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    • 1. 发明授权
    • Cleaning apparatus, cleaning method and recording medium
    • 清洁装置,清洁方法和记录介质
    • US08308870B2
    • 2012-11-13
    • US12610599
    • 2009-11-02
    • Teruomi MinamiTakashi YabutaSatoru TanakaHirotaka MaruyamaKouichi Eguchi
    • Teruomi MinamiTakashi YabutaSatoru TanakaHirotaka MaruyamaKouichi Eguchi
    • B08B3/08
    • H01L21/67051
    • Disclosed are a cleaning apparatus and a cleaning method, which can collect a chemical liquid without reducing the throughput after a substrate is subjected to a cleaning treatment and dried by using a drying solvent, such as IPA. The disclosed cleaning apparatus carries out a chemical liquid cleaning treatment, a rinsing treatment, and a drying treatment with IPA, in order, on a wafer W while rotating wafer W, and includes a cleaning liquid supply device for supplying a cleaning liquid for cleaning the drain cup and the drain tube to the drain cup in a state where the cleaning liquid is not supplied to the wafer. Also, the apparatus further includes a control unit for controlling respective components of the cleaning apparatus. The control unit, after the cleaning treatment and then the rinsing treatment of wafer W, at the time when the drying treatment is performed by IPA, controls the cleaning liquid to be supplied to the drain cup.
    • 公开了一种清洁装置和清洁方法,其可以在基板经受清洁处理之后收集化学液体而不降低生产量,并通过使用诸如IPA的干燥溶剂进行干燥。 所公开的清洁装置在旋转晶片W的同时在晶片W上进行化学液体清洗处理,漂洗处理和IPA干燥处理,并且包括用于提供用于清洁的清洁液的清洗液供给装置 排水杯和排水管排入排水杯,在清洗液未供给到晶片的状态下。 此外,该装置还包括用于控制清洁装置的各个部件的控制单元。 在通过IPA进行干燥处理之后,控制单元在进行清洁处理,然后进行晶片W的漂洗处理之后,控制向排水杯供给的清洗液。
    • 2. 发明申请
    • CLEANING APPARATUS, CLEANING METHOD AND RECORDING MEDIUM
    • 清洁装置,清洁方法和记录介质
    • US20100108103A1
    • 2010-05-06
    • US12610599
    • 2009-11-02
    • Teruomi MINAMITakashi YABUTASatoru TANAKAHirotaka MaruyamaKouichi Eguchi
    • Teruomi MINAMITakashi YABUTASatoru TANAKAHirotaka MaruyamaKouichi Eguchi
    • B08B3/00
    • H01L21/67051
    • Disclosed are a cleaning apparatus and a cleaning method, which can collect a chemical liquid without reducing the throughput after a substrate is subjected to a cleaning treatment and dried by using a drying solvent, such as IPA. The disclosed cleaning apparatus carries out a chemical liquid cleaning treatment, a rinsing treatment, and a drying treatment with IPA, in order, on a wafer W while rotating wafer W, and includes a cleaning liquid supply device for supplying a cleaning liquid for cleaning the drain cup and the drain tube to the drain cup in a state where the cleaning liquid is not supplied to the wafer. Also, the apparatus further includes a control unit for controlling respective components of the cleaning apparatus. The control unit, after the cleaning treatment and then the rinsing treatment of wafer W, at the time when the drying treatment is performed by IPA, controls the cleaning liquid to be supplied to the drain cup.
    • 公开了一种清洁装置和清洁方法,其可以在基板经受清洁处理之后收集化学液体而不降低生产量,并通过使用诸如IPA的干燥溶剂进行干燥。 所公开的清洁装置在旋转晶片W的同时在晶片W上进行化学液体清洗处理,漂洗处理和IPA干燥处理,并且包括用于提供用于清洁的清洁液的清洗液供给装置 排水杯和排水管排入排水杯,在清洗液未供给到晶片的状态下。 此外,该装置还包括用于控制清洁装置的各个部件的控制单元。 在通过IPA进行干燥处理之后,控制单元在进行清洁处理,然后进行晶片W的漂洗处理之后,控制向排水杯供给的清洗液。
    • 4. 发明授权
    • Substrate processing method and substrate processing apparatus
    • 基板处理方法和基板处理装置
    • US08978671B2
    • 2015-03-17
    • US13332652
    • 2011-12-21
    • Satoru TanakaTakehiko OriiHirotaka MaruyamaTeruomi MinamiMitsunori Nakamori
    • Satoru TanakaTakehiko OriiHirotaka MaruyamaTeruomi MinamiMitsunori Nakamori
    • B08B3/00H01L21/67
    • H01L21/67028H01L21/67051
    • An apparatus comprising: a processing liquid supply unit; a volatile processing liquid supply unit; a substrate heating unit; and a controller to control the volatile processing liquid supply unit and the substrate heating unit, wherein the controller executes a process of supplying the processing liquid to the substrate, a process of heating the substrate on which a liquid film of the processing liquid is formed, a process of supplying a volatile processing liquid, a process of stopping the supply of the volatile processing liquid, and a process of drying the substrate by removing the volatile processing liquid, and wherein the process of heating the substrate starts before the process of supplying the volatile processing liquid, and the substrate heating unit heats the substrate so that the surface temperature of the substrate is higher than a dew point before the surface of the substrate is exposed from the volatile processing liquid.
    • 一种设备,包括:处理液供应单元; 挥发性处理液体供应单元; 基板加热单元; 以及控制器,用于控制所述挥发性处理液体供应单元和所述基板加热单元,其中所述控制器执行将处理液体供应到所述基板的处理,对其上形成有所述处理液体的液体膜的基板进行加热的处理, 提供挥发性处理液的处理,停止供给挥发性处理液的处理,以及通过除去挥发性处理液来干燥基板的工序,并且,在供给工序之前开始加热基板 并且所述基板加热单元加热所述基板,使得所述基板的表面温度高于在所述基板的表面从所述挥发性处理液体露出之前的露点。