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11. 发明授权

US07171973B2 Substrate processing apparatus 有权
标题翻译：基板加工装置
公开(公告)号：US07171973B2
公开(公告)日：2007-02-06
申请号：US10195453
申请日：2002-07-16
申请人： Takehiko Orii , Tatsuya Nishida , Osamu Kuroda
发明人： Takehiko Orii , Tatsuya Nishida , Osamu Kuroda
IPC分类号： B08B3/02
CPC分类号： H01L21/67051 , C03C23/0075 , H01L21/67028 , H01L21/67178 , Y10S134/901 , Y10S134/902
摘要： The substrate processing apparatus has an enclosure structure enclosing a substrate support member to define a processing space. The enclosure structure has an opening closed by a shutter. A processing fluid supply unit, which supplies processing fluid, such as chemical liquid, is accommodated in a housing. The processing fluid supply unit accommodated in the housing is advanced into the processing space through the opening of the enclosure structure to feed the processing fluid onto the substrate supported by the substrate support member.
摘要翻译：衬底处理设备具有包围衬底支撑构件以限定处理空间的封闭结构。外壳结构具有由快门关闭的开口。供给处理流体（如化学液体）的处理流体供应单元容纳在壳体中。容纳在壳体中的处理流体供应单元通过外壳结构的打开而进入处理空间，以将处理流体供给到由基板支撑构件支撑的基板上。

12. 发明授权

US06979655B2 Substrate processing method and substrate processing apparatus 失效
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US06979655B2
公开(公告)日：2005-12-27
申请号：US10295041
申请日：2002-11-15
申请人： Takayuki Niuya , Takehiko Orii , Hiroyuki Mori , Hiroshi Yano , Mitsunori Nakamori
发明人： Takayuki Niuya , Takehiko Orii , Hiroyuki Mori , Hiroshi Yano , Mitsunori Nakamori
IPC分类号： H01L21/304 , G03F7/42 , H01L21/027 , H01L21/302 , H01L21/306 , H01L21/311 , H01L21/461 , H01I21/302
CPC分类号： H01L21/31133 , G03F7/422 , H01L21/02063 , H01L21/31138 , H01L21/67017 , H01L21/67028 , H01L21/76814
摘要： A resist film and a polymer layer adhered on a semiconductor substrate can be removed by the method according to the present invention. A first processing liquid, typically including a oxidizing agent, such as hydrogen peroxide solution, is fed to the substrate, thereby the condition of the resist film and the polymer layer is changed. Next, a second processing liquid, typically including a dimethyl sulfoxide and an amine solvent, is fed to the substrate, thereby the resist film and the polymer layer is dissolved and lifted off from the substrate. A sputtered copper particles included in the polymer layer can also be removed.
摘要翻译：可以通过根据本发明的方法去除粘附在半导体衬底上的抗蚀剂膜和聚合物层。通常包含氧化剂如过氧化氢溶液的第一处理液体被供给至基板，从而改变了抗蚀剂膜和聚合物层的状态。接下来，将通常包含二甲基亚砜和胺溶剂的第二处理液体供给到基板，从而将抗蚀剂膜和聚合物层溶解并从基板剥离。包含在聚合物层中的溅射铜颗粒也可以被去除。

13. 发明授权

US06578592B1 Processing apparatus with horizontally movable enclosing element 有权
标题翻译：具有水平移动封闭元件的加工设备
公开(公告)号：US06578592B1
公开(公告)日：2003-06-17
申请号：US09783957
申请日：2001-02-16
申请人： Yuji Kamikawa , Takehiko Orii , Kyouji Kohama
发明人： Yuji Kamikawa , Takehiko Orii , Kyouji Kohama
IPC分类号： B08B302
CPC分类号： H01L21/67051 , B08B3/02 , Y10S134/902
摘要： A cleaning system has a movable outer tubular member (26) and a movable inner tubular member (27). A bottom part of the inner tubular (27) is inclined. A first drain pipe (47) is connected to the inner tubular member (27). The first drain pipe (47) has an end part slidably inserted into a second drain pipe (76).
摘要翻译：清洁系统具有可移动的外部管状构件（26）和可移动内部管状构件（27）。内管（27）的底部是倾斜的。第一排水管（47）连接到内管状构件（27）。第一排水管（47）具有可滑动地插入第二排水管（76）的端部。

