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1. 发明申请

US20180294131A1 Two-Dimensional Graphene Cold Cathode, Anode, and Grid 审中-公开
公开(公告)号：US20180294131A1
公开(公告)日：2018-10-11
申请号：US15730212
申请日：2017-10-11
申请人： Lockheed Martin Corporation
发明人： David Glen Findley
IPC分类号： H01J1/304 , H01J1/48 , H01J21/10 , H01J9/02 , B05D1/00
CPC分类号： H01J1/3042 , B05D1/005 , B05D2203/30 , H01J1/3046 , H01J1/48 , H01J9/025 , H01J21/105 , H01J2201/30457 , H01J2201/30469
摘要： In an embodiment, a method includes forming a first diamond layer on a substrate and inducing a layer of graphene from the first diamond layer by heating the substrate and the first diamond layer. The method includes forming a second diamond layer on top of the layer of graphene and applying a mask to the second diamond layer. The mask includes a shape of a cathode, an anode, and one or more grids. The method further includes forming a two-dimensional cold cathode, a two-dimensional anode, and one or more two-dimensional grids by reactive-ion electron-beam etching. Each of the two-dimensional cold cathode, the two-dimensional anode, and the one or more two-dimensional grids includes a portion of the first diamond layer, the graphene layer, and the second diamond layer such that the graphene layer is positioned between the first diamond layer and the second diamond layer.

2. 发明授权

US08569941B2 Diamondoid monolayers as electron emitters 失效
标题翻译：金刚石单层作为电子发射体
公开(公告)号：US08569941B2
公开(公告)日：2013-10-29
申请号：US13442563
申请日：2012-04-09
申请人： Wanli Yang , Jason D. Fabbri , Nicholas A. Melosh , Zahid Hussain , Zhi-Xun Shen
发明人： Wanli Yang , Jason D. Fabbri , Nicholas A. Melosh , Zahid Hussain , Zhi-Xun Shen
IPC分类号： H01J1/30 , H01J1/312 , H01J1/304 , H01J19/24
CPC分类号： H01J1/304 , H01J9/025 , H01J31/127 , H01J2201/30457
摘要： Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.
摘要翻译：提供基于金刚石单层的电子发射体，优选自组装的较高的类金刚石单层。已经证明使用这种类金刚石单层的高强度电子发射，特别是当单层由更高的金刚石组成时。这种类金刚石单层的应用可以改变衬底的带结构，并且发射单色电子，并且高强度电子发射也可以极大地提高应用于工业和商业应用的场效应电子发射体的效率。

3. 发明申请

US20120212153A1 DIAMONDOID MONOLAYERS AS ELECTRON EMITTERS 失效
标题翻译： DIAMONDOID MONOLAYERS作为电子发射体
公开(公告)号：US20120212153A1
公开(公告)日：2012-08-23
申请号：US13442563
申请日：2012-04-09
申请人： Wanli YANG , Jason D. Fabbri , Nicholas A. Melosh , Zahid Hussain , Zhi-Xun Shen
发明人： Wanli YANG , Jason D. Fabbri , Nicholas A. Melosh , Zahid Hussain , Zhi-Xun Shen
IPC分类号： H05B37/02 , H01J1/00 , B05D5/12
CPC分类号： H01J1/304 , H01J9/025 , H01J31/127 , H01J2201/30457
摘要： Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.
摘要翻译：提供基于金刚石单层的电子发射体，优选自组装的较高的类金刚石单层。已经证明使用这种类金刚石单层的高强度电子发射，特别是当单层由更高的金刚石组成时。这种类金刚石单层的应用可以改变衬底的带结构，并且发射单色电子，并且高强度电子发射也可以极大地提高应用于工业和商业应用的场效应电子发射体的效率。

