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1. 发明授权

US4011402A Scanning circuit to deliver train of pulses shifted by a constant delay one after another 失效
标题翻译：扫描电路一个接一个地传送一连串的脉冲
公开(公告)号：US4011402A
公开(公告)日：1977-03-08
申请号：US498656
申请日：1974-08-19
申请人： Norio Koike , Takamitsu Kamiyama , Mikio Ashikawa
发明人： Norio Koike , Takamitsu Kamiyama , Mikio Ashikawa
IPC分类号： H03K3/02 , H03K5/15 , H03L5/00 , H04N3/14 , H04N5/335 , H04N5/357 , H04N5/374 , H04N5/376 , H04N5/70 , H03K17/56 , H03K17/60
CPC分类号： H04N3/1575 , H04N3/1581
摘要： In a scanning circuit having a plurality of cascade-connected unit circuits driven only by direct current, each unit circuit consisting of at least a pair of polarity inverting circuits, a train of output pulses shifted by a constant delay one after another depending upon the delay time proper to the unit circuits, are derived from the unit circuits by applying an input pulse to the first stage of the scanning circuit.
摘要翻译：在具有由直流电驱动的多个级联连接单元电路的扫描电路中，由至少一对极性反转电路组成的每个单位电路，根据延迟一个接一个地移位恒定延迟的一串输出脉冲通过向扫描电路的第一级施加输入脉冲，从单元电路导出单元电路的时间。

2. 发明授权

US4908684A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4908684A
公开(公告)日：1990-03-13
申请号：US70552
申请日：1987-07-07
申请人： Norio Koike , Toshifumi Ozaki , Masaaki Nakai , Haruhisa Ando , Shinya Ohba , Hideyuki Ono , Hajime Akimoto , Hajime Kinugasa
发明人： Norio Koike , Toshifumi Ozaki , Masaaki Nakai , Haruhisa Ando , Shinya Ohba , Hideyuki Ono , Hajime Akimoto , Hajime Kinugasa
IPC分类号： H01L27/146 , H01L27/148
CPC分类号： H01L27/14887
摘要： A solid-state imaging device includes a vertical CCD shift register for transferring electric charge. The electrode of the vertical CCD located nearest to the substrate is extended outside of the region of the vertical CCD to a region of a layer where isolation is required. The layer is thus imparted with two functions, that is, the function of the CCD electrode and that of the iolation electrode. An overflow transistor is also provided to discharge excess charge produced by high intensity light.
摘要翻译：固态成像装置包括用于传送电荷的垂直CCD移位寄存器。位于最靠近基板的垂直CCD的电极在垂直CCD的区域的外部延伸到需要隔离的层的区域。因此，该层具有两种功能，即CCD电极和绝缘电极的功能。还提供溢流晶体管以排出由高强度光产生的过量电荷。

3. 发明授权

US4748017A Method for manufacturing lepidocrocite 失效
标题翻译：菱镁矿生产方法
公开(公告)号：US4748017A
公开(公告)日：1988-05-31
申请号：US4942
申请日：1987-01-20
申请人： Yasushi Matsui , Toshinori Kamisaka , Takahiko Goto , Kenichi Okazaki , Norio Koike
发明人： Yasushi Matsui , Toshinori Kamisaka , Takahiko Goto , Kenichi Okazaki , Norio Koike
IPC分类号： H01F1/032 , C01G49/02 , C01G49/06 , G11B5/706 , H01F1/11
CPC分类号： G11B5/70642 , C01G49/06 , C01P2006/12 , C01P2006/42
摘要： Lepidocrocite suitable for obtaining excellent magnetic powders and magnetic recording media is manufactured by oxidizing an aqueous suspension of ferrous hydroxide obtained from a ferrous salt and an alkali by blowing an amount of an oxygen-containing gas into the suspension, in which the blowing amount of the oxygen-containing gas is appropriately controlled in three steps, according to three steps of the oxidation reaction of the ferrous hydroxide. In a preferred embodiment, average oxygen absorption rates in the three oxidization steps are defined and the blowing of the oxygen-containing gas is controlled thereby.
摘要翻译：适用于获得优异的磁粉和磁记录介质的扁平球墨水是通过将由亚铁盐和碱获得的氢氧化亚铁的水悬浮液通过向悬浮液中吹入一定量的含氧气体而制成的，其中，根据氢氧化亚铁的氧化反应的三个步骤，三个步骤适当地控制含氧气体。在优选的实施方案中，限定了三个氧化步骤中的平均氧吸收速率，并且由此控制含氧气体的吹送。

