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1. 发明授权

US4277799A Color solid-state imaging device 失效
标题翻译：彩色固态成像装置
公开(公告)号：US4277799A
公开(公告)日：1981-07-07
申请号：US923982
申请日：1978-07-12
申请人： Norio Koike , Iwao Takemoto , Masaharu Kubo , Kazuhiro Sato , Shusaku Nagahara
发明人： Norio Koike , Iwao Takemoto , Masaharu Kubo , Kazuhiro Sato , Shusaku Nagahara
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/357 , H04N5/372 , H04N5/374 , H04N9/04 , H04N9/07
CPC分类号： H01L27/14643 , H01L27/14645 , H04N3/1512 , H04N9/045
摘要： A color solid-state imaging device is provided with a plurality of signal output lines for reading out signals derived from photoelectric conversion elements which form picture elements for red, green, and blue lights arranged in, for example, a checkered pattern.
摘要翻译：彩色固态成像装置设置有多条信号输出线，用于读出从形成例如格子图案的红色，绿色和蓝色光的图像元素的光电转换元件导出的信号。

2. 发明授权

US4148051A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4148051A
公开(公告)日：1979-04-03
申请号：US874939
申请日：1978-02-03
申请人： Norio Koike , Iwao Takemoto , Masaharu Kubo
发明人： Norio Koike , Iwao Takemoto , Masaharu Kubo
IPC分类号： H01L21/8234 , H01L27/146 , H01L31/113 , H04N5/335 , H04N5/369 , H04N5/374 , H01L27/14
CPC分类号： H01L31/1136 , H01L21/823406 , H01L27/14643 , H01L27/14645
摘要： In a solid-state imaging device wherein at least one pn-junction photodiode and photo-signal detecting means adjacent thereto are disposed in a surface portion of a semiconductor substrate of one conductivity type, a solid-state imaging device characterized in that at least one window region is disposed within a semiconductor region which constitutes said photodiode and which has the opposite conductivity type to that of said semiconductor substrate, said window region "hollowing" said semiconductor region up to the surface of said semiconductor substrate and being made of a part of said semiconductor substrate.
摘要翻译：在其中至少一个pn结光电二极管和与其相邻的光信号检测装置设置在一种导电类型的半导体衬底的表面部分中的固态成像装置中，其特征在于至少一个窗口区域设置在构成所述光电二极管并且具有与所述半导体衬底的导电类型相反的导电类型的半导体区域内，所述窗口区域“中空”所述半导体区域直到所述半导体衬底的表面，并且由所述半导体区域的一部分所述半导体衬底。

3. 发明授权

US4514766A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4514766A
公开(公告)日：1985-04-30
申请号：US482791
申请日：1983-04-07
申请人： Norio Koike , Iwao Takemoto , Shinya Ohba , Toshiaki Masuhara , Masaharu Kubo
发明人： Norio Koike , Iwao Takemoto , Shinya Ohba , Toshiaki Masuhara , Masaharu Kubo
IPC分类号： H04N5/345 , H04N5/372 , H04N5/3728 , H04N3/15
CPC分类号： H04N3/1575 , H01L27/14856 , H04N3/1537
摘要： A solid-state imaging device is provided which employs CCDs as vertical shift registers and a horizontal shift register for vertically and horizontally scanning and reading out a large number of photoelectric elements arrayed in a two-dimensional plane. The imaging device is characterized in that the photoelectric elements of each column arranged between the vertical shift registers are alternately connected to the right and left vertical shift registers. This results in the resolution of the device being enhanced sharply.
摘要翻译：提供了一种使用CCD作为垂直移位寄存器的固态成像装置和用于垂直和水平扫描并读出排列在二维平面中的大量光电元件的水平移位寄存器。成像装置的特征在于，布置在垂直移位寄存器之间的每列的光电元件交替地连接到左右垂直移位寄存器。这导致设备的分辨率急剧增加。

