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1. 发明授权

US07067903B2 Heat spreader and semiconductor device and package using the same 失效
标题翻译：散热器和半导体器件和封装使用相同
公开(公告)号：US07067903B2
公开(公告)日：2006-06-27
申请号：US10701499
申请日：2003-11-06
申请人： Takeshi Tachibana , Kazushi Hayashi , Kenichi Inoue , Yoshihiro Yokota , Koji Kobashi , Nobuyuki Kawakami , Takashi Kobori
发明人： Takeshi Tachibana , Kazushi Hayashi , Kenichi Inoue , Yoshihiro Yokota , Koji Kobashi , Nobuyuki Kawakami , Takashi Kobori
IPC分类号： H01L29/06 , H01L23/495 , H01L23/06 , H01L23/10
CPC分类号： H01L23/3732 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A semiconductor device and package has a heat spreader directly disposed on the reverse surface of the semiconductor device. This heat spreader includes a diamond layer or a layer containing diamond and ceramics such as silicon carbide and aluminum nitride. The heat spreader is directly formed on a substrate for the semiconductor device. In particular, the heat spreader is composed of a diamond layer and one or two metal or ceramic members, which are bonded to the diamond layer with one or two polymer adhesive layers. This diamond layer has a fiber structure across the thickness or a microcrystalline structure. Cilia are formed on a surface of the diamond layer facing the one or two metal or ceramic members.
摘要翻译：半导体器件和封装具有直接设置在半导体器件的反面上的散热器。该散热器包括金刚石层或含有金刚石和陶瓷的层，例如碳化硅和氮化铝。散热器直接形成在用于半导体器件的衬底上。特别地，散热器由金刚石层和一个或两个金属或陶瓷构件组成，其通过一个或两个聚合物粘合剂层结合到金刚石层。该金刚石层具有穿过厚度或微晶结构的纤维结构。在金刚石层的面向一个或两个金属或陶瓷构件的表面上形成纤毛。

2. 发明授权

US07193241B2 Ultraviolet sensor and method for manufacturing the same 失效
标题翻译：紫外线传感器及其制造方法
公开(公告)号：US07193241B2
公开(公告)日：2007-03-20
申请号：US11057603
申请日：2005-02-15
申请人： Kazushi Hayashi , Takeshi Tachibana , Yoshihiro Yokota , Nobuyuki Kawakami
发明人： Kazushi Hayashi , Takeshi Tachibana , Yoshihiro Yokota , Nobuyuki Kawakami
IPC分类号： H01L29/15 , H01L31/00
CPC分类号： G01J1/429 , G01J2001/0276 , H01L31/028 , H01L31/09 , H01L31/1085 , H01L2224/45144 , H01L2224/48091 , H01L2924/10253 , H01L2924/12032 , Y02E10/547 , H01L2924/00014 , H01L2924/00
摘要： An ultraviolet sensor includes a substrate; a diamond layer, placed on the substrate, functioning as a detector; and at least one pair of surface electrodes arranged on the diamond layer. The diamond layer has a detecting region present at the surface thereof, the detecting region has at least one sub-region exposed from the surface electrodes, and the sub-region has a covering layer, made of oxide or fluoride, lying thereon. A method for manufacturing the ultraviolet sensor includes a step of forming a diamond layer, functioning as a detector, on a substrate; a step of forming at least one pair of surface electrodes on the diamond layer; and a step of forming a covering layer, made of oxide or fluoride, on at least one sub-region of a detecting region present at the surface of the diamond layer, the sub-region being exposed from the surface electrodes.
摘要翻译：紫外线传感器包括基板; 金刚石层，放置在基板上，用作检测器; 以及布置在金刚石层上的至少一对表面电极。金刚石层的表面存在检测区域，检测区域具有从表面电极露出的至少一个子区域，并且子区域具有由氧化物或氟化物构成的覆盖层。紫外线传感器的制造方法包括在基板上形成用作检测器的金刚石层的工序; 在金刚石层上形成至少一对表面电极的步骤; 以及在存在于金刚石层的表面的检测区域的至少一个子区域上形成由氧化物或氟化物构成的覆盖层的步骤，该子区域从表面电极露出。

