专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5353737A Method for forming boron-doped semiconducting diamond films 失效
标题翻译：硼掺杂半导体金刚石薄膜的形成方法
公开(公告)号：US5353737A
公开(公告)日：1994-10-11
申请号：US46804
申请日：1993-04-16
申请人： Hisashi Koyama , Koichi Miyata , Koji Kobashi
发明人： Hisashi Koyama , Koichi Miyata , Koji Kobashi
IPC分类号： H01L21/20 , C23C16/27 , H01L21/205 , C30B29/04
CPC分类号： C23C16/278 , C23C16/274 , H01L21/02381 , H01L21/02527 , H01L21/02579 , H01L21/0262
摘要： Disclosed is a method for forming a diamond film on a substrate by vapor-phase synthesis using a reaction gas which contains B.sub.2 H.sub.6 and O.sub.2 with a gas concentration ratio (volume %) of ([B.sub.2 H.sub.6 ]/[O.sub.2 ]).gtoreq.1.times.10.sup.-4 in addition to a hydrocarbon gas in hydrogen. By this invention, it is possible to form p-type semiconducting diamond films having an excellent crystallinity and desired electric characteristics.
摘要翻译：公开了使用含有（[B2H6] / [O 2]）> / = 1×10 -3的气体浓度比（体积％）的含有B 2 H 6和O 2的反应气体通过气相合成在基板上形成金刚石膜的方法， 4除氢气中的烃气体外。通过本发明，可以形成具有优异结晶度和所需电特性的p型半导体金刚石膜。

2. 发明授权

US5869390A Method for forming electrode on diamond for electronic devices 失效
标题翻译：电子设备金刚石电极形成方法
公开(公告)号：US5869390A
公开(公告)日：1999-02-09
申请号：US871552
申请日：1997-06-09
申请人： Kozo Nishimura , Koji Kobashi , Shigeaki Miyauchi , Rie Kato , Hisashi Koyama , Kimitsugu Saito
发明人： Kozo Nishimura , Koji Kobashi , Shigeaki Miyauchi , Rie Kato , Hisashi Koyama , Kimitsugu Saito
IPC分类号： H01L21/28 , H01L21/04 , H01L23/14 , H01L23/373 , H01L21/44 , H01L21/00
CPC分类号： H01L21/0435 , H01L21/043 , H01L23/3732 , H01L2924/0002 , Y10S148/10 , Y10S148/148
摘要： Disclosed is a method of forming electrodes on diamond comprising the steps of: forming a mask pattern on diamond or diamond film; performing a treatment of the diamond surface by a plasma of inert gases; forming an electrode film on the whole surface of the specimen; and removing the mask, thereby forming a specified pattern of the electrodes. By this method, it is possible to form electrodes having high adhesion to diamond and diamond film for electronic devices.
摘要翻译：公开了一种在金刚石上形成电极的方法，包括以下步骤：在金刚石或金刚石膜上形成掩模图案; 通过惰性气体的等离子体处理金刚石表面; 在试样的整个表面上形成电极膜; 并除去掩模，从而形成电极的指定图案。通过该方法，可以形成对于电子器件的金刚石和金刚石膜具有高粘附性的电极。

3. 发明授权

US6080378A Diamond films and methods for manufacturing diamond films 失效
标题翻译：金刚石薄膜和制造金刚石薄膜的方法
公开(公告)号：US6080378A
公开(公告)日：2000-06-27
申请号：US924701
申请日：1997-09-05
申请人： Yoshihiro Yokota , Takeshi Tachibana , Koichi Miyata , Koji Kobashi
发明人： Yoshihiro Yokota , Takeshi Tachibana , Koichi Miyata , Koji Kobashi
IPC分类号： C30B29/04 , C23C16/27 , C30B25/10
CPC分类号： C23C16/274 , C23C16/278 , C30B25/105
摘要： Diamond films and novel method to grow the diamond films can improve the performance of products utilizing diamond films. In the cathodoluminescence taken at room temperature, the integrated intensity ratio of the diamond films, CL.sub.1 /CL.sub.2, is equal or greater than 1/20, where CL.sub.1 is the integrated intensity of the emission band in the wavelength region shorter than 300 nm while CL.sub.2 is the integrated intensity of the emission band in the wavelength region from 300 nm to 800 nm. Such high quality diamond films with intensive coalescence on the surface can be obtained by deposition on the substrates or films, made of at least one member selected from the group consisting of platinum, platinum alloys, iridium, iridium alloys, nickel, nickel alloys, silicon, and metal silicides.
摘要翻译：金刚石薄膜和金刚石薄膜生长的新方法可以改善利用金刚石薄膜的产品的性能。在室温下的阴极发光中，金刚石膜CL1 / CL2的积分强度比等于或大于1/20，其中CL1是短于300nm的波长区域中的发射带的积分强度，而CL2 是从300nm到800nm的波长区域的发射带的积分强度。通过沉积在由铂，铂合金，铱，铱合金，镍，镍合金，硅中的至少一种构成的基板或膜上，可以获得在表面上具有强烈聚结的这种高品质金刚石膜，和金属硅化物。

