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1. 发明授权

US08299614B2 Interconnection structure, a thin film transistor substrate, and a manufacturing method thereof, as well as a display device 有权
标题翻译：互连结构，薄膜晶体管基板及其制造方法以及显示装置
公开(公告)号：US08299614B2
公开(公告)日：2012-10-30
申请号：US12936572
申请日：2009-04-17
申请人： Nobuyuki Kawakami , Mototaka Ochi , Aya Miki , Shinya Morita , Yoshihiro Yokota , Shinya Fukuma , Hiroshi Goto
发明人： Nobuyuki Kawakami , Mototaka Ochi , Aya Miki , Shinya Morita , Yoshihiro Yokota , Shinya Fukuma , Hiroshi Goto
IPC分类号： H01L23/48
CPC分类号： H01L21/26506 , H01L21/2236 , H01L21/76829 , H01L21/76838 , H01L27/124 , H01L29/458 , H01L29/66575 , H01L2924/0002 , H01L2924/00
摘要： An interconnection structure, containing a substrate and, in the following order from a side of the substrate: (I) a semiconductor layer; (II) a multilayer structure including (II-a) a first layer containing at least one type of an element selected from the group consisting of nitrogen, carbon and fluorine and (II-b) an Al—Si diffusion layer containing Al and Si; and (III) an Al film of pure Al or an Al alloy, wherein the at least one of element selected from the group consisting of nitrogen, carbon, and fluorine in the first layer is bonded with Si contained in the semiconductor layer.
摘要翻译：一种互连结构，其包含基板，并且从所述基板的侧面按以下顺序：（I）半导体层; （II）包括（II-a）含有选自氮，碳和氟中的至少一种元素的第一层和（II-b）含有Al和Si的Al-Si扩散层的多层结构 ; 和（III）纯Al或Al合金的Al膜，其中在第一层中选自氮，碳和氟的至少一种元素与包含在半导体层中的Si结合。

2. 发明授权

US08217397B2 Thin film transistor substrate and display device 有权
标题翻译：薄膜晶体管基板和显示装置
公开(公告)号：US08217397B2
公开(公告)日：2012-07-10
申请号：US12812913
申请日：2009-01-15
申请人： Mototaka Ochi , Nobuyuki Kawakami , Katsufumi Tomihisa , Hiroshi Goto
发明人： Mototaka Ochi , Nobuyuki Kawakami , Katsufumi Tomihisa , Hiroshi Goto
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036
CPC分类号： H01L29/458
摘要： The present invention provides a thin film transistor substrate and a display device in which a decrease in the dry etching rate of a source electrode and drain electrode is not caused; no etching residues are generated; and a barrier metal can be eliminated between a semiconductor layer and metal wires such as the source and drain electrodes. The present invention is a thin film transistor substrate having a semiconductor layer 1, a source electrode 2, a drain electrode 3, and a transparent conductive film 4, in which the source electrode 2 and drain electrode 3 are formed by patterning by means of dry etching and comprises an Al alloy thin film comprising 0.1 to 1.5 atom % of Si and/or Ge, 0.1 to 3.0 atom % of Ni and/or Co, and 0.1 to 0.5 atom % of La and/or Nd, and the thin film transistor is directly connected with the semiconductor layer 1.
摘要翻译：本发明提供一种薄膜晶体管基板和显示装置，其中不会引起源电极和漏电极的干蚀刻速率的降低; 不产生蚀刻残留物; 并且可以在半导体层和诸如源极和漏极之类的金属线之间消除阻挡金属。本发明是一种具有半导体层1，源电极2，漏电极3和透明导电膜4的薄膜晶体管基板，其中源电极2和漏电极3通过干式图案形成并且包括包含0.1至1.5原子％的Si和/或Ge，0.1至3.0原子％的Ni和/或Co，以及0.1至0.5原子％的La和/或Nd的Al合金薄膜，并且薄膜晶体管与半导体层1直接连接。

