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11. 发明授权

US5352908A Diamond Schottky diode with oxygen 失效
标题翻译：金刚石肖特基二极管与氧气
公开(公告)号：US5352908A
公开(公告)日：1994-10-04
申请号：US145307
申请日：1993-11-03
申请人： Koji Kobashi , Koichi Miyata , Kozo Nishimura
发明人： Koji Kobashi , Koichi Miyata , Kozo Nishimura
IPC分类号： H01L29/16 , H01L29/47 , H01L29/86 , H01L29/872 , H01L29/48
CPC分类号： H01L29/1602 , H01L29/872
摘要： A diamond Schottky diode including an electrically conductive substrate, a multi-layer structure of a semiconducting diamond layer and an insulating diamond layer, and a metal electrode. This diode has a greater potential barrier under a reversed bias and hence exhibits better rectifying characteristics with a smaller reverse current.
摘要翻译：包括导电衬底，半导体金刚石层和绝缘金刚石层的多层结构的金刚石肖特基二极管和金属电极。该二极管在反向偏置下具有更大的势垒，因此具有较小的反向电流的整流特性。

12. 发明授权

US5358754A Method for forming diamond films by vapor phase synthesis 失效
标题翻译：通过气相合成形成金刚石膜的方法
公开(公告)号：US5358754A
公开(公告)日：1994-10-25
申请号：US908084
申请日：1992-07-06
申请人： Koji Kobashi , Shigeaki Miyauchi , Kozo Nishimura , Kazuo Kumagai , Rie Kato
发明人： Koji Kobashi , Shigeaki Miyauchi , Kozo Nishimura , Kazuo Kumagai , Rie Kato
IPC分类号： C23C16/26 , C23C16/27 , C23C16/46 , C23C16/50 , C23C16/503 , C30B29/04 , B05D3/06
CPC分类号： C23C16/272 , C23C16/277 , C23C16/503
摘要： A method for forming diamond films by vapor phase synthesis comprising a process of forming the diamond films on a substrate by direct current discharge plasma, in an atmosphere of a reaction gas including a gas containing at least carbon and hydrogen, or in an atmosphere of a mixed gas containing at least a carbon-containing gas and a hydrogen gas, at a gas pressure between 0.1 and 5 Torr and a substrate temperature between 300.degree. and 1000.degree. C.
摘要翻译：通过气相合成形成金刚石膜的方法包括通过直流放电等离子体在包括至少含有碳和氢的气体的反应气体的气氛中或在气相中的气氛中在基板上形成金刚石膜的方法含有至少含碳气体和氢气的混合气体，气体压力为0.1〜5托，基板温度为300〜1000℃。

13. 发明授权

US5888846A Method for microfabricating diamond 失效
标题翻译：金刚石微加工方法
公开(公告)号：US5888846A
公开(公告)日：1999-03-30
申请号：US86561
申请日：1998-05-29
申请人： Koichi Miyata , Koji Kobashi , Kohei Suzuki , Toshihisa Nozawa
发明人： Koichi Miyata , Koji Kobashi , Kohei Suzuki , Toshihisa Nozawa
IPC分类号： C30B29/04 , B81C1/00 , C30B33/08 , H01L21/04 , H01L21/00 , H01L21/335 , H01L21/84
CPC分类号： H01L21/042
摘要： A method for microfabricating diamond includes the steps of: forming a resist layer composed of a ladder silicone spin-on glass material on the surface of diamond; performing lithography, in which the resist layer is irradiated with an electron beam or an ion beam in a given pattern; developing the resist layer to form the given pattern; and etching diamond by an ECR plasma etching method or a high-frequency plasma etching method.
摘要翻译：金刚石微制造方法包括以下步骤：在金刚石的表面上形成由硅胶旋涂玻璃材料构成的抗蚀剂层; 其中以给定图案用电子束或离子束照射抗蚀剂层; 显影抗蚀剂层以形成给定的图案; 并通过ECR等离子体蚀刻方法或高频等离子体蚀刻方法蚀刻金刚石。

