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41. 发明授权

US07371332B2 Uniform etch system 有权
标题翻译：均匀刻蚀系统
公开(公告)号：US07371332B2
公开(公告)日：2008-05-13
申请号：US10642083
申请日：2003-08-14
申请人： Dean J. Larson , Babak Kadkhodayan , Di Wu , Kenji Takeshita , Bi-Ming Yen , Xingcai Su , William M. Denty, Jr. , Peter Loewenhardt
发明人： Dean J. Larson , Babak Kadkhodayan , Di Wu , Kenji Takeshita , Bi-Ming Yen , Xingcai Su , William M. Denty, Jr. , Peter Loewenhardt
IPC分类号： H01L21/306
CPC分类号： H01L21/67017
摘要： Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone surrounds the inner zone and the first gas is different than the second gas. Plasmas are simultaneously generated from the first gas and second gas. The layer is etched, where the layer is etched by the plasmas from the first gas and second gas.
摘要翻译：提供了在衬底上蚀刻一层。将基板放置在等离子体处理室中。第一气体被提供到等离子体处理室内的内部区域。第二气体被提供到等离子体处理室内的外部区域，其中外部区域围绕内部区域并且第一气体不同于第二气体。从第一气体和第二气体同时产生等离子体。蚀刻该层，其中该层被来自第一气体和第二气体的等离子体蚀刻。

42. 发明授权

US07294580B2 Method for plasma stripping using periodic modulation of gas chemistry and hydrocarbon addition 有权
标题翻译：使用气体化学和碳氢化合物加成的周期调制的等离子体剥离方法
公开(公告)号：US07294580B2
公开(公告)日：2007-11-13
申请号：US10860833
申请日：2004-06-03
申请人： Seokmin Yun , Ji Zhu , Peter Cirigliano , Sangheon Lee , Thomas S. Choi , Peter Loewenhardt , Mark H. Wilcoxson , Reza Sadjadi , Eric A. Hudson , James V. Tietz
发明人： Seokmin Yun , Ji Zhu , Peter Cirigliano , Sangheon Lee , Thomas S. Choi , Peter Loewenhardt , Mark H. Wilcoxson , Reza Sadjadi , Eric A. Hudson , James V. Tietz
IPC分类号： H01L21/00
CPC分类号： H01L21/31116 , H01L21/31138 , H01L21/76802 , H01L21/76829
摘要： A method for etching a feature in a low-k dielectric layer through a photoresist etch mask over a substrate. A gas-modulated cyclic stripping process is performed for more than three cycles for stripping a single photoresist mask. Each cycle of the gas-modulated cyclic stripping process comprises performing a protective layer formation phase and a stripping phase. The protective layer forming phase using first gas chemistry with a deposition gas chemistry, wherein the protective layer forming phase is performed in about 0.005 to 10 seconds for each cycle. The performing the stripping phase for stripping the photoresist mask using a second gas chemistry using a stripping gas chemistry, where the first gas chemistry is different than the second gas chemistry, wherein the etching phase is performed in about 0.005 to 10 seconds for each cycle.
摘要翻译：一种通过光刻胶蚀刻掩模在衬底上蚀刻低k电介质层中的特征的方法。执行气体调制的循环剥离工艺超过三个循环以剥离单个光致抗蚀剂掩模。气体调节循环汽提过程的每个循环包括进行保护层形成阶段和汽提阶段。使用具有沉积气化学性质的第一气体化学物质的保护层形成阶段，其中保护层形成阶段在每个循环中以约0.005至10秒钟进行。使用第二种气体化学法，使用剥离气体化学法，其中第一种气体化学物质与第二种气体化学物质不同，进行汽提阶段以剥离光致抗蚀剂掩模，其中每个循环在约0.005至10秒内进行蚀刻阶段。

43. 发明授权

US06949460B2 Line edge roughness reduction for trench etch 失效
公开(公告)号：US06949460B2
公开(公告)日：2005-09-27
申请号：US10712410
申请日：2003-11-12
申请人： Eric Wagganer , Helen H. Zhu , Daniel Le , Peter Loewenhardt
发明人： Eric Wagganer , Helen H. Zhu , Daniel Le , Peter Loewenhardt
IPC分类号： H01L20060101 , H01L21/311 , H01L21/4763 , H01L21/768
CPC分类号： H01J37/32082 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76802
摘要： A method for etching a trench to a trench depth in a dielectric layer over a substrate is provided. An ARC is applied over the dielectric layer. A photoresist mask is formed on the ARC, where the photoresist mask has a thickness. The ARC is etched through. A trench is etched into the dielectric layer with a dielectric to photoresist etch selectivity between 1:1 and 2:1.

