductivity type, changing the gas atmosphere of said reaction chamber into a different atmosphere which is substantially identical and of equal pressure to the next gas atmosphere of said next reaction chamber, and thereafter moving said substrate to said next reaction chamber.
摘要翻译：一种制造光伏器件的方法，包括以下步骤：将至少一个衬底移动到反应室中，引起原料气体在所述反应室中的等离子体反应，由此在所述衬底上形成第一导电类型的非晶硅层，使所述至少一个衬底进入下一个等离子体反应的下一个反应室，引起所述反应室中下一个原料气体的下一个等离子体反应，从而在第一导电类型的所述层上形成第二导电类型的第二非晶硅层改进在完成所述第一导电类型的非晶硅层的所述形成之后，将所述反应室的气体气氛改变成与所述下一个反应的下一个气体气氛基本相同且等压的不同气氛然后将所述衬底移动到所述下一个反应室。

44. 发明授权

US07977169B2 Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof 有权
标题翻译：包括由受控取向的氧化锌制成的活性层的半导体装置及其制造方法
公开(公告)号：US07977169B2
公开(公告)日：2011-07-12
申请号：US11704838
申请日：2007-02-09
申请人： Takashi Hirao , Mamoru Furuta , Hiroshi Furuta , Tokiyoshi Matsuda , Takahiro Hiramatsu
发明人： Takashi Hirao , Mamoru Furuta , Hiroshi Furuta , Tokiyoshi Matsuda , Takahiro Hiramatsu
IPC分类号： H01L21/00
CPC分类号： H01L21/02422 , H01L21/02491 , H01L21/02494 , H01L21/02554 , H01L21/02595 , H01L21/02609 , H01L21/02631 , H01L29/04 , H01L29/045 , H01L29/4908 , H01L29/7869 , H01L29/78693
摘要： A semiconductor device includes an oxide semiconductor thin film layer primarily including zinc oxide having at least one orientation other than (002) orientation. The zinc oxide may have a mixed orientation including (002) orientation and (101) orientation. Alternatively, the zinc oxide may have a mixed orientation including (100) orientation and (101) orientation.
摘要翻译：半导体器件包括氧化物半导体薄膜层，其主要包括具有除（002）取向之外的至少一个取向的氧化锌。氧化锌可以具有包括（002）取向和（101）取向的混合取向。或者，氧化锌可以具有包括（100）取向和（101）取向的混合取向。

45. 发明申请

US20070048779A1 Method for detecting target plant genus 有权
标题翻译：检测目标植物属的方法
公开(公告)号：US20070048779A1
公开(公告)日：2007-03-01
申请号：US11581872
申请日：2006-10-17
申请人： Takashi Hirao , Masayuki Hiramoto
发明人： Takashi Hirao , Masayuki Hiramoto
IPC分类号： C12Q1/68 , C12P19/34
CPC分类号： C12Q1/6895
摘要： A method for detecting species in a target plant genus comprises the steps of conducting PCR using at least one member selected from the group consisting of primers (A) and (B), which can hybridize under stringent conditions to a nucleic acid molecule having a common nucleotide sequence for all species in the target plant genus in 45S rRNA precursor gene sequence thereof, wherein 3′ end of primer (A) can complementarily bind to a base in ITS-1 sequence of the target plant genus when the primer hybridizes to the nucleic acid molecule while 3′ end of primer (B) can complementarily bind to a base in ITS-2 sequence of the target plant genus when the primer hybridizes to the nucleic acid molecule, and identifying the presence of the resulting amplification product from PCR containing at least a part of ITS-1 or ITS-2 sequence of the target plant genus. The method for detecting species in a target plant genus, particularly an allergenic plant genus such as the genus Fagopyrum, can make it possible to detect with high sensitivity, for example, about 1 ppm of the plant(s) in cases where the plant(s) is contained in a food ingredient or food product.
摘要翻译：一种用于检测目标植物属物种的方法，包括以下步骤：使用选自引物（A）和（B）中的至少一种成员进行PCR，其可在严格条件下与具有共同的核酸分子杂交在45S rRNA前体基因序列中的目标植物属中的所有物种的核苷酸序列，其中引物（A）的3'末端可以在引物与核酸杂交时与靶植物属的ITS-1序列中的碱基互补结合酸分子，而当引物与核酸分子杂交时，引物（B）的3'末端可以与靶植物属的ITS-2序列中的碱基互补结合，并且从PCR中鉴定所得扩增产物的存在，目标植物属的ITS-1或ITS-2序列的至少一部分。用于检测目标植物属，特别是变应原植物属（如禾本科）的物种的方法可以使得可以以高灵敏度检测例如约1ppm的植物（例如植物（ s）包含在食品成分或食品中。

