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1. 发明授权

US09834840B2 Process kit shield for improved particle reduction 有权
公开(公告)号：US09834840B2
公开(公告)日：2017-12-05
申请号：US13106392
申请日：2011-05-12
申请人： Muhammad Rasheed , Rongjun Wang , Zhendong Liu , Xinyu Fu , Xianmin Tang
发明人： Muhammad Rasheed , Rongjun Wang , Zhendong Liu , Xinyu Fu , Xianmin Tang
IPC分类号： C23C14/35 , C23C14/56 , H01J37/32 , H01J37/34
CPC分类号： C23C14/35 , C23C14/564 , H01J37/32853 , H01J37/32871 , H01J37/34 , H01J37/3411
摘要： Apparatus for improved particle reduction are provided herein. In some embodiments, an apparatus may include a process kit shield comprising a one-piece metal body having an upper portion and a lower portion and having an opening disposed through the one-piece metal body, wherein the upper portion includes an opening-facing surface configured to be disposed about and spaced apart from a target of a physical vapor deposition chamber and wherein the opening-facing surface is configured to limit particle deposition on an upper surface of the upper portion of the one-piece metal body during sputtering of a target material from the target of the physical vapor deposition chamber.

2. 发明授权

US08580094B2 Magnetron design for RF/DC physical vapor deposition 有权
标题翻译：用于RF / DC物理气相沉积的磁控管设计
公开(公告)号：US08580094B2
公开(公告)日：2013-11-12
申请号：US13163817
申请日：2011-06-20
申请人： Rongjun Wang , Sally Lou , Muhammad Rasheed , Jianxin Lei , Xianmin Tang , Srinivas Gandikota , Ryan Hanson , Tza-Jing Gung , Keith A. Miller , Thanh X. Nguyen
发明人： Rongjun Wang , Sally Lou , Muhammad Rasheed , Jianxin Lei , Xianmin Tang , Srinivas Gandikota , Ryan Hanson , Tza-Jing Gung , Keith A. Miller , Thanh X. Nguyen
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , H01J37/3408 , H01J37/345 , H01J37/3461
摘要： Methods and apparatus to improve target life and deposition uniformity in PVD chambers are provided herein. In some embodiments, a magnetron assembly includes a shunt plate having a central axis, the shunt plate rotatable about the central axis, a first open loop magnetic pole arc coupled to the shunt plate at a first radius from the central axis, and a second open loop magnetic pole arc coupled the shunt plate at a first distance from the first open loop magnetic pole arc, wherein at least one of the first radius varies along the first open loop magnetic pole arc or the first distance varies along the second open loop magnetic pole arc. In some embodiments, a first polarity of the first open loop magnetic pole arc opposes a second polarity of the second open loop magnetic pole arc.
摘要翻译：本文提供了改善PVD室中的目标寿命和沉积均匀性的方法和装置。在一些实施例中，磁控管组件包括具有中心轴线的分流板，分流板可围绕中心轴线旋转，第一开环磁极电弧在与中心轴线成第一半径处耦合到分流板，第二开路环形磁极以与第一开环磁极弧成第一距离的方式将分流板电弧耦合，其中第一半径中的至少一个沿第一开环磁极弧变化，或者第一距离沿第二开环磁极变化弧。在一些实施例中，第一开环磁极的第一极性与第二开环磁极的第二极性相反。

3. 发明申请

US20160293798A1 PVD BUFFER LAYERS FOR LED FABRICATION 审中-公开
公开(公告)号：US20160293798A1
公开(公告)日：2016-10-06
申请号：US15183594
申请日：2016-06-15
申请人： Mingwei Zhu , Rongjun Wang , Nag B. Patibandla , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
发明人： Mingwei Zhu , Rongjun Wang , Nag B. Patibandla , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
IPC分类号： H01L33/12 , H01L33/32 , H01L33/00 , H01L33/06
CPC分类号： H01L33/12 , C30B23/02 , C30B29/403 , H01L21/0237 , H01L21/02439 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02631 , H01L21/02661 , H01L29/205 , H01L33/007 , H01L33/06 , H01L33/32
摘要： Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.