4. 发明授权

US4729846A Method for manufacturing lepidocrocite 失效
标题翻译：菱镁矿生产方法
公开(公告)号：US4729846A
公开(公告)日：1988-03-08
申请号：US4943
申请日：1987-01-20
申请人： Yasushi Matsui , Norio Koike , Kunio Takahashi , Hiroshi Matsue
发明人： Yasushi Matsui , Norio Koike , Kunio Takahashi , Hiroshi Matsue
IPC分类号： H01F1/11 , C01G49/02 , C01G49/06
CPC分类号： C01G49/06 , C01P2004/52 , C01P2006/42
摘要： Lepidocrocite (.gamma.-FeOOH) with an large specific surface area and a uniform particle size is provided by a method comprising preparing a suspension of ferrous hydroxide at a pH of 6.5 to 7.5 by adding a ferrous salt solution with an alkali solution in an amount of 0.4 to 0.7 times the theoretical amount for converting all the ferrous salt to ferrous hydroxide, blowing an oxygen-containing gas into the suspension to form a seed crystal of .gamma.-FeOOH, completing the generation reaction of .gamma.-FeOOH by blowing an oxygen-containing gas into the suspension while adding an alkali solution to keep the pH of the suspension within a range of 3 to 5, in which an Si concentration of the suspensions for seed reaction and for generation reaction of .gamma.-FeOOH is controlled to be within 5 to 30 ppm.
摘要翻译：通过以下方法提供具有大的比表面积和均匀粒径的鳞状赤铁矿（γ-FeOOH），该方法包括通过将亚铁盐溶液与碱溶液一起加入至pH 6.5至7.5的方法制备氢氧化亚铁悬浮液将所有亚铁盐转化为氢氧化亚铁的理论量的0.4〜0.7倍，向混悬液中吹入含氧气体，形成γ-FeOOH晶种，通过吹入含氧气体完成γ-FeOOH的发生反应将气体加入到悬浮液中，同时加入碱溶液以将悬浮液的pH保持在3至5的范围内，其中用于种子反应的悬浮液和γ-FeOOH的发生反应的Si浓度被控制在5〜 30 ppm。

5. 发明授权

US4675887A Solid state imaging device and method with row-by-row charge transfer 失效
标题翻译：固态成像装置和逐行电荷转移方法
公开(公告)号：US4675887A
公开(公告)日：1987-06-23
申请号：US736259
申请日：1985-05-21
申请人： Toshiyuki Akiyama , Norio Koike , Kenji Ito , Takeshi Ogino , Shuusaku Nagahara
发明人： Toshiyuki Akiyama , Norio Koike , Kenji Ito , Takeshi Ogino , Shuusaku Nagahara
IPC分类号： H01L27/14 , H01L27/148 , H04N5/335 , H04N5/341 , H04N5/355 , H04N5/359 , H04N5/3728 , H04N5/374 , G11C19/28 , H01L29/78 , H01L31/00
CPC分类号： H04N3/1568
摘要： A solid stage imaging device, in which photodiodes each capable of converting incident light into a electric charge and accumulating the electric charge are arranged regularly in a matrix, e.g. in horizontal and vertical directions, and electric charges of the photodiodes are sent to the outside by means of CCD's, includes a scanning circuit which scans switching MOS transistors for transferring the electric charges of the photodiodes to vertical CCD's, in a vertical direction so that switching MOS transistors in a row parallel to a horizontal direction can be driven independently of switching MOS transistors in another row. When the solid state imaging device is driven, an operation for transferring an electric charge in each vertical CCD and an operation for driving switching MOS transistors in the next row with the aid of the scanning circuit are alternately performed, to reduce the amount of smear and to increase the dynamic range of each vertical CCD, without increasing the number of CCD's used.
摘要翻译：一种固体级成像装置，其中将能够将入射光转换成电荷并累积电荷的光电二极管规则地布置在矩阵中，例如，在水平和垂直方向上，光电二极管的电荷通过CCD发送到外部，包括扫描电路，扫描开关MOS晶体管，用于沿垂直方向扫描光电二极管的电荷到垂直CCD，以便切换与水平方向平行的MOS晶体管可以独立于另一行中的开关MOS晶体管而被驱动。当固态成像装置被驱动时，交替执行用于在每个垂直CCD中传送电荷的操作和用于驱动下一行中的开关MOS晶体管的操作，以减少涂抹量和增加每个垂直CCD的动态范围，而不增加CCD使用的数量。

