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21. 发明授权

US09834840B2 Process kit shield for improved particle reduction 有权
公开(公告)号：US09834840B2
公开(公告)日：2017-12-05
申请号：US13106392
申请日：2011-05-12
申请人： Muhammad Rasheed , Rongjun Wang , Zhendong Liu , Xinyu Fu , Xianmin Tang
发明人： Muhammad Rasheed , Rongjun Wang , Zhendong Liu , Xinyu Fu , Xianmin Tang
IPC分类号： C23C14/35 , C23C14/56 , H01J37/32 , H01J37/34
CPC分类号： C23C14/35 , C23C14/564 , H01J37/32853 , H01J37/32871 , H01J37/34 , H01J37/3411
摘要： Apparatus for improved particle reduction are provided herein. In some embodiments, an apparatus may include a process kit shield comprising a one-piece metal body having an upper portion and a lower portion and having an opening disposed through the one-piece metal body, wherein the upper portion includes an opening-facing surface configured to be disposed about and spaced apart from a target of a physical vapor deposition chamber and wherein the opening-facing surface is configured to limit particle deposition on an upper surface of the upper portion of the one-piece metal body during sputtering of a target material from the target of the physical vapor deposition chamber.

22. 发明授权

US08871064B2 Electromagnet array in a sputter reactor 有权
标题翻译：溅射反应器中的电磁体阵列
公开(公告)号：US08871064B2
公开(公告)日：2014-10-28
申请号：US12695643
申请日：2010-01-28
申请人： Tza-Jing Gung , Xinyu Fu , Arvind Sundarrajan , Edward P. Hammond, IV , Praburam Gopalraja , John C. Forster , Mark A. Perrin , Andrew S. Gillard
发明人： Tza-Jing Gung , Xinyu Fu , Arvind Sundarrajan , Edward P. Hammond, IV , Praburam Gopalraja , John C. Forster , Mark A. Perrin , Andrew S. Gillard
IPC分类号： C23C14/34 , H01J37/32 , C23C14/35 , C23C14/04 , H01L21/768 , H01J37/34 , C23C14/16 , H01L21/285 , C23F4/00 , C23C14/06
CPC分类号： H01J37/3266 , C23C14/046 , C23C14/0641 , C23C14/165 , C23C14/358 , C23F4/00 , H01J37/321 , H01J37/32623 , H01J37/32688 , H01J37/3408 , H01L21/2855 , H01L21/76844 , H01L21/76846 , H01L21/76865
摘要： A multi-step process performed in a plasma sputter chamber including sputter deposition from the target and argon sputter etching of the substrate. The chamber includes a quadruple electromagnetic coil array coaxially arranged in a rectangular array about a chamber axis outside the sidewalls of a plasma sputter reactor in back of an RF coil within the chamber. The coil currents can be separately controlled to produce different magnetic field distributions, for example, between a sputter deposition mode in which the sputter target is powered to sputter target material onto a wafer and a sputter etch mode in which the RF coil supports the argon sputtering plasma. A TaN/Ta barrier is first sputter deposited with high target power and wafer bias. Argon etching is performed with even higher wafer bias. A flash step is applied with reduced target power and wafer bias.
摘要翻译：在等离子体溅射室中执行的包括从靶的溅射沉积和对衬底的氩溅射蚀刻的多步骤过程。该腔室包括一个四重电磁线圈阵列，该四极电磁线圈阵列围绕室内RF射频线圈背面的等离子体溅射反应器的侧壁外的腔室轴线同轴地布置。可以单独控制线圈电流以产生不同的磁场分布，例如在其中溅射靶被驱动以将靶材料溅射到晶片上的溅射沉积模式和其中RF线圈支撑氩溅射的溅射蚀刻模式之间等离子体。首先以高目标功率和晶片偏置溅射沉积TaN / Ta势垒。以更高的晶片偏压进行氩蚀刻。应用闪光步骤，降低目标功率和晶片偏置。

