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11. 发明申请

US20080050263A1 Enhanced sputter target manufacturing method 审中-公开
公开(公告)号：US20080050263A1
公开(公告)日：2008-02-28
申请号：US11882502
申请日：2007-08-02
申请人： Abdelouahab Ziani , Bernd Kunkel
发明人： Abdelouahab Ziani , Bernd Kunkel
IPC分类号： B22F3/00 , B22F1/00 , B22F9/04
CPC分类号： C23C14/3414 , C22C19/07
摘要： A method of manufacturing a sputter target the method including the step of preparing a plurality of raw materials into a composition corresponding to alloy system, the plurality of raw materials comprising pure elements or master alloys. The method also includes the step of heating the plurality of raw materials under vacuum or under a partial pressure of argon (Ar) to a fully liquid state to form a molten alloy corresponding to the alloy system, solidifying the molten alloy to form an ingot, and reheating the ingot to a fully liquid state to form a diffuse molten alloy. The method further includes the steps of rapidly solidifying the diffuse molten alloy into a homogeneous pre-alloyed powder material, admixing pure elemental powders to the homogeneous pre-alloyed powder material, consolidating the homogeneous pre-alloyed powder material into a fully dense homogeneous material, hot rolling the fully dense homogeneous material. Moreover, the method includes the steps of cold rolling the fully dense homogeneous material, and machining the fully dense homogenous material to form a sputter target.

12. 发明申请

US20050274221A1 Enhanced sputter target alloy compositions 审中-公开
标题翻译：增强的溅射靶合金组成
公开(公告)号：US20050274221A1
公开(公告)日：2005-12-15
申请号：US11183968
申请日：2005-07-19
申请人： Abdelouahab Ziani , Yuanda Cheng , Bernd Kunkel , Michael Bartholomeusz
发明人： Abdelouahab Ziani , Yuanda Cheng , Bernd Kunkel , Michael Bartholomeusz
IPC分类号： C23C14/00 , C23C14/14 , C23C14/34 , G11B5/64 , G11B5/65 , G11B5/851
CPC分类号： C23C14/3414 , C23C14/14 , G11B5/656 , G11B5/851
摘要： A sputter target, where the sputter target is comprised of cobalt (Co), greater than 0 and as much as 24 atomic percent chromium (Cr), greater than 0 and as much as 20 atomic percent platinum (Pt), greater than 0 and as much as 20 atomic percent boron (B), and greater than 0 and as much as 10 atomic percent gold (Au). The sputter target is further comprised of X1, where X1 is selected from the group consisting of tungsten (W), yttrium (Y), manganese (Mn), and molybdenum (Mo). The sputter target is further comprised of 0 to 7 atomic percent X2, wherein X2 is an element selected from the group consisting of titanium (Ti), vanadium (V), zirconium (Zr), niobium (Nb), ruthenium (Ru), rhodium (Rh), palladium (Pd), hafnium (Hf), tantalum (Ta), and iridium (Ir).
摘要翻译：溅射靶，其中溅射靶由钴（Co）组成，大于0且高达24原子％的铬（Cr），大于0且高达20原子％的铂（Pt）大于0，以及多达20原子百分比的硼（B），大于0和高达10原子％的金（Au）。溅射靶还包括X 1，其中X 1选自钨（W），钇（Y），锰（Mn）和钼（Mo）。溅射靶还包含0至7原子％的X 2 O 2，其中X 2是选自钛（Ti），钒（V），锆（Zr），铌（Nb），钌（Ru），铑（Rh），钯（Pd），铪（Hf），钽（Ta）和铱（Ir）。

13. 发明授权

US06797137B2 Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidfied alloy powders and elemental Pt metal 有权
标题翻译：使用快速固化的合金粉末和元素Pt金属制造机械合金化的贵金属磁性溅射靶
公开(公告)号：US06797137B2
公开(公告)日：2004-09-28
申请号：US09832181
申请日：2001-04-11
申请人： Michael Sandlin , Bernd Kunkel , Willy Zhang , Phillip Corno
发明人： Michael Sandlin , Bernd Kunkel , Willy Zhang , Phillip Corno
IPC分类号： C23C1434
CPC分类号： C23C14/14 , C23C14/3414 , H01F41/183
摘要： A cobalt-chromium-boron-platinum sputtering target alloy having multiple phases. The alloy can include Cr, B, Ta, Nb, C, Mo, Ti, V, W, Zr, Zn, Cu, Hf, O, Si or N. The alloy is prepared by mixing Pt powder with a cobalt-chromium-boron master alloy, ball milling the powders and HIP'ing to densify the powder into the alloy.
摘要翻译：具有多相的钴 - 铬 - 硼 - 铂溅射靶合金。该合金可以包括Cr，B，Ta，Nb，C，Mo，Ti，V，W，Zr，Zn，Cu，Hf，O，Si或N.该合金是通过将Pt粉末与钴 - 硼母合金，球磨粉末和HIP'ing将粉末致密化成合金。

