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1. 发明授权

US4209806A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4209806A
公开(公告)日：1980-06-24
申请号：US928734
申请日：1978-07-27
申请人： Norio Koike , Iwao Takemoto , Toshiyuki Akiyama , Haruhisa Ando , Shinya Ohba , Masatada Horiuchi , Masaharu Kubo
发明人： Norio Koike , Iwao Takemoto , Toshiyuki Akiyama , Haruhisa Ando , Shinya Ohba , Masatada Horiuchi , Masaharu Kubo
IPC分类号： H01L27/088 , H01L27/146 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/372 , H04N5/374 , H04N3/14 , H01L27/14 , H01L29/78
CPC分类号： H01L27/14643 , H01L27/088
摘要： In a solid-state imaging device wherein a plurality of photoelectric conversion elements, horizontal and vertical scanning circuits for addressing the photoelectric conversion elements, and horizontal and vertical switching transistors are comprised in a major surface region of an N (or P)-type semiconductor body, a solid-state imaging device characterized in that a plurality of P (or N)-type impurity layers isolated from one another are disposed in the major surface region of the semiconductor body, that the switching transistors and the photoelectric conversion elements are integrated in one of the impurity layers, the horizontal scanning circuit being integrated in another impurity layer, the vertical scanning circuit being integrated in still another impurity layer, and that predetermined voltages are applied to electrodes disposed on the respective impurity layers.
摘要翻译：在其中多个光电转换元件，用于寻址光电转换元件的水平和垂直扫描电路以及水平和垂直开关晶体管的固态成像器件包括在N（或P）型半导体的主表面区域中其特征在于，在所述半导体主体的主表面区域设置有彼此隔离的多个P（或N）型杂质层，所述开关晶体管和所述光电转换元件被集成在一个杂质层中，水平扫描电路集成在另一个杂质层中，垂直扫描电路集成在另一个杂质层中，并且预定电压施加到设置在各个杂质层上的电极。

2. 发明授权

US4577231A High sensitivity solid-state imaging device 失效
标题翻译：高灵敏度固态成像装置
公开(公告)号：US4577231A
公开(公告)日：1986-03-18
申请号：US476415
申请日：1983-03-17
申请人： Shinya Ohba , Haruhisa Ando , Masaaki Nakai , Toshifumi Ozaki , Koichi Seki , Kenji Takahashi , Toshiyuki Akiyama , Iwao Takemoto , Takuya Imaide , Akihide Okuda , Masaharu Kubo
发明人： Shinya Ohba , Haruhisa Ando , Masaaki Nakai , Toshifumi Ozaki , Koichi Seki , Kenji Takahashi , Toshiyuki Akiyama , Iwao Takemoto , Takuya Imaide , Akihide Okuda , Masaharu Kubo
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/365 , H04N5/372 , H04N3/14
CPC分类号： H04N3/1512 , H01L27/14643
摘要： Disclosed is a two-dimensionally arrayed solid-state imaging device for a television camera having a photodiode array arranged at a photo-sensing section and a readout horizontal register constructed by a charge transfer device (CTD) such as a BCD, CCD or BBD. An inverter circuit is provided for each of the vertical signal lines. An input of the inverter circuit is connected to a vertical signal line drain of at least one transfer transistor arranged between the vertical signal line and the CTD, and an output of the inverter circuit is connected to a gate of the transfer transistor. Transfer efficiency is improved by the insertion of the inverter circuit and fixed pattern noise is substantially reduced by supplying bias currents.
摘要翻译：公开了一种用于电视摄像机的二维阵列固态成像装置，其具有布置在感光部分的光电二极管阵列和由诸如BCD，CCD或BBD的电荷转移装置（CTD）构成的读出水平寄存器。为每条垂直信号线提供一个反相器电路。逆变器电路的输入端连接在布置在垂直信号线和CTD之间的至少一个传输晶体管的垂直信号线漏极，反相器电路的输出端连接到转移晶体管的栅极。通过插入逆变器电路来提高转移效率，并且通过提供偏置电流大大减少固定图案噪声。