14. 发明授权

US09095953B2 Apparatus for polishing rear surface of substrate, system for polishing rear surface of substrate, method for polishing rear surface of substrate and recording medium having program for polishing rear surface of substrate 有权
标题翻译：用于抛光衬底后表面的设备，用于抛光衬底后表面的系统，用于抛光衬底后表面的方法和具有用于抛光衬底后表面的程序的记录介质
公开(公告)号：US09095953B2
公开(公告)日：2015-08-04
申请号：US13158600
申请日：2011-06-13
申请人： Mitsunori Nakamori , Noritaka Uchida , Takehiko Orii , Takanori Miyazaki , Nobuhiko Mouri
发明人： Mitsunori Nakamori , Noritaka Uchida , Takehiko Orii , Takanori Miyazaki , Nobuhiko Mouri
IPC分类号： B24B7/22 , B24B51/00 , B24B37/04
CPC分类号： B24B37/042
摘要： Provided are a rear substrate surface polishing device polishing a rear surface of a substrate, a rear substrate surface polishing system including the rear substrate surface polishing device, a rear substrate surface polishing method used in the rear substrate surface polishing device, and a storage medium for storing a program implemented with the rear substrate surface polishing method. In particular, the rear surface of the substrate is polished by a substrate polishing unit in accordance with information acquired from a prior process performed prior to the polishing process of the rear surface of the substrate at the substrate polishing unit. Further, the substrate polishing unit polishes the substrate with a polishing area determined on the basis of information acquired from a prior process. Furthermore, the polishing is performed by using any one or all of a plurality of substrate polishing units determined on the basis of information acquired from a prior process.
摘要翻译：提供了研磨基板的背面的背面基板表面研磨装置，具有背面基板表面研磨装置的背面基板表面研磨系统，后方基板表面研磨装置所使用的背面基板表面研磨方法以及用于存储利用后衬底表面抛光方法实现的程序。特别地，基板抛光单元根据在基板抛光单元的基板的后表面的抛光处理之前执行的先前处理获得的信息来抛光基板的后表面。此外，基板抛光单元用基于从先前处理获得的信息确定的抛光区域对基板进行抛光。此外，通过使用基于从先前方法获取的信息确定的多个基板抛光单元中的任何一个或全部来进行抛光。

15. 发明授权

US08978671B2 Substrate processing method and substrate processing apparatus 有权
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US08978671B2
公开(公告)日：2015-03-17
申请号：US13332652
申请日：2011-12-21
申请人： Satoru Tanaka , Takehiko Orii , Hirotaka Maruyama , Teruomi Minami , Mitsunori Nakamori
发明人： Satoru Tanaka , Takehiko Orii , Hirotaka Maruyama , Teruomi Minami , Mitsunori Nakamori
IPC分类号： B08B3/00 , H01L21/67
CPC分类号： H01L21/67028 , H01L21/67051
摘要： An apparatus comprising: a processing liquid supply unit; a volatile processing liquid supply unit; a substrate heating unit; and a controller to control the volatile processing liquid supply unit and the substrate heating unit, wherein the controller executes a process of supplying the processing liquid to the substrate, a process of heating the substrate on which a liquid film of the processing liquid is formed, a process of supplying a volatile processing liquid, a process of stopping the supply of the volatile processing liquid, and a process of drying the substrate by removing the volatile processing liquid, and wherein the process of heating the substrate starts before the process of supplying the volatile processing liquid, and the substrate heating unit heats the substrate so that the surface temperature of the substrate is higher than a dew point before the surface of the substrate is exposed from the volatile processing liquid.
摘要翻译：一种设备，包括：处理液供应单元; 挥发性处理液体供应单元; 基板加热单元; 以及控制器，用于控制所述挥发性处理液体供应单元和所述基板加热单元，其中所述控制器执行将处理液体供应到所述基板的处理，对其上形成有所述处理液体的液体膜的基板进行加热的处理，提供挥发性处理液的处理，停止供给挥发性处理液的处理，以及通过除去挥发性处理液来干燥基板的工序，并且，在供给工序之前开始加热基板并且所述基板加热单元加热所述基板，使得所述基板的表面温度高于在所述基板的表面从所述挥发性处理液体露出之前的露点。

