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1. 发明授权

US07732010B2 Method for supporting a glass substrate to improve uniform deposition thickness 有权
标题翻译：支撑玻璃基板以改善均匀沉积厚度的方法
公开(公告)号：US07732010B2
公开(公告)日：2010-06-08
申请号：US11406136
申请日：2006-04-18
申请人： Soo Young Choi , Beom Soo Park , Quanyuan Shang , Robert I. Greene , John M. White , Dong-Kil Yim , Chung-Hee Park , Kam Law
发明人： Soo Young Choi , Beom Soo Park , Quanyuan Shang , Robert I. Greene , John M. White , Dong-Kil Yim , Chung-Hee Park , Kam Law
IPC分类号： C23C16/00
CPC分类号： H01J37/32082 , C23C16/4581 , C25D11/04 , C25D11/16 , C25D11/18
摘要： A method for supporting a glass substrate comprising providing a substrate support having an aluminum body, a substrate contact area formed on the surface of the substrate support, wherein the process of forming the substrate contact area comprises forming an anodization layer on a surface region of the aluminum body, the coating having a thickness of between about 0.3 mils and about 2.16 mils, wherein the surface region substantially corresponds to the substrate contact area, and preparing the anodization layer disposed over the surface region to a surface roughness between about 88 micro-inches and about 230 micro-inches, followed by anodizing the substrate surface to said thickness, positioning the substrate support adjacent a substrate processing region in a substrate processing chamber, wherein the substrate contact area is adjacent the substrate processing region, positioning the glass substrate on the substrate contact area.
摘要翻译：一种用于支撑玻璃基板的方法，包括提供具有铝体的基板支撑件，形成在所述基板支撑件的表面上的基板接触区域，其中形成所述基板接触区域的工艺包括在所述基板支撑件的表面区域上形成阳极氧化层铝体，所述涂层具有在约0.3密耳和约2.16密耳之间的厚度，其中所述表面区域基本上对应于所述基底接触面积，以及将所述阳极氧化层设置在所述表面区域上方的表面粗糙度在约88微英寸约230微英寸，然后将基板表面阳极化至所述厚度，将基板支撑件邻近基板处理区域定位在基板处理室中，其中基板接触区域与基板处理区域相邻，将玻璃基板定位在基板处理区域上基板接触面积。

2. 发明申请

US20080061793A1 Detection and Suppression of Electrical Arcing 有权
标题翻译：电弧的检测和抑制
公开(公告)号：US20080061793A1
公开(公告)日：2008-03-13
申请号：US11925893
申请日：2007-10-27
申请人： Suhail Anwar , Remegio Manacio , Chung-Hee Park , Dong-Kil Yim , Soo Choi
发明人： Suhail Anwar , Remegio Manacio , Chung-Hee Park , Dong-Kil Yim , Soo Choi
IPC分类号： G01R31/08 , G01N27/62
CPC分类号： G01R31/1254
摘要： Method and apparatus for detecting or suppressing electrical arcing or other abnormal change in the electrical impedance of a load connected to a power source. Preferably the load is a plasma chamber used for manufacturing electronic components such as semiconductors and flat panel displays. Arcing is detected by monitoring one or more sensors. Each sensor either responds to a characteristic of the electrical power being supplied by an electrical power source to the plasma or is coupled to the plasma chamber so as to respond to an electromagnetic condition within the chamber. Arcing is suppressed by reducing the power output for a brief period. Then the power source increases its power output, preferably to its original value. If the arcing resumes, the power source repeats the steps of reducing and then restoring the power output.
摘要翻译：用于检测或抑制连接到电源的负载的电阻抗的电弧或其他异常变化的方法和装置。优选地，负载是用于制造诸如半导体和平板显示器的电子部件的等离子体室。通过监视一个或多个传感器来检测电弧。每个传感器或者响应于由电源提供给等离子体的电力的特性，或者耦合到等离子体室，以便对室内的电磁条件作出响应。通过在短时间内减少功率输出来抑制电弧。然后电源增加其功率输出，最好提高到其原始值。如果电弧恢复，则电源重复减少然后恢复功率输出的步骤。

3. 发明申请

US20060185795A1 Anodized substrate support 有权
标题翻译：阳极氧化的底物支持
公开(公告)号：US20060185795A1
公开(公告)日：2006-08-24
申请号：US11406136
申请日：2006-04-18
申请人： Soo Choi , Beom Park , Quanyuan Shang , Robert Greene , John White , Dong-Kil Yim , Chung-Hee Park , Kam Law
发明人： Soo Choi , Beom Park , Quanyuan Shang , Robert Greene , John White , Dong-Kil Yim , Chung-Hee Park , Kam Law
IPC分类号： H01L21/306 , C23C16/00 , H05H1/24
CPC分类号： H01J37/32082 , C23C16/4581 , C25D11/04 , C25D11/16 , C25D11/18
摘要： A substrate support and method for fabricating the same are provided. In one embodiment of the invention, a substrate support includes an electrically conductive body having a substrate support surface that is covered by an electrically insulative coating. At least a portion of the coating centered on the substrate support surface has a surface finish of between about 80 to about 200 micro-inches. In another embodiment, a substrate support includes an anodized aluminum body having a surface finish on the portion of the body adapted to support a substrate thereon of between about 80 to about 200 micro-inches.
摘要翻译：提供了一种基板支撑件及其制造方法。在本发明的一个实施例中，衬底支撑件包括具有由电绝缘涂层覆盖的衬底支撑表面的导电体。以基板支撑表面为中心的涂层的至少一部分具有介于约80至约200微英寸之间的表面光洁度。在另一个实施例中，衬底支撑件包括阳极化铝体，其在主体部分上具有表面光洁度，其适于将基底支撑在约80至约200微英寸之间。

