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1. 发明授权

US10155340B2 Mold, method for producing mold, and method for producing nanoimprint film 有权
公开(公告)号：US10155340B2
公开(公告)日：2018-12-18
申请号：US14004190
申请日：2012-03-01
申请人： Kenichiro Nakamatsu , Hidekazu Hayashi , Kiyoshi Minoura , Akinobu Isurugi
发明人： Kenichiro Nakamatsu , Hidekazu Hayashi , Kiyoshi Minoura , Akinobu Isurugi
IPC分类号： B29C33/38 , B82Y40/00 , B29C59/02 , B29C33/42 , B29C59/04 , B82Y30/00
摘要： A mold is disclosed, which is capable of producing a nanoimprint film without a problem of clogging of irregularities of the mold with a resin material. A method for producing the mold and a method for producing a nanoimprint film using the mold are further disclosed. In an embodiment, the mold includes: a first surface having a nanostructure including plural recesses spaced at an interval of less than 1 μm between bottom points of adjacent recesses; and at least two second surfaces substantially not having the nanostructure, wherein the first surface is coplanar with the at least two second surfaces and is positioned between two second surfaces.

2. 发明授权

US09556532B2 Die, process for producing die, and process for producing antireflection film 有权
标题翻译：模具，制造模具的工艺和制造抗反射膜的工艺
公开(公告)号：US09556532B2
公开(公告)日：2017-01-31
申请号：US13582033
申请日：2011-03-22
申请人： Kiyoshi Minoura , Akinobu Isurugi , Ichirou Ihara , Hidekazu Hayashi , Kenichiro Nakamatsu
发明人： Kiyoshi Minoura , Akinobu Isurugi , Ichirou Ihara , Hidekazu Hayashi , Kenichiro Nakamatsu
IPC分类号： C25D11/12 , C25D11/24 , G02B1/118 , C25D11/04 , B29C59/04 , B29C35/08
CPC分类号： G02B1/118 , B29C59/046 , B29C2035/0827 , C25D11/04 , C25D11/045 , C25D11/12 , C25D11/24
摘要： A method is provided for manufacturing a mold that has a porous alumina layer over its surface, which is capable of preventing formation of pits (recesses). A moth-eye mold manufacturing method of an embodiment of the present invention is a method for manufacturing a mold which has a porous alumina layer over its surface, including the steps of: providing a mold base which includes an aluminum base and an aluminum film deposited on a surface of the aluminum base, the aluminum film having a purity of not less than 99.99 mass %; anodizing a surface of the aluminum film to form a porous alumina layer which has a plurality of minute recessed portions; and bringing the porous alumina layer into contact with an etching solution to enlarge the plurality of minute recessed portions of the porous alumina layer.
摘要翻译：提供了一种用于制造在其表面上具有多孔氧化铝层的模具的方法，其能够防止形成凹坑（凹部）。本发明的实施例的蛾眼模具的制造方法是在其表面上具有多孔氧化铝层的模具的制造方法，包括以下步骤：提供包括铝基底和铝膜沉积的模具基底在铝基材的表面上，铝膜的纯度不低于99.99质量％; 阳极氧化铝膜的表面以形成具有多个微小凹陷部分的多孔氧化铝层; 并且使多孔氧化铝层与蚀刻溶液接触，以使多孔氧化铝层的多个微小凹陷部分扩大。

3. 发明授权

US09133558B2 Method for producing anodized film 有权
标题翻译：生产阳极氧化膜的方法
公开(公告)号：US09133558B2
公开(公告)日：2015-09-15
申请号：US13877182
申请日：2011-10-06
申请人： Hidekazu Hayashi
发明人： Hidekazu Hayashi
IPC分类号： C25D1/08 , C25D11/04 , C23C14/00 , C23C14/18 , C23C14/58 , C25D11/12 , C25D11/24 , C25D11/10
CPC分类号： C25D1/08 , C23C14/0005 , C23C14/185 , C23C14/5853 , C25D11/04 , C25D11/10 , C25D11/12 , C25D11/24
摘要： A method for manufacturing an anodized film according to an embodiment of the present invention includes the steps of: (a) providing a multilayer structure that includes a base, a sacrificial layer which is provided on the base and which contains aluminum, and an aluminum layer which is provided on a surface of the sacrificial layer; (b) partially anodizing the aluminum layer to form a porous alumina layer which has a plurality of minute recessed portions; and (c) after step (b), separating the porous alumina layer from the multilayer structure. According to an embodiment of the present invention, a self-supporting anodized film which includes a porous alumina layer can be manufactured more conveniently as compared with the conventional methods.
摘要翻译：根据本发明的实施方案的阳极氧化膜的制造方法包括以下步骤：（a）提供一种多层结构，其包括基材，设置在基材上并含有铝的牺牲层和铝层其设置在所述牺牲层的表面上; （b）部分阳极氧化铝层以形成具有多个微小凹陷部分的多孔氧化铝层; 和（c）在步骤（b）之后，从多层结构分离多孔氧化铝层。根据本发明的实施方案，与常规方法相比，可以更方便地制造包括多孔氧化铝层的自支撑阳极氧化膜。