14. 发明申请

US20080202916A1 Controlling magnetic leakage flux in sputtering targets containing magnetic and non-magnetic elements 审中-公开
标题翻译：控制含有磁性和非磁性元素的溅射靶中的漏磁通
公开(公告)号：US20080202916A1
公开(公告)日：2008-08-28
申请号：US11709134
申请日：2007-02-22
申请人： Kyung H. Chung , Daniel R. Marx , Bernd Kunkel
发明人： Kyung H. Chung , Daniel R. Marx , Bernd Kunkel
IPC分类号： C23C14/00
CPC分类号： C23C14/3414
摘要： Various exemplary embodiments of the present invention relate to a method for controlling magnetic leakage flux in a sputtering target containing magnetic and non-magnetic elements. The method relates to selecting a particle size of at least one non-magnetic phase in a microstructure, where the particle size of the non-magnetic phase is greater than or equal to one micron. The non-magnetic phase is combined with at least one magnetic phase in the microstructure, where the magnetic phase is greater than or equal to 10 atomic percent and is greater than one micron in size. The selected particle size of the non-magnetic phase decreases the diffusion between the magnetic and non-magnetic phases in the microstructure, and may increase the pass through flux (PTF) of the sputtering target. The magnetic phase and non-magnetic phases may be combined in the microstructure by hot isostatic pressing, sintering, spark plasma sintering, or vacuum hot pressing.
摘要翻译：本发明的各种示例性实施例涉及一种用于控制包含磁性和非磁性元件的溅射靶中的漏磁通的方法。该方法涉及在微结构中选择至少一个非磁性相的粒度，其中非磁性相的粒度大于或等于1微米。非磁性相与微观结构中的至少一个磁性相组合，其中磁相大于或等于10原子百分比并且尺寸大于1微米。所选择的非磁性粒子尺寸减小了微观结构中的磁性和非磁性相之间的扩散，并且可以增加溅射靶的通过通量（PTF）。可以通过热等静压，烧结，放电等离子烧结或真空热压将磁相和非磁性相组合在微结构中。

15. 发明授权

US07175802B2 Refurbishing spent sputtering targets 失效
标题翻译：翻新废溅射靶
公开(公告)号：US07175802B2
公开(公告)日：2007-02-13
申请号：US10243948
申请日：2002-09-16
申请人： Michael Sandlin , Wenjun Zhang , Bernd Kunkel
发明人： Michael Sandlin , Wenjun Zhang , Bernd Kunkel
IPC分类号： C23C14/34 , B22F7/00
CPC分类号： B22F7/062 , B22F2007/068 , B22F2998/10 , C23C14/3414 , B22F3/1208 , B22F3/15
摘要： Spent sputtering targets are refurbished by filling the depleted region of the target with new sputter material using a hot isostatic pressing or HIP'ing technique.
摘要翻译：通过使用热等静压或HIP'ing技术，用新的溅射材料填充靶的耗尽区域来重新喷涂溅射靶。

16. 发明申请

US20070017803A1 Enhanced sputter target manufacturing method 审中-公开
公开(公告)号：US20070017803A1
公开(公告)日：2007-01-25
申请号：US11284911
申请日：2005-11-23
申请人： Abdelouahab Ziani , Bernd Kunkel
发明人： Abdelouahab Ziani , Bernd Kunkel
IPC分类号： C23C14/00
CPC分类号： C23C14/3414 , C22C19/07
摘要： A method of manufacturing a sputter target the method including the step of preparing a plurality of raw materials into a composition corresponding to alloy system, the plurality of raw materials comprising pure elements or master alloys. The method also includes the step of heating the plurality of raw materials under vacuum or under a partial pressure of argon (Ar) to a fully liquid state to form a molten alloy corresponding to the alloy system, solidifying the molten alloy to form an ingot, and reheating the ingot to a fully liquid state to form a diffuse molten alloy. The method further includes the steps of rapidly solidifying the diffuse molten alloy into a homogeneous pre-alloyed powder material, admixing pure elemental powders to the homogeneous pre-alloyed powder material, consolidating the homogeneous pre-alloyed powder material into a fully dense homogeneous material, hot rolling the fully dense homogeneous material. Moreover, the method includes the steps of cold rolling the fully dense homogeneous material, and machining the fully dense homogenous material to form a sputter target.