4. 发明授权

US5373172A Semiconducting diamond light-emitting element 失效
标题翻译：半导体金刚石发光元件
公开(公告)号：US5373172A
公开(公告)日：1994-12-13
申请号：US544
申请日：1993-01-04
申请人： Koji Kobashi , Koichi Miyata , Kazuo Kumagai , Shigeaki Miyauchi , Yuichi Matsui
发明人： Koji Kobashi , Koichi Miyata , Kazuo Kumagai , Shigeaki Miyauchi , Yuichi Matsui
IPC分类号： C09K11/65 , H01B1/04 , H01L21/205 , H01L33/00 , H01L33/34 , H01L33/40 , H01L29/161 , H01L23/48 , H01L29/205
CPC分类号： H01L33/34 , C09K11/65 , H01B1/04 , H01L33/0033 , H01L33/0037 , H01L33/0054 , Y02B20/181
摘要： A semiconducting diamond electroluminescence element comprises an electrically conductive substrate, a semiconducting diamond layer formed on the substrate, an insulating diamond layer formed on the semiconducting diamond layer, a front electrode formed on the insulating diamond layer, and a back electrode formed on the conductive substrate in ohmic contact with the same. The color of light to be emitted by the semiconducting diamond electroluminescence element can readily be determined by changing the impurity content in the semiconducting diamond layer. The luminescence intensity of the semiconducting diamond electroluminescence element can readily be changed by changing the voltage applied across the front and back electrodes without entailing dielectric breakdown.
摘要翻译：半导体金刚石电致发光元件包括导电衬底，在衬底上形成的半导体金刚石层，形成在半导体金刚石层上的绝缘金刚石层，形成在绝缘金刚石层上的前电极和形成在导电衬底上的背电极与欧姆接触相同。由半导体金刚石电致发光元件发射的光的颜色可以通过改变半导体金刚石层中的杂质含量来容易地确定。半导体金刚石电致发光元件的发光强度可以通过改变施加在前电极和后电极上的电压而容易地改变，而不会导致电介质击穿。

5. 发明授权

US4940015A Plasma reactor for diamond synthesis 失效
标题翻译：用于金刚石合成的等离子体反应器
公开(公告)号：US4940015A
公开(公告)日：1990-07-10
申请号：US379586
申请日：1989-07-13
申请人： Koji Kobashi , Kozo Nishimura , Koichi Miyata , Yoshio Kawate , Kazuo Kumagai , Norio Suzuki , Yutaka Kawata , Kiyotaka Ishibashi
发明人： Koji Kobashi , Kozo Nishimura , Koichi Miyata , Yoshio Kawate , Kazuo Kumagai , Norio Suzuki , Yutaka Kawata , Kiyotaka Ishibashi
IPC分类号： C23C16/26 , C23C16/27 , C23C16/50 , C23C16/511 , C30B25/10 , C30B29/04 , H01J37/32
CPC分类号： C23C16/274 , C23C16/26 , C23C16/277 , C23C16/511 , C30B25/105 , H01J37/32192 , H01J37/32284 , H01J37/32733 , H01J2237/339
摘要： A plasma reactor for diamond synthesis includes a microwave generator, a waveguide connected to the microwave generator, an antenna disposed within the waveguide to direct the microwaves propagated along the waveguide toward the interior of a reaction chamber, a microwave window provided above the upper wall of the waveguide, a reaction chamber defined by (a) a cylindrical bottom member hermetically joined to the microwave window and the waveguide, (b) a reaction gas inlet port and a gas outlet port in the side wall thereof, and (c) a substrate holder disposed within the reaction chamber in facing opposition to the microwave window so as to be moved toward and away from the microwave window to adjust the distance between the microwave window and the substrate holder to generate a desired microwave resonance mode. A plasma is produced only in the central portion of the reaction chamber, so that the etching of the microwave window and the resulting contamination of the diamond film by impurities produced by etching the microwave window are prevented. The plasma reactor for diamond synthesis is capable of forming a high-quality diamond film on a large surface of a substrate at a high growth rate in a range of 1 to 2 .mu.m/hr.
摘要翻译：用于金刚石合成的等离子体反应器包括微波发生器，连接到微波发生器的波导，设置在波导内的天线，以将沿波导传播的微波导向反应室的内部，设置在反应室的上壁上方的微波窗口波导，由（a）气密地接合到微波窗口和波导的圆柱形底部构件限定的反应室，（b）侧壁中的反应气体入口和气体出口，以及（c）基板保持器设置在与微波窗口相对的反应室内，以便朝向和远离微波窗口移动，以调节微波窗口和衬底保持器之间的距离以产生所需的微波谐振模式。仅在反应室的中心部分产生等离子体，从而防止了通过蚀刻微波窗口产生的杂质对微波窗口的蚀刻和金刚石膜的污染。用于金刚石合成的等离子体反应器能够以1至2μm/ hr的高生长速率在基板的大表面上形成高质量的金刚石膜。