6. 发明授权

US4651054A Color picture tube 失效
标题翻译：彩色显像管
公开(公告)号：US4651054A
公开(公告)日：1987-03-17
申请号：US616896
申请日：1984-06-04
申请人： Takeo Itou , Norio Koike , Seiji Sagow
发明人： Takeo Itou , Norio Koike , Seiji Sagow
IPC分类号： C09K11/08 , C09K11/84 , H01J29/18 , H01J29/20
CPC分类号： H01J29/187
摘要： A color picture tube fitted with a phosphor screen formed of a green-emitting phosphor prepared from copper and aluminum-activated zinc sulfide, a red-emitting phosphor prepared from europium-activated yttrium oxysulfide, and a blue-emitting phosphor prepared from silver-activated zinc sulfide, and wherein the copper concentration ranges between 0.01 and 0.03% by weight and the europium concentration ranges between 5.1 and 6.1% by weight.
摘要翻译：配有由铜和铝活化硫化锌制成的绿色发光荧光体形成的荧光屏的彩色显像管，由铕激活的氧化硫化钇制成的红色发射荧光体和由银活化的蓝色荧光体硫化锌，其中铜浓度为0.01〜0.03重量％，铕的浓度为5.1〜6.1重量％。

7. 发明授权

US4514766A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4514766A
公开(公告)日：1985-04-30
申请号：US482791
申请日：1983-04-07
申请人： Norio Koike , Iwao Takemoto , Shinya Ohba , Toshiaki Masuhara , Masaharu Kubo
发明人： Norio Koike , Iwao Takemoto , Shinya Ohba , Toshiaki Masuhara , Masaharu Kubo
IPC分类号： H04N5/345 , H04N5/372 , H04N5/3728 , H04N3/15
CPC分类号： H04N3/1575 , H01L27/14856 , H04N3/1537
摘要： A solid-state imaging device is provided which employs CCDs as vertical shift registers and a horizontal shift register for vertically and horizontally scanning and reading out a large number of photoelectric elements arrayed in a two-dimensional plane. The imaging device is characterized in that the photoelectric elements of each column arranged between the vertical shift registers are alternately connected to the right and left vertical shift registers. This results in the resolution of the device being enhanced sharply.
摘要翻译：提供了一种使用CCD作为垂直移位寄存器的固态成像装置和用于垂直和水平扫描并读出排列在二维平面中的大量光电元件的水平移位寄存器。成像装置的特征在于，布置在垂直移位寄存器之间的每列的光电元件交替地连接到左右垂直移位寄存器。这导致设备的分辨率急剧增加。

8. 发明授权

US4424265A Method of making picture tube fluorescent screen 失效
标题翻译：制造显像管荧光屏的方法
公开(公告)号：US4424265A
公开(公告)日：1984-01-03
申请号：US419628
申请日：1982-09-20
申请人： Norio Koike , Kunihiro Ikari
发明人： Norio Koike , Kunihiro Ikari
IPC分类号： C09K11/02 , G03F7/032 , G03F7/038 , H01J29/18 , H01J29/20 , G03C5/00
CPC分类号： G03F7/032 , G03F7/038
摘要： There are disclosed a composition for making a picture tube fluorescent screen characterized by essentially consisting of a light-sensitive resin at least having recurring units (1) and (2) represented by the formulas: ##STR1## wherein R and X.sup.- have the same meanings as defined in the specification, and CaS-based phosphor particles which are dispersed in an aqueous medium, and a method of making a picture tube fluorescent screen using the same. According to this invention, it is possible to make a picture tube exhibiting an excellent light emitting efficiency and a contrast by a simple process.
摘要翻译：公开了一种用于制造显像管荧光屏的组合物，其特征在于基本上由至少具有由下式表示的重复单元（1）和（2）的光敏树脂组成：＆lt; IMAGE＆gt;（1）＆lt; IMAGE＆gt; ）其中R和X具有与说明书中所定义的相同的含义，以及分散在水性介质中的CaS基荧光体颗粒，以及使用其形成显像管荧光屏的方法。根据本发明，可以通过简单的工艺制造显示出优异的发光效率和对比度的显像管。