4. 发明授权

US07812512B2 Field emission electrode, method and apparatus of manufacturing the same by carrying a humidification process and an aging process 有权
标题翻译：场致发射电极，通过进行加湿处理和老化处理来制造其的方法和装置
公开(公告)号：US07812512B2
公开(公告)日：2010-10-12
申请号：US12239061
申请日：2008-09-26
申请人： Kazuhito Nishimura , Hideki Sasaoka
发明人： Kazuhito Nishimura , Hideki Sasaoka
IPC分类号： H01J1/30 , H01J1/304 , H01J9/02 , H01J9/44
CPC分类号： H01J1/304 , H01J9/025 , H01J2201/30453 , H01J2201/30457
摘要： A method of manufacturing a field emission electrode includes humidification processing to absorb water at a surface of an electron emission film emitting electrons as a result of application of a voltage, and voltage application processing to apply an aging voltage between the humidified electron emission film and an electrode provided facing the electron emission film.
摘要翻译：制造场致发射电极的方法包括加湿处理，以吸收作为施加电压的结果发射电子的电子发射膜的表面的水;以及电压施加处理，以在加湿的电子发射膜和面向电子发射膜设置的电极。

5. 发明申请

US20090160308A1 DIAMOND ELECTRON RADIATION CATHODE, ELECTRON SOURCE, ELECTRON MICROSCOPE, AND ELECTRON BEAM EXPOSER 失效
标题翻译：钻石电子辐射阴极，电子源，电子显微镜和电子束曝光
公开(公告)号：US20090160308A1
公开(公告)日：2009-06-25
申请号：US12095430
申请日：2007-06-27
申请人： Yoshiyuki Yamamoto , Akihiko Ueda , Yoshiki Nishibayashi , Takahiro Imai
发明人： Yoshiyuki Yamamoto , Akihiko Ueda , Yoshiki Nishibayashi , Takahiro Imai
IPC分类号： H01J1/304
CPC分类号： H01J1/304 , B82Y10/00 , B82Y40/00 , H01J37/073 , H01J37/3174 , H01J2201/30457 , H01J2237/06341 , H01J2237/26
摘要： An object is to provide an electron emitting cathode achieving high luminance, low energy dispersion, and long life. It is therefore an object to provide a diamond electron emitting cathode graspable on a sufficiently stable basis, sharpened at the tip, and improved in electric field intensity. A diamond electron emitting cathode 110 according to the present invention is partitioned into at least three regions, i.e., a front end region 203 intended for electron emission at a tip of columnar shape, a rear end region 201 intended for grasping opposite in the longitudinal direction, and a thinned intermediate region 202, a cross-sectional area of the rear end region is not less than 0.2 mm2, the tip of the front end region is sharpened, and a maximum cross-sectional area of the thinned intermediate region is not more than 0.1 mm2.
摘要翻译：目的是提供一种实现高亮度，低能量分散和长寿命的电子发射阴极。因此，本发明的目的是提供一种能够在足够稳定的基础上掌握的金刚石电子发射阴极，其尖端锐化，并提高电场强度。根据本发明的金刚石电子发射阴极110被划分成至少三个区域，即用于在柱形形状的尖端处用于电子发射的前端区域203，用于在纵向上相对握持的后端区域201 ，以及减薄的中间区域202，后端区域的截面积为0.2mm 2以上，前端区域的前端被削尖，并且变薄的中间区域的最大截面积不大大于0.1 mm2。

6. 发明授权

US07391145B2 Cold-cathode electron source, microwave tube using it, and production method thereof 失效
标题翻译：冷阴极电子源，使用微波管及其制造方法
公开(公告)号：US07391145B2
公开(公告)日：2008-06-24
申请号：US11211665
申请日：2005-08-26
申请人： Natsuo Tatsumi , Takahiro Imai
发明人： Natsuo Tatsumi , Takahiro Imai
IPC分类号： H01J1/304
CPC分类号： H01J23/04 , H01J1/3044 , H01J3/022 , H01J9/025 , H01J23/06 , H01J2201/30457
摘要： A cold-cathode electron source is formed that successfully achieves a high frequency and a high output. Embodiments include a cold-cathode electron source comprising emitters having a tip portion tapered at an aspect ratio R of not less than 4, thereby decreasing capacitance between the emitters and a gate electrode by a degree of declination from the gate electrode, such that the cold-cathode electron source is able to operate at a high frequency. Embodiments also include a cold-cathode electron source formed of a diamond with a high melting point and a high thermal conductivity, such that the emitters operate at a high current density and at a high output.
摘要翻译：形成冷阴极电子源，其成功实现高频和高输出。实施例包括一种冷阴极电子源，其包括具有以不小于4的纵横比R渐缩的尖端部分的发射体，由此使源极与栅电极之间的电容从栅电极减小一定角度，使得冷 - 阴极电子源能够在高频下工作。实施例还包括由具有高熔点和高导热性的金刚石形成的冷阴极电子源，使得发射器以高电流密度和高输出工作。

