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    • 4. 发明授权
    • Plasma reactor for diamond synthesis
    • 用于金刚石合成的等离子体反应器
    • US4940015A
    • 1990-07-10
    • US379586
    • 1989-07-13
    • Koji KobashiKozo NishimuraKoichi MiyataYoshio KawateKazuo KumagaiNorio SuzukiYutaka KawataKiyotaka Ishibashi
    • Koji KobashiKozo NishimuraKoichi MiyataYoshio KawateKazuo KumagaiNorio SuzukiYutaka KawataKiyotaka Ishibashi
    • C23C16/26C23C16/27C23C16/50C23C16/511C30B25/10C30B29/04H01J37/32
    • C23C16/274C23C16/26C23C16/277C23C16/511C30B25/105H01J37/32192H01J37/32284H01J37/32733H01J2237/339
    • A plasma reactor for diamond synthesis includes a microwave generator, a waveguide connected to the microwave generator, an antenna disposed within the waveguide to direct the microwaves propagated along the waveguide toward the interior of a reaction chamber, a microwave window provided above the upper wall of the waveguide, a reaction chamber defined by (a) a cylindrical bottom member hermetically joined to the microwave window and the waveguide, (b) a reaction gas inlet port and a gas outlet port in the side wall thereof, and (c) a substrate holder disposed within the reaction chamber in facing opposition to the microwave window so as to be moved toward and away from the microwave window to adjust the distance between the microwave window and the substrate holder to generate a desired microwave resonance mode. A plasma is produced only in the central portion of the reaction chamber, so that the etching of the microwave window and the resulting contamination of the diamond film by impurities produced by etching the microwave window are prevented. The plasma reactor for diamond synthesis is capable of forming a high-quality diamond film on a large surface of a substrate at a high growth rate in a range of 1 to 2 .mu.m/hr.
    • 用于金刚石合成的等离子体反应器包括微波发生器,连接到微波发生器的波导,设置在波导内的天线,以将沿波导传播的微波导向反应室的内部,设置在反应室的上壁上方的微波窗口 波导,由(a)气密地接合到微波窗口和波导的圆柱形底部构件限定的反应室,(b)侧壁中的反应气体入口和气体出口,以及(c)基板 保持器设置在与微波窗口相对的反应室内,以便朝向和远离微波窗口移动,以调节微波窗口和衬底保持器之间的距离以产生所需的微波谐振模式。 仅在反应室的中心部分产生等离子体,从而防止了通过蚀刻微波窗口产生的杂质对微波窗口的蚀刻和金刚石膜的污染。 用于金刚石合成的等离子体反应器能够以1至2μm/ hr的高生长速率在基板的大表面上形成高质量的金刚石膜。
    • 9. 发明授权
    • Diamond heterojunction diode
    • 金刚石异质结二极管
    • US5298766A
    • 1994-03-29
    • US854910
    • 1992-03-20
    • Koji KobashiKozo NishimuraShigeaki MiyauchiKazuo KumagaiRie Katoh
    • Koji KobashiKozo NishimuraShigeaki MiyauchiKazuo KumagaiRie Katoh
    • H01L21/205H01L29/16H01L29/861H01L29/48H01L29/56
    • H01L29/1602H01L29/861
    • A diamond heterojunction diode having an improved rectifying characteristics with a small reverse current and a large forward current. Three layers are formed on a low-resistance p-type silicon substrate by the microwave plasma CVD in the order of a B-doped p type semiconducting diamond layer, an insulating undoped diamond layer (thinner than 1 .mu.m), and an n-type semiconducting silicon layer. Ohmic electrodes are formed on the front side of a n-type semiconducting silicon layer and the back side of a substrate. Under a forward bias, the electric field is applied to the intermediate insulating layer to accelerate the transport of holes and electrons. Under a reversed bias, the energy band has a notch as well as a potential barrier due to the intermediate layer thus preventing holes from transporting from the n-type semiconducting diamond layer to the p-type semiconducting diamond layer, resulting in the improved rectifying characteristics.
    • 金刚石异质结二极管具有改进的整流特性,具有小的反向电流和大的正向电流。 通过微波等离子体CVD以B掺杂p型半导体金刚石层,绝缘未掺杂金刚石层(比1(μm)薄)的顺序,在低电阻p型硅衬底上形成三层, n型半导体硅层。 欧姆电极形成在n型半导体硅层的正面和衬底的背面。 在正向偏压下,电场被施加到中间绝缘层以加速空穴和电子的传输。 在反向偏置下,由于中间层,能带具有缺口以及势垒,从而防止空穴从n型半导体金刚石层传输到p型半导体金刚石层,导致改进的整流特性 。