3. 发明授权

US4532549A Solid-state imaging device with high quasi-signal sweep-out efficiency and high signal charge transfer efficiency 失效
标题翻译：具有高准信号扫频效率和高信号电荷转移效率的固态成像装置
公开(公告)号：US4532549A
公开(公告)日：1985-07-30
申请号：US473865
申请日：1983-03-10
申请人： Toshifumi Ozaki , Shinya Ohba , Iwao Takemoto , Masaaki Nakai , Haruhisa Ando , Shusaku Nagahara , Takuya Imaide , Kenji Takahashi , Toshiyuki Akiyama
发明人： Toshifumi Ozaki , Shinya Ohba , Iwao Takemoto , Masaaki Nakai , Haruhisa Ando , Shusaku Nagahara , Takuya Imaide , Kenji Takahashi , Toshiyuki Akiyama
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/365 , H04N5/369 , H04N5/372 , H04N5/374 , H04N5/378 , H04N5/30
CPC分类号： H01L27/14643
摘要： Disclosed is a solid-state imaging device wherein optical information of a number of photo-electric conversion elements arranged in a matrix is read into vertical signal lines by a vertical shift register and then the optical information on the vertical signal lines is horizontally scanned by a horizontal register of a charge transfer device. Bias charge storage means and quasi-signal sweep-out drains are disposed between the horizontal register and the vertical signal lines, and a bias charge input means is arranged in the horizontal register. In order to ensure high efficiency in transferring signals between the vertical lines to the storage means, the sweep-out drains and the charge transfer device, it is arranged for bias charges to be provided at each stage of transfer. Thus, bias charges supplied from the storage means are used to transfer charges from the vertical lines to the storage means. Similarly bias charges directly injected from the quasi-signal sweep-out drains are used to sweep out quasi-signals from the storage means to the quasi-signal sweep-out drains. Finally bias charges supplied from the bias charge input means of the charge transfer device are used to read signals from the storage means into the charge transfer device. By virtue of this, the sweep-out efficiency of the quasi-signals from the capacitances which supply the bias charges and a read-out efficiency of the signal charges are enhanced and a high quality of video signal is produced.
摘要翻译：公开了一种固态成像装置，其中以矩阵形式布置的多个光电转换元件的光学信息被垂直移位寄存器读入垂直信号线，然后垂直信号线上的光信息被水平扫描电荷转移装置的水平寄存器。偏置电荷存储装置和准信号扫除漏极设置在水平寄存器和垂直信号线之间，偏置电荷输入装置布置在水平寄存器中。为了确保在垂直线之间向存储装置，扫除漏极和电荷转移装置传输信号的高效率，布置为在每个转移阶段提供偏置电荷。因此，使用从存储装置提供的偏置电荷将电荷从垂直线传送到存储装置。类似地，从准信号扫除漏极直接注入的偏置电荷用于将准信号从存储装置扫除到准信号扫除漏极。最后，从电荷转移装置的偏置电荷输入装置提供的偏置电荷用于从存储装置读取信号到电荷转移装置中。由此，来自提供偏置电荷的电容的准信号的扫除效率和信号电荷的读出效率被增强，并且产生高质量的视频信号。