3. 发明申请

US20060001029A1 Diamond sensor 审中-公开
标题翻译：钻石传感器
公开(公告)号：US20060001029A1
公开(公告)日：2006-01-05
申请号：US11168875
申请日：2005-06-29
申请人： Kazushi Hayashi , Takeshi Tachibana , Yoshihiro Yokota , Nobuyuki Kawakami
发明人： Kazushi Hayashi , Takeshi Tachibana , Yoshihiro Yokota , Nobuyuki Kawakami
IPC分类号： H01L29/15
CPC分类号： H01L31/028 , G01J1/429 , H01L31/09 , H01L31/1085 , Y02E10/547
摘要： A diamond element is mounted on an insulating base material having a thickness of not more than 3 mm provided with one pair of metal interconnects. In the diamond element, an insulating diamond layer to act as a detection layer is deposited on a substrate, and one pair of interdigitated electrodes are deposited on the surface of this insulating diamond layer. The interdegital electrodes of the diamond element are connected via wires to the metal interconnects deposited on the insulating base material. The insulating base material may transmit ultraviolet radiation to be detected. The diamond sensor is capable of stably detecting ultraviolet radiation even when the distance between a lamp and an irradiation object is short.
摘要翻译：金刚石元件安装在具有一对金属互连件的厚度不大于3mm的绝缘基材上。在金刚石元件中，作为检测层的绝缘金刚石层沉积在基板上，并且在绝缘金刚石层的表面上沉积一对交叉指向的电极。金刚石元件的三角形电极通过导线连接到沉积在绝缘基材上的金属互连。绝缘基材可以透射待检测的紫外线。即使当灯和照射物体之间的距离短时，金刚石传感器也能够稳定地检测紫外线辐射。

4. 发明授权

US07064352B2 Diamond semiconductor device and method for manufacturing the same 失效
标题翻译：金刚石半导体器件及其制造方法
公开(公告)号：US07064352B2
公开(公告)日：2006-06-20
申请号：US11003510
申请日：2004-12-06
申请人： Yoshihiro Yokota , Nobuyuki Kawakami , Takeshi Tachibana , Kazushi Hayashi
发明人： Yoshihiro Yokota , Nobuyuki Kawakami , Takeshi Tachibana , Kazushi Hayashi
IPC分类号： H01L31/312 , H01L21/00
CPC分类号： H01L29/1602 , H01L29/78
摘要： A diamond semiconductor device includes a substrate made of single crystal diamond; a first diamond layer, placed on the substrate, containing an impurity; a second diamond layer containing the impurity, the second diamond layer being placed on the substrate and spaced from the first diamond layer; and a third diamond layer which has a impurity content less than that of the first and second diamond layers, which acts as a channel region, and through which charges are transferred from the first diamond layer to the second diamond layer. The first and second diamond layers have a first and a second end portion, respectively, facing each other with a space located therebetween. The first and second end portions have slopes epitaxially formed depending on the orientation of the substrate. The third diamond layer lies over the slopes and a section of the substrate that is located under the space.
摘要翻译：金刚石半导体器件包括由单晶金刚石制成的衬底; 第一金刚石层，放置在衬底上，含有杂质; 含有所述杂质的第二金刚石层，所述第二金刚石层被放置在所述基板上并与所述第一金刚石层间隔开; 以及第三金刚石层，其杂质含量小于作为沟道区的第一和第二金刚石层的杂质含量，并且电荷从第一金刚石层转移到第二金刚石层。第一和第二金刚石层具有彼此面对的第一和第二端部，其间具有空间。第一和第二端部具有取决于衬底的取向外延形成的斜面。第三金刚石层位于斜坡上方，并且位于该空间下方的基底部分。