4. 发明申请

US20130285065A1 PVD BUFFER LAYERS FOR LED FABRICATION 有权
标题翻译：用于LED制造的PVD缓冲层
公开(公告)号：US20130285065A1
公开(公告)日：2013-10-31
申请号：US13868385
申请日：2013-04-23
申请人： Mingwei Zhu , Rongjun Wang , Nag B. Patibandla , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
发明人： Mingwei Zhu , Rongjun Wang , Nag B. Patibandla , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
IPC分类号： H01L21/02 , H01L29/205
CPC分类号： H01L33/12 , C30B23/02 , C30B29/403 , H01L21/0237 , H01L21/02439 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02631 , H01L21/02661 , H01L29/205 , H01L33/007 , H01L33/06 , H01L33/32
摘要： Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.
摘要翻译：描述了具有物理气相沉积（PVD）形成的氮化铝缓冲层的氮化镓基光器件的制造。还描述了PVD AlN缓冲层的工艺条件。还描述了PVD氮化铝缓冲层的基板预处理。在一个实例中，在衬底上制造缓冲层的方法包括预处理衬底的表面。该方法还涉及从容纳在具有氮基气体或等离子体的物理气相沉积（PVD）室中的含铝靶反应溅射基板表面上的氮化铝（AlN）层。

5. 发明授权

US09396933B2 PVD buffer layers for LED fabrication 有权
标题翻译：用于LED制造的PVD缓冲层
公开(公告)号：US09396933B2
公开(公告)日：2016-07-19
申请号：US13868385
申请日：2013-04-23
申请人： Mingwei Zhu , Rongjun Wang , Nag B. Patibandia , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
发明人： Mingwei Zhu , Rongjun Wang , Nag B. Patibandia , Xianmin Tang , Vivek Agrawal , Cheng-Hsiung Tsai , Muhammad Rasheed , Dinesh Saigal , Praburam Gopal Raja , Omkaram Nalamasu , Anantha Subramani
IPC分类号： H01L21/02 , H01L29/205 , H01L33/00 , C30B23/02 , C30B29/40 , H01L33/12
CPC分类号： H01L33/12 , C30B23/02 , C30B29/403 , H01L21/0237 , H01L21/02439 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02631 , H01L21/02661 , H01L29/205 , H01L33/007 , H01L33/06 , H01L33/32
摘要： Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.
摘要翻译：描述了具有物理气相沉积（PVD）形成的氮化铝缓冲层的氮化镓基光器件的制造。还描述了PVD AlN缓冲层的工艺条件。还描述了PVD氮化铝缓冲层的基板预处理。在一个实例中，在衬底上制造缓冲层的方法包括预处理衬底的表面。该方法还涉及从容纳在具有氮基气体或等离子体的物理气相沉积（PVD）室中的含铝靶反应溅射基板表面上的氮化铝（AlN）层。

6. 发明申请

US20120103257A1 DEPOSITION RING AND ELECTROSTATIC CHUCK FOR PHYSICAL VAPOR DEPOSITION CHAMBER 有权
标题翻译：用于物理蒸气沉积室的沉积环和静电吸盘
公开(公告)号：US20120103257A1
公开(公告)日：2012-05-03
申请号：US13280771
申请日：2011-10-25
申请人： Muhammad Rasheed , Keith A. Miller , Rongjun Wang
发明人： Muhammad Rasheed , Keith A. Miller , Rongjun Wang
IPC分类号： C23C16/458 , C23C16/04 , C23C16/44
CPC分类号： C23C14/50 , C23C14/3407 , C23C14/564 , C23C16/4585 , H01L21/68735
摘要： Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a deposition ring and a pedestal assembly. The components of the process kit work alone, and in combination, to significantly reduce their effects on the electric fields around a substrate during processing.
摘要翻译：本发明的实施例一般涉及用于半导体处理室的处理套件和具有套件的半导体处理室。更具体地，本文所述的实施例涉及包括沉积环和基座组件的处理套件。处理套件的组件单独工作，并且组合工作，以显着降低其在处理期间对基板周围的电场的影响。