14. 发明授权

US5757344A Cold cathode emitter element 失效
标题翻译：冷阴极发射体元件
公开(公告)号：US5757344A
公开(公告)日：1998-05-26
申请号：US953847
申请日：1992-09-30
申请人： Koichi Miyata , Kozo Nishimura , Koji Kobashi
发明人： Koichi Miyata , Kozo Nishimura , Koji Kobashi
IPC分类号： H01L49/00 , H01J1/304 , H01J9/02 , H01J1/14
CPC分类号： H01J3/022 , H01J1/3042 , H01J9/025 , H01J2201/30457
摘要： Disclosed is planar and vertical cold cathode emitter elements including an semiconducting diamond emitter portion having a high thermal resistance and a high breakdown voltage, thereby suppressing the deterioration of the electron emission characteristics and enabling the operation with a high electric power.
摘要翻译：公开了包括具有高热阻和高击穿电压的半导体金刚石发射极部分的平面和垂直冷阴极发射体元件，从而抑制电子发射特性的劣化并且能够以高功率进行操作。

15. 发明授权

US5523160A Highly-oriented diamond film 失效
标题翻译：高度定向的金刚石薄膜
公开(公告)号：US5523160A
公开(公告)日：1996-06-04
申请号：US466922
申请日：1995-06-06
申请人： Koji Kobashi , Kozo Nishimura , Koichi Miyata , Takeshi Tachibana , Brian R. Stoner
发明人： Koji Kobashi , Kozo Nishimura , Koichi Miyata , Takeshi Tachibana , Brian R. Stoner
IPC分类号： C30B25/02 , C30B29/04 , H01L21/205 , H01L29/04 , H01L29/16 , H01L41/08
CPC分类号： H01L29/1602 , H01L21/02381 , H01L21/02527 , H01L21/02573 , H01L21/02595 , H01L21/02609 , H01L21/0262 , H01L29/045 , Y10T428/24744 , Y10T428/30
摘要： The highly-oriented diamond film is a diamond film formed by chemical vapor deposition, with at least 95% of its area consisting of either (100) or (111) crystal planes, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of the Euler angles {.alpha., .beta., .gamma.} between the adjacent crystals satisfying (.vertline..DELTA..alpha..vertline..ltoreq.1.degree., .vertline..DELTA..beta..vertline..ltoreq.1.degree. and .vertline..DELTA..gamma..vertline..ltoreq.1.degree.) simultaneously. Thus obtained highly-oriented diamond film has few grain boundaries and high carrier mobility. And the area of the diamond film can be large.
摘要翻译：高度取向的金刚石膜是通过化学气相沉积形成的金刚石膜，其面积的至少95％由（100）或（111）晶面组成，并且差异{DELTAα，DELTAβ，DELTAγ} 的相邻晶体之间的欧拉角{α，β，γ}同时满足（| DELTAα|

16. 发明授权

US5353737A Method for forming boron-doped semiconducting diamond films 失效
标题翻译：硼掺杂半导体金刚石薄膜的形成方法
公开(公告)号：US5353737A
公开(公告)日：1994-10-11
申请号：US46804
申请日：1993-04-16
申请人： Hisashi Koyama , Koichi Miyata , Koji Kobashi
发明人： Hisashi Koyama , Koichi Miyata , Koji Kobashi
IPC分类号： H01L21/20 , C23C16/27 , H01L21/205 , C30B29/04
CPC分类号： C23C16/278 , C23C16/274 , H01L21/02381 , H01L21/02527 , H01L21/02579 , H01L21/0262
摘要： Disclosed is a method for forming a diamond film on a substrate by vapor-phase synthesis using a reaction gas which contains B.sub.2 H.sub.6 and O.sub.2 with a gas concentration ratio (volume %) of ([B.sub.2 H.sub.6 ]/[O.sub.2 ]).gtoreq.1.times.10.sup.-4 in addition to a hydrocarbon gas in hydrogen. By this invention, it is possible to form p-type semiconducting diamond films having an excellent crystallinity and desired electric characteristics.
摘要翻译：公开了使用含有（[B2H6] / [O 2]）> / = 1×10 -3的气体浓度比（体积％）的含有B 2 H 6和O 2的反应气体通过气相合成在基板上形成金刚石膜的方法， 4除氢气中的烃气体外。通过本发明，可以形成具有优异结晶度和所需电特性的p型半导体金刚石膜。