23. 发明申请

US20140120723A1 METHODS FOR DEPOSITING FLUORINE/CARBON-FREE CONFORMAL TUNGSTEN 有权
标题翻译：用于沉积氟/无碳一致性钨酸盐的方法
公开(公告)号：US20140120723A1
公开(公告)日：2014-05-01
申请号：US14062804
申请日：2013-10-24
申请人： Xinyu Fu , Srinivas Gandikota , Avgerinos V. Gelatos , Atif Noori , Mei Chang , David Thompson , Steve G. Ghanayem
发明人： Xinyu Fu , Srinivas Gandikota , Avgerinos V. Gelatos , Atif Noori , Mei Chang , David Thompson , Steve G. Ghanayem
IPC分类号： H01L21/285
CPC分类号： H01L21/28562 , C23C16/0272 , C23C16/06 , C23C16/14 , C23C16/345 , C23C16/42 , C23C16/45525 , C23C16/45551 , C23C16/45553 , C23C16/45563 , C23C16/45565 , C23C16/4557 , C23C16/45574 , H01L21/28088 , H01L21/28506 , H01L21/32051 , H01L21/32053 , H01L21/76877
摘要： Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.
摘要翻译：提供了使用包含一种或多种五氯化钨，具有经验式WCl 5或WCl 6的化合物的含钨反应气体沉积钨膜或含钨膜的原子层沉积方法。

24. 发明授权

US08586479B2 Methods for forming a contact metal layer in semiconductor devices 失效
标题翻译：在半导体器件中形成接触金属层的方法
公开(公告)号：US08586479B2
公开(公告)日：2013-11-19
申请号：US13356002
申请日：2012-01-23
申请人： Xinyu Fu , Srinivas Gandikota , Sang Ho Yu , Kavita Shah , Yu Lei
发明人： Xinyu Fu , Srinivas Gandikota , Sang Ho Yu , Kavita Shah , Yu Lei
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C16/0236 , C23C16/045 , C23C16/45523 , H01L21/02057 , H01L21/28518 , H01L21/28562 , H01L21/306 , H01L21/76814 , H01L21/76826
摘要： Methods for forming a contact metal layer in a contact structure in semiconductor devices are provided in the present invention. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device includes pulsing a deposition precursor gas mixture to a surface of a substrate disposed in a metal deposition processing chamber, pulsing a purge gas mixture to an edge of the substrate, wherein the purge gas mixture includes at least a hydrogen containing gas and an inert gas, and forming a contact metal layer on the substrate from the first deposition precursor gas mixture.
摘要翻译：在本发明中提供了在半导体器件的接触结构中形成接触金属层的方法。在一个实施例中，用于在半导体器件中沉积用于形成接触结构的接触金属层的方法包括：将沉积前体气体混合物脉动到设置在金属沉积处理室中的衬底的表面，将清洗气体混合物脉冲到边缘其中所述吹扫气体混合物至少包含含氢气体和惰性气体，并且从所述第一沉积前体气体混合物在所述衬底上形成接触金属层。

25. 发明授权

US08524600B2 Post deposition treatments for CVD cobalt films 失效
标题翻译： CVD钴膜的后沉积处理
公开(公告)号：US08524600B2
公开(公告)日：2013-09-03
申请号：US13174692
申请日：2011-06-30
申请人： Yu Lei , Xinyu Fu , Anantha Subramani , Seshadri Ganguli , Srinivas Gandikota
发明人： Yu Lei , Xinyu Fu , Anantha Subramani , Seshadri Ganguli , Srinivas Gandikota
IPC分类号： H01L21/283 , B82Y40/00
CPC分类号： H01L21/02697 , B82Y40/00 , H01L21/28556 , H01L21/28562 , H01L21/7681 , H01L21/76834 , H01L21/76846 , H01L21/7685 , H01L21/76856 , H01L21/76858 , H01L21/76862 , H01L21/76864 , H01L21/76873 , H01L21/76877 , H01L21/76885 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention provide methods for forming materials on a substrate used for metal gate and other applications. In one embodiment, a method includes forming a cobalt stack over a barrier layer disposed on a substrate by depositing a cobalt layer during a deposition process, exposing the cobalt layer to a plasma to form a plasma-treated cobalt layer during a plasma process, and repeating the cobalt deposition process and the plasma process to form the cobalt stack containing a plurality of plasma-treated cobalt layers. The method further includes exposing the cobalt stack to an oxygen source gas to form a cobalt oxide layer from an upper portion of the cobalt stack during a surface oxidation process and heating the remaining portion of the cobalt stack to a temperature within a range from about 300° C. to about 500° C. to form a crystalline cobalt film during a thermal annealing crystallization process.
摘要翻译：本发明的实施例提供了在用于金属栅极和其它应用的基板上形成材料的方法。在一个实施例中，一种方法包括通过在沉积工艺期间沉积钴层而在设置在衬底上的势垒层上形成钴堆叠，在等离子体工艺期间将钴层暴露于等离子体以形成等离子体处理的钴层，以及重复钴沉积工艺和等离子体工艺以形成含有多个等离子体处理的钴层的钴堆。该方法还包括将钴堆叠暴露于氧源气体，以在表面氧化过程期间从钴堆叠的上部形成钴氧化物层，并将钴堆叠的剩余部分加热至约300 约500℃，以在热退火结晶过程中形成结晶钴膜。