3. 发明授权

US08057882B2 Membrane structure element and method for manufacturing same 有权
标题翻译：膜结构元件及其制造方法
公开(公告)号：US08057882B2
公开(公告)日：2011-11-15
申请号：US12225670
申请日：2007-03-28
申请人： Takayuki Hirano , Nobuyuki Kawakami , Masato Kannaka
发明人： Takayuki Hirano , Nobuyuki Kawakami , Masato Kannaka
IPC分类号： B32B3/00 , G01P15/08 , G01L9/08 , G01F1/692
CPC分类号： G01F1/692 , B81B2201/0278 , B81B2203/0127 , B81C1/00666 , B81C2201/0169 , B81C2201/0178 , C23C16/402 , C23C16/56 , Y10T428/24488 , Y10T428/24612
摘要： It is intended to provide a membrane structure element that can be easily manufactured, has an excellent insulating property and high quality; and a method for manufacturing the membrane structure element. The manufacturing method is for manufacturing a membrane structure element including a membrane formed of a silicon oxide film and a substrate which supports the membrane in a hollow state by supporting a part of a periphery of the membrane. The method includes: a film formation step of forming a heat-shrinkable silicon oxide film 13 on a surface of a silicon substrate 2 by plasma CVD method; a heat treatment step of performing a heat treatment to cause the thermal shrinkage of the silicon oxide film 13 formed on the substrate 1; and a removal step of removing a part of the substrate 2 in such a manner that a membrane-corresponding part of the silicon oxide film 13 is supported as a membrane in a hollow state with respect to the substrate 2 to form a recessed part 4.
摘要翻译：本发明提供可以容易地制造，具有优异的绝缘性和高质量的膜结构元件; 和膜结构元件的制造方法。该制造方法是用于制造包括由氧化硅膜形成的膜的膜结构元件和通过支撑膜的周边的一部分而将膜支撑在中空状态的基板。该方法包括：通过等离子体CVD法在硅衬底2的表面上形成热收缩氧化硅膜13的成膜步骤; 对形成在基板1上的氧化硅膜13的热收缩进行热处理的热处理工序; 以及去除基板2的一部分的去除步骤，使得氧化硅膜13的膜相应部分作为相对于基板2的中空状态的膜被支撑以形成凹部4。

4. 发明申请

US20110024761A1 INTERCONNECTION STRUCTURE, A THIN FILM TRANSISTOR SUBSTRATE, AND A MANUFACTURING METHOD THEREOF, AS WELL AS A DISPLAY DEVICE 有权
标题翻译：互连结构，薄膜晶体管基板及其制造方法，作为显示器件
公开(公告)号：US20110024761A1
公开(公告)日：2011-02-03
申请号：US12936572
申请日：2009-04-17
申请人： Nobuyuki Kawakami , Mototaka Ochi , Aya Miki , Shinya Morita , Yoshihiro Yokota , Shinya Fukuma , Hiroshi Goto
发明人： Nobuyuki Kawakami , Mototaka Ochi , Aya Miki , Shinya Morita , Yoshihiro Yokota , Shinya Fukuma , Hiroshi Goto
IPC分类号： H01L33/16 , H01L21/20
CPC分类号： H01L21/26506 , H01L21/2236 , H01L21/76829 , H01L21/76838 , H01L27/124 , H01L29/458 , H01L29/66575 , H01L2924/0002 , H01L2924/00
摘要： Provided is a direct contact technology by which a barrier metal layer between an Al alloy interconnection composed of pure Al or an Al alloy and a semiconductor layer can be eliminated and the Al alloy interconnection can be directly and surely connected to the semiconductor layer within a wide process margin. In an interconnection structure, the semiconductor layer, and the Al alloy film composed of the pure Al or the Al alloy are provided on the substrate in this order from the substrate side. A multilayer structure of an (N, C, F) layer containing at least one type of an element selected from among a group composed of nitrogen, carbon and fluorine, and an Al—Si diffusion layer containing Al and Si is included in this order from the substrate side, between the semiconductor layer and the Al alloy film. At least the one type of the element, i.e., nitrogen, carbon or fluorine contained in the (N, C, F) layer is bonded with Si contained in the semiconductor layer.
摘要翻译：提供了一种直接接触技术，通过该技术可以消除由纯Al或Al合金构成的Al合金互连与半导体层之间的阻挡金属层，并且Al合金互连可以在宽的范围内直接且可靠地连接到半导体层过程保证金在互连结构中，从衬底侧依次从衬底上提供由纯Al或Al合金构成的半导体层和Al合金膜。包含选自由氮，碳和氟组成的组中的至少一种元素和包含Al和Si的Al-Si扩散层的（N，C，F）层的多层结构按此顺序包括从衬底侧在半导体层和Al合金膜之间。（N，C，F）层中所含的至少一种元素即氮，碳或氟与包含在半导体层中的Si键合。

