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1. 发明授权

US08083853B2 Plasma uniformity control by gas diffuser hole design 有权
标题翻译：通过气体扩散器孔设计的等离子体均匀性控制
公开(公告)号：US08083853B2
公开(公告)日：2011-12-27
申请号：US10889683
申请日：2004-07-12
申请人： Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
发明人： Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
IPC分类号： C23C16/00 , C23C16/455 , H01L21/3065
CPC分类号： H01J37/3244 , C23C16/345 , C23C16/455 , C23C16/45565 , C23C16/5096 , H01J37/32082 , H01J37/32091 , H01J37/32541 , H01J37/32596 , H01J2237/327 , H01J2237/3321 , H01J2237/3323 , H01J2237/3325 , Y10T29/49885 , Y10T29/49996
摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.
摘要翻译：提供了用于在处理室中分配气体的气体扩散板的实施例。气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性。从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。扩散板的弯曲可以通过热处理或真空工艺来实现。从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

2. 发明申请

US20080302303A1 METHODS AND APPARATUS FOR DEPOSITING A UNIFORM SILICON FILM WITH FLOW GRADIENT DESIGNS 审中-公开
标题翻译：用流平面设计沉积均匀硅膜的方法和装置
公开(公告)号：US20080302303A1
公开(公告)日：2008-12-11
申请号：US11759599
申请日：2007-06-07
申请人： Soo Young Choi , Tae Kyung Won , John M. White
发明人： Soo Young Choi , Tae Kyung Won , John M. White
IPC分类号： C23C16/00 , B05B1/14
CPC分类号： C23C16/24 , C23C16/45565 , C23C16/5096 , H01J37/32449
摘要： Methods and apparatus having a flow gradient created from a gas distribution plate are provided. In one embodiment, the method and apparatus are particularly useful for, but not limited to, depositing a silicon film for solar cell applications. The apparatus for depositing a uniform film for solar cell applications includes a processing chamber, and a quadrilateral gas distribution plate disposed in the processing chamber and having at least four corners separated by four sides. The gas distribution plate further includes a first plurality of chokes formed through the gas distribution plate, the first plurality of chokes located in the corners, and a second plurality of chokes formed through the gas distribution plate, the second plurality of chokes located along the sides of the gas distribution plate between the corner regions, wherein the first plurality of chokes have a greater flow resistance than that of the second plurality of chokes.
摘要翻译：提供了具有由气体分配板产生的流动梯度的方法和装置。在一个实施例中，该方法和装置特别适用于但不限于沉积太阳能电池应用的硅膜。用于沉积用于太阳能电池应用的均匀膜的设备包括处理室和设置在处理室中的四边形气体分配板，并且具有由四个侧面分开的至少四个角。气体分配板还包括通过气体分配板形成的第一多个扼流圈，位于角部的第一多个扼流圈，以及通过气体分配板形成的第二多个扼流圈，沿着侧面设置的第二多个扼流圈在所述角区域之间的所述气体分配板中，所述第一多个扼流器具有比所述第二多个扼流圈更大的流动阻力。

3. 发明申请

US20120103264A1 METHODS AND APPARATUS FOR DEPOSITING A UNIFORM SILICON FILM WITH FLOW GRADIENT DESIGNS 审中-公开
标题翻译：用流平面设计沉积均匀硅膜的方法和装置
公开(公告)号：US20120103264A1
公开(公告)日：2012-05-03
申请号：US13349332
申请日：2012-01-12
申请人： SOO YOUNG CHOI , Tae Kyung Won , John M. White
发明人： SOO YOUNG CHOI , Tae Kyung Won , John M. White
IPC分类号： C23C16/455
CPC分类号： C23C16/24 , C23C16/45565 , C23C16/5096 , H01J37/32449
摘要： Methods and apparatus having a flow gradient created from a gas distribution plate are provided. In one embodiment, the method and apparatus are particularly useful for, but not limited to, depositing a silicon film for solar cell applications. The apparatus for depositing a uniform film for solar cell applications includes a processing chamber, and a quadrilateral gas distribution plate disposed in the processing chamber and having at least four corners separated by four sides. The gas distribution plate further includes a first plurality of chokes formed through the gas distribution plate, the first plurality of chokes located in the corners, and a second plurality of chokes formed through the gas distribution plate, the second plurality of chokes located along the sides of the gas distribution plate between the corner regions, wherein the first plurality of chokes have a greater flow resistance than that of the second plurality of chokes.
摘要翻译：提供了具有由气体分配板产生的流动梯度的方法和装置。在一个实施例中，该方法和装置特别适用于但不限于沉积太阳能电池应用的硅膜。用于沉积用于太阳能电池应用的均匀膜的设备包括处理室和设置在处理室中的四边形气体分配板，并且具有由四个侧面分开的至少四个角。气体分配板还包括通过气体分配板形成的第一多个扼流圈，位于角部的第一多个扼流圈，以及通过气体分配板形成的第二多个扼流圈，沿着侧面设置的第二多个扼流圈在所述角区域之间的所述气体分配板中，所述第一多个扼流器具有比所述第二多个扼流圈更大的流动阻力。