46. 发明授权

US07144702B2 Method for detecting target plant genus 有权
标题翻译：检测目标植物属的方法
公开(公告)号：US07144702B2
公开(公告)日：2006-12-05
申请号：US10285061
申请日：2002-10-31
申请人： Takashi Hirao , Masayuki Hiramoto
发明人： Takashi Hirao , Masayuki Hiramoto
IPC分类号： C12Q1/68 , C12P19/34
CPC分类号： C12Q1/6895
摘要： A method for detecting species in a target plant genus comprises the steps of conducting PCR using at least one member selected from the group consisting of primers (A) and (B), which can hybridize under stringent conditions to a nucleic acid molecule having a common nucleotide sequence for all species in the target plant genus in 45S rRNA precursor gene sequence thereof, wherein 3′ end of primer (A) can complementarily bind to a base in ITS-1 sequence of the target plant genus when the primer hybridizes to the nucleic acid molecule while 3′ end of primer (B) can complementarily bind to a base in ITS-2 sequence of the target plant genus when the primer hybridizes to the nucleic acid molecule, and identifying the presence of the resulting amplification product from PCR containing at least a part of ITS-1 or ITS-2 sequence of the target plant genus.The method for detecting species in a target plant genus, particularly an allergenic plant genus such as the genus Fagopyrum, can make it possible to detect with high sensitivity, for example, about 1 ppm of the plant(s) in cases where the plant(s) is contained in a food ingredient or food product.
摘要翻译：一种用于检测目标植物属物种的方法，包括以下步骤：使用选自引物（A）和（B）中的至少一种成员进行PCR，其可在严格条件下与具有共同的核酸分子杂交在45S rRNA前体基因序列中的目标植物属中的所有物种的核苷酸序列，其中引物（A）的3'末端可以在引物与核酸杂交时与靶植物属的ITS-1序列中的碱基互补结合酸分子，而当引物与核酸分子杂交时，引物（B）的3'末端可以与靶植物属的ITS-2序列中的碱基互补结合，并且从PCR中鉴定所得扩增产物的存在，目标植物属的ITS-1或ITS-2序列的至少一部分。用于检测目标植物属，特别是变应原植物属（如禾本科）的物种的方法可以使得可以以高灵敏度检测例如约1ppm的植物（例如植物（ s）包含在食品成分或食品中。