5. 发明授权

US07064352B2 Diamond semiconductor device and method for manufacturing the same 失效
标题翻译：金刚石半导体器件及其制造方法
公开(公告)号：US07064352B2
公开(公告)日：2006-06-20
申请号：US11003510
申请日：2004-12-06
申请人： Yoshihiro Yokota , Nobuyuki Kawakami , Takeshi Tachibana , Kazushi Hayashi
发明人： Yoshihiro Yokota , Nobuyuki Kawakami , Takeshi Tachibana , Kazushi Hayashi
IPC分类号： H01L31/312 , H01L21/00
CPC分类号： H01L29/1602 , H01L29/78
摘要： A diamond semiconductor device includes a substrate made of single crystal diamond; a first diamond layer, placed on the substrate, containing an impurity; a second diamond layer containing the impurity, the second diamond layer being placed on the substrate and spaced from the first diamond layer; and a third diamond layer which has a impurity content less than that of the first and second diamond layers, which acts as a channel region, and through which charges are transferred from the first diamond layer to the second diamond layer. The first and second diamond layers have a first and a second end portion, respectively, facing each other with a space located therebetween. The first and second end portions have slopes epitaxially formed depending on the orientation of the substrate. The third diamond layer lies over the slopes and a section of the substrate that is located under the space.
摘要翻译：金刚石半导体器件包括由单晶金刚石制成的衬底; 第一金刚石层，放置在衬底上，含有杂质; 含有所述杂质的第二金刚石层，所述第二金刚石层被放置在所述基板上并与所述第一金刚石层间隔开; 以及第三金刚石层，其杂质含量小于作为沟道区的第一和第二金刚石层的杂质含量，并且电荷从第一金刚石层转移到第二金刚石层。第一和第二金刚石层具有彼此面对的第一和第二端部，其间具有空间。第一和第二端部具有取决于衬底的取向外延形成的斜面。第三金刚石层位于斜坡上方，并且位于该空间下方的基底部分。

6. 发明申请

US20060050003A1 Feed antenna including dielectric waveguide 有权
标题翻译：馈电天线包括介质波导
公开(公告)号：US20060050003A1
公开(公告)日：2006-03-09
申请号：US11000975
申请日：2004-12-02
申请人： Masakatsu Maruyama , Chitaka Manabe , Yoshito Fukumoto , Nobuyuki Kawakami , Takayuki Hirano
发明人： Masakatsu Maruyama , Chitaka Manabe , Yoshito Fukumoto , Nobuyuki Kawakami , Takayuki Hirano
IPC分类号： H01Q13/00
CPC分类号： H01Q9/045 , H01Q9/0407
摘要： A feed antenna includes a pair of conductive members, a dielectric waveguide placed therebetween, a dielectric member that is placed between the conductive members and located close to the dielectric waveguide, and a plurality of dielectric binding sections for binding the dielectric waveguide to the dielectric member. One of the conductive members has a plurality of openings.
摘要翻译：馈电天线包括一对导电构件，介于其间的电介质波导，介于导电构件之间并位于电介质波导附近的电介质构件，以及用于将电介质波导结合到电介质构件。导电构件中的一个具有多个开口。