44. 发明授权

US06270687B1 RF plasma method 失效
标题翻译：射频等离子体法
公开(公告)号：US06270687B1
公开(公告)日：2001-08-07
申请号：US09564042
申请日：2000-04-27
申请人： Yan Ye , Donald Olgado , Avi Tepman , Diana Ma , Gerald Zheyao Yin , Peter Loewenhardt , Jeng Hwang , Steve S. Y. Mak
发明人： Yan Ye , Donald Olgado , Avi Tepman , Diana Ma , Gerald Zheyao Yin , Peter Loewenhardt , Jeng Hwang , Steve S. Y. Mak
IPC分类号： B44C122
CPC分类号： H01J37/32477 , H01J37/321
摘要： An RF plasma etch reactor having an etch chamber with electrically conductive walls and a protective layer forming the portion of the walls facing the interior of the chamber. The protective layer prevents sputtering of material from the chamber walls by a plasma formed within the chamber. The etch reactor also has an inductive coil antenna disposed within the etch chamber which is used to generate the plasma by inductive coupling. Like the chamber walls, the inductive coil antenna is constructed to prevent sputtering of the material making up the antenna by the plasma. The coil antenna can take on any configuration (e.g. location, shape, orientation) that is necessary to achieve a desired power deposition pattern within the chamber. Examples of potential coil antenna configurations for achieving the desired power deposition pattern include constructing the coil antenna with a unitary or a segmented structure. The segmented structure involves the use of at least two coil segments wherein each segment is electrically isolated from the other segments and connected to a separate RF power signal. The unitary coil antenna or each of the coil segments can have a planar shape, a cylindrical shape, a truncated conical shape, a dome shape, or any combination thereof. The conductive walls are electrically grounded to serve as an electrical ground (i.e. anode) for a workpiece-supporting pedestal which is connected to a source of RF power to create a bias voltage at the surface of the workpiece.
摘要翻译： RF等离子体蚀刻反应器具有具有导电壁的蚀刻室和形成面向腔室内部的部分壁的保护层。保护层防止在室内形成的等离子体从室壁溅射材料。蚀刻反应器还具有设置在蚀刻室内的感应线圈天线，其用于通过感应耦合产生等离子体。类似于室壁，感应线圈天线被构造成防止由等离子体溅射构成天线的材料。线圈天线可以承受在室内实现期望的功率沉积图案所必需的任何配置（例如位置，形状，取向）。用于实现期望的功率沉积模式的电位线圈天线配置的示例包括以整体或分段结构构造线圈天线。分段结构涉及使用至少两个线圈段，其中每个段与其它段电隔离并连接到单独的RF功率信号。单线圈天线或每个线圈段可以具有平面形状，圆柱形，截顶圆锥形，圆顶形或其任何组合。导电壁电接地以用作工件支撑基座的电接地（即阳极），工件支撑基座连接到RF功率源，以在工件的表面产生偏置电压。