17. 发明授权

US5309000A Diamond films with heat-resisting ohmic electrodes 失效
标题翻译：具有耐热欧姆电极的金刚石薄膜
公开(公告)号：US5309000A
公开(公告)日：1994-05-03
申请号：US50614
申请日：1993-04-22
申请人： Kimitsugu Saito , Koji Kobashi , Kozo Nishimura , Koichi Miyata
发明人： Kimitsugu Saito , Koji Kobashi , Kozo Nishimura , Koichi Miyata
IPC分类号： C30B29/04 , H01L21/04 , H01L21/28 , H01L29/16 , H01L29/40 , H01L29/45 , H01L23/48
CPC分类号： H01L29/1602 , H01L21/0415 , H01L24/05 , H01L29/45 , H01L29/66045 , H01L2224/04042 , H01L2224/48463 , H01L2924/14
摘要： A is a heat-resisting ohmic electrode on diamond film, including: a p-type semiconducting diamond film; a boron-doped diamond layer provided on the semiconducting diamond film; and an electrode element made of p-type Si selectively formed on the boron-doped diamond layer; wherein the boron concentration in the boron-doped diamond layer is from 1.0.times.10.sup.19 to 1.8.times.10.sup.23 cm.sup.-3, and at least one impurity selected from the group consisting of B, Al and Ga is doped in the electrode element with a concentration from 1.0.times.10.sup.20 to 5.0.times.10.sup.22 cm.sup.-3. The ohmic electrode on diamond film is applicable for electronic devices operative at high temperature.
摘要翻译： A是金刚石膜上的耐热欧姆电极，包括：p型半导体金刚石膜; 设置在半导体金刚石膜上的掺硼金刚石层; 以及选择性地形成在掺杂硼的金刚石层上的由p型Si制成的电极元件; 其中硼掺杂金刚石层中的硼浓度为1.0×1019至1.8×10 23 cm -3，并且在电极元件中掺杂选自B，Al和Ga中的至少一种杂质，浓度为1.0×10 20 至5.0×1022cm-3。金刚石膜上的欧姆电极适用于在高温下工作的电子器件。

18. 发明授权

US5814149A Methods for manufacturing monocrystalline diamond films 失效
标题翻译：制造单晶金刚石薄膜的方法
公开(公告)号：US5814149A
公开(公告)日：1998-09-29
申请号：US560077
申请日：1995-11-17
申请人： Yoshihiro Shintani , Takeshi Tachibana , Kozo Nishimura , Koichi Miyata , Yoshihiro Yokota , Koji Kobashi
发明人： Yoshihiro Shintani , Takeshi Tachibana , Kozo Nishimura , Koichi Miyata , Yoshihiro Yokota , Koji Kobashi
IPC分类号： C30B29/04 , C23C16/02 , C23C16/26 , C23C16/27 , C30B25/02
CPC分类号： C23C16/271 , C23C16/0263 , C23C16/0281 , C23C16/272 , C23C16/274 , C23C16/275 , C30B25/02 , C30B29/04
摘要： A method is related to grow monocrystalline diamond films by chemical vapor deposition on large area at low cost. The substrate materials are either bulk single crystals of Pt or its alloys, or thin films of those materials deposited on suitable supporting materials. The surfaces of those substrates must be either (111) or (001), or must have domain structures consisting of (111) or (001) crystal surfaces. Those surfaces can be inclined within .+-.10 degree angles from (111) or (001). In order to increase the nucleation density of diamond, the substrate surface can be scratched by buff and/or ultrasonic polishing, or carbon implanted. Monocrystalline diamond films can be grown even though the substrate surfaces have been roughened. Plasma cleaning of substrate surfaces and annealing of Pt or its alloy films are effective in growing high quality monocrystalline diamond films.
摘要翻译：一种方法涉及通过化学气相沉积在大面积上以低成本生长单晶金刚石膜。衬底材料是Pt或其合金的块状单晶，或者是沉积在合适的支撑材料上的那些材料的薄膜。这些基材的表面必须是（111）或（001），或者必须具有由（111）或（001）晶体表面组成的畴结构。那些表面可以从（111）或（001）的+/- 10度角倾斜。为了增加金刚石的成核密度，可以通过抛光和/或超声波抛光或植入碳来划伤基底表面。即使衬底表面被粗糙化，也可以生长单晶金刚石膜。衬底表面的等离子体清洗和Pt或其合金膜的退火在生长高品质单晶金刚石膜方面是有效的。

