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1. 发明申请

US20180318890A1 CONDITIONING CHAMBER COMPONENT 审中-公开
公开(公告)号：US20180318890A1
公开(公告)日：2018-11-08
申请号：US15969626
申请日：2018-05-02
申请人： Lam Research Corporation
发明人： Amir A. YASSERI , Hong SHIH , John DAUGHERTY , Duane OUTKA , Lin XU , Armen AVOYAN , Cliff LA CROIX , Girish HUNDI
IPC分类号： B08B7/04 , H01J37/32 , B08B3/12 , B08B3/04 , B08B3/14 , B08B5/02
CPC分类号： B08B7/04 , B08B3/048 , B08B3/12 , B08B3/14 , B08B5/02 , H01J37/32853
摘要： An apparatus for conditioning a component of a processing chamber is provided. A tank for holding a megasonic conditioning solution is provided. A mount holds the component immersed in a megasonic conditioning solution, when the tank is filled with the megasonic conditioning solution. A megasonic conditioning solution inlet system delivers the megasonic conditioning solution to the tank. A megasonic transducer head comprises at least one megasonic transducer to provide megasonic energy to the megasonic conditioning solution, wherein the megasonic energy is delivered to the component via the megasonic conditioning solution. A megasonic conditioning solution drain system drains the megasonic conditioning solution from the tank at a location above where the component is held in the megasonic conditioning solution. An actuator moves the megasonic transducer head across the tank.

2. 发明授权

US09773665B1 Particle reduction in a physical vapor deposition chamber 有权
公开(公告)号：US09773665B1
公开(公告)日：2017-09-26
申请号：US15371142
申请日：2016-12-06
申请人： APPLIED MATERIALS, INC.
发明人： Weimin Zeng , Thanh X. Nguyen , Yong Cao
IPC分类号： H01L21/02 , C23C14/22 , C23C14/06
CPC分类号： C23C14/22 , C23C14/0036 , C23C14/024 , C23C14/0652 , C23C14/185 , C23C14/35 , H01J37/32477 , H01J37/32495 , H01J37/32853 , H01L21/02631
摘要： Methods and apparatus for reducing particles generated in a process carried out in a process chamber are provided herein. In some embodiments, a process kit shield includes: a body having a surface facing a processing volume of a physical vapor deposition (PVD) process chamber, wherein the body is composed of aluminum oxide (Al2O3), and a silicon nitride layer on the surface of the body.

3. 发明申请

US20170194561A1 PLASMA PROCESSING METHOD 有权
公开(公告)号：US20170194561A1
公开(公告)日：2017-07-06
申请号：US15260351
申请日：2016-09-09
申请人： Hitachi High-Technologies Corporation
发明人： Makoto SUYAMA , Naohiro YAMAMOTO , Masato ISHIMARU , Hidenori TOYOOKA , Norihiro HOSAKA
IPC分类号： H01L43/12 , B08B7/00 , H01J37/32 , B08B9/08 , H01L43/08 , H01L43/10
CPC分类号： H01L43/12 , B08B7/0035 , B08B9/08 , H01J37/321 , H01J37/3211 , H01J37/32165 , H01J37/32651 , H01J37/32853 , H01J37/32862 , H01J2237/334 , H01J2237/335 , H01L43/08 , H01L43/10
摘要： According to one embodiment of the present invention, there is provided a plasma processing method for forming a pattern of a mask on a laminated film of a magnetic film and a metal oxide film, and the plasma processing method includes: plasma etching the magnetic film in a chamber; and after the plasma etching, plasma cleaning the chamber, wherein the plasma cleaning performs first plasma cleaning of plasma cleaning using a gas mixture of chlorine element-containing gas and boron trichloride gas, and after the first plasma cleaning, second plasma cleaning of removing boron remaining in the chamber.