5. 发明申请

US20050181122A1 Ultraviolet sensor and method for manufacturing the same 失效
标题翻译：紫外线传感器及其制造方法
公开(公告)号：US20050181122A1
公开(公告)日：2005-08-18
申请号：US11057603
申请日：2005-02-15
申请人： Kazushi Hayashi , Takeshi Tachibana , Yoshihiro Yokota , Nobuyuki Kawakami
发明人： Kazushi Hayashi , Takeshi Tachibana , Yoshihiro Yokota , Nobuyuki Kawakami
IPC分类号： H01L31/08 , G01J1/02 , G01J1/42 , H01L31/101 , C23C14/00
CPC分类号： G01J1/429 , G01J2001/0276 , H01L31/028 , H01L31/09 , H01L31/1085 , H01L2224/45144 , H01L2224/48091 , H01L2924/10253 , H01L2924/12032 , Y02E10/547 , H01L2924/00014 , H01L2924/00
摘要： An ultraviolet sensor includes a substrate; a diamond layer, placed on the substrate, functioning as a detector; and at least one pair of surface electrodes arranged on the diamond layer. The diamond layer has a detecting region present at the surface thereof, the detecting region has at least one sub-region exposed from the surface electrodes, and the sub-region has a covering layer, made of oxide or fluoride, lying thereon. A method for manufacturing the ultraviolet sensor includes a step of forming a diamond layer, functioning as a detector, on a substrate; a step of forming at least one pair of surface electrodes on the diamond layer; and a step of forming a covering layer, made of oxide or fluoride, on at least one sub-region of a detecting region present at the surface of the diamond layer, the sub-region being exposed from the surface electrodes.
摘要翻译：紫外线传感器包括基板; 金刚石层，放置在基板上，用作检测器; 以及布置在金刚石层上的至少一对表面电极。金刚石层的表面存在检测区域，检测区域具有从表面电极露出的至少一个子区域，并且子区域具有由氧化物或氟化物构成的覆盖层。紫外线传感器的制造方法包括在基板上形成用作检测器的金刚石层的工序; 在金刚石层上形成至少一对表面电极的步骤; 以及在存在于金刚石层的表面的检测区域的至少一个子区域上形成由氧化物或氟化物构成的覆盖层的步骤，该子区域从表面电极露出。

6. 发明申请

US20050127373A1 Diamond semiconductor device and method for manufacturing the same 失效
标题翻译：金刚石半导体器件及其制造方法
公开(公告)号：US20050127373A1
公开(公告)日：2005-06-16
申请号：US11003510
申请日：2004-12-06
申请人： Yoshihiro Yokota , Nobuyuki Kawakami , Takeshi Tachibana , Kazushi Hayashi
发明人： Yoshihiro Yokota , Nobuyuki Kawakami , Takeshi Tachibana , Kazushi Hayashi
IPC分类号： H01L27/12 , H01L21/336 , H01L29/16 , H01L29/78 , H01L29/786 , H01L29/15
CPC分类号： H01L29/1602 , H01L29/78
摘要： A diamond semiconductor device includes a substrate made of single crystal diamond; a first diamond layer, placed on the substrate, containing an impurity; a second diamond layer containing the impurity, the second diamond layer being placed on the substrate and spaced from the first diamond layer; and a third diamond layer which has a impurity content less than that of the first and second diamond layers, which acts as a channel region, and through which charges are transferred from the first diamond layer to the second diamond layer. The first and second diamond layers have a first and a second end portion, respectively, facing each other with a space located therebetween. The first and second end portions have slopes epitaxially formed depending on the orientation of the substrate. The third diamond layer lies over the slopes and a section of the substrate that is located under the space.
摘要翻译：金刚石半导体器件包括由单晶金刚石制成的衬底; 第一金刚石层，放置在衬底上，含有杂质; 含有所述杂质的第二金刚石层，所述第二金刚石层被放置在所述基板上并与所述第一金刚石层间隔开; 以及第三金刚石层，其杂质含量小于作为沟道区的第一和第二金刚石层的杂质含量，并且电荷从第一金刚石层转移到第二金刚石层。第一和第二金刚石层具有彼此面对的第一和第二端部，其间具有空间。第一和第二端部具有取决于衬底的取向外延形成的斜面。第三金刚石层位于斜坡上方，并且位于该空间下方的基底部分。