4. 发明授权

US4209806A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4209806A
公开(公告)日：1980-06-24
申请号：US928734
申请日：1978-07-27
申请人： Norio Koike , Iwao Takemoto , Toshiyuki Akiyama , Haruhisa Ando , Shinya Ohba , Masatada Horiuchi , Masaharu Kubo
发明人： Norio Koike , Iwao Takemoto , Toshiyuki Akiyama , Haruhisa Ando , Shinya Ohba , Masatada Horiuchi , Masaharu Kubo
IPC分类号： H01L27/088 , H01L27/146 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/372 , H04N5/374 , H04N3/14 , H01L27/14 , H01L29/78
CPC分类号： H01L27/14643 , H01L27/088
摘要： In a solid-state imaging device wherein a plurality of photoelectric conversion elements, horizontal and vertical scanning circuits for addressing the photoelectric conversion elements, and horizontal and vertical switching transistors are comprised in a major surface region of an N (or P)-type semiconductor body, a solid-state imaging device characterized in that a plurality of P (or N)-type impurity layers isolated from one another are disposed in the major surface region of the semiconductor body, that the switching transistors and the photoelectric conversion elements are integrated in one of the impurity layers, the horizontal scanning circuit being integrated in another impurity layer, the vertical scanning circuit being integrated in still another impurity layer, and that predetermined voltages are applied to electrodes disposed on the respective impurity layers.
摘要翻译：在其中多个光电转换元件，用于寻址光电转换元件的水平和垂直扫描电路以及水平和垂直开关晶体管的固态成像器件包括在N（或P）型半导体的主表面区域中其特征在于，在所述半导体主体的主表面区域设置有彼此隔离的多个P（或N）型杂质层，所述开关晶体管和所述光电转换元件被集成在一个杂质层中，水平扫描电路集成在另一个杂质层中，垂直扫描电路集成在另一个杂质层中，并且预定电压施加到设置在各个杂质层上的电极。

5. 发明授权

US4148048A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4148048A
公开(公告)日：1979-04-03
申请号：US871252
申请日：1978-01-23
申请人： Iwao Takemoto , Norio Koike , Masaharu Kubo
发明人： Iwao Takemoto , Norio Koike , Masaharu Kubo
IPC分类号： H01L27/146 , H01L27/14
CPC分类号： H01L27/14645 , H01L27/14654
摘要： A solid-state imaging device contains a photoelectric part in which a plurality of picture elements each consisting of a photodiode and a switching transistor are arranged in two dimensions. The picture elements are disposed on the same semiconductor substrate, and scanning circuits which scan the switching transistors of the photoelectric part in succession are provided. The solid-state imaging device further comprises a semiconductor layer which has a conductivity type opposite to that of the semiconductor substrate and which is disposed in one major surface of the semiconductor substrate and means for applying a reverse bias between the semiconductor layer and the semiconductor substrate. At least the photoelectric part is disposed within the semiconductor layer, and a high impurity concentration region which has the same conductivity type as that of the semiconductor layer and is disposed at least under a part of the photodiode.
摘要翻译：固态成像装置包括其中由光电二极管和开关晶体管组成的多个像素二维布置的光电部件。图像元素设置在相同的半导体衬底上，并且连续地扫描光电部件的开关晶体管的扫描电路被设置。固态成像装置还包括半导体层，其具有与半导体衬底的导电类型相反的导电类型，并且设置在半导体衬底的一个主表面中;以及用于在半导体层和半导体衬底之间施加反向偏压的装置。至少光电部件设置在半导体层内，高浓度区域具有与半导体层相同的导电类型，并且至少设置在光电二极管的一部分下方。