4. 发明申请

US20160379833A1 METHOD FOR CLEANING PLASMA PROCESSING CHAMBER AND SUBSTRATE 有权
标题翻译：清洗等离子体处理室和基板的方法
公开(公告)号：US20160379833A1
公开(公告)日：2016-12-29
申请号：US14753735
申请日：2015-06-29
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
发明人： Shih-Ping HONG , Yu-Cheng LIU
IPC分类号： H01L21/3065 , B08B7/00 , B08B9/08 , H01L21/02 , H01L21/32
CPC分类号： H01L21/02071 , B08B7/0035 , B08B9/0865 , C23C16/4405 , H01J37/3244 , H01J37/32834 , H01J37/32853 , H01J37/32862 , H01J37/32871 , H01J2237/334 , H01J2237/335 , H01L21/02041 , H01L21/0206 , H01L21/02063 , H01L21/02334 , H01L21/3065 , H01L21/31116 , H01L21/31122 , H01L21/32136 , H01L21/67069 , H01L21/76802 , H01L21/76814
摘要： A method for cleaning a plasma processing chamber is provided. The method includes introducing an organic gas into a plasma processing chamber. The organic gas includes an organic compound including carbon and hydrogen. The method includes generating an organic plasma by exciting the organic gas. The organic plasma reacts with metal compound residues over an interior surface of the plasma processing chamber to volatilize the metal compound residues into a gaseous metal compound. The method includes removing the gaseous metal compound from the plasma processing chamber.
摘要翻译：提供了一种用于清洁等离子体处理室的方法。该方法包括将有机气体引入等离子体处理室。有机气体包括碳和氢的有机化合物。该方法包括通过激发有机气体产生有机等离子体。有机血浆与等离子体处理室的内表面上的金属化合物残留物反应，使金属化合物残留物挥发成气态金属化合物。该方法包括从等离子体处理室中除去气态金属化合物。

5. 发明申请

US20160319422A1 THIN FILM ENCAPSULATION PROCESSING SYSTEM AND PROCESS KIT PERMITTING LOW-PRESSURE TOOL REPLACEMENT 审中-公开
标题翻译：薄膜封装加工系统和工艺包容许低压工具更换
公开(公告)号：US20160319422A1
公开(公告)日：2016-11-03
申请号：US15108119
申请日：2015-01-20
申请人： APPLIED MATERIALS, INC.
发明人： Shinichi KURITA , Jozef KUDELA , John M. WHITE , Dieter HAAS
IPC分类号： C23C16/04 , H01L51/52 , H01J37/32 , H01L21/67 , H01L21/677 , H01L51/56 , H01L21/687
CPC分类号： C23C16/45548 , C23C16/042 , C23C16/4402 , C23C16/54 , H01J37/32082 , H01J37/3244 , H01J37/32467 , H01J37/32513 , H01J37/32715 , H01J37/32834 , H01J37/32853 , H01J37/32899 , H01J2237/327 , H01J2237/3321 , H01L21/6719 , H01L21/67748 , H01L21/67751 , H01L21/68742 , H01L51/0011 , H01L51/5237 , H01L51/5253 , H01L51/56
摘要： The present disclosure relates to methods and apparatus for a thin film encapsulation (TFE). A process kit for TFE is provided. The process kit is an assembly including a window, a mask parallel to the window, and a frame. The process kit further includes an inlet channel for flowing process gases into the volume between the window and the mask, an outlet channel for pumping effluent gases away from the volume between the window and the mask, and seals for inhibiting the flow of process gases and effluent gases to undesired locations. A method of performing TFE is provided, including placing a substrate under the mask of the above described process kit, flowing process gases into the process kit, and activating some of the process gases into reactive species by means of an energy source within a processing chamber.
摘要翻译：本公开涉及薄膜封装（TFE）的方法和装置。提供TFE的工艺套件。处理套件是包括窗口，与窗口平行的掩模和框架的组件。工艺组件还包括用于将工艺气体流入窗口和面罩之间的体积的入口通道，用于将流出气体从窗口和面罩之间的体积排出的出口通道，以及用于抑制工艺气体流动的密封件，流出气体到不需要的位置。提供了一种执行TFE的方法，包括将基底放置在上述处理试剂盒的掩模之下，将工艺气体流入工艺试剂盒，并通过处理室内的能量源将一些工艺气体活化成反应性物质。