7. 发明申请

US20050051930A1 Fine structure composite and drying method of fine structure using the same 审中-公开
标题翻译：精细结构复合和干燥方法的精细结构使用相同
公开(公告)号：US20050051930A1
公开(公告)日：2005-03-10
申请号：US10972672
申请日：2004-10-26
申请人： Nobuyuki Kawakami , Takashi Kobori , Toshihiro Kugimiya
发明人： Nobuyuki Kawakami , Takashi Kobori , Toshihiro Kugimiya
IPC分类号： C23C26/00 , B29C71/00 , B32B27/00 , B81C1/00 , H01L21/027
CPC分类号： B81C1/00928 , B81C1/00841 , B81C1/0092 , Y10T428/31855 , Y10T428/31928
摘要： The present invention provides a fine structure composite composed of a fine structure and a protection film formed thereon. The fine structure composite is used prior to a step of drying the fine structure in a high pressure chamber using a liquefied or a supercritical fluid, and the protection film is formed of a high viscosity material. When the fine structure such as a semiconductor substrate after development is dried using a liquefied or a supercritical fluid, the surface of the fine structure such as the substrate is prevented from being spontaneously dried, and as a result, a pattern on the surface is prevented from being collapsed.
摘要翻译：本发明提供由精细结构和形成在其上的保护膜构成的精细结构复合体。在使用液化或超临界流体的高压室中干燥精细结构的步骤之前使用精细结构复合材料，并且保护膜由高粘度材料形成。当使用液化或超临界流体干燥显影后的半导体基板等微细结构时，防止诸如基板的精细结构的表面自发干燥，结果，防止了表面上的图案从崩溃。

8. 发明授权

US08299614B2 Interconnection structure, a thin film transistor substrate, and a manufacturing method thereof, as well as a display device 有权
标题翻译：互连结构，薄膜晶体管基板及其制造方法以及显示装置
公开(公告)号：US08299614B2
公开(公告)日：2012-10-30
申请号：US12936572
申请日：2009-04-17
申请人： Nobuyuki Kawakami , Mototaka Ochi , Aya Miki , Shinya Morita , Yoshihiro Yokota , Shinya Fukuma , Hiroshi Goto
发明人： Nobuyuki Kawakami , Mototaka Ochi , Aya Miki , Shinya Morita , Yoshihiro Yokota , Shinya Fukuma , Hiroshi Goto
IPC分类号： H01L23/48
CPC分类号： H01L21/26506 , H01L21/2236 , H01L21/76829 , H01L21/76838 , H01L27/124 , H01L29/458 , H01L29/66575 , H01L2924/0002 , H01L2924/00
摘要： An interconnection structure, containing a substrate and, in the following order from a side of the substrate: (I) a semiconductor layer; (II) a multilayer structure including (II-a) a first layer containing at least one type of an element selected from the group consisting of nitrogen, carbon and fluorine and (II-b) an Al—Si diffusion layer containing Al and Si; and (III) an Al film of pure Al or an Al alloy, wherein the at least one of element selected from the group consisting of nitrogen, carbon, and fluorine in the first layer is bonded with Si contained in the semiconductor layer.
摘要翻译：一种互连结构，其包含基板，并且从所述基板的侧面按以下顺序：（I）半导体层; （II）包括（II-a）含有选自氮，碳和氟中的至少一种元素的第一层和（II-b）含有Al和Si的Al-Si扩散层的多层结构 ; 和（III）纯Al或Al合金的Al膜，其中在第一层中选自氮，碳和氟的至少一种元素与包含在半导体层中的Si结合。