7. 发明申请

US20050181122A1 Ultraviolet sensor and method for manufacturing the same 失效
标题翻译：紫外线传感器及其制造方法
公开(公告)号：US20050181122A1
公开(公告)日：2005-08-18
申请号：US11057603
申请日：2005-02-15
申请人： Kazushi Hayashi , Takeshi Tachibana , Yoshihiro Yokota , Nobuyuki Kawakami
发明人： Kazushi Hayashi , Takeshi Tachibana , Yoshihiro Yokota , Nobuyuki Kawakami
IPC分类号： H01L31/08 , G01J1/02 , G01J1/42 , H01L31/101 , C23C14/00
CPC分类号： G01J1/429 , G01J2001/0276 , H01L31/028 , H01L31/09 , H01L31/1085 , H01L2224/45144 , H01L2224/48091 , H01L2924/10253 , H01L2924/12032 , Y02E10/547 , H01L2924/00014 , H01L2924/00
摘要： An ultraviolet sensor includes a substrate; a diamond layer, placed on the substrate, functioning as a detector; and at least one pair of surface electrodes arranged on the diamond layer. The diamond layer has a detecting region present at the surface thereof, the detecting region has at least one sub-region exposed from the surface electrodes, and the sub-region has a covering layer, made of oxide or fluoride, lying thereon. A method for manufacturing the ultraviolet sensor includes a step of forming a diamond layer, functioning as a detector, on a substrate; a step of forming at least one pair of surface electrodes on the diamond layer; and a step of forming a covering layer, made of oxide or fluoride, on at least one sub-region of a detecting region present at the surface of the diamond layer, the sub-region being exposed from the surface electrodes.
摘要翻译：紫外线传感器包括基板; 金刚石层，放置在基板上，用作检测器; 以及布置在金刚石层上的至少一对表面电极。金刚石层的表面存在检测区域，检测区域具有从表面电极露出的至少一个子区域，并且子区域具有由氧化物或氟化物构成的覆盖层。紫外线传感器的制造方法包括在基板上形成用作检测器的金刚石层的工序; 在金刚石层上形成至少一对表面电极的步骤; 以及在存在于金刚石层的表面的检测区域的至少一个子区域上形成由氧化物或氟化物构成的覆盖层的步骤，该子区域从表面电极露出。

8. 发明申请

US20050051930A1 Fine structure composite and drying method of fine structure using the same 审中-公开
标题翻译：精细结构复合和干燥方法的精细结构使用相同
公开(公告)号：US20050051930A1
公开(公告)日：2005-03-10
申请号：US10972672
申请日：2004-10-26
申请人： Nobuyuki Kawakami , Takashi Kobori , Toshihiro Kugimiya
发明人： Nobuyuki Kawakami , Takashi Kobori , Toshihiro Kugimiya
IPC分类号： C23C26/00 , B29C71/00 , B32B27/00 , B81C1/00 , H01L21/027
CPC分类号： B81C1/00928 , B81C1/00841 , B81C1/0092 , Y10T428/31855 , Y10T428/31928
摘要： The present invention provides a fine structure composite composed of a fine structure and a protection film formed thereon. The fine structure composite is used prior to a step of drying the fine structure in a high pressure chamber using a liquefied or a supercritical fluid, and the protection film is formed of a high viscosity material. When the fine structure such as a semiconductor substrate after development is dried using a liquefied or a supercritical fluid, the surface of the fine structure such as the substrate is prevented from being spontaneously dried, and as a result, a pattern on the surface is prevented from being collapsed.
摘要翻译：本发明提供由精细结构和形成在其上的保护膜构成的精细结构复合体。在使用液化或超临界流体的高压室中干燥精细结构的步骤之前使用精细结构复合材料，并且保护膜由高粘度材料形成。当使用液化或超临界流体干燥显影后的半导体基板等微细结构时，防止诸如基板的精细结构的表面自发干燥，结果，防止了表面上的图案从崩溃。