47. 发明授权

US6127211A Method of manufacturing transistor 有权
标题翻译：制造晶体管的方法
公开(公告)号：US6127211A
公开(公告)日：2000-10-03
申请号：US162450
申请日：1998-09-29
申请人： Takashi Hirao , Akihisa Yoshida , Toru Fukumoto , Kazuyasu Adachi
发明人： Takashi Hirao , Akihisa Yoshida , Toru Fukumoto , Kazuyasu Adachi
IPC分类号： H01L21/18 , H01L21/336 , H01L21/84 , H01L29/786
CPC分类号： H01L29/78621
摘要： In a method of manufacturing a semiconductor device having an LDD structure, source gases for generating plural types of impurity ions exhibiting different molecular weights and different projected ranges in a target during impurity implantation are supplied to a plasma space, ionized, accelerated with a voltage, and implanted in a semiconductor region on the target substrate. In the case of manufacturing a top-gate transistor, a gate electrode on the semiconductor region has a sufficient thickness to serve as a mask. In the case of manufacturing a bottom-gate transistor, a mask and a resistor are used. An implantation angle is set to an optimum value as desired. Thereafter, the impurity is activated as desired. Thus, the semiconductor device having the LDD structure is manufactured by a single step of impurity implantation.
摘要翻译：在制造具有LDD结构的半导体器件的方法中，在杂质注入期间在靶中产生表现出不同分子量和不同投影范围的多种杂质离子的源气体被提供给等离子体空间，电离电压加速，并注入目标衬底上的半导体区域。在制造顶栅晶体管的情况下，半导体区域上的栅电极具有足够的厚度用作掩模。在制造底栅晶体管的情况下，使用掩模和电阻器。根据需要将植入角度设定为最佳值。此后，根据需要激活杂质。因此，具有LDD结构的半导体器件通过杂质注入的一个步骤来制造。

48. 发明授权

US5814194A Substrate surface treatment method 失效
标题翻译：基材表面处理方法
公开(公告)号：US5814194A
公开(公告)日：1998-09-29
申请号：US542008
申请日：1995-10-12
申请人： Masahiro Deguchi , Akihisa Yoshida , Makoto Kitabatake , Takashi Hirao
发明人： Masahiro Deguchi , Akihisa Yoshida , Makoto Kitabatake , Takashi Hirao
IPC分类号： C30B33/00 , C30B33/12
CPC分类号： C30B33/00 , C30B29/04 , H01J2237/0812 , Y10T428/24355 , Y10T428/24479 , Y10T428/30
摘要： Cluster particles including a plurality of molecules or atoms are prepared by a gas cluster method, are accelerated, and are then irradiated onto a diamond in a low pressure atmosphere, so that the unevenness surfaces of the diamond are smoothed with no damages in the diamond. The cluster particles are prepared by the steps of forming, ionizing, mass-separating, and accelerating cluster particles. The cluster particles with a certain energy are irradiated onto the surface of the diamond. Irradiated cluster particles collide with the surface of the diamond, and then break apart into each molecule or atom while changing momentum (direction and speed) or energy. Thus, the surface of the diamond is efficiently smoothed and etched.
摘要翻译：包含多个分子或原子的簇粒子通过气体簇法制备，被加速，然后在低压气氛中照射到金刚石上，使得金刚石的不平坦表面在金刚石中没有损坏的情况下被平滑化。通过形成，离子化，质量分离和加速簇粒子的步骤制备簇粒子。具有一定能量的簇粒子被照射到金刚石的表面上。辐照的簇粒子与金刚石的表面碰撞，然后在改变动量（方向和速度）或能量的同时分解成每个分子或原子。因此，金刚石的表面被有效地平滑和蚀刻。