16. 发明授权

US08969218B2 Etching method, etching apparatus and storage medium 有权
标题翻译：蚀刻方法，蚀刻装置和存储介质
公开(公告)号：US08969218B2
公开(公告)日：2015-03-03
申请号：US13443156
申请日：2012-04-10
申请人： Tsukasa Watanabe , Keisuke Egashira , Miyako Kaneko , Takehiko Orii
发明人： Tsukasa Watanabe , Keisuke Egashira , Miyako Kaneko , Takehiko Orii
IPC分类号： H01L21/302 , H01L21/3105 , H01L21/311 , H01L21/67 , H01L21/02
CPC分类号： H01L21/3105 , H01L21/02164 , H01L21/02359 , H01L21/31111 , H01L21/6708
摘要： Disclosed is a technique for attaining high etching selectivity of a silicon nitride film to a silicon oxide film. The etching method includes a step of supplying a silylating agent to a substrate having a silicon nitride film and a silicon oxide film exposed on the surface thereof to thereby form a silylated film as a protective film over the surface of the silicon oxide film. After this step, an etching solution is supplied to the substrate. It is thus possible to selectively etch only the silicon nitride film.
摘要翻译：公开了一种获得氮化硅膜对氧化硅膜的高蚀刻选择性的技术。蚀刻方法包括向在其表面上暴露的氮化硅膜和氧化硅膜的基板供给甲硅烷化剂的步骤，从而在氧化硅膜的表面上形成作为保护膜的甲硅烷基化膜。在该步骤之后，向衬底提供蚀刻溶液。因此，可以仅选择性地仅蚀刻氮化硅膜。

17. 发明授权

US08771429B2 Supercritical drying method for semiconductor substrate and supercritical drying apparatus 有权
标题翻译：半导体衬底超临界干燥方法及超临界干燥装置
公开(公告)号：US08771429B2
公开(公告)日：2014-07-08
申请号：US13420870
申请日：2012-03-15
申请人： Linan Ji , Hidekazu Hayashi , Hiroshi Tomita , Hisashi Okuchi , Yohei Sato , Takayuki Toshima , Mitsuaki Iwashita , Kazuyuki Mitsuoka , Gen You , Hiroki Ohno , Takehiko Orii
发明人： Linan Ji , Hidekazu Hayashi , Hiroshi Tomita , Hisashi Okuchi , Yohei Sato , Takayuki Toshima , Mitsuaki Iwashita , Kazuyuki Mitsuoka , Gen You , Hiroki Ohno , Takehiko Orii
IPC分类号： B08B7/00
CPC分类号： H01L21/02 , F26B21/10 , F26B21/14 , F26B23/028 , F26B2200/04 , H01L21/02052 , H01L21/02057 , H01L21/02101 , H01L21/67034
摘要： According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.
摘要翻译：根据一个实施方案，一种用于半导体衬底的超临界干燥方法包括将半导体衬底以一种状态将半导体衬底引入室中，该半导体衬底的表面被醇润湿，用半导体衬底上的醇代替超临界流体碳通过将半导体衬底浸渍到腔室中的超临界流体中，并且将超临界流体和醇从腔室排出并且减小腔室内的压力，从而将二氧化碳稀释。该方法还包括在减小室内的压力之后，通过向室内供应氧气或臭氧气体进行烘烤处理。