6. 发明授权

US4295055A Circuit for generating scanning pulses 失效
标题翻译：用于产生扫描脉冲的电路
公开(公告)号：US4295055A
公开(公告)日：1981-10-13
申请号：US46028
申请日：1979-06-06
申请人： Iwao Takemoto , Norio Koike , Shinya Ohba , Haruhisa Ando , Masaaki Nakai , Syoji Hanamura , Ryuichi Izawa , Masaharu Kubo , Masakazu Aoki , Shuhei Tanaka
发明人： Iwao Takemoto , Norio Koike , Shinya Ohba , Haruhisa Ando , Masaaki Nakai , Syoji Hanamura , Ryuichi Izawa , Masaharu Kubo , Masakazu Aoki , Shuhei Tanaka
IPC分类号： G11C19/00 , G11C19/18 , G11C19/28 , H01L27/146 , H01L31/10 , H03K5/15 , H04N3/14
CPC分类号： H03K5/15093 , G11C19/184 , G11C19/28
摘要： A circuit for generating scanning pulses comprising a plurality of stages of basic circuits connected in series, said each basic circuit comprising first, second and third insulated gate field-effect transistors (MISTs) each of which has first and second terminals each being either of source and drain terminals and a gate terminal, said first terminal of said first MIST being used as a clock pulse-applying terminal, said gate terminal of said first MIST being used as an input terminal, said second terminal of said first MIST and said first terminal and said gate terminal of said second MIST being connected and used as a scanning pulse output terminal, said second terminal of said second MIST and said first terminal of said third MIST being connected and used as an output terminal, said second terminal of said third MIST being used as a ground terminal, said gate terminal of said third MIST being used as a feedback input terminal.
摘要翻译：一种用于产生扫描脉冲的电路，包括串联连接的多级基本电路，所述每个基本电路包括第一，第二和第三绝缘栅极场效应晶体管（MIST），每个绝缘栅场效应晶体管的第一和第二端子均为源极所述第一MIST的所述第一端子用作时钟脉冲施加端子，所述第一MIST的所述栅极端子用作输入端子，所述第一MIST的所述第二端子和所述第一端子的所述第一端子并且所述第二MIST的所述栅极端子被连接并用作扫描脉冲输出端子，所述第二MIST的所述第二端子和所述第三MIST的所述第一端子被连接并用作输出端子，所述第三MIST的所述第二端子被用作接地端子，所述第三MIST的所述栅极端子用作反馈输入端子。

7. 发明授权

US4223330A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4223330A
公开(公告)日：1980-09-16
申请号：US5567
申请日：1979-01-22
申请人： Norio Koike , Iwao Takemoto , Shinya Ohba , Masaharu Kubo , Shuhei Tanaka
发明人： Norio Koike , Iwao Takemoto , Shinya Ohba , Masaharu Kubo , Shuhei Tanaka
IPC分类号： H01L27/146 , H04N5/335 , H04N5/359 , H04N5/374 , H01L27/14 , H01L29/78
CPC分类号： H01L27/14654
摘要： In a solid-state imaging device having, in one major surface region of a semiconductor substrate, photoelectric conversion elements which are disposed in a two-dimensional array, vertical switching metal-insulator-semiconductor field effect transistors and horizontal switching metal-insulator-semiconductor field effect transistors which select the photoelectric conversion elements, and vertical and horizontal scanning circuits which turn the switching transistors "on" and "off," a solid-state imaging device characterized in that the vertical switching metal-insulator-semiconductor field effect transistors which are not selected are placed into a deeper cutoff state, i.e., the major surface regions of the semiconductor substrate corresponding to gate electrodes of these vertical switching metal-insulator-semiconductor field effect transistors are placed at an accumulation level.
摘要翻译：在具有在半导体衬底的一个主表面区域中设置为二维阵列的光电转换元件的立体成像器件中，垂直开关金属 - 绝缘体 - 半导体场效应晶体管和水平开关金属 - 绝缘体半导体选择光电转换元件的场效应晶体管以及使开关晶体管“导通”和“截止”的垂直和水平扫描电路，其特征在于垂直开关金属 - 绝缘体半导体场效应晶体管未选择的位置被置于更深的截止状态，即，对应于这些垂直开关金属 - 绝缘体 - 半导体场效应晶体管的栅极的半导体衬底的主表面区域被放置在累积水平。