4. 发明申请

US20110095402A1 Gate dielectric film with controlled structural and physical properties over a large surface area substrate 审中-公开
标题翻译：具有在大表面积衬底上具有受控结构和物理性质的栅介质膜
公开(公告)号：US20110095402A1
公开(公告)日：2011-04-28
申请号：US12930230
申请日：2010-12-30
申请人： Beom Soo Park , Soo Young Choi , Tae Kyung Won , John M. White
发明人： Beom Soo Park , Soo Young Choi , Tae Kyung Won , John M. White
IPC分类号： H01L29/51
CPC分类号： E06C7/48 , E06C7/482 , E06C7/484
摘要： An α-SiNx:H gate dielectric film deposited over a substrate surface having a surface area larger than 100 cm×100 cm, wherein said α-SiNx:H gate dielectric film exhibits a film thickness which varies by less than about 20% over said surface area, a film density which varies by less than about 17% over said surface area, and wherein said film exhibits a Si—H bonded structure content of less than about 15 atomic % over said surface area.
摘要翻译：一种沉积在表面积大于100cm×100cm的衬底表面上的α-SiNx：H栅极电介质膜，其中所述α-SiNx：H栅极电介质膜的膜厚比所述表面积，比所述表面积变化小于约17％的膜密度，并且其中所述膜在所述表面积上表现出小于约15原子％的Si-H键合结构含量。

5. 发明授权

US06355108B1 Film deposition using a finger type shadow frame 有权
标题翻译：使用手指型阴影框的胶片沉积
公开(公告)号：US06355108B1
公开(公告)日：2002-03-12
申请号：US09338245
申请日：1999-06-22
申请人： Tae Kyung Won , Quanyuan Shang , Robert M. Robertson , Soo Young Choi , Kam S. Law , Robert I. Greene , John M. White
发明人： Tae Kyung Won , Quanyuan Shang , Robert M. Robertson , Soo Young Choi , Kam S. Law , Robert I. Greene , John M. White
IPC分类号： C23C1600
CPC分类号： C23C16/24 , C23C16/345 , C23C16/4583 , C23C16/4585 , H01J37/32623
摘要： The present invention relates generally to a clamping and alignment assembly for a substrate processing system. The clamping and aligning assembly generally includes a shadow frame, a floating plasma shield and a plurality of insulating alignment pins. The shadow frame comprises a plurality of tabs extending inwardly therefrom and is shaped to accommodate a substrate. The tabs comprise protruding contact surfaces for stabilizing a substrate on a support member during processing. The insulating alignment pins are disposed at a perimeter of a movable support member and cooperate with an alignment recess formed in the shadow frame to urge the shadow frame into a desired position. Preferably, the floating plasma shield is disposed on the insulating alignment pins in spaced relationship between the support member and the shadow frame to shield the perimeter of the support member during processing.
摘要翻译：本发明一般涉及用于衬底处理系统的夹紧和对准组件。夹持和对准组件通常包括阴影框架，浮动等离子体屏蔽件和多个绝缘对准销钉。阴影框架包括从其向内延伸的多个突片，并且成形为容纳衬底。突片包括用于在加工期间稳定支撑构件上的基板的突出接触表面。绝缘对准销布置在可移动支撑构件的周边处，并与形成在阴影框架中的对准凹槽配合，以将阴影框架推动到期望的位置。优选地，浮动等离子体屏蔽以间隔开的关系设置在绝缘对准销上，在支撑构件和阴影框架之间，以在加工期间屏蔽支撑构件的周边。