4. 发明授权

US4407010A Solid state image pickup device 失效
标题翻译：固态图像拾取装置
公开(公告)号：US4407010A
公开(公告)日：1983-09-27
申请号：US290570
申请日：1981-08-06
申请人： Toru Baji , Toshihisa Tsukada , Norio Koike , Toshiyuki Akiyama , Iwao Takemoto , Shigeru Shimada , Chushirou Kusano , Shinya Ohba , Haruo Matsumaru
发明人： Toru Baji , Toshihisa Tsukada , Norio Koike , Toshiyuki Akiyama , Iwao Takemoto , Shigeru Shimada , Chushirou Kusano , Shinya Ohba , Haruo Matsumaru
IPC分类号： H01L27/14 , H01L21/8234 , H01L23/62 , H01L23/64 , H01L27/02 , H01L27/06 , H01L27/088 , H01L27/092 , H01L27/146 , H01L29/78 , H01L31/08 , H02H7/20 , H03F1/42 , H03F1/52 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/369 , H04N5/374 , H04N3/14
CPC分类号： H01L23/62 , H01L23/647 , H01L27/0251 , H01L27/14654 , H04N3/1512 , H04N3/1568 , H01L2924/0002
摘要： A solid state image pickup device having a plurality of solid state elements in a two-dimensional array so as to form picture cells. Each solid state element includes a photoelectric converting element and a switching field effect transistor to permit scanning of the elements by scanners. To counteract noise and blooming, a second field effect transistor acting as an amplifier is connected between the photoelectric converting element and the switching field effect transistor. A third field effect transistor is coupled to the photoelectric converting element for resetting the same.
摘要翻译：具有二维阵列中的多个固态元件以形成图形单元的固态图像拾取装置。每个固态元件包括光电转换元件和开关场效应晶体管，以允许扫描器扫描元件。为了抵消噪声和起霜，用作放大器的第二场效应晶体管连接在光电转换元件和开关场效应晶体管之间。第三场效应晶体管耦合到光电转换元件，用于复位它。

5. 发明授权

US4689687A Charge transfer type solid-state imaging device 失效
标题翻译：电荷转移型固态成像装置
公开(公告)号：US4689687A
公开(公告)日：1987-08-25
申请号：US796752
申请日：1985-11-12
申请人： Norio Koike , Masaaki Nakai , Haruhisa Ando , Toshifumi Ozaki , Shinya Ohba , Hideyuki Ono , Toshiyuki Akiyama
发明人： Norio Koike , Masaaki Nakai , Haruhisa Ando , Toshifumi Ozaki , Shinya Ohba , Hideyuki Ono , Toshiyuki Akiyama
IPC分类号： H01L27/148 , H04N5/359 , H04N5/3728 , H04N3/14
CPC分类号： H01L27/14831 , H04N5/3595 , H04N5/3728
摘要： A charge transfer type solid-state device incorporating a charge coupled device (CCD). In order to eliminate field after image and smear, at least two electrode pairs are provided in a vertical CCD shift register for transferring the signal charges stored in photoelectric conversion elements, the electrode pairs being disposed within the vertical pitch of the photoelectric conversion elements. P
摘要翻译：包含电荷耦合器件（CCD）的电荷转移型固态器件。为了消除图像和污迹后的场，在垂直CCD移位寄存器中提供至少两个电极对，用于传送存储在光电转换元件中的信号电荷，电极对设置在光电转换元件的垂直间距内。

6. 发明授权

US4578707A Method of reducing vertical smears of a solid state image sensor 失效
标题翻译：降低固态图像传感器垂直涂片的方法
公开(公告)号：US4578707A
公开(公告)日：1986-03-25
申请号：US662133
申请日：1984-10-18
申请人： Naoki Ozawa , Toshiyuki Akiyama , Shuusaku Nagahara , Shinya Ohba , Haruhisa Ando , Toshifumi Ozaki
发明人： Naoki Ozawa , Toshiyuki Akiyama , Shuusaku Nagahara , Shinya Ohba , Haruhisa Ando , Toshifumi Ozaki
IPC分类号： H04N5/217 , H04N3/12
CPC分类号： H04N5/2175
摘要： Herein disclosed is a method of reducing the vertical smears which are generated in a solid state image sensor including a plurality of vertical signal lines for transferring signal charges in a vertical direction and at least one charge transfer device for transferring the signal charges in a horizontal direction.The smear charges stored in the vertical signal lines and the signal charges generated in a photoelectric conversion element in response to an incident ray are inputted separately of each other for a horizontal blanking period to the charge transfer device for the horizontal transfer. During a tracing period, a smear voltage and a signal voltage are outputted separately of each other from said charge transfer device. The smear voltage adjusted is subtracted from the signal voltage to eliminate the smear component which has been mixed into the signal voltage.
摘要翻译：这里公开了一种减少在包括用于在垂直方向上传送信号电荷的多个垂直信号线的固态图像传感器中产生的垂直涂片的方法，以及用于在水平方向上传送信号电荷的至少一个电荷转移装置。存储在垂直信号线中的拖尾电荷和在光电转换元件中产生的响应于入射光线的信号电荷在水平消隐期间彼此分开地输入到用于水平传送的电荷转移装置。在跟踪期间，污染电压和信号电压彼此分离地从所述电荷转移装置输出。从信号电压中减去调整的污迹电压，以消除已混入信号电压的污迹分量。