6. 发明申请

US20160284523A1 Hydrofluoroolefin Etching Gas Mixtures 审中-公开
标题翻译：氢氟烯烃蚀刻气体混合物
公开(公告)号：US20160284523A1
公开(公告)日：2016-09-29
申请号：US14777865
申请日：2014-03-28
申请人： The Chemours Company FC, LLC
发明人： GARY LOH , MARIO JOSEPH NAPPA , HAO-CHUN LEE , TAI-CHEN LEE
IPC分类号： H01J37/32 , C11D7/30 , C09K13/00 , C23C16/44
CPC分类号： H01J37/32862 , C09K13/00 , C11D7/30 , C23C16/4405 , H01J37/32357 , H01J37/32853 , H01J2237/334
摘要： The present invention relates to hydrofluorolefin compositions useful for removing surface deposits in CVD chambers, and relates to methods for removing surface deposits from the interior of a chemical vapor deposition chamber by using an activated gas mixture created by activating a gas mixture in the chamber or in a remote chamber, where the gas mixture comprises a hydrofluorolefin.
摘要翻译：本发明涉及用于除去CVD室中的表面沉积物的氢氟烯烃组合物，并且涉及通过使用通过活化气室中的气体混合物或在室内或远程室，其中气体混合物包含氢氟烯烃。

7. 发明申请

US20160216100A1 APPARATUS FOR MEASURING CONTAMINATION OF PLASMA GENERATING DEVICE 审中-公开
标题翻译：用于测量等离子体发生装置的污染的装置
公开(公告)号：US20160216100A1
公开(公告)日：2016-07-28
申请号：US14799810
申请日：2015-07-15
申请人： Samsung Display Co., Ltd.
发明人： Jihun Kim , Dongil Kim
IPC分类号： G01B7/06 , C23C16/52 , C23C16/50
CPC分类号： G01B7/085 , C23C14/545 , C23C16/50 , C23C16/52 , H01J37/32477 , H01J37/32853 , H01J37/32871 , H01J37/32917 , H01J37/32935
摘要： An apparatus for measuring contamination of a plasma generating includes: a chamber; a susceptor provided in the chamber and on which a substrate is mounted; a plasma generator configured to generate plasma in the chamber; an inner jacket provided in the chamber and surrounding a space where the plasma is generated; a V-I probe electrically connected to the inner jacket and configured to detect a phase difference between a voltage and a current; a power supply unit configured to supply the voltage to the inner jacket through a blocking capacitor; and a monitor connected to the V-I probe and configured to store and display measurement data. A thickness of a contamination layer on a surface of the inner jacket is determined by analyzing a signal obtained by supplying the voltage to the inner jacket.
摘要翻译：用于测量等离子体产生污染的装置包括：腔室; 设置在所述室中并且其上安装有基板的感受体; 等离子体发生器，其被配置为在所述室中产生等离子体; 设置在腔室中并围绕产生等离子体的空间的内护套; 电连接到所述内护套并被配置为检测电压和电流之间的相位差的V-I探头; 电源单元，被配置为通过隔离电容器将电压提供给所述内护套; 以及连接到V-I探头并被配置为存储和显示测量数据的监视器。通过分析通过向内套提供电压获得的信号来确定内套表面上的污染层的厚度。

8. 发明授权

US09382614B2 Defect reduction in meta-mode sputter coatings 有权
标题翻译：元模式溅射镀层的缺陷减少
公开(公告)号：US09382614B2
公开(公告)日：2016-07-05
申请号：US14479207
申请日：2014-09-05
申请人： Apple Inc.
发明人： John Z. Zhong , Sunggu Kang , Wookyung Bae
IPC分类号： C23C14/34 , H01J37/34 , C23C14/58
CPC分类号： C23C14/5873 , C23C14/564 , C23C14/5846 , H01J37/32449 , H01J37/32853 , H01J37/32871 , H01J37/3476 , H01J37/3488
摘要： Sputter deposition systems and methods for depositing film coatings on one or more substrates are disclosed. The systems and methods are used to prevent or reduce an amount of defects within a deposited film. The methods involve removing defect-related particles that are formed during a deposition process from certain regions of the sputter deposition system and preventing the defect-related particles from detrimentally affecting the quality of the deposited film. In particular embodiments, methods involve creating a flow of gas from a deposition region to a particle collection region the sputter deposition system such that the defect-related particles are entrained within the flow of gas and away from the deposition region. In particular embodiments, the sputter deposition system is a meta-mode sputter deposition system.
摘要翻译：公开了用于在一个或多个基底上沉积膜涂层的溅射沉积系统和方法。系统和方法用于防止或减少沉积膜内的缺陷量。所述方法包括去除在溅射沉积系统的某些区域的沉积过程期间形成的缺陷相关颗粒，并防止缺陷相关颗粒不利地影响沉积膜的质量。在具体实施方案中，方法包括从沉积区域到溅射沉积系统的颗粒收集区域产生气体流，使得缺陷相关颗粒被夹带在气体流中并远离沉积区域。在特定实施例中，溅射沉积系统是元模式溅射沉积系统。