9. 发明申请

US20110024761A1 INTERCONNECTION STRUCTURE, A THIN FILM TRANSISTOR SUBSTRATE, AND A MANUFACTURING METHOD THEREOF, AS WELL AS A DISPLAY DEVICE 有权
标题翻译：互连结构，薄膜晶体管基板及其制造方法，作为显示器件
公开(公告)号：US20110024761A1
公开(公告)日：2011-02-03
申请号：US12936572
申请日：2009-04-17
申请人： Nobuyuki Kawakami , Mototaka Ochi , Aya Miki , Shinya Morita , Yoshihiro Yokota , Shinya Fukuma , Hiroshi Goto
发明人： Nobuyuki Kawakami , Mototaka Ochi , Aya Miki , Shinya Morita , Yoshihiro Yokota , Shinya Fukuma , Hiroshi Goto
IPC分类号： H01L33/16 , H01L21/20
CPC分类号： H01L21/26506 , H01L21/2236 , H01L21/76829 , H01L21/76838 , H01L27/124 , H01L29/458 , H01L29/66575 , H01L2924/0002 , H01L2924/00
摘要： Provided is a direct contact technology by which a barrier metal layer between an Al alloy interconnection composed of pure Al or an Al alloy and a semiconductor layer can be eliminated and the Al alloy interconnection can be directly and surely connected to the semiconductor layer within a wide process margin. In an interconnection structure, the semiconductor layer, and the Al alloy film composed of the pure Al or the Al alloy are provided on the substrate in this order from the substrate side. A multilayer structure of an (N, C, F) layer containing at least one type of an element selected from among a group composed of nitrogen, carbon and fluorine, and an Al—Si diffusion layer containing Al and Si is included in this order from the substrate side, between the semiconductor layer and the Al alloy film. At least the one type of the element, i.e., nitrogen, carbon or fluorine contained in the (N, C, F) layer is bonded with Si contained in the semiconductor layer.
摘要翻译：提供了一种直接接触技术，通过该技术可以消除由纯Al或Al合金构成的Al合金互连与半导体层之间的阻挡金属层，并且Al合金互连可以在宽的范围内直接且可靠地连接到半导体层过程保证金在互连结构中，从衬底侧依次从衬底上提供由纯Al或Al合金构成的半导体层和Al合金膜。包含选自由氮，碳和氟组成的组中的至少一种元素和包含Al和Si的Al-Si扩散层的（N，C，F）层的多层结构按此顺序包括从衬底侧在半导体层和Al合金膜之间。（N，C，F）层中所含的至少一种元素即氮，碳或氟与包含在半导体层中的Si键合。

10. 发明授权

US08535997B2 Wiring structure, thin film transistor substrate, method for manufacturing thin film transistor substrate, and display device 有权
标题翻译：接线结构，薄膜晶体管基板，薄膜晶体管基板的制造方法以及显示装置
公开(公告)号：US08535997B2
公开(公告)日：2013-09-17
申请号：US12999034
申请日：2009-07-03
申请人： Nobuyuki Kawakami , Shinya Fukuma , Aya Miki , Mototaka Ochi , Shinya Morita , Yoshihiro Yokota , Hiroshi Goto
发明人： Nobuyuki Kawakami , Shinya Fukuma , Aya Miki , Mototaka Ochi , Shinya Morita , Yoshihiro Yokota , Hiroshi Goto
IPC分类号： H01L21/84
CPC分类号： H01L23/53238 , G02F1/136286 , G02F2001/13629 , G02F2001/136295 , H01L21/28525 , H01L21/76843 , H01L27/124 , H01L29/458 , H01L2924/0002 , H01L2924/00
摘要： Provided is a direct contact technology by which a barrier metal layer between a Cu alloy wiring composed of pure Cu or a Cu alloy and a semiconductor layer can be eliminated, and the Cu alloy wiring can be directly and surely connected to the semiconductor layer within a wide process margin. The wiring structure is provided with the semiconductor layer and the Cu alloy film composed of pure Cu or the Cu alloy on a substrate in this order from the substrate side. A laminated structure is included between the semiconductor layer and the Cu alloy film. The laminated structure is composed of an (N, C, F) layer, which contains at least one element selected from among a group composed of nitrogen, carbon and fluorine, and a Cu—Si diffusion layer, which contains Cu and Si, in this order from the substrate side. Furthermore, at least the one element selected from among the group composed of nitrogen, carbon and fluorine is bonded to Si contained in the semiconductor layer.
摘要翻译：提供一种直接接触技术，通过该技术可以消除由纯Cu或Cu合金构成的Cu合金布线与半导体层之间的阻挡金属层，并且Cu合金布线可以直接和可靠地连接到半导体层内加工边缘宽布线结构从衬底侧依次设置有半导体层和由纯Cu或Cu合金构成的Cu合金膜。在半导体层和Cu合金膜之间包含层叠结构。层叠结构由（N，C，F）层构成，其含有选自由氮，碳和氟组成的组中的至少一种元素，以及含有Cu和Si的Cu-Si扩散层，这个顺序是从衬底一侧。此外，至少从由氮，碳和氟组成的组中选择的一种元素与包含在半导体层中的Si键合。

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