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    • 93. 发明申请
    • METHODS AND APPARATUS FOR DEPOSITING A UNIFORM SILICON FILM WITH FLOW GRADIENT DESIGNS
    • 用流平面设计沉积均匀硅膜的方法和装置
    • US20120103264A1
    • 2012-05-03
    • US13349332
    • 2012-01-12
    • SOO YOUNG CHOITae Kyung WonJohn M. White
    • SOO YOUNG CHOITae Kyung WonJohn M. White
    • C23C16/455
    • C23C16/24C23C16/45565C23C16/5096H01J37/32449
    • Methods and apparatus having a flow gradient created from a gas distribution plate are provided. In one embodiment, the method and apparatus are particularly useful for, but not limited to, depositing a silicon film for solar cell applications. The apparatus for depositing a uniform film for solar cell applications includes a processing chamber, and a quadrilateral gas distribution plate disposed in the processing chamber and having at least four corners separated by four sides. The gas distribution plate further includes a first plurality of chokes formed through the gas distribution plate, the first plurality of chokes located in the corners, and a second plurality of chokes formed through the gas distribution plate, the second plurality of chokes located along the sides of the gas distribution plate between the corner regions, wherein the first plurality of chokes have a greater flow resistance than that of the second plurality of chokes.
    • 提供了具有由气体分配板产生的流动梯度的方法和装置。 在一个实施例中,该方法和装置特别适用于但不限于沉积太阳能电池应用的硅膜。 用于沉积用于太阳能电池应用的均匀膜的设备包括处理室和设置在处理室中的四边形气体分配板,并且具有由四个侧面分开的至少四个角。 气体分配板还包括通过气体分配板形成的第一多个扼流圈,位于角部的第一多个扼流圈,以及通过气体分配板形成的第二多个扼流圈,沿着侧面设置的第二多个扼流圈 在所述角区域之间的所述气体分配板中,所述第一多个扼流器具有比所述第二多个扼流圈更大的流动阻力。
    • 100. 发明授权
    • Asymmetrical RF drive for electrode of plasma chamber
    • 等离子体室用电极的非对称RF驱动
    • US08343592B2
    • 2013-01-01
    • US12343519
    • 2008-12-24
    • Jozef KudelaCarl A. SorensenSoo Young ChoiJohn M. White
    • Jozef KudelaCarl A. SorensenSoo Young ChoiJohn M. White
    • H05H1/24H01L21/306C23C16/00
    • H01L21/02B44C1/227C23C16/513H01J37/32091H01J37/32577H01L21/02104
    • RF power is coupled to one or more RF drive points (50-56) on an electrode (20-28) of a plasma chamber such that the level of RF power coupled to the RF drive points (51-52, 55-56) on the half (61) of the electrode that is closer to the workpiece passageway (12) exceeds the level of RF power coupled to the RF drive points (53-54), if any, on the other half (62) of the electrode. Alternatively, RF power is coupled to one or more RF drive points on an electrode of a plasma chamber such that the weighted mean of the drive point positions is between the center (60) of the electrode and the workpiece passageway. The weighted mean is based on weighting each drive point position by the time-averaged level of RF power coupled to that drive point position. The invention offsets an increase in plasma density that otherwise would exist adjacent the end of the electrode closest to the passageway.
    • RF功率耦合到等离子体室的电极(20-28)上的一个或多个RF驱动点(50-56),使得耦合到RF驱动点(51-52,55-56)的RF功率的电平 更靠近工件通道(12)的电极的一半(61)超过了电极的另一半(62)上耦合到RF驱动点(53-54)的RF功率的水平(如果有的话) 。 或者,RF功率耦合到等离子体室的电极上的一个或多个RF驱动点,使得驱动点位置的加权平均值在电极的中心(60)和工件通道之间。 加权平均值基于通过耦合到该驱动点位置的RF功率的时间平均水平来加权每个驱动点位置。 本发明抵消等离子体密度的增加,否则其将邻近电极最靠近通道的端部存在。