9. 发明申请

US20160005666A1 ENDPOINT BOOSTER SYSTEMS AND METHODS FOR OPTICAL ENDPOINT DETECTION 有权
标题翻译：端点升压系统和光端点检测方法
公开(公告)号：US20160005666A1
公开(公告)日：2016-01-07
申请号：US14724687
申请日：2015-05-28
申请人： Skyworks Solutions, Inc.
发明人： Elena Becerra Woodard , Daniel Kwadwo Amponsah Berkoh , Kelly Yuji Kimura
IPC分类号： H01L21/66 , G01J3/443 , G01J3/02 , H01L21/3065
CPC分类号： H01L22/26 , G01J3/0218 , G01J3/443 , H01J37/32853 , H01J37/3288 , H01J37/32963 , H01L21/3065
摘要： An endpoint booster transports an optical signal from inside of a plasma etch chamber through a viewport to an optical cable outside of the plasma etch chamber. The optical signal is analyzed to determine an endpoint of a plasma process. The endpoint booster inhibits process byproducts from accumulating on the viewport during the plasma process, which increases the time between chamber cleanings. The reduction in chamber downtime for cleaning increases production throughput.
摘要翻译：端点升压器将等离子体蚀刻室内的光信号通过视口输送到等离子体蚀刻室外的光缆。分析光信号以确定等离子体工艺的终点。端点增强器抑制过程副产物在等离子体处理过程中积聚在视口上，这增加了室清洁之间的时间。清洁室停机时间的减少增加了生产量。

10. 发明申请

US20150329968A1 IN-LINE PLASMA CVD APPARATUS 审中-公开
标题翻译：在线等离子体CVD装置
公开(公告)号：US20150329968A1
公开(公告)日：2015-11-19
申请号：US14440728
申请日：2013-12-12
申请人： Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)
发明人： Hiroshi Tamagaki , Junji Haga
IPC分类号： C23C16/54 , C23C16/44 , C23C16/458 , C23C16/503
CPC分类号： C23C16/54 , C23C16/26 , C23C16/4401 , C23C16/4409 , C23C16/4412 , C23C16/4584 , C23C16/4588 , C23C16/503 , C23C16/505 , H01J37/32568 , H01J37/32706 , H01J37/32715 , H01J37/32779 , H01J37/32853 , H01J37/32899 , H01L21/67173 , H01L21/67201 , H01L21/67754 , H01L21/6776
摘要： Provided is an in-line plasma CVD apparatus (100) capable of performing a deposition process at a high production efficiency while maintaining stable deposition conditions, without spending time and energy on cleaning and the like even when in use for a long time. This plasma CVD apparatus (100) is equipped with a deposition chamber (1) and load-lock chambers (20, 30) which are separate from the deposition chamber (1). The apparatus (100) is of the in-line-type for conveying a substrate between these chambers and producing a film on the substrate. The deposition chamber (1) is equipped with a vacuum chamber (2), a vacuum exhaust means (3) for discharging the air inside the vacuum chamber (2), a gas supply unit (9) for supplying a source gas into the vacuum chamber (2), and a plasma generation power supply (10) for generating plasma inside the vacuum chamber (2). Substrates in the deposition chamber (1) are divided into a first group (18) connected to one pole of the plasma generation power supply (10), and a second group (19) connected to the other pole of the plasma generation power supply (10). The plasma is produced between the first group (18) and the second group (19) which have different polarities from one another.
摘要翻译：提供一种在保持稳定的沉积条件下能够以高生产效率进行沉积处理的在线等离子体CVD装置（100），即使长时间使用也不会花费时间和能量进行清洁等。该等离子体CVD装置（100）装备有与沉积室（1）分离的沉积室（1）和装载锁定室（20,30）。该装置（100）具有在这些室之间输送基板的直列式，并在基板上产生薄膜。沉积室（1）配备有真空室（2），用于排出真空室（2）内的空气的真空排气装置（3），用于将源气体供应到真空中的气体供应单元（9）室（2）和用于在真空室（2）内产生等离子体的等离子体发生电源（10）。沉积室（1）中的基板被分成连接到等离子体发生电源（10）的一个极的第一组（18）和连接到等离子体发生电源的另一个极的第二组（19） 10）。在具有彼此不同极性的第一组（18）和第二组（19）之间产生等离子体。

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