49. 发明授权

US5674366A Method and apparatus for fabrication of dielectric thin film 失效
标题翻译：电介质薄膜的制造方法和装置
公开(公告)号：US5674366A
公开(公告)日：1997-10-07
申请号：US483873
申请日：1995-06-07
申请人： Shigenori Hayashi , Kazuki Komaki , Takeshi Kamada , Masatoshi Kitagawa , Takashi Deguchi , Ryoichi Takayama , Takashi Hirao
发明人： Shigenori Hayashi , Kazuki Komaki , Takeshi Kamada , Masatoshi Kitagawa , Takashi Deguchi , Ryoichi Takayama , Takashi Hirao
IPC分类号： C23C14/00 , C23C14/08 , C23C14/58 , G02F1/00 , H01L21/314 , H01L21/316 , H01L37/02 , H01L41/316 , C23C14/34
CPC分类号： C23C14/5853 , C23C14/0078 , C23C14/088 , H01L21/02197 , H01L21/02266 , H01L21/314 , H01L21/31691 , H01L37/025 , H01L41/1875 , H01L41/316 , G02F1/0027
摘要： A method whereby perovskite type oxide dielectric thin films with ABO.sub.3 structure are able to be formed with such features as good stability, uniformity, reproducibility, or the like, with high through-put by having a deposition process, wherein the thin films are deposited on a substrate, and a stabilization process, where no deposition of the thin films takes place, repeated alternatingly while the substrate temperature being kept near the temperature at which perovskite type oxide dielectric thin films are formed. Also, by employing (i) a processing method wherein a decomposing excitation of a reactive gas due to plasma takes place on or near the deposition surface in a gaseous atmosphere comprising a gas that reacts with the elements composing the thin films, (ii) a processing method wherein an oxidation reaction takes place on the deposition surface in a gaseous atmosphere comprising at least ozone (O.sub.3), and (iii) a processing method wherein light of short wave length is irradiated on the deposition surface in a gaseous atmosphere comprising at least reactive elements in the non-deposition process, the oxygen concentration in the deposited thin films is adjusted and dielectric thin films of good quality and an extremely low defect content are realized.
摘要翻译：具有ABO3结构的钙钛矿型氧化物电介质薄膜能够通过具有沉积工艺的高通量形成具有良好的稳定性，均匀性，再现性等特性的方法，其中薄膜沉积在基板和稳定化处理，其中不存在薄膜的沉积，在衬底温度保持接近形成钙钛矿型氧化物电介质薄膜的温度的同时交替重复。此外，通过采用以下处理方法：（i）在包含与组成薄膜的元素反应的气体的气体气氛中，在等离子体发生的反应性气体的分解激发发生在沉积表面上或其附近的处理方法，（ii）处理方法，其中在至少包含臭氧（O 3）的气体气氛中在沉积表面上发生氧化反应，和（iii）其中在至少包括至少包含臭氧（O 3）的气体气氛中在沉积表面上照射短波长的光的处理方法在非沉积工艺中的非活性元素，沉积的薄膜中的氧浓度被调节，并且实现了良好质量和极低缺陷含量的介电薄膜。

50. 发明授权

US5662965A Method of depositing crystalline carbon-based thin films 失效
标题翻译：沉积结晶碳基薄膜的方法
公开(公告)号：US5662965A
公开(公告)日：1997-09-02
申请号：US351739
申请日：1994-12-08
申请人： Masahiro Deguchi , Masatoshi Kitagawa , Takashi Hirao
发明人： Masahiro Deguchi , Masatoshi Kitagawa , Takashi Hirao
IPC分类号： B32B9/00 , C23C14/02 , C23C14/06 , C23C14/24 , H01B1/06 , H01B5/14 , H01B13/00 , C23C16/00 , B05D3/06 , C23C14/30
CPC分类号： C23C14/027 , C23C14/0605 , C23C14/0635 , Y10S427/103
摘要： Crystalline carbon-based thin film structures are formed in which a compositionally-graded intermediate layer is first deposited on a substrate, and a crystalline carbon-based thin film such as silicon carbide or diamond is deposited thereafter on the intermediate layer. The compositionally-graded intermediate layer has a carbon content which increases in a direction away from the substrate. The compositionally-graded intermediate layer is effective in reducing problems associated with the lattice mismatch between the thin film and the substrate which hamper conventional hetero-epitaxial growth of high quality crystalline carbon-based thin films.
摘要翻译：形成结晶碳基薄膜结构，其中首先在基板上沉积组成梯度的中间层，然后在中间层上沉积诸如碳化硅或金刚石的结晶碳基薄膜。组分梯度的中间层具有在远离基底的方向上增加的碳含量。组分梯度的中间层有效地减少与薄膜和衬底之间的晶格失配相关的问题，这妨碍了高质量结晶碳基薄膜的常规异质外延生长。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式