7. 发明授权

US08911601B2 Deposition ring and electrostatic chuck for physical vapor deposition chamber 有权
标题翻译：用于物理气相沉积室的沉积环和静电吸盘
公开(公告)号：US08911601B2
公开(公告)日：2014-12-16
申请号：US13280771
申请日：2011-10-25
申请人： Muhammad Rasheed , Keith A. Miller , Rongjun Wang
发明人： Muhammad Rasheed , Keith A. Miller , Rongjun Wang
IPC分类号： C25B9/00 , C25B11/00 , C25B13/00 , C23C14/00 , B05C13/00 , B05C13/02 , B05C21/00 , C23C16/00 , C23C14/34 , C23C16/458 , C23C14/50 , C23C14/56 , H01L21/687
CPC分类号： C23C14/50 , C23C14/3407 , C23C14/564 , C23C16/4585 , H01L21/68735
摘要： Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a deposition ring and a pedestal assembly. The components of the process kit work alone, and in combination, to significantly reduce their effects on the electric fields around a substrate during processing.
摘要翻译：本发明的实施例一般涉及用于半导体处理室的处理套件和具有套件的半导体处理室。更具体地，本文所述的实施例涉及包括沉积环和基座组件的处理套件。处理套件的组件单独工作，并且组合工作，以显着降低其在处理期间对基板周围的电场的影响。

8. 发明授权

US08108981B2 Method of making an electrostatic chuck with reduced plasma penetration and arcing 有权
标题翻译：制造具有降低的等离子体穿透和电弧放电的静电卡盘的方法
公开(公告)号：US08108981B2
公开(公告)日：2012-02-07
申请号：US11888327
申请日：2007-07-31
申请人： Dmitry Lubomirsky , Kadthala Ramaya Narendranath , Xinglong Chen , Sudhir Gondhalekar , Muhammad Rasheed , Tony Kaushal
发明人： Dmitry Lubomirsky , Kadthala Ramaya Narendranath , Xinglong Chen , Sudhir Gondhalekar , Muhammad Rasheed , Tony Kaushal
IPC分类号： B23P17/00
CPC分类号： H02N13/00 , H01L21/6833 , Y10T29/49117 , Y10T29/49885
摘要： A method of making an electrostatic chuck comprising positioning a plate into a channel in a body to form a plenum and inserting a dielectric component into an opening in the plate, where the dielectric component defines a portion of a passage from the plenum. Thereafter, depositing a dielectric layer covering at least a portion of the body and at least a portion of the plate to form a support surface. The dielectric layer is polished to a specified thickness. In one embodiment, the polishing process forms an opening through the dielectric layer to enable the dielectric component to define a passage between the support surface and the plenum. In another embodiment, at least a portion of the dielectric layer is porous proximate the dielectric component such that the porous dielectric layer and the dielectric component form a passage between the support surface and the plenum. In a further embodiment, a hole is formed through the dielectric layer and the hole in the dielectric layer and the dielectric component form a passage between the support surface and the plenum.
摘要翻译：一种制造静电卡盘的方法，包括将板定位在主体中的通道中以形成气室，并将电介质部件插入板中的开口中，其中介电部件限定了来自气室的通道的一部分。此后，沉积覆盖主体的至少一部分和板的至少一部分以形成支撑表面的电介质层。将电介质层抛光至规定的厚度。在一个实施例中，抛光工艺形成通过介电层的开口，以使得介质部件能够在支撑表面和集气室之间限定通道。在另一个实施例中，电介质层的至少一部分在绝缘元件附近是多孔的，使得多孔介电层和电介质元件在支撑表面和增压室之间形成通道。在另一实施例中，穿过电介质层形成孔，并且电介质层中的孔和电介质元件在支撑表面和气室之间形成通道。