26. 发明申请

US20130189840A1 METHODS FOR FORMING A CONTACT METAL LAYER IN SEMICONDUCTOR DEVICES 失效
标题翻译：在半导体器件中形成接触金属层的方法
公开(公告)号：US20130189840A1
公开(公告)日：2013-07-25
申请号：US13356002
申请日：2012-01-23
申请人： Xinyu Fu , Srinivas Gandikota , Sang Ho Yu , Kavita Shah , Yu Lei
发明人： Xinyu Fu , Srinivas Gandikota , Sang Ho Yu , Kavita Shah , Yu Lei
IPC分类号： H01L21/285
CPC分类号： H01L21/76843 , C23C16/0236 , C23C16/045 , C23C16/45523 , H01L21/02057 , H01L21/28518 , H01L21/28562 , H01L21/306 , H01L21/76814 , H01L21/76826
摘要： Methods for forming a contact metal layer in a contact structure in semiconductor devices are provided in the present invention. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device includes pulsing a deposition precursor gas mixture to a surface of a substrate disposed in a metal deposition processing chamber, pulsing a purge gas mixture to an edge of the substrate, wherein the purge gas mixture includes at least a hydrogen containing gas and an inert gas, and forming a contact metal layer on the substrate from the first deposition precursor gas mixture.
摘要翻译：在本发明中提供了在半导体器件的接触结构中形成接触金属层的方法。在一个实施例中，用于在半导体器件中沉积用于形成接触结构的接触金属层的方法包括：将沉积前体气体混合物脉动到设置在金属沉积处理室中的衬底的表面，将清洗气体混合物脉冲到边缘其中所述吹扫气体混合物至少包含含氢气体和惰性气体，并且从所述第一沉积前体气体混合物在所述衬底上形成接触金属层。

27. 发明授权

US08455352B1 Method for removing native oxide and associated residue from a substrate 失效
公开(公告)号：US08455352B1
公开(公告)日：2013-06-04
申请号：US13480091
申请日：2012-05-24
申请人： Bo Zheng , Arvind Sundarrajan , Xinyu Fu
发明人： Bo Zheng , Arvind Sundarrajan , Xinyu Fu
IPC分类号： H01L21/44
CPC分类号： H01L21/02063 , H01J37/32082 , H01L21/02057 , H01L21/0206 , H01L21/28518 , H01L21/28556 , H01L21/28568 , H01L21/743 , H01L21/768
摘要： Native oxides and associated residue are removed from surfaces of a substrate by sequentially performing two plasma cleaning processes on the substrate in a single processing chamber. The first plasma cleaning process removes native oxide formed on a substrate surface by generating a cleaning plasma from a mixture of ammonia (NH3) and nitrogen trifluoride (NF3) gases, condensing products of the cleaning plasma on the native oxide to form a thin film that contains ammonium hexafluorosilicate ((NH4)2SiF6), and subliming the thin film off of the substrate surface. The second plasma cleaning process removes remaining residues of the thin film by generating a second cleaning plasma from nitrogen trifluoride gas. Products of the second cleaning plasma react with a few angstroms of the bare silicon present on the surface, forming silicon tetrafluoride (SiF4) and lifting off residues of the thin film.