8. 发明授权

US4032952A Bulk charge transfer semiconductor device 失效
标题翻译：大容量充电传输半导体器件
公开(公告)号：US4032952A
公开(公告)日：1977-06-28
申请号：US347426
申请日：1973-04-03
申请人： Shinya Ohba , Iwao Takemoto , Masaharu Kubo
发明人： Shinya Ohba , Iwao Takemoto , Masaharu Kubo
IPC分类号： H01L29/10 , H01L29/768 , H01L
CPC分类号： H01L29/7685 , H01L29/1062 , H01L29/76833 , H01L29/76841 , Y10S148/08
摘要： In a charge transfer semiconductor device majority carriers are transferred within a semiconductor body on a substrate from means for introducing majority carriers to means for detecting transferred majority carriers by applying pulsed voltages to a series of electrodes disposed on an insulating layer which is disposed on one surface of the semiconductor body between the introducing means and the detecting means. Depletion regions are formed within the semiconductor body, so that one end of a depletion region below one electrode reaches the substrate and another end of a depletion region below an electrode next to the one electrode does not reach the substrate, whereby majority carriers below the one electrode are pushed out below the next electrode.

9. 发明授权

US4316205A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4316205A
公开(公告)日：1982-02-16
申请号：US119383
申请日：1980-02-07
申请人： Masakazu Aoki , Iwao Takemoto , Masaharu Kubo , Ryuichi Izawa
发明人： Masakazu Aoki , Iwao Takemoto , Masaharu Kubo , Ryuichi Izawa
IPC分类号： H01L27/146 , H01L31/113 , H04N5/335 , H04N5/374 , H01L27/14
CPC分类号： H01L31/1136 , H01L27/14643
摘要： In a solid-state imaging device having in one major surface region of a monolithic semiconductor body, photodiodes which are arrayed in two dimensions, vertical switching MOS transistors and horizontal switching MOS transistors which address the photodiodes, MOS transistors which constitute vertical and horizontal scanning circuits for turning "on" and "off" the switching MOS transistors, and MOS transistors which constitute other peripheral circuitry, the photodiodes being constructed of source regions of the vertical switching MOS transistors and the semiconductor body; a solid-state imaging device characterized in that among source and drain regions of the various MOS transistors, the source regions of the vertical switching MOS transistors are lower in the surface impurity concentration and deeper in the junction depth than the other source and drain regions.
摘要翻译：在具有单片半导体主体的一个主表面区域的固态成像装置中，以二维排列的光电二极管，构成光电二极管的垂直开关MOS晶体管和水平开关MOS晶体管，构成垂直和水平扫描电路的MOS晶体管为了使开关MOS晶体管“开”和“关”，构成其它外围电路的MOS晶体管，该光电二极管由垂直开关MOS晶体管和半导体本体的源极区构成; 一种固态成像装置，其特征在于，在各种MOS晶体管的源极和漏极区域中，垂直开关MOS晶体管的源极区域的表面杂质浓度较低，并且结深度比其他源极和漏极区域更深。

10. 发明授权

US4301477A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4301477A
公开(公告)日：1981-11-17
申请号：US120115
申请日：1980-02-11
申请人： Iwao Takemoto , Masaharu Kubo , Shinya Ohba , Shuhei Tanaka , Masakazu Aoki
发明人： Iwao Takemoto , Masaharu Kubo , Shinya Ohba , Shuhei Tanaka , Masakazu Aoki
IPC分类号： H01L27/146 , H04N5/335 , H04N5/365 , H04N5/374 , H04N5/30 , H04N3/14
CPC分类号： H04N5/2173 , H01L27/14643 , H04N3/1568
摘要： In a solid-state imaging device comprising photodiodes arranged in a two-dimensional array, vertical and horizontal switching MOS transistors for selecting the photodiodes, vertical and horizontal scanning circuits for supplying scanning pulses to the gate electrodes of the vertical and horizontal switching MOS transistors respectively, a signal switching gate MOS transistor is connected between a signal output terminal and a horizontal signal output line connecting in common the horizontal switching MOS transistors.
摘要翻译：在包括以二维阵列布置的光电二极管的固态成像装置中，用于选择光电二极管的垂直和水平切换MOS晶体管，分别向垂直和水平开关MOS晶体管的栅电极提供扫描脉冲的垂直和水平扫描电路信号切换栅极MOS晶体管连接在水平开关MOS晶体管共同连接的信号输出端子和水平信号输出线之间。

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