9. 发明申请

US20060113038A1 Gas distribution system for improved transient phase deposition 有权
标题翻译：用于改善瞬态相沉积的气体分配系统
公开(公告)号：US20060113038A1
公开(公告)日：2006-06-01
申请号：US11123453
申请日：2005-05-04
申请人： Sudhir Gondhalekar , Robert Duncan , Siamak Salimian , Muhammad Rasheed , Harry Whitesell , Bruno Geoffrion , Padmanabhan Krishnaraj , Rudolf Gujer
发明人： Sudhir Gondhalekar , Robert Duncan , Siamak Salimian , Muhammad Rasheed , Harry Whitesell , Bruno Geoffrion , Padmanabhan Krishnaraj , Rudolf Gujer
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： C23C16/4558
摘要： Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel. The plurality of orifices are spaced from the gas inlet by a plurality of distances, and have sizes which vary with the distances from the gas inlet as measured along the first channel, such that the size of the orifice increases with an increase in the distance between the orifice and the gas inlet as measured along the first channel.
摘要翻译：本发明的实施例涉及一种将气体更均匀地分配到处理室中的气体分配系统。在一个实施例中，气体分配系统包括包括外表面和内表面的气环，以及设置在气环的外表面处的气体入口。气体入口与设置在气体环的外表面和内表面之间的第一通道流体耦合。多个气体出口分布在气环的内表面上，并且与设置在气体环的外表面和内表面之间的第二通道流体连接。多个孔流体耦合在第一通道和第二通道之间。多个孔与气体入口间隔多个距离，并且具有随着沿着第一通道测量的与气体入口的距离而变化的尺寸，使得孔的尺寸随着气体入口之间的距离的增加而增加沿着第一通道测量的孔口和气体入口。

10. 发明授权

US08795488B2 Apparatus for physical vapor deposition having centrally fed RF energy 有权
标题翻译：用于物理气相沉积的装置具有中央馈送的RF能量
公开(公告)号：US08795488B2
公开(公告)日：2014-08-05
申请号：US13048440
申请日：2011-03-15
申请人： Muhammad Rasheed , Lara Hawrylchak , Michael S. Cox , Donny Young , Kirankumar Savandaiah , Alan Ritchie
发明人： Muhammad Rasheed , Lara Hawrylchak , Michael S. Cox , Donny Young , Kirankumar Savandaiah , Alan Ritchie
IPC分类号： C23C14/40
CPC分类号： H01J37/3405 , H01J37/3411
摘要： In some embodiments, a feed structure to couple RF energy to a target may include a body having a first end to receive RF energy and a second end opposite the first end to couple the RF energy to a target, the body further having a central opening disposed through the body from the first end to the second end; a first member coupled to the body at the first end, wherein the first member comprises a first element circumscribing the body and extending radially outward from the body, and one or more terminals disposed in the first member to receive RF energy from an RF power source; and a source distribution plate coupled to the second end of the body to distribute the RF energy to the target, wherein the source distribution plate includes a hole disposed through the plate and aligned with the central opening of the body.
摘要翻译：在一些实施例中，将RF能量耦合到目标的馈送结构可以包括具有接收RF能量的第一端的主体和与第一端相对的第二端以将RF能量耦合到目标，所述主体还具有中心开口从第一端至第二端穿过本体; 第一构件，其在所述第一端处联接到所述主体，其中所述第一构件包括限定所述主体并且从所述主体径向向外延伸的第一元件以及设置在所述第一构件中以从RF电源接收RF能量的一个或多个端子 ; 以及耦合到所述主体的第二端以将RF能量分配到所述目标的源分布板，其中所述源分配板包括穿过所述板布置并与所述主体的中心开口对准的孔。

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