17. 发明申请

US20050277002A1 Enhanced sputter target alloy compositions 审中-公开
标题翻译：增强的溅射靶合金组成
公开(公告)号：US20050277002A1
公开(公告)日：2005-12-15
申请号：US10866795
申请日：2004-06-15
申请人： Abdelouahab Ziani , Yuanda Cheng , Bernd Kunkel , Michael Bartholomeusz
发明人： Abdelouahab Ziani , Yuanda Cheng , Bernd Kunkel , Michael Bartholomeusz
IPC分类号： C22C19/07 , C23C14/20 , C23C14/34 , G11B5/64 , G11B5/66 , G11B5/85 , G11B5/851 , C23C14/32 , G11B5/706
CPC分类号： G11B5/851 , C22C19/07 , C23C14/3414 , G11B5/656
摘要： A sputter target, where the sputter target is comprised of Co, greater than 0 and as much as 24 atomic percent Cr, greater than 0 and as much as 20 atomic percent Pt, greater than 0 and as much as 20 atomic percent B, and greater than 0 and as much as 10 atomic percent X1, where X1 is an element selected from the group consisting of Ag, Ce, Cu, Dy, Er, Eu, Gd, Ho, In, La, Lu, Mo, Nd, Pr, Sm, Tl, W, and Yb. The sputter target is further comprised of X2, wherein X2 is selected from the group consisting of W, Y, Mn, and Mo. Moreover, the sputter target is further comprised of 0 to 7 atomic percent X3, wherein X3 is an element selected from the group consisting of Ti, V, Zr, Nb, Ru, Rh, Pd, Hf, Ta, and Ir. The thin film sputtered by the sputter target has a coercivity value between 1000 Oersted and 4000 Oersted.
摘要翻译：溅射靶，其中溅射靶由Co组成，大于0且高达24原子％的Cr，大于0且高达20原子％的Pt，大于0和高达20原子百分比的B，以及大于0且高达10原子％X 1，其中X 1是选自Ag，Ce，Cu，Dy，Er，Eu的元素，Gd，Ho，In，La，Lu，Mo，Nd，Pr，Sm，Tl，W和Yb。溅射靶还包括X 2，其中X 2选自W，Y，Mn和Mo。此外，溅射靶更进一步其中X 3为选自Ti，V，Zr，Nb，Ru，Rh，Pd等的元素，其含量为0〜7原子％X 3， Hf，Ta和Ir。由溅射靶溅射的薄膜的矫顽力值在1000奥斯特和4000奥斯特德之间。

18. 发明授权

US4819486A Optoelectronic accelerometer 失效
标题翻译：光电加速度计
公开(公告)号：US4819486A
公开(公告)日：1989-04-11
申请号：US21088
申请日：1987-03-03
申请人： Bernd Kunkel , Karl Keller , Reinhold Lutz
发明人： Bernd Kunkel , Karl Keller , Reinhold Lutz
IPC分类号： G01P15/093 , G01P15/13 , G01P15/18 , G01V7/00 , G01V7/02 , G01V7/16 , G01P15/08
CPC分类号： G01P15/093
摘要： A device for acceleration measurements and, in particular, for gravitational field measurements in, for example, earth orbits, which has a body arranged movably in a force field, the position of which can be detected by a position location device. The force acting upon the body is anisotropic and, at least in the direction of the acceleration to be determined, is not a linear function of the deflection of the body from its resting position. In a preferred further development the body is suspended by four tension springs, which in the resting position of the body are arranged in a plane perpendicular to the direction of the acceleration to be determined, and which each form right angles with the adjacent spring. With 3 separate optoelectronic position detector receivers plus corresponding illuminators which provides some measurement redundancy, all acceleration planes can be measured with a great dynamic range. In the main direction, forces as small as 10.sup.-12 g will be measurable. With the position detectors, the device is much simpler and more compact than interferometric devices at equal precision. Other embodiments are described.
摘要翻译：一种用于加速度测量的装置，特别是用于在例如地球轨道中的重力场测量的装置，其具有在力场中可移动地设置的主体，其位置可以由位置定位装置检测。作用在身体上的力是各向异性的，并且至少在要确定的加速度的方向上，不是身体偏离其静止位置的线性函数。在优选的进一步的发展中，身体被四个拉力弹簧悬挂，该弹簧在身体的静止位置被布置在垂直于要确定的加速度的方向的平面中，并且每个与相邻的弹簧形成直角。使用3个独立的光电位置检测器接收机和相应的照明器提供一些测量冗余，所有加速平面可以在很大的动态范围内测量。在主要方向上，可以测量小至10-12克的力。使用位置检测器，器件比相同精度的干涉仪器要简单得多，更紧凑。描述其他实施例。