28. 发明申请

US20120070982A1 METHODS FOR FORMING LAYERS ON A SUBSTRATE 有权
标题翻译：在基材上形成层的方法
公开(公告)号：US20120070982A1
公开(公告)日：2012-03-22
申请号：US13226612
申请日：2011-09-07
申请人： JICK M. YU , RONG TAO , XINYU FU
发明人： JICK M. YU , RONG TAO , XINYU FU
IPC分类号： H01L21/768
CPC分类号： H01L21/2855 , H01L21/76843 , H01L21/76865 , H01L21/76868 , H01L21/76873 , H01L21/76879 , H01L2221/1089
摘要： Methods for forming layers on a substrate having one or more features formed therein are provided herein. In some embodiments, a method for forming layers on a substrate having one or more features formed therein may include depositing a seed layer within the one or more features; and etching the seed layer to remove at least a portion of the seed layer proximate an opening of the feature such that the seed layer comprises a first thickness disposed on a lower portion of a sidewall of the feature proximate a bottom of the feature and a second thickness disposed on an upper portion of the sidewall proximate the opening of the feature and wherein the first thickness is greater than the second thickness.
摘要翻译：本文提供了在其上形成有一个或多个特征的基底上形成层的方法。在一些实施例中，用于在其上形成有一个或多个特征的衬底上形成层的方法可包括在一个或多个特征内沉积种子层; 并且蚀刻种子层以去除邻近特征的开口的种子层的至少一部分，使得种子层包括设置在靠近特征的底部的特征的侧壁的下部的第一厚度，以及第二厚度设置在靠近特征开口的侧壁的上部，并且其中第一厚度大于第二厚度。

29. 发明授权

US08021514B2 Remote plasma source for pre-treatment of substrates prior to deposition 有权
标题翻译：远程等离子体源，用于在沉积之前预处理衬底
公开(公告)号：US08021514B2
公开(公告)日：2011-09-20
申请号：US11776131
申请日：2007-07-11
申请人： Xinyu Fu , Jick M. Yu
发明人： Xinyu Fu , Jick M. Yu
IPC分类号： C23F1/00
CPC分类号： C23C16/0245 , H01J37/32357
摘要： A plasma processing chamber particularly useful for pre-treating low-k dielectric films and refractory metal films subject to oxidation prior to deposition of other layers. A remote plasma source (RPS) excites a processing gas into a plasma and delivers it through a supply tube to a manifold in back of a showerhead faceplate. The chamber is configured for oxidizing and reducing plasmas in the same or different processes when oxygen and hydrogen are selectively supplied to the RPS. The supply tube and showerhead may be formed of dielectric oxides which may be passivated by a water vapor plasma from the remote plasma source. In one novel process, a protective hydroxide coating is formed on refractory metals by alternating neutral plasmas of hydrogen and oxygen.
摘要翻译：一种等离子体处理室，特别适用于在沉积其它层之前预处理低k电介质膜和难以处理的金属薄膜。远程等离子体源（RPS）将处理气体激发到等离子体中并将其通过供应管输送到喷头面板背面的歧管。当氧气和氢气选择性地供应给RPS时，该室被配置用于在相同或不同的过程中氧化和还原等离子体。供应管和喷头可以由介电氧化物形成，其可以由远程等离子体源的水蒸汽等离子体钝化。在一个新颖的方法中，通过交替的氢和氧的中性等离子体在难熔金属上形成保护性氢氧化物涂层。

30. 发明申请

US20100167526A1 METHOD FOR IMPROVING ELECTROMIGRATION LIFETIME OF COPPER INTERCONNECTION BY EXTENDED POST ANNEAL 失效
标题翻译：通过扩展后期改善铜互连电活化寿命的方法
公开(公告)号：US20100167526A1
公开(公告)日：2010-07-01
申请号：US12635528
申请日：2009-12-10
申请人： Xinyu Fu , Jick M. Yu
发明人： Xinyu Fu , Jick M. Yu
IPC分类号： H01L21/768
CPC分类号： H01L21/76838 , H01L21/76844 , H01L21/76855 , H01L21/76873 , H01L21/76877 , H01L21/76883
摘要： Methods for improving electromigration of copper interconnection structures are provided. In one embodiment, a method of annealing a microelectronic device includings forming microelectronic features on a substrate, forming a contact structure over the microelectronic features, and forming a copper interconnection structure over the contact structure. A passivation layer is deposited over the copper interconnection structure and the substrate is subjected to a first anneal at a temperature of about 350° C. to 400° C. for a time duration between about 30 minutes to about 1 hour. The substrate is subjected to a second anneal at a temperature of about 150° C. to 300° C. for a time duration between about 24 to about 400 hours.
摘要翻译：提供了改善铜互连结构电迁移的方法。在一个实施例中，一种退火微电子器件的方法，包括在衬底上形成微电子特征，在微电子特征上形成接触结构，以及在接触结构上形成铜互连结构。在铜互连结构上沉积钝化层，并且将衬底在约350℃至400℃的温度下进行约30分钟至约1小时的持续时间的第一次退火。将衬底在约150℃至300℃的温度下进行约24至约400小时的持续时间的第二次退火。

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