18. 发明授权

US08003509B2 Semiconductor manufacturing apparatus and semiconductor manufacturing method 有权
标题翻译：半导体制造装置及半导体制造方法
公开(公告)号：US08003509B2
公开(公告)日：2011-08-23
申请号：US12405644
申请日：2009-03-17
申请人： Kenichi Hara , Mitsuaki Iwashita , Takashi Tanaka , Takayuki Toshima , Takehiko Orii
发明人： Kenichi Hara , Mitsuaki Iwashita , Takashi Tanaka , Takayuki Toshima , Takehiko Orii
IPC分类号： H01L21/44
CPC分类号： H01L21/288 , C23C18/1628 , H01L21/76849
摘要： A plated film having a uniform film thickness is formed on a surface of a substrate. A semiconductor manufacturing apparatus includes: a holding mechanism for holding a substrate rotatably; a nozzle for supplying a processing solution for performing a plating process on a processing target surface of the substrate; a substrate rotating mechanism for rotating the substrate held by the holding mechanism in a direction along the processing target surface; a nozzle driving mechanism for moving the nozzle in a direction along the processing target surface at a position facing the processing target surface of the substrate held by the holding mechanism; and a control unit for controlling the supply of the processing solution by the nozzle and the movement of the nozzle by the nozzle driving mechanism.
摘要翻译：在基板的表面上形成具有均匀膜厚的镀膜。半导体制造装置包括：可旋转地保持基板的保持机构; 用于向所述基板的处理目标表面供给用于进行电镀处理的处理液的喷嘴; 基板旋转机构，用于沿着所述处理对象表面的方向旋转由所述保持机构保持的所述基板; 喷嘴驱动机构，用于沿着与所述保持机构保持的所述基板的处理对象面对置的位置沿着所述处理对象面的方向移动所述喷嘴; 以及控制单元，用于控制由喷嘴供应处理溶液和通过喷嘴驱动机构移动喷嘴。

19. 发明授权

US07543593B2 Substrate processing apparatus 有权
标题翻译：基板加工装置
公开(公告)号：US07543593B2
公开(公告)日：2009-06-09
申请号：US11356364
申请日：2006-02-17
申请人： Takehiko Orii , Tatsuya Nishida , Osamu Kuroda
发明人： Takehiko Orii , Tatsuya Nishida , Osamu Kuroda
IPC分类号： C25F1/00 , C25F3/30 , C25F5/00
CPC分类号： H01L21/6708 , B08B3/02
摘要： A substrate processing apparatus is provided. The apparatus includes a plurality of fluid suppliers 61, 61, 63 for supplying different processing fluids. In processing a wafer W, the substrate processing apparatus moves the fluid suppliers 61, 62, 63 along the peripheral part of the wafer W relatively. The fluid suppliers 61, 62, 63 are arranged in a direction extending from the circumference of the wafer W to its inside. With the arrangement, the apparatus is capable of stable processing of the wafer W in spite of rotating the wafer W at a low speed. Further, it is possible to improve a throughput of the apparatus in resist processing.
摘要翻译：提供了一种基板处理装置。该装置包括用于供应不同加工流体的多个流体供应器61,61,63。在处理晶片W时，基板处理装置沿着晶片W的周边部分相对移动流体供给部61,62,63。流体供应部61,62,63沿着从晶片W的圆周向内延伸的方向配置。通过这种布置，尽管晶片W以低速旋转，该装置能够稳定地处理晶片W. 此外，可以提高抗蚀剂处理中的装置的生产量。

20. 发明授权

US07404407B2 Substrate processing apparatus 有权
标题翻译：基板加工装置
公开(公告)号：US07404407B2
公开(公告)日：2008-07-29
申请号：US11616075
申请日：2006-12-26
申请人： Takehiko Orii , Osamu Kuroda
发明人： Takehiko Orii , Osamu Kuroda
IPC分类号： B08B3/02
CPC分类号： H01L21/67051 , C03C23/0075 , H01L21/67028 , H01L21/67178 , Y10S134/901 , Y10S134/902
摘要： The substrate processing apparatus has an enclosure structure enclosing a substrate support member to define a processing space. The enclosure structure has an opening closed by a shutter. A processing fluid supply unit, which supplies processing fluid, such as chemical liquid, is accommodated in a housing. The processing fluid supply unit accommodated in the housing is advanced into the processing space through the opening of the enclosure structure to feed the processing fluid onto the substrate supported by the substrate support member.
摘要翻译：衬底处理设备具有包围衬底支撑构件以限定处理空间的封闭结构。外壳结构具有由快门关闭的开口。供给处理流体（如化学液体）的处理流体供应单元容纳在壳体中。容纳在壳体中的处理流体供应单元通过外壳结构的打开而进入处理空间，以将处理流体供给到由基板支撑构件支撑的基板上。

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