4. 发明授权

US08950082B2 Supercritical drying method for semiconductor substrate 有权
标题翻译：半导体衬底的超临界干燥方法
公开(公告)号：US08950082B2
公开(公告)日：2015-02-10
申请号：US13600860
申请日：2012-08-31
申请人： Yohei Sato , Hisashi Okuchi , Hiroshi Tomita , Hidekazu Hayashi , Linan Ji
发明人： Yohei Sato , Hisashi Okuchi , Hiroshi Tomita , Hidekazu Hayashi , Linan Ji
IPC分类号： F26B5/00 , F26B7/00 , H01L21/02 , H01L21/67 , F26B5/04 , F26B3/00
CPC分类号： H01L21/02101 , F26B3/00 , F26B3/02 , F26B5/005 , F26B5/04 , F26B7/00 , H01L21/02057 , H01L21/67034
摘要： According to one embodiment, a supercritical drying method for a semiconductor substrate comprises introducing a semiconductor substrate, a surface of the semiconductor substrate being wet with a water-soluble organic solvent, to the inside of a chamber, hermetically sealing the chamber and increasing a temperature inside the chamber to not lower than a critical temperature of the water-soluble organic solvent, thereby bringing the water-soluble organic solvent into a supercritical state, decreasing a pressure inside the chamber and changing the water-soluble organic solvent in the supercritical state to a gas, thereby discharging the water-soluble organic solvent from the chamber, starting a supply of an inert gas into the chamber as the pressure inside the chamber decreases to atmospheric pressure, and cooling the semiconductor substrate in a state where the inert gas exists inside the chamber.
摘要翻译：根据一个实施例，用于半导体衬底的超临界干燥方法包括将半导体衬底（半导体衬底的被水溶性有机溶剂润湿的表面）引入室内，密封腔并增加温度在室内，不低于水溶性有机溶剂的临界温度，从而使水溶性有机溶剂进入超临界状态，降低室内的压力并将超临界状态的水溶性有机溶剂改变为气体，从而从室中排出水溶性有机溶剂，随着室内的压力降低到大气压，开始向室内供应惰性气体，并且在惰性气体存在于内部的状态下冷却半导体衬底房间。

5. 发明授权

US08709170B2 Supercritical drying method for semiconductor substrate 有权
标题翻译：半导体衬底的超临界干燥方法
公开(公告)号：US08709170B2
公开(公告)日：2014-04-29
申请号：US13052232
申请日：2011-03-21
申请人： Yohei Sato , Hisashi Okuchi , Hiroshi Tomita , Hidekazu Hayashi , Yukiko Kitajima
发明人： Yohei Sato , Hisashi Okuchi , Hiroshi Tomita , Hidekazu Hayashi , Yukiko Kitajima
IPC分类号： B08B7/00 , B08B7/04 , B08B3/00
CPC分类号： H01L21/67034
摘要： In one embodiment, after rinsing a semiconductor substrate having a fine pattern formed thereon with pure water, the pure water staying on the semiconductor substrate is substituted with a water soluble organic solvent, and then, the semiconductor substrate is introduced into a chamber in a state wet with the water soluble organic solvent. Then, the water soluble organic solvent is turned into a supercritical state by increasing a temperature inside of the chamber. Thereafter, the inside of the chamber is reduced in pressure while keeping the inside of the chamber at a temperature enough not to liquefy the pure water (i.e., rinsing pure water mixed into the water soluble organic solvent), and further, the water soluble organic solvent in the supercritical state is changed into a gaseous state, to be discharged from the chamber, so that the semiconductor substrate is dried.
摘要翻译：在一个实施方案中，在用纯水冲洗其上形成有精细图案的半导体衬底之后，将残留在半导体衬底上的纯水用水溶性有机溶剂代替，然后将半导体衬底引入到室中用水溶性有机溶剂润湿。然后，水溶性有机溶剂通过增加室内的温度而变成超临界状态。此后，室内压力降低，同时保持室内不足液化纯水的温度（即冲洗混入水溶性有机溶剂中的纯水），此外，水溶性有机溶剂处于超临界状态的溶剂变成气态，从室排出，使得半导体基板干燥。