9. 发明申请

US20100295053A1 THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE 有权
标题翻译：薄膜晶体管基板和显示器件
公开(公告)号：US20100295053A1
公开(公告)日：2010-11-25
申请号：US12812913
申请日：2009-01-15
申请人： Mototaka Ochi , Nobuyuki Kawakami , Katsufumi Tomihisa , Hiroshi Goto
发明人： Mototaka Ochi , Nobuyuki Kawakami , Katsufumi Tomihisa , Hiroshi Goto
IPC分类号： H01L33/00 , H01L29/786
CPC分类号： H01L29/458
摘要： The present invention provides a thin film transistor substrate and a display device in which a decrease in the dry etching rate of a source electrode and drain electrode is not caused; no etching residues are generated; and a barrier metal can be eliminated between a semiconductor layer and metal wires such as the source and drain electrodes. The present invention is a thin film transistor substrate having a semiconductor layer 1, a source electrode 2, a drain electrode 3, and a transparent conductive film 4, in which the source electrode 2 and drain electrode 3 are formed by patterning by means of dry etching and comprises an Al alloy thin film comprising 0.1 to 1.5 atom % of Si and/or Ge, 0.1 to 3.0 atom % of Ni and/or Co, and 0.1 to 0.5 atom % of La and/or Nd, and the thin film transistor is directly connected with the semiconductor layer 1.
摘要翻译：本发明提供一种薄膜晶体管基板和显示装置，其中不会引起源电极和漏电极的干蚀刻速率的降低; 不产生蚀刻残留物; 并且可以在半导体层和诸如源极和漏极之类的金属线之间消除阻挡金属。本发明是一种具有半导体层1，源电极2，漏电极3和透明导电膜4的薄膜晶体管基板，其中源电极2和漏电极3通过干式图案形成并且包括包含0.1至1.5原子％的Si和/或Ge，0.1至3.0原子％的Ni和/或Co，以及0.1至0.5原子％的La和/或Nd的Al合金薄膜，并且薄膜晶体管与半导体层1直接连接。

10. 发明申请

US20100065847A1 AL ALLOY FILM FOR DISPLAY DEVICE,DISPLAY DEVICE, AND SPUTTERING TARGET 有权
标题翻译：用于显示装置的AL合金膜，显示装置和喷射目标
公开(公告)号：US20100065847A1
公开(公告)日：2010-03-18
申请号：US12312907
申请日：2007-11-27
申请人： Hiroshi Gotou , Katsufumi Tomihisa , Aya Hino , Hiroyuki Okuno , Junichi Nakai , Nobuyuki Kawakami , Mototaka Ochi
发明人： Hiroshi Gotou , Katsufumi Tomihisa , Aya Hino , Hiroyuki Okuno , Junichi Nakai , Nobuyuki Kawakami , Mototaka Ochi
IPC分类号： H01L33/00 , H01B5/00 , C23C14/34
CPC分类号： H01L29/4908 , H01L23/53219 , H01L27/124 , H01L29/458 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides an Al alloy film for a display device, to be directly connected to a conductive oxide film on a substrate, the Al alloy film comprising Ge in an amount of 0.05 to 0.5 at %, and comprising Gd and/or La in a total amount of 0.05 to 0.45 at %, a display device using the same, and a sputtering target for the display device. For the Al alloy film of the present invention, even when a barrier metal is not provided, and a conductive oxide film and the Al alloy film are directly connected, the adhesion between the conductive oxide film and the Al alloy film is high, and the contact resistivity is low, and preferably, the dry etching property is also excellent.
摘要翻译：本发明提供一种用于显示装置的Al合金膜，其直接连接到基板上的导电氧化物膜，所述Al合金膜包含0.05至0.5原子％的Ge并且包含Gd和/或La 总量为0.05〜0.45at％，使用该显示装置的显示装置以及显示装置的溅射靶。对于本发明的Al合金膜，即使没有设置阻挡金属，并且导电氧化物膜和Al合金膜直接连接，导电氧化物膜和Al合金膜之间的粘合力高，接触电阻率低，优选干蚀刻性也优异。

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