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    • 6. 发明授权
    • Indexed inline substrate processing tool
    • 索引式在线基板处理工具
    • US09406538B2
    • 2016-08-02
    • US14034921
    • 2013-09-24
    • APPLIED MATERIALS, INC.
    • David K. Carlson
    • C23C16/458C23C16/48C23C16/54H01L21/673H01L21/677H01L21/67
    • H01L21/6776C23C16/4587C23C16/481C23C16/54H01L21/67115H01L21/67173H01L21/67712
    • In some embodiments, an indexed inline substrate processing tool may include a substrate carrier having a base and pair of opposing substrate supports having respective substrate support surfaces that extend upwardly and outwardly from the base; and a plurality of modules coupled to one another in a linear arrangement, wherein each module of the plurality of modules comprises an enclosure having a first end, a second end, and a lower surface to support the substrate carrier and to provide a path for the substrate carrier to move linearly through the plurality of modules, and wherein at least one module of the plurality of modules comprises: a window disposed in a side of the enclosure; a heating lamp coupled to the side of the enclosure; a gas inlet disposed proximate a top of the enclosure; and an exhaust disposed opposite the gas inlet.
    • 在一些实施例中,索引的在线衬底处理工具可以包括具有基部和一对相对的衬底支撑件的衬底载体,其具有从基部向上和向外延伸的相应的衬底支撑表面; 以及多个模块,其以线性布置彼此耦合,其中所述多个模块中的每个模块包括具有第一端,第二端和下表面的外壳,以支撑所述衬底载体并且为 衬底载体线性移动通过所述多个模块,并且其中所述多个模块中的至少一个模块包括:设置在所述外壳侧面的窗口; 耦合到外壳侧面的加热灯; 设置在所述外壳的顶部附近的气体入口; 和与气体入口相对设置的废气。
    • 8. 发明申请
    • HIGH THROUGHPUT HEATED ION IMPLANTATION SYSTEM AND METHOD
    • 高强度加热离子植入系统和方法
    • US20150380285A1
    • 2015-12-31
    • US14317778
    • 2014-06-27
    • Axcelis Technologies, Inc.
    • Armin HuseinovicJoseph FerraraBrian Terry
    • H01L21/67H01L21/677H01L21/265
    • H01L21/67201H01J37/185H01J37/20H01J37/3171H01L21/265H01L21/67103H01L21/67109H01L21/67115H01L21/67161H01L21/67213H01L21/67712
    • An ion implantation system has an ion implantation apparatus coupled to first and second dual load lock assemblies, each having a respective first and second chamber separated by a common wall. Each first chamber has a pre-heat apparatus configured to heat a workpiece to a first temperature. Each second chamber has a post-cool apparatus configured to cool the workpiece to a second temperature. A thermal chuck retains the workpiece in a process chamber for ion implantation, and the thermal chuck is configured to heat the workpiece to a third temperature. A pump and vent are in selective fluid communication with the first and second chambers. A controller is configured to heat the workpiece to the first temperature in an atmospheric environment via the pre-heat apparatus, to heat the workpiece to the second temperature via the thermal chuck, to implant ions into the workpiece via the ion implantation apparatus, and to transfer the workpiece between atmospheric and vacuum environments via a control of the pre-heat apparatus, post-cool apparatus, pump, vent, and thermal chuck.
    • 离子注入系统具有耦合到第一和第二双负载锁定组件的离子注入装置,每个具有由公共壁分隔的相应的第一和第二室。 每个第一室具有构造成将工件加热到第一温度的预热装置。 每个第二腔室具有后冷却装置,其被配置为将工件冷却至第二温度。 热卡盘将工件保持在用于离子注入的处理室中,并且热卡盘构造成将工件加热到第三温度。 泵和排气口与第一和第二室选择性地流体连通。 控制器被配置为经由预热装置在大气环境中将工件加热到第一温度,以经由热卡盘将工件加热到第二温度,以通过离子注入装置将离子注入工件,并且 通过预热装置,后冷却装置,泵,通风口和热卡盘的控制在大气和真空环境之间传送工件。