7. 发明授权

US4774586A Interline type charge transfer imaging device 失效
标题翻译： Interline型电荷转移成像装置
公开(公告)号：US4774586A
公开(公告)日：1988-09-27
申请号：US768113
申请日：1985-08-21
申请人： Norio Koike , Masaaki Nakai , Kenji Itoh , Toshiyuki Akiyama , Iwao Takemoto , Shinya Oba
发明人： Norio Koike , Masaaki Nakai , Kenji Itoh , Toshiyuki Akiyama , Iwao Takemoto , Shinya Oba
IPC分类号： H01L27/148 , H04N5/335 , H04N5/341 , H04N5/351 , H04N5/365 , H04N5/3728 , H04N3/14
CPC分类号： H04N3/1537
摘要： In the interline type charge transfer imaging device, two of the three groups of wiring through which driving pulses are sent to each of three groups of electrodes constituting vertical charge transfer devices are arranged in horizontal direction and the remaining one group of wiring is arranged in vertical direction. Light-shielding layer is installed on the vertically running wires and the electrodes connected with those wires.
摘要翻译：在行间电荷转移成像装置中，在构成垂直电荷转移装置的三组电极中的每一组发送驱动脉冲的三组布线中的两个布置在水平方向上，剩下的一组布线布置成垂直方向。遮光层安装在垂直运行的电线上，电极与这些电线相连。

8. 发明授权

US4577230A Solid state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4577230A
公开(公告)日：1986-03-18
申请号：US691911
申请日：1985-01-16
申请人： Naoki Ozawa , Toshiyuki Akiyama , Shuusaku Nagahara , Iwao Takemoto
发明人： Naoki Ozawa , Toshiyuki Akiyama , Shuusaku Nagahara , Iwao Takemoto
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/347 , H04N5/359 , H04N5/363 , H04N5/3728 , H04N5/374 , H04N5/378 , H04N3/12
CPC分类号： H04N5/3595
摘要： A solid state imaging device is disclosed in which photodiodes are arranged regularly in horizontal and vertical directions and generate signal charges in response to incident light, the signal charge thus obtained and smear charges stored on vertical signal lines are alternately and separately transferred to an output end by a horizontal charge transfer device, each of the smear charges is converted at the output end into a first voltage, the resultant charge of a signal charge following the above smear charge and another kind of smear charge is converted at the output end into a second voltage, a reset operation for the smear charge and resultant charge held at the output end is performed at an interval twice as long as the repetition period of a transfer pulse applied to the horizontal charge transfer device, and at least one of the first and second voltages is attenuated or amplified so that a difference between the first and second voltages thus processed provides an image signal in which any smear component is not present and reset noise is greatly reduced.
摘要翻译：公开了一种固态成像装置，其中光电二极管在水平和垂直方向上规则地布置，并且响应于入射光而产生信号电荷，由此获得的信号电荷和拖放在垂直信号线上的电荷被交替地并分别地传送到输出端通过水平电荷转移装置，每个拖尾电荷在输出端被转换成第一电压，在上述拖尾电荷之后的信号电荷的结果电荷和另一种拖尾电荷在输出端被转换成第二电压电压时，在施加到水平电荷转移装置的转印脉冲的重复周期的两倍长的时间间隔执行用于拖尾电荷的合成电荷的复位操作和在输出端保持的合成电荷，并且第一和第二电压被衰减或放大，使得由此处理的第一和第二电压之间的差异提供图像信号其中任何涂片组件不存在并且重置噪声大大降低。