19. 发明授权

US5173761A Semiconducting polycrystalline diamond electronic devices employing an insulating diamond layer 失效
标题翻译：使用绝缘金刚石层的半导体多晶金刚石电子器件
公开(公告)号：US5173761A
公开(公告)日：1992-12-22
申请号：US646848
申请日：1991-01-28
申请人： David L. Dreifus , Kumar Das , Koichi Miyata , Koji Kobashi
发明人： David L. Dreifus , Kumar Das , Koichi Miyata , Koji Kobashi
IPC分类号： C23C14/06 , C30B29/04 , H01L21/04 , H01L21/205 , H01L21/265 , H01L29/16 , H01L29/78 , H01L29/80 , H01L29/861
CPC分类号： H01L29/1602 , H01L29/6603 , H01L29/66045 , Y10S257/921
摘要： A method and apparatus for contructing diamond semiconductor structures made of polycrystalline diamond thin films is disclosed. The use of a polycrystalline diamond deposition on a substrate material provides an advantage that any substrate material may be used and the ability to use polycrystalline diamond as a material is brought about through the use of an undoped diamond layer acting as an insulating layer which is formed on a boron-doped layer. Because of the structure, ion implantation can be employed to reduce the ohmic contact resistance. The ion implantation also provides that the entire structure can be made using a deep implant to form a channel layer which allows the insulating gate structure to be formed as an integral part of the device. The buried channel can be doped through the use of several implantation steps through the insulating undoped layer. As a result, the process and device is able to provide active polycrystallline diamond devices which have excellent resistance and reverse voltage characteristics while having an increased temperature capacity and increased range of operational environmental conditions when contrasted with the silicon technology. Furthermore with the disclosed process and devices, there is no requirement for a single crystal diamond substrate.
摘要翻译：公开了一种用于构造由多晶金刚石薄膜制成的金刚石半导体结构的方法和装置。在衬底材料上使用多晶金刚石沉积提供了可以使用任何衬底材料的优点，并且通过使用形成绝缘层的未掺杂的金刚石层来形成使用多晶金刚石作为材料的能力在硼掺杂层上。由于结构，可以使用离子注入来降低欧姆接触电阻。离子注入还提供了整个结构可以使用深度注入来形成沟道层，其允许绝缘栅极结构形成为器件的组成部分。可以通过使用几个注入步骤穿过绝缘未掺杂层来掺杂掩埋沟道。因此，与硅技术相比，该工艺和器件能够提供具有优异的电阻和反向电压特性的活性多晶金刚石器件，同时具有增加的温度容量和增加的操作环境条件的范围。此外，通过公开的方法和装置，不需要单晶金刚石基底。

20. 发明授权

US07067903B2 Heat spreader and semiconductor device and package using the same 失效
标题翻译：散热器和半导体器件和封装使用相同
公开(公告)号：US07067903B2
公开(公告)日：2006-06-27
申请号：US10701499
申请日：2003-11-06
申请人： Takeshi Tachibana , Kazushi Hayashi , Kenichi Inoue , Yoshihiro Yokota , Koji Kobashi , Nobuyuki Kawakami , Takashi Kobori
发明人： Takeshi Tachibana , Kazushi Hayashi , Kenichi Inoue , Yoshihiro Yokota , Koji Kobashi , Nobuyuki Kawakami , Takashi Kobori
IPC分类号： H01L29/06 , H01L23/495 , H01L23/06 , H01L23/10
CPC分类号： H01L23/3732 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A semiconductor device and package has a heat spreader directly disposed on the reverse surface of the semiconductor device. This heat spreader includes a diamond layer or a layer containing diamond and ceramics such as silicon carbide and aluminum nitride. The heat spreader is directly formed on a substrate for the semiconductor device. In particular, the heat spreader is composed of a diamond layer and one or two metal or ceramic members, which are bonded to the diamond layer with one or two polymer adhesive layers. This diamond layer has a fiber structure across the thickness or a microcrystalline structure. Cilia are formed on a surface of the diamond layer facing the one or two metal or ceramic members.
摘要翻译：半导体器件和封装具有直接设置在半导体器件的反面上的散热器。该散热器包括金刚石层或含有金刚石和陶瓷的层，例如碳化硅和氮化铝。散热器直接形成在用于半导体器件的衬底上。特别地，散热器由金刚石层和一个或两个金属或陶瓷构件组成，其通过一个或两个聚合物粘合剂层结合到金刚石层。该金刚石层具有穿过厚度或微晶结构的纤维结构。在金刚石层的面向一个或两个金属或陶瓷构件的表面上形成纤毛。

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