6. 发明授权

US08883269B2 Thin film deposition using microwave plasma 有权
标题翻译：使用微波等离子体的薄膜沉积
公开(公告)号：US08883269B2
公开(公告)日：2014-11-11
申请号：US13331021
申请日：2011-12-20
申请人： Tae Kyung Won , Helinda Nominanda , Seon-Mee Cho , Soo Young Choi , Beom Soo Park , John M. White , Suhail Anwar , Jozef Kudela
发明人： Tae Kyung Won , Helinda Nominanda , Seon-Mee Cho , Soo Young Choi , Beom Soo Park , John M. White , Suhail Anwar , Jozef Kudela
IPC分类号： H05H1/30 , C23C16/34 , C23C16/455 , C23C16/511 , C23C16/54 , H01J37/32
CPC分类号： C23C16/345 , C23C16/45578 , C23C16/511 , C23C16/545 , H01J37/32192 , H01J37/3222 , H01J37/3244
摘要： A method of processing a substrate in a processing chamber is provided. The method generally includes applying a microwave power to an antenna coupled to a microwave source disposed within the processing chamber, wherein the microwave source is disposed relatively above a gas feeding source configured to provide a gas distribution coverage covering substantially an entire surface of the substrate, and exposing the substrate to a microwave plasma generated from a processing gas provided by the gas feeding source to deposit a silicon-containing layer on the substrate at a temperature lower than about 200 degrees Celsius, the microwave plasma using a microwave power having a power density of about 500 milliWatts/cm2 to about 5,000 milliWatts/cm2 at a frequency of about 1 GHz to about 10 GHz.
摘要翻译：提供了一种在处理室中处理衬底的方法。该方法通常包括对耦合到设置在处理室内的微波源的天线施加微波功率，其中微波源设置在气体馈送源的相对上方，该气体馈送源被配置成提供覆盖基板整个表面的气体分布覆盖，以及将所述衬底暴露于由所述气体供给源提供的处理气体产生的微波等离子体，以在低于约200摄氏度的温度下在所述衬底上沉积含硅层，所述微波等离子体使用具有功率密度在约1GHz至约10GHz的频率下为约500毫瓦/厘米2至约5,000毫瓦/厘米2。

7. 发明申请

US20090000551A1 METHODS AND APPARATUS FOR DEPOSITING A UNIFORM SILICON FILM WITH FLOW GRADIENT DESIGNS 审中-公开
标题翻译：用流平面设计沉积均匀硅膜的方法和装置
公开(公告)号：US20090000551A1
公开(公告)日：2009-01-01
申请号：US12204717
申请日：2008-09-04
申请人： Soo Young Choi , Tae Kyung Won , John M. White
发明人： Soo Young Choi , Tae Kyung Won , John M. White
IPC分类号： C23C16/54
CPC分类号： C23C16/24 , C23C16/45565 , C23C16/5096 , H01J37/32449
摘要： Methods and apparatus having a flow gradient created from a gas distribution plate are provided. In one embodiment, the method and apparatus are particularly useful for, but not limited to, depositing a silicon film for solar cell applications. The apparatus for depositing a uniform film for solar cell applications includes a processing chamber, and a quadrilateral gas distribution plate disposed in the processing chamber and having at least four corners separated by four sides. The gas distribution plate further includes a first plurality of chokes formed through the gas distribution plate, the first plurality of chokes located in the corners, and a second plurality of chokes formed through the gas distribution plate, the second plurality of chokes located along the sides of the gas distribution plate between the corner regions, wherein the first plurality of chokes have a greater flow resistance than that of the second plurality of chokes.
摘要翻译：提供了具有由气体分配板产生的流动梯度的方法和装置。在一个实施例中，该方法和装置特别适用于但不限于沉积太阳能电池应用的硅膜。用于沉积用于太阳能电池应用的均匀膜的设备包括处理室和设置在处理室中的四边形气体分配板，并且具有由四个侧面分开的至少四个角。气体分配板还包括通过气体分配板形成的第一多个扼流圈，位于角部的第一多个扼流圈，以及通过气体分配板形成的第二多个扼流圈，沿着侧面设置的第二多个扼流圈在所述角区域之间的所述气体分配板中，所述第一多个扼流器具有比所述第二多个扼流圈更大的流动阻力。