19. 发明申请

US20080014109A1 Enhanced sputter target manufacturing method 审中-公开
标题翻译：增强的溅射靶制造方法
公开(公告)号：US20080014109A1
公开(公告)日：2008-01-17
申请号：US11882500
申请日：2007-08-02
申请人： Abdelouahab Ziani , Bernd Kunkel
发明人： Abdelouahab Ziani , Bernd Kunkel
IPC分类号： B22F3/24 , B22F1/00 , B22F9/06
CPC分类号： C23C14/3414 , C22C19/07
摘要： A method of manufacturing a sputter target the method including the step of preparing a plurality of raw materials into a composition corresponding to alloy system, the plurality of raw materials comprising pure elements or master alloys. The method also includes the step of heating the plurality of raw materials under vacuum or under a partial pressure of argon (Ar) to a fully liquid state to form a molten alloy corresponding to the alloy system, solidifying the molten alloy to form an ingot, and reheating the ingot to a fully liquid state to form a diffuse molten alloy. The method further includes the steps of rapidly solidifying the diffuse molten alloy into a homogeneous pre-alloyed powder material, admixing pure elemental powders to the homogeneous pre-alloyed powder material, consolidating the homogeneous pre-alloyed powder material into a fully dense homogeneous material, hot rolling the fully dense homogeneous material. Moreover, the method includes the steps of cold rolling the fully dense homogeneous material, and machining the fully dense homogenous material to form a sputter target.
摘要翻译：一种制造溅射靶的方法，包括将多种原料制备成与合金系统相对应的组合物的步骤，所述多种原料包括纯元素或母合金。该方法还包括在真空或氩（Ar）的分压下将多种原料加热至完全液态的步骤，以形成对应于该合金系统的熔融合金，使熔融合金固化形成锭，并将锭再加热到完全液态以形成扩散熔融合金。该方法还包括以下步骤：将扩散熔融合金快速凝固成均匀的预合金粉末材料，将纯元素粉末混合到均匀的预合金粉末材料上，将均匀的预合金粉末材料固结成完全致密的均质材料，热轧完全致密的均质材料。此外，该方法包括冷轧完全致密的均质材料，以及加工完全致密的均质材料以形成溅射靶的步骤。

20. 发明授权

US07229588B2 Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidified alloy powders and elemental Pt metal 有权
标题翻译：使用快速固化的合金粉末和元素Pt金属制造的机械合金化的贵金属磁性溅射靶
公开(公告)号：US07229588B2
公开(公告)日：2007-06-12
申请号：US10755229
申请日：2004-01-13
申请人： Michael Sandlin , Bernd Kunkel , Willy Zhang , Phillip Corno
发明人： Michael Sandlin , Bernd Kunkel , Willy Zhang , Phillip Corno
IPC分类号： B22F3/12 , C23C14/34
CPC分类号： C23C14/14 , C23C14/3414 , H01F41/183
摘要： A cobalt-chromium-boron-platinum sputtering target alloy having multiple phases. The alloy can include Cr, B, Ta, Nb, C, Mo, Ti, V, W, Zr, Zn, Cu, Hf, O, Si or N. The alloy is prepared by mixing Pt powder with a cobalt-chromium-boron master alloy, ball milling the powders and HIP'ing to densify the powder into the alloy.
摘要翻译：具有多相的钴 - 铬 - 硼 - 铂溅射靶合金。该合金可以包括Cr，B，Ta，Nb，C，Mo，Ti，V，W，Zr，Zn，Cu，Hf，O，Si或N.该合金是通过将Pt粉末与钴 - 硼母合金，球磨粉末和HIP'ing以将粉末致密化成合金。

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