6. 发明申请

US20140090983A1 ELECTRODE STRUCTURE, SUBSTRATE HOLDER, AND METHOD FOR FORMING ANODIC OXIDATION LAYER 有权
标题翻译：电极结构，基板保持器和形成阳极氧化层的方法
公开(公告)号：US20140090983A1
公开(公告)日：2014-04-03
申请号：US13990208
申请日：2011-11-25
申请人： Hidekazu Hayashi , Kiyoshi Minoura , Akinobu Isurugi
发明人： Hidekazu Hayashi , Kiyoshi Minoura , Akinobu Isurugi
IPC分类号： C25D17/10 , C25D11/24 , C25D11/04
CPC分类号： C25D17/005 , C25D11/005 , C25D11/04 , C25D11/24 , C25D17/10
摘要： An electrode structure of the present invention includes: an aluminum electrode which is to be in contact with a surface of an aluminum base; a fixing member for fixing the aluminum electrode on the surface of the aluminum base; an elastic member provided between the fixing member and the aluminum base; a lead wire which is electrically connected to the aluminum electrode at least under a certain condition; and a cover member which is tightly closed with the lead wire penetrating through an opening.
摘要翻译：本发明的电极结构包括：铝电极，其与铝基体的表面接触; 用于将铝电极固定在铝基体的表面上的固定构件; 设置在所述固定构件和所述铝基座之间的弹性构件; 至少在一定条件下与铝电极电连接的引线; 以及用引线穿过开口紧密封闭的盖构件。

7. 发明授权

US08580135B2 Die and method of manufacturing same 有权
标题翻译：模具及其制造方法相同
公开(公告)号：US08580135B2
公开(公告)日：2013-11-12
申请号：US13263459
申请日：2010-04-06
申请人： Hidekazu Hayashi , Kiyoshi Minoura , Akinobu Isurugi
发明人： Hidekazu Hayashi , Kiyoshi Minoura , Akinobu Isurugi
IPC分类号： C25F3/00
CPC分类号： G02B1/118 , B29C33/38 , B29C33/3814 , B29C33/424 , B29C33/56 , C25D11/12 , C25D11/24
摘要： A mold of the present invention includes: a base 12 made of glass or plastic; an inorganic underlayer 14 provided on a surface of the base 12; a buffer layer 16 provided on the inorganic underlayer 14, the buffer layer 16 containing aluminum; an aluminum layer 18a provided on a surface of the buffer layer 16; and a porous alumina layer 20 provided on a surface of the aluminum layer 18a. The porous alumina layer 20 has a plurality of recessed portions 22 whose two-dimensional size viewed in a direction normal to the surface is not less than 10 nm and less than 500 nm. The mold of the present invention has excellent adhesion between the aluminum layer and the base.
摘要翻译：本发明的模具包括：由玻璃或塑料制成的基座12; 设置在基体12的表面上的无机底层14; 设置在无机底层14上的缓冲层16，含有铝的缓冲层16; 设置在缓冲层16的表面上的铝层18a; 以及设置在铝层18a的表面上的多孔氧化铝层20。多孔氧化铝层20具有多个凹部22，其在与该表面垂直的方向上观察的二维尺寸不小于10nm且小于500nm。本发明的模具在铝层和基体之间具有优异的粘附性。

8. 发明申请

US20130063725A1 DIE INSPECTION METHOD 有权
标题翻译： DIE检查方法
公开(公告)号：US20130063725A1
公开(公告)日：2013-03-14
申请号：US13698395
申请日：2011-05-17
申请人： Hidekazu Hayashi , Takao Imaoku
发明人： Hidekazu Hayashi , Takao Imaoku
IPC分类号： G01J3/46
CPC分类号： G01J3/46 , G01B11/06 , G01B11/0616 , G01B11/0625 , G01B11/0633 , G01B21/08 , G01J3/465 , G01N21/29 , G01N21/8803 , G01N21/956 , G01N2201/0634
摘要： A method is disclosed for inspecting a mold which has a porous alumina layer over its surface. The method includes providing, based on a relationship between a first parameter indicative of a thickness of the porous alumina layer and a color parameter indicative of a color of reflected light from the porous alumina layer, first color information which represents a tolerance of the first parameter of a porous alumina layer which has an uneven structure that is within a tolerance; providing a mold which is an inspection subject, the mold having a porous alumina layer over its surface; obtaining a color parameter which is indicative of a color of reflected light from the porous alumina layer of the inspection subject mold; and determining a suitability of the first parameter of the inspection subject mold based on the obtained color parameter and the first color information.
摘要翻译：公开了一种用于检查其表面上具有多孔氧化铝层的模具的方法。该方法包括基于指示多孔氧化铝层的厚度的第一参数和表示来自多孔氧化铝层的反射光的颜色的颜色参数之间的关系来提供表示第一参数的公差的第一颜色信息的多孔氧化铝层，其具有在公差内的不均匀结构; 提供作为检查对象的模具，所述模具在其表面上具有多孔氧化铝层; 获得表示来自检查对象模具的多孔氧化铝层的反射光的颜色的颜色参数; 以及基于获得的颜色参数和第一颜色信息确定检查对象模具的第一参数的适合性。