6. 发明授权

US5770467A Method for forming electrode on diamond for electronic devices 失效
公开(公告)号：US5770467A
公开(公告)日：1998-06-23
申请号：US622858
申请日：1996-03-29
申请人： Kozo Nishimura , Koji Kobashi , Shigeaki Miyauchi , Rie Kato , Hisashi Koyama , Kimitsugu Saito
发明人： Kozo Nishimura , Koji Kobashi , Shigeaki Miyauchi , Rie Kato , Hisashi Koyama , Kimitsugu Saito
IPC分类号： H01L21/28 , H01L21/04 , H01L23/14 , H01L23/373 , H01L21/441
CPC分类号： H01L21/0435 , H01L21/043 , H01L23/3732 , H01L2924/0002 , Y10S148/10 , Y10S148/148
摘要： Disclosed is a method of forming electrodes on diamond comprising the steps of: forming a mask pattern on diamond or diamond film; performing a treatment of the diamond surface by a plasma of inert gases; forming an electrode film on the whole surface of the specimen; and removing the mask, thereby forming a specified pattern of the electrodes. By this method, it is possible to form electrodes having high adhesion to diamond and diamond film for electronic devices.

7. 发明授权

US5160405A Method of etching diamond thin films 失效
标题翻译：蚀刻金刚石薄膜的方法
公开(公告)号：US5160405A
公开(公告)日：1992-11-03
申请号：US670590
申请日：1991-03-18
申请人： Shigeaki Miyauchi , Koichi Miyata , Kazuo Kumagai , Koji Kobashi
发明人： Shigeaki Miyauchi , Koichi Miyata , Kazuo Kumagai , Koji Kobashi
IPC分类号： C30B33/12 , C30B29/04 , C30B33/00 , H01L21/302 , H01L21/3065
CPC分类号： H01L21/3065 , C30B29/04 , C30B33/00
摘要： Described is an etching method of a diamond film which comprises providing a diamond film in an atmosphere of a gas containing at least oxygen and/or hydrogen and subjecting the diamond film to an irradiation of an electron beam generated by direct current discharge through a pattern of a mask. In this condition, when the diamond film is contacted with the plasma produced by the electron beam in the atmosphere, the unmasked areas are irradiated by the electron beam, and converted to graphite. The graphite is more readily etched by the plasma, so that the diamond film can be etched at a high rate. The etching through a mask ensures a fine etched pattern of the diamond film. In addition, a diamond film with a large area can be etched by this method.
摘要翻译：描述了金刚石膜的蚀刻方法，其包括在至少含有氧和/或氢的气体的气氛中提供金刚石膜，并使金刚石膜通过直流放电产生的电子束的照射，一个面具在这种情况下，当金刚石膜与大气中由电子束产生的等离子体接触时，未掩蔽的区域被电子束照射，并转化为石墨。通过等离子体更容易地蚀刻石墨，使得金刚石膜可以高速蚀刻。通过掩模的蚀刻确保金刚石膜的精细蚀刻图案。此外，可以通过该方法蚀刻具有大面积的金刚石膜。