9. 发明授权

US4209806A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4209806A
公开(公告)日：1980-06-24
申请号：US928734
申请日：1978-07-27
申请人： Norio Koike , Iwao Takemoto , Toshiyuki Akiyama , Haruhisa Ando , Shinya Ohba , Masatada Horiuchi , Masaharu Kubo
发明人： Norio Koike , Iwao Takemoto , Toshiyuki Akiyama , Haruhisa Ando , Shinya Ohba , Masatada Horiuchi , Masaharu Kubo
IPC分类号： H01L27/088 , H01L27/146 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/372 , H04N5/374 , H04N3/14 , H01L27/14 , H01L29/78
CPC分类号： H01L27/14643 , H01L27/088
摘要： In a solid-state imaging device wherein a plurality of photoelectric conversion elements, horizontal and vertical scanning circuits for addressing the photoelectric conversion elements, and horizontal and vertical switching transistors are comprised in a major surface region of an N (or P)-type semiconductor body, a solid-state imaging device characterized in that a plurality of P (or N)-type impurity layers isolated from one another are disposed in the major surface region of the semiconductor body, that the switching transistors and the photoelectric conversion elements are integrated in one of the impurity layers, the horizontal scanning circuit being integrated in another impurity layer, the vertical scanning circuit being integrated in still another impurity layer, and that predetermined voltages are applied to electrodes disposed on the respective impurity layers.
摘要翻译：在其中多个光电转换元件，用于寻址光电转换元件的水平和垂直扫描电路以及水平和垂直开关晶体管的固态成像器件包括在N（或P）型半导体的主表面区域中其特征在于，在所述半导体主体的主表面区域设置有彼此隔离的多个P（或N）型杂质层，所述开关晶体管和所述光电转换元件被集成在一个杂质层中，水平扫描电路集成在另一个杂质层中，垂直扫描电路集成在另一个杂质层中，并且预定电压施加到设置在各个杂质层上的电极。

10. 发明授权

US4148048A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4148048A
公开(公告)日：1979-04-03
申请号：US871252
申请日：1978-01-23
申请人： Iwao Takemoto , Norio Koike , Masaharu Kubo
发明人： Iwao Takemoto , Norio Koike , Masaharu Kubo
IPC分类号： H01L27/146 , H01L27/14
CPC分类号： H01L27/14645 , H01L27/14654
摘要： A solid-state imaging device contains a photoelectric part in which a plurality of picture elements each consisting of a photodiode and a switching transistor are arranged in two dimensions. The picture elements are disposed on the same semiconductor substrate, and scanning circuits which scan the switching transistors of the photoelectric part in succession are provided. The solid-state imaging device further comprises a semiconductor layer which has a conductivity type opposite to that of the semiconductor substrate and which is disposed in one major surface of the semiconductor substrate and means for applying a reverse bias between the semiconductor layer and the semiconductor substrate. At least the photoelectric part is disposed within the semiconductor layer, and a high impurity concentration region which has the same conductivity type as that of the semiconductor layer and is disposed at least under a part of the photodiode.
摘要翻译：固态成像装置包括其中由光电二极管和开关晶体管组成的多个像素二维布置的光电部件。图像元素设置在相同的半导体衬底上，并且连续地扫描光电部件的开关晶体管的扫描电路被设置。固态成像装置还包括半导体层，其具有与半导体衬底的导电类型相反的导电类型，并且设置在半导体衬底的一个主表面中;以及用于在半导体层和半导体衬底之间施加反向偏压的装置。至少光电部件设置在半导体层内，高浓度区域具有与半导体层相同的导电类型，并且至少设置在光电二极管的一部分下方。

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