8. 发明申请

US20080268175A1 Method of controlling film uniformity of a cvd-deposited silicon nitride film during deposition over a large substrate surface 有权
标题翻译：控制沉积在大的基片表面上的沉积氮化硅膜的膜均匀性的方法
公开(公告)号：US20080268175A1
公开(公告)日：2008-10-30
申请号：US12082554
申请日：2008-04-11
申请人： Beom Soo Park , Soo Young Choi , Tae Kyung Won , John M. White
发明人： Beom Soo Park , Soo Young Choi , Tae Kyung Won , John M. White
IPC分类号： C23C16/448
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/5096 , H01L21/02208 , H01L21/02274 , H01L21/3185 , H01L29/4908 , H01L29/66765
摘要： We have discovered that adding H2 to a precursor gas composition including SiH4, NH3, and N2 is effective at improving the wet etch rate and the wet etch rate uniformity across the substrate surface of a-SiNx:H films which are deposited on a substrate by PECVD. Wet etch rate is an indication of film density. Typically, the lower the wet etch rate, the denser the film. The addition of H2 to the SiH4/NH3/N2 precursor gas composition did not significantly increase the variation in deposited film thickness across the surface of the substrate. The uniformity of the film across the substrate enables the production of flat panel displays having surface areas of 25,000 cm2 and larger.
摘要翻译：我们已经发现，向包含SiH 4 N，NH 3和N 2的前体气体组合物中加入H 2 N 2，在通过PECVD沉积在衬底上的a-SiN x H：H膜的衬底表面上改善湿蚀刻速率和湿蚀刻速率均匀性是有效的。湿蚀刻速率是膜密度的指示。通常，湿蚀刻速率越低，膜越致密。向SiH 4 N 3 / NH 3 / N 2 N前体气体组合物中加入H 2 O没有显着增加衬底表面沉积膜厚度的变化。跨过衬底的膜的均匀性使得能够生产具有25,000cm 2以上的表面积的平板显示器。

9. 发明授权

US08906813B2 SiOx process chemistry development using microwave plasma CVD 有权
标题翻译：使用微波等离子体CVD的SiOx工艺化学开发
公开(公告)号：US08906813B2
公开(公告)日：2014-12-09
申请号：US13886175
申请日：2013-05-02
申请人： Tae Kyung Won , Seon-Mee Cho , Soo Young Choi , Beom Soo Park , Dong-Kil Yim , John M. White , Jozef Kudela
发明人： Tae Kyung Won , Seon-Mee Cho , Soo Young Choi , Beom Soo Park , Dong-Kil Yim , John M. White , Jozef Kudela
IPC分类号： H01L21/31 , H01L21/02 , C23C16/40 , C23C16/455 , C23C16/511 , C23C16/54
CPC分类号： H01L21/0262 , C23C16/401 , C23C16/45578 , C23C16/511 , C23C16/545 , H01L21/02164 , H01L21/02211 , H01L21/02274
摘要： Methods for processing a substrate are described herein. Methods can include positioning a substrate in a processing chamber, maintaining the processing chamber at a temperature below 400° C., flowing a reactant gas comprising either a silicon hydride or a silicon halide and an oxidizing precursor into the process chamber, applying a microwave power to create a microwave plasma from the reactant gas, and depositing a silicon oxide layer on at least a portion of the exposed surface of a substrate.
摘要翻译：本文描述了用于处理衬底的方法。方法可以包括将基底定位在处理室中，将处理室保持在低于400℃的温度，使包含硅氢化物或硅卤化物的反应气体和氧化前体流入处理室，施加微波功率以从反应气体中产生微波等离子体，以及在衬底的暴露表面的至少一部分上沉积氧化硅层。

10. 发明授权

US08142606B2 Apparatus for depositing a uniform silicon film and methods for manufacturing the same 有权
标题翻译：用于沉积均匀硅膜的设备及其制造方法
公开(公告)号：US08142606B2
公开(公告)日：2012-03-27
申请号：US11759542
申请日：2007-06-07
申请人： Soo Young Choi , Tae Kyung Won , Beom Soo Park , John M. White
发明人： Soo Young Choi , Tae Kyung Won , Beom Soo Park , John M. White
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： C23C16/45565 , H01L31/182 , H01L31/1824 , Y02E10/545 , Y02E10/546 , Y02P70/521
摘要： Methods and apparatus having a gradient spacing created between a substrate support assembly and a gas distribution plate for depositing a silicon film for solar cell applications are provided. In one embodiment, an apparatus for depositing films for solar cell applications may include a processing chamber, a substrate support disposed in the processing chamber and configured to support a quadrilateral substrate thereon, and a gas distribution plate disposed in the processing chamber above the substrate support, wherein a bottom surface of the gas distribution plate has a perimeter that includes edges and corners, and wherein the corners of the gas distribution plate are closer to the substrate support than the edges of the gas distribution plate.
摘要翻译：提供了在衬底支撑组件和用于沉积太阳能电池应用的硅膜的气体分配板之间产生梯度间隔的方法和装置。在一个实施例中，一种用于沉积太阳能电池薄膜的设备可以包括处理室，设置在处理室中的基板支撑件，并且被配置为在其上支撑四边形基板，以及布置在处理室中的基板支撑件上方的气体分配板其中，所述气体分配板的底面具有包括边缘和角部的周边，并且其中所述气体分配板的角部比所述气体分配板的边缘更靠近所述基板支撑。

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