7. 发明申请

US20080029145A1 Diamond-like carbon thermoelectric conversion devices and methods for the use and manufacture thereof 审中-公开
标题翻译：类金刚石碳热电转换装置及其制造方法
公开(公告)号：US20080029145A1
公开(公告)日：2008-02-07
申请号：US11725149
申请日：2007-03-16
申请人： Chien-Min Sung
发明人： Chien-Min Sung
IPC分类号： H01L35/00 , B05D5/12
CPC分类号： H01J1/3048 , H01J3/021 , H01J9/025 , H01J29/04 , H01J2201/30457
摘要： Diamond-like carbon based thermoelectric conversion devices and methods of making and using the same, which have improved conversion efficiencies and increased reliability. The device can include a cathode having a base member with a layer of diamond-like carbon material such as amorphous diamond coated over the cathode. A dielectric intermediate member can be electrically coupled between the diamond-like carbon material and an anode. Various additional layers and configurations can allow for improved performance such as multiple cathode layers and/or multiple intermediate layers. The thermoelectric conversion devices can be configured as an electrical generator and/or a cooling device and can be conveniently formed. In addition, the devices of the present invention do not require formation of a vacuum space and are typically completely solid throughout. As a result, the devices of the present invention are susceptible to mass production at reduced costs and have improved conversion efficiencies and reliability.
摘要翻译：类金刚石碳基热电转换装置及其制造和使用方法，其具有改进的转换效率和增加的可靠性。该器件可以包括具有基底部件的阴极，该基底部件具有金刚石状碳材料层，例如涂覆在阴极上的无定形金刚石。电介质中间构件可以电连接在类金刚石碳材料和阳极之间。各种附加层和构造可以允许改进的性能，例如多个阴极层和/或多个中间层。热电转换装置可以被配置为发电机和/或冷却装置，并且可以方便地形成。此外，本发明的装置不需要形成真空空间，并且通常完全是固体。结果，本发明的装置易于以降低的成本进行批量生产并具有改进的转换效率和可靠性。

8. 发明授权

US07323812B2 Process for producing diamond electron emission element and electron emission element 失效
标题翻译：制造金刚石电子发射元件和电子发射元件的方法
公开(公告)号：US07323812B2
公开(公告)日：2008-01-29
申请号：US10555296
申请日：2004-09-29
申请人： Natsuo Tatsumi , Akihiko Namba , Yoshiki Nishibayashi , Takahiro Imai
发明人： Natsuo Tatsumi , Akihiko Namba , Yoshiki Nishibayashi , Takahiro Imai
IPC分类号： H01J9/30
CPC分类号： H01J1/3044 , H01J1/304 , H01J9/025 , H01J29/04 , H01J2201/30457
摘要： A method for production includes a step for forming concave molds on a surface of a substrate and a step for growing a diamond heteroepitaxially on the substrate in an atmosphere containing a doping material. The crystal structure of the slope of the concave molds of the substrate can have the cubic system crystal orientation (111), and the doping material is phosphorous. Further, the substrate is Si, and the slope of the molds can be the Si(111) face. The diamond electron emission device contains projection parts on the surface thereof, where a slope of the projection parts 1 contains a diamond (111) face, and flat parts 2, which are not the projection parts, contain face orientations other than (100) face or (110) face and grain boundaries.
摘要翻译：一种生产方法包括在衬底的表面上形成凹模的步骤以及在含有掺杂材料的气氛中在衬底上生长异质外延金刚石的步骤。衬底的凹模的斜面的晶体结构可以具有立方体系晶体取向（111），并且掺杂材料是磷。此外，衬底是Si，并且模具的斜率可以是Si（111）面。金刚石电子发射装置在其表面上包含投影部分，其中突出部分1的斜面包含金刚石（111）面，并且不是突出部分的平坦部分2包含除（100）面之外的面取向或（110）面和晶界。