9. 发明申请

US20130055584A1 SUPERCRlTICAL DRYING METHOD FOR SEMICONDUCTOR SUBSTRATE 有权
标题翻译：用于半导体基板的超临界干燥方法
公开(公告)号：US20130055584A1
公开(公告)日：2013-03-07
申请号：US13600860
申请日：2012-08-31
申请人： Yohei Sato , Hisashi Okuchi , Hiroshi Tomita , Hidekazu Hayashi , Linan Ji
发明人： Yohei Sato , Hisashi Okuchi , Hiroshi Tomita , Hidekazu Hayashi , Linan Ji
IPC分类号： F26B5/04
CPC分类号： H01L21/02101 , F26B3/00 , F26B3/02 , F26B5/005 , F26B5/04 , F26B7/00 , H01L21/02057 , H01L21/67034
摘要： According to one embodiment, a supercritical drying method for a semiconductor substrate comprises introducing a semiconductor substrate, a surface of the semiconductor substrate being wet with a water-soluble organic solvent, to the inside of a chamber, hermetically sealing the chamber and increasing a temperature inside the chamber to not lower than a critical temperature of the water-soluble organic solvent, thereby bringing the water-soluble organic solvent into a supercritical state, decreasing a pressure inside the chamber and changing the water-soluble organic solvent in the supercritical state to a gas, thereby discharging the water-soluble organic solvent from the chamber, starting a supply of an inert gas into the chamber as the pressure inside the chamber decreases to atmospheric pressure, and cooling the semiconductor substrate in a state where the inert gas exists inside the chamber.
摘要翻译：根据一个实施例，用于半导体衬底的超临界干燥方法包括将半导体衬底（半导体衬底的被水溶性有机溶剂润湿的表面）引入室内，密封腔并增加温度在室内，不低于水溶性有机溶剂的临界温度，从而使水溶性有机溶剂进入超临界状态，降低室内的压力并将超临界状态的水溶性有机溶剂改变为气体，从而从室中排出水溶性有机溶剂，随着室内的压力降低到大气压，开始向室内供应惰性气体，并且在惰性气体存在于内部的状态下冷却半导体衬底房间。

10. 发明授权

US08384862B2 Production method of nanoimprint film, display device, and liquid crystal display device 有权
标题翻译：纳米压印薄膜，显示装置和液晶显示装置的生产方法
公开(公告)号：US08384862B2
公开(公告)日：2013-02-26
申请号：US12735298
申请日：2008-11-07
申请人： Takao Imaoku , Tokio Taguchi , Hidekazu Hayashi , Kazuhiko Tsuda
发明人： Takao Imaoku , Tokio Taguchi , Hidekazu Hayashi , Kazuhiko Tsuda
IPC分类号： G02F1/1333
CPC分类号： G02B1/118 , B29C59/046 , B29C2035/0827 , B29C2059/023 , B29C2791/001 , B29K2105/243 , G02B5/208
摘要： A method is disclosed for efficiently producing a nanoimprint film with high-accurately formed nanostructures even if a base on which the nanoimprint film is formed is capable of absorbing UV light. The production method of at least one embodiment of the present invention is a production method of a nanoimprint film formed on a base, the nanoimprint film having a surface with nanosized protrusions and recesses formed thereon. In at least one embodiment, the production method includes a first step of applying a UV-curable resin on a base containing a UV-absorbing component to form a film; a second step of irradiating the film with UV light from a top-side surface of the film to form a semi-cured film; a third step of imprinting nanosized protrusions and recesses on the semi-cured film to form a film having a surface with protrusions and recesses formed thereon; and a fourth step of curing the film with protrusions and recesses to form a nanoimprint film.
摘要翻译：公开了一种用于有效地制造具有高精度形成的纳米结构的纳米压印膜的方法，即使形成有纳米压印膜的基底能够吸收紫外光。本发明的至少一个实施方式的制造方法是在基材上形成的纳米压印膜的制造方法，其中，纳米压印膜具有在其上形成有纳米尺寸的突起和凹部的表面。在至少一个实施方案中，制备方法包括在包含UV吸收组分的基底上施加UV可固化树脂以形成膜的第一步骤; 第二步骤，用来自薄膜顶面的UV光照射薄膜，形成半固化薄膜; 在半固化膜上印刷纳米尺寸的突起和凹部的第三步骤，以形成具有形成在其上的突起和凹部的表面的膜; 以及用突起和凹部固化膜以形成纳米压印膜的第四步骤。

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