45. 发明授权

US06247425B1 Method and apparatus for improving processing and reducing charge damage in an inductively coupled plasma reactor 失效
标题翻译：用于改善电感耦合等离子体反应器中的处理和减少电荷损伤的方法和装置
公开(公告)号：US06247425B1
公开(公告)日：2001-06-19
申请号：US09579177
申请日：2000-05-25
申请人： Dimitris Lymberopoulos , Peter Loewenhardt , John Yamartino
发明人： Dimitris Lymberopoulos , Peter Loewenhardt , John Yamartino
IPC分类号： C23C1600
CPC分类号： H01J37/321 , H01J37/3266 , H01J2237/3348
摘要： The present invention provides an apparatus and method for processing a workpiece in an inductively coupled plasma reactor. Inductive power is applied to the reactor to generate a plasma. A magnetic field is generated within the plasma reactor having lines of force oriented perpendicular to the workpiece surface. It is a feature of the invention to control the electron temperature near the surface of the workpiece by controlling the applied magnetic field. It is a further feature to increase average ion density near the workpiece without otherwise causing damage to the workpiece due to uneven charge build-up. The applied magnetic field can be time invariant or time variant. In both cases processing can be optimized by adjusting the magnitude of the magnetic field to a level just below where damage due to uneven charge build-up occurs. With the time variant field, the average ion density can be adjusted with respect to average electron temperature. As such, average ion density near the workpiece can be increased without otherwise causing damage to the workpiece. It is a further feature of the present invention to provide independently controllable conductors for generating the magnetic field and to provide an adjustable non-uniformly distributed magnetic field within the chamber. This can be used to selectively control plasma density or to selectively confine process gas species.
摘要翻译：本发明提供了一种用于在电感耦合等离子体反应器中处理工件的装置和方法。将感应功率施加到反应器以产生等离子体。在等离子体反应器内产生一个与工件表面垂直的力线。通过控制所施加的磁场来控制工件表面附近的电子温度是本发明的一个特征。增加工件附近的平均离子密度的另一个特征是，由于不均匀的电荷积聚而不会对工件造成损害。施加的磁场可以是时间不变的或时间变化的。在这两种情况下，可以通过将磁场的大小调整到恰好低于由于不均匀电荷积聚引起的损坏的水平来进行处理。使用时变场，平均离子密度可以相对于平均电子温度进行调整。因此，可以增加工件附近的平均离子密度，而不会对工件造成损害。本发明的另一个特征是提供用于产生磁场的可独立控制的导体并提供可调节的非均匀分布的磁场在房间内这可以用于选择性地控制等离子体密度或选择性地限制工艺气体种类。

46. 发明授权

US5753044A RF plasma reactor with hybrid conductor and multi-radius dome ceiling 失效
标题翻译：射频等离子体反应器与混合导体和多半圆顶天花板
公开(公告)号：US5753044A
公开(公告)日：1998-05-19
申请号：US389889
申请日：1995-02-15
申请人： Hiroji Hanawa , Gerald Zheyao Yin , Diana X. Ma , Phil M. Salzman , Peter Loewenhardt , Allen Zhao
发明人： Hiroji Hanawa , Gerald Zheyao Yin , Diana X. Ma , Phil M. Salzman , Peter Loewenhardt , Allen Zhao
IPC分类号： H05H1/46 , H01J37/32 , H01L21/302 , H01L21/3065 , C23C16/00
CPC分类号： H01J37/321
摘要： An inductively coupled RF plasma reactor for processing semiconductor wafer includes a reactor chamber having a side wall and a ceiling, a wafer pedestal for supporting the wafer in the chamber, an RF power source, apparatus for introducing a processing gas into the reactor chamber, and a coil inductor adjacent the reactor chamber connected to the RF power source, the coil inductor including (a) a side section facing a portion of the side wall and including a bottom winding and a top winding, the top winding being at a height corresponding at least approximately to a top height of the ceiling, and (b) a top section extending radially inwardly from the top winding of the side section so as to overlie at least a substantial portion of the ceiling.
摘要翻译：用于处理半导体晶片的感应耦合RF等离子体反应器包括具有侧壁和天花板的反应室，用于将晶片支撑在室中的晶片基座，RF电源，将处理气体引入反应室的装置，以及与所述反应室相邻的线圈电感器，所述线圈电感器连接到所述RF电源，所述线圈电感器包括（a）面向所述侧壁的一部分并包括底部绕组和顶部绕组的侧面部分，所述顶部绕组的高度对应于至少大约到顶部的顶部高度，以及（b）从侧部的顶部绕组径向向内延伸的顶部部分，以便至少覆盖天花板的大部分。

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