9. 发明授权

US07312562B2 Heterodiamondoid-containing field emission devices 失效
标题翻译：含异种金刚石的场致发射器件
公开(公告)号：US07312562B2
公开(公告)日：2007-12-25
申请号：US11029906
申请日：2005-01-04
申请人： Jeremy E. Dahl , Robert M. Carlson , Shenggao Liu
发明人： Jeremy E. Dahl , Robert M. Carlson , Shenggao Liu
IPC分类号： H01J1/00 , H01J1/62 , B01J3/06
CPC分类号： H01J1/3048 , H01J2201/30457
摘要： Novel heterodiamondoid-containing field emission devices (FED's) are disclosed herein. In one embodiment of the present invention, the heteroatom of the heterodiamondoid comprises an electron-donating species (such as nitrogen) as part of the cathode or electron-emitting component of the field emission device.
摘要翻译：本文公开了新型异二茂金属的场致发射器件（FED）。在本发明的一个实施方案中，杂二环类物质的杂原子包括作为场致发射器件的阴极或电子发射成分的一部分的给电子物质（例如氮）。

10. 发明授权

US07276222B2 Diamondoid-containing thermally conductive materials 失效
标题翻译：含金刚石的导热材料
公开(公告)号：US07276222B2
公开(公告)日：2007-10-02
申请号：US10892037
申请日：2004-07-14
申请人： Jeremy E. Dahl , Robert M. Carlson , Shenggao Liu
发明人： Jeremy E. Dahl , Robert M. Carlson , Shenggao Liu
IPC分类号： C30B29/04
CPC分类号： C07C4/00 , B82Y10/00 , B82Y30/00 , C07C7/04 , C07C7/12 , C07C7/135 , C07C13/64 , C07C17/10 , C07C17/16 , C07C17/383 , C07C17/395 , C07C23/20 , C07C39/17 , C07C47/347 , C07C49/423 , C07C205/05 , C07C211/50 , C07C2603/54 , C07C2603/90 , C08G61/00 , C08G61/02 , C08G83/00 , C08L65/00 , H01J1/3048 , H01J2201/30457 , H01L23/3732 , H01L23/4334 , H01L23/49513 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L35/22 , H01L2224/32245 , H01L2224/451 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83 , H01L2924/00014 , H01L2924/01012 , H01L2924/01019 , H01L2924/0102 , H01L2924/01029 , H01L2924/01078 , H01L2924/01079 , H01L2924/12042 , H01L2924/14 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/3512 , H01L2924/00 , H01L2924/00012 , H01L2224/05599
摘要： Novel uses of diamondoid-containing materials in the field of microelectronics are disclosed. Embodiments include, but are not limited to, thermally conductive films in integrated circuit packaging, thermally conductive adhesive films, and thermally conductive films in thermoelectric cooling devices. The diamondoids employed in the present invention may be selected from lower diamondoids, as well as the newly provided higher diamondoids, including substituted and unsubstituted diamondoids. The higher diamondoids include tetramantane, pentamantane, hexamantane, heptamantane, octamantane, nonamantane, decamantane, and undecamantane. The diamondoid-containing material may be fabricated as a diamondoid-containing polymer, a diamondoid-containing sintered ceramic, a diamondoid ceramic composite, a CVD diamondoid film, a self-assembled diamondoid film, and a diamondoid-fullerene composite.
摘要翻译：公开了在微电子学领域中含有金刚石的材料的新用途。实施例包括但不限于集成电路封装中的导热膜，导热粘合剂膜和热电冷却装置中的导热膜。本发明中使用的类金刚石可以选自下面的金刚石，以及新提供的更高的金刚石，包括取代和未取代的金刚石。较高的类金刚石包括四聚烷，五金刚，六金刚，七金刚烷，八甲烷，非金刚烷，十烷金和十一烷。含金刚石的材料可以制造为含有金刚石的聚合物，含金刚石的烧结陶瓷，金刚石陶瓷复合材料，CVD金刚石膜，自组装的金刚石膜和类金刚石 - 富勒烯复合材料。

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