9. 发明授权

US4675887A Solid state imaging device and method with row-by-row charge transfer 失效
标题翻译：固态成像装置和逐行电荷转移方法
公开(公告)号：US4675887A
公开(公告)日：1987-06-23
申请号：US736259
申请日：1985-05-21
申请人： Toshiyuki Akiyama , Norio Koike , Kenji Ito , Takeshi Ogino , Shuusaku Nagahara
发明人： Toshiyuki Akiyama , Norio Koike , Kenji Ito , Takeshi Ogino , Shuusaku Nagahara
IPC分类号： H01L27/14 , H01L27/148 , H04N5/335 , H04N5/341 , H04N5/355 , H04N5/359 , H04N5/3728 , H04N5/374 , G11C19/28 , H01L29/78 , H01L31/00
CPC分类号： H04N3/1568
摘要： A solid stage imaging device, in which photodiodes each capable of converting incident light into a electric charge and accumulating the electric charge are arranged regularly in a matrix, e.g. in horizontal and vertical directions, and electric charges of the photodiodes are sent to the outside by means of CCD's, includes a scanning circuit which scans switching MOS transistors for transferring the electric charges of the photodiodes to vertical CCD's, in a vertical direction so that switching MOS transistors in a row parallel to a horizontal direction can be driven independently of switching MOS transistors in another row. When the solid state imaging device is driven, an operation for transferring an electric charge in each vertical CCD and an operation for driving switching MOS transistors in the next row with the aid of the scanning circuit are alternately performed, to reduce the amount of smear and to increase the dynamic range of each vertical CCD, without increasing the number of CCD's used.
摘要翻译：一种固体级成像装置，其中将能够将入射光转换成电荷并累积电荷的光电二极管规则地布置在矩阵中，例如，在水平和垂直方向上，光电二极管的电荷通过CCD发送到外部，包括扫描电路，扫描开关MOS晶体管，用于沿垂直方向扫描光电二极管的电荷到垂直CCD，以便切换与水平方向平行的MOS晶体管可以独立于另一行中的开关MOS晶体管而被驱动。当固态成像装置被驱动时，交替执行用于在每个垂直CCD中传送电荷的操作和用于驱动下一行中的开关MOS晶体管的操作，以减少涂抹量和增加每个垂直CCD的动态范围，而不增加CCD使用的数量。

10. 发明授权

US08987441B2 Substituted polycyclic carbamoyl pyridone derivative prodrug 有权
标题翻译：取代多环氨甲酰吡啶酮衍生物前药
公开(公告)号：US08987441B2
公开(公告)日：2015-03-24
申请号：US13824723
申请日：2011-09-21
申请人： Chika Takahashi , Hidenori Mikamiyama , Toshiyuki Akiyama , Kenji Tomita , Yoshiyuki Taoda , Makoto Kawai , Kosuke Anan , Masayoshi Miyagawa , Naoyuki Suzuki
发明人： Chika Takahashi , Hidenori Mikamiyama , Toshiyuki Akiyama , Kenji Tomita , Yoshiyuki Taoda , Makoto Kawai , Kosuke Anan , Masayoshi Miyagawa , Naoyuki Suzuki
IPC分类号： C07D413/00 , C07D253/08 , C07D471/00 , C07D241/04 , C07D471/04 , C07F9/6561 , C07D471/14
CPC分类号： C07D471/04 , A61K31/4738 , C07D471/14 , C07F9/6561 , C07F9/65616
摘要： The present invention provides a compound having antiviral effects, particularly having growth inhibitory activity on influenza viruses, a preferred example of the compound being a substituted 3-hydroxy-4-pyridone derivative prodrug having cap-dependent endonuclease inhibitory activity.
摘要翻译：本发明提供具有抗病毒作用的化合物，特别是具有对流感病毒的生长抑制活性的化合物，该化合物的优选实例是具有cap依赖性内切核酸酶抑制活性的取代的3-羟基-4-吡啶酮衍生物前药。

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