8. 发明授权

US5086014A Schottky diode manufacturing process employing the synthesis of a polycrystalline diamond thin film 失效
标题翻译：使用多晶金刚石薄膜合成的肖特基二极管制造工艺
公开(公告)号：US5086014A
公开(公告)日：1992-02-04
申请号：US584110
申请日：1990-09-18
申请人： Koichi Miyata , Kazuo Kumagai , Koji Kobashi , Yuichi Matsui , Akimitsu Nakaue
发明人： Koichi Miyata , Kazuo Kumagai , Koji Kobashi , Yuichi Matsui , Akimitsu Nakaue
IPC分类号： H01L21/205 , H01L21/04 , H01L21/20 , H01L21/285 , H01L29/16 , H01L29/45 , H01L29/47 , H01L29/862 , H01L29/872
CPC分类号： H01L29/872 , H01L21/02381 , H01L21/02527 , H01L21/02579 , H01L21/0262 , H01L21/28537 , H01L29/1602 , H01L29/45 , H01L29/6603 , H01L29/862 , Y10S148/14
摘要： A schottky diode manufacturing process employing diamond film comprises forming a B-doped p-type polycrystalline diamond film on a low-resistance p-type Si substrate by CVD using a source gas consisting of CH.sub.4, H.sub.2 and B.sub.2 H.sub.6, forming an ohmic contact on the back of the p-type Si substrate, and forming a metal electrode of Al, Pt Au, Ti or W on the B-doped p-type polycrystalline diamond film. The B/C concentration ratio of the source gas is greater than 0.01 ppm and less than 20 ppm.
摘要翻译：使用金刚石膜的肖特基二极管制造方法包括通过使用由CH 4，H 2和B 2 H 6组成的源气体的CVD在低电阻p型Si衬底上形成B掺杂的p型多晶金刚石膜，在其上形成欧姆接触并且在B掺杂的p型多晶金刚石膜上形成Al，Pt Au，Ti或W的金属电极。源气体的B / C浓度比大于0.01ppm且小于20ppm。

9. 发明授权

US5755879A Methods for manufacturing substrates to form monocrystalline diamond films by chemical vapor deposition 失效
标题翻译：通过化学气相沉积制造衬底以形成单晶金刚石膜的方法
公开(公告)号：US5755879A
公开(公告)日：1998-05-26
申请号：US560078
申请日：1995-11-17
申请人： Yoshihiro Shintani , Takeshi Tachibana , Kozo Nishimura , Koichi Miyata , Yoshihiro Yokota , Koji Kobashi
发明人： Yoshihiro Shintani , Takeshi Tachibana , Kozo Nishimura , Koichi Miyata , Yoshihiro Yokota , Koji Kobashi
IPC分类号： C30B29/04 , C23C16/02 , C23C16/27 , C30B25/02 , H01L31/10 , H03H3/08 , C30B29/20
CPC分类号： C23C16/274 , C23C16/0209 , C23C16/0254 , C30B25/02 , C30B29/04
摘要： A method is presented to manufacture substrates for growing monocrystalline diamond films by chemical vapor deposition (CVD) on large area at low cost. The substrate materials are either Pt or its alloys, which have been subject to a single or multiple cycle of cleaning, roller press, and high temperature annealing processes to make the thickness of the substrate materials to 0.5 mm or less, or most preferably to 0.2 mm or less, so that either (111) crystal surfaces or inclined crystal surfaces with angular deviations within .+-.10 degrees from (111), or both, appear on the entire surfaces or at least part of the surfaces of the substrates. The annealing is carried out at a temperature above 800.degree. C. The present invention will make it possible to markedly improve various characteristics of diamond films, and hence put them into practical use.
摘要翻译：提出了一种制造用于通过化学气相沉积（CVD）在大面积上以低成本生长单晶金刚石膜的衬底的方法。衬底材料是Pt或其合金，其已经经历单次或多次清洁循环，辊压机和高温退火工艺，以使衬底材料的厚度为0.5mm或更小，或最优选为0.2 （111）或两者的角度偏差的（111）晶面或倾斜晶体表面出现在基板的整个表面或至少部分表面上。退火在高于800℃的温度下进行。本发明将可以显着改善金刚石膜的各种特性，从而将其投入实际应用中。

10. 发明授权

US5352908A Diamond Schottky diode with oxygen 失效
标题翻译：金刚石肖特基二极管与氧气
公开(公告)号：US5352908A
公开(公告)日：1994-10-04
申请号：US145307
申请日：1993-11-03
申请人： Koji Kobashi , Koichi Miyata , Kozo Nishimura
发明人： Koji Kobashi , Koichi Miyata , Kozo Nishimura
IPC分类号： H01L29/16 , H01L29/47 , H01L29/86 , H01L29/872 , H01L29/48
CPC分类号： H01L29/1602 , H01L29/872
摘要： A diamond Schottky diode including an electrically conductive substrate, a multi-layer structure of a semiconducting diamond layer and an insulating diamond layer, and a metal electrode. This diode has a greater potential barrier under a reversed bias and hence exhibits better rectifying characteristics with a smaller reverse current.
摘要翻译：包括导电衬底，半导体金刚石层和绝缘金刚石层的多层结构的金刚石肖特基二极管和金属电极。该二极管在反向偏置下具有更大的势垒，因此具有较小的反向电流的整流特性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式