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    • 14. 发明授权
    • Solid-state imaging device
    • 固态成像装置
    • US4148048A
    • 1979-04-03
    • US871252
    • 1978-01-23
    • Iwao TakemotoNorio KoikeMasaharu Kubo
    • Iwao TakemotoNorio KoikeMasaharu Kubo
    • H01L27/146H01L27/14
    • H01L27/14645H01L27/14654
    • A solid-state imaging device contains a photoelectric part in which a plurality of picture elements each consisting of a photodiode and a switching transistor are arranged in two dimensions. The picture elements are disposed on the same semiconductor substrate, and scanning circuits which scan the switching transistors of the photoelectric part in succession are provided. The solid-state imaging device further comprises a semiconductor layer which has a conductivity type opposite to that of the semiconductor substrate and which is disposed in one major surface of the semiconductor substrate and means for applying a reverse bias between the semiconductor layer and the semiconductor substrate. At least the photoelectric part is disposed within the semiconductor layer, and a high impurity concentration region which has the same conductivity type as that of the semiconductor layer and is disposed at least under a part of the photodiode.
    • 固态成像装置包括其中由光电二极管和开关晶体管组成的多个像素二维布置的光电部件。 图像元素设置在相同的半导体衬底上,并且连续地扫描光电部件的开关晶体管的扫描电路被设置。 固态成像装置还包括半导体层,其具有与半导体衬底的导电类型相反的导电类型,并且设置在半导体衬底的一个主表面中;以及用于在半导体层和半导体衬底之间施加反向偏压的装置 。 至少光电部件设置在半导体层内,高浓度区域具有与半导体层相同的导电类型,并且至少设置在光电二极管的一部分下方。
    • 16. 发明授权
    • Semiconductor device evaluation method, method of controlling the
semiconductor device production processes and recording medium
    • 半导体器件评估方法,半导体器件制造方法的控制方法和记录介质
    • US6077719A
    • 2000-06-20
    • US120890
    • 1998-07-23
    • Norio Koike
    • Norio Koike
    • G01N27/92H01L21/66G01R31/26H01L21/00
    • G01N27/92H01L22/14
    • An electric field changing in the form of a ramp waveform with the passage of time is applied to an oxide layer, and the electric current densities applied to the oxide layer at measuring points of time are measured. The electric current densities applied until the oxide layer is broken down, are integrated with respect to time, thus obtaining a total electric charge amount Qbd used up to the breakdown of the oxide layer. The total electric charge amount Qbd is divided by each of the electric current densities at the measuring points of time, thus obtaining each of the estimated values of oxide layer lifetime at the time when it is supposed that each of the electric current densities at the points of time was constantly applied. Using the field intensities and the lifetime estimated values at the common measuring points of time, there is determined a regression line in which the oxide layer lifetime estimated values are expressed in the form of a function of the field intensities. Based on the regression line, a field acceleration coefficient is determined and the oxide layer lifetime at an optional field intensity is estimated.
    • 对氧化物层施加随时间变化的斜坡波形形式的电场,测定测定时刻的氧化物层的电流密度。 施加到氧化层被分解的电流密度相对于时间被积分,从而得到直到氧化层破坏的总电荷量Qbd。 总电荷量Qbd由测量时刻的每个电流密度分开,从而获得当假定点处的每个电流密度时的氧化层寿命的估计值 的时间不断应用。 使用公共测量点处的场强度和寿命估计值,确定其中氧化物层寿命估计值以场强度的函数的形式表示的回归线。 基于回归线,确定场加速度系数,并估计可选场强下的氧化层寿命。