4. 发明申请

US20100013626A1 SUBSTRATE LIFT PIN SENSOR 审中-公开
标题翻译：基板提升引脚传感器
公开(公告)号：US20100013626A1
公开(公告)日：2010-01-21
申请号：US12501763
申请日：2009-07-13
申请人： Chung-Hee Park , John M. White , Dong Kil Yim
发明人： Chung-Hee Park , John M. White , Dong Kil Yim
IPC分类号： G08B19/00 , B05C11/00
CPC分类号： C23C16/4583 , C23C16/52 , H01L21/67259 , H01L21/68742
摘要： Embodiments disclosed herein include a method and apparatus for supporting a substrate. When a substrate is inserted into a processing chamber by an end effector robot, the substrate is placed on one or more lift pins. The lift pins may include a sensing mechanism that can detect whether the substrate is cracked, the lift pin is broken, or the lift pin sticks to the bushing. By detecting the aforementioned conditions, uniform, repeatable deposition may be obtained for multiple substrates.
摘要翻译：本文公开的实施例包括用于支撑衬底的方法和装置。当通过端部执行器机器人将基板插入处理室时，将基板放置在一个或多个升降销上。提升销可以包括感测机构，其可以检测基板是否破裂，提升销是否断裂，或者提升销是否粘附到套管上。通过检测上述条件，可以获得对于多个基板的均匀的，可重复的沉积。

5. 发明申请

US20080132080A1 Method of avoiding haze formation on surfaces of silicon-containing PECVD-deposited thin films 有权
标题翻译：在含硅PECVD沉积薄膜的表面上避免雾霾形成的方法
公开(公告)号：US20080132080A1
公开(公告)日：2008-06-05
申请号：US11607702
申请日：2006-12-01
申请人： Suhail Anwar , Chung-Hee Park , Beom Soo Park , Han Byoul Kim , Soo Young Choi , John M. White
发明人： Suhail Anwar , Chung-Hee Park , Beom Soo Park , Han Byoul Kim , Soo Young Choi , John M. White
IPC分类号： H01L21/31
CPC分类号： H01L21/02274 , C23C16/345 , H01L21/0217 , H01L21/02532 , H01L21/0262 , H01L21/3185 , H01L21/67161 , H01L21/67207 , H01L21/67236 , H01L29/66765 , H01L31/1804 , H01L31/202 , Y02E10/547 , Y02P70/521
摘要： A method of PECVD deposition of silicon-containing films has been discovered and further developed. The method is particularly useful when the films are deposited on substrates having surface areas which are larger than 25,000 cm2. The method prevents the deposition of partially reacted silicon-containing species which form a powdery material or haze (contaminant compound) on the substrate surface. The contaminant compounds are avoided by assuring that the power applied to form a plasma in the PECVD process is maintained, at least at a minimal level, until reactive silicon-containing precursor gases present above the surface of the substrate have been reacted or evacuated from the plasma processing area.
摘要翻译：已经发现并进一步开发了含硅膜的PECVD沉积方法。当膜沉积在具有大于25,000cm 2的表面积的基底上时，该方法特别有用。该方法防止在基材表面上沉积形成粉末状物质或雾度（污染物化合物）的部分反应的含硅物质。通过确保在PECVD工艺中施加以形成等离子体的功率至少保持最小水平，直到存在于衬底表面上方的反应性含硅前体气体已经从等离子处理区。

6. 发明授权

US08372205B2 Reducing electrostatic charge by roughening the susceptor 有权
标题翻译：通过粗化基座来减少静电电荷
公开(公告)号：US08372205B2
公开(公告)日：2013-02-12
申请号：US11182168
申请日：2005-07-15
申请人： Soo Young Choi , Beom Soo Park , Quanyuan Shang , John M. White , Dong-Kil Yim , Chung-Hee Park
发明人： Soo Young Choi , Beom Soo Park , Quanyuan Shang , John M. White , Dong-Kil Yim , Chung-Hee Park
IPC分类号： H01L21/306 , C23C16/00 , C23F1/00
CPC分类号： C23C16/4581 , B24C1/06 , B24C1/10 , B24C3/322 , C23C16/4404 , C23C16/545 , C25D11/04 , C25D11/16 , C25D11/18 , H01J37/32082 , H01J37/32477 , H01J37/32559 , H01J37/32715 , H01L21/68757
摘要： A substrate support and method for fabricating the same are provided. In one embodiment of the invention, a substrate support includes an electrically conductive body having a substrate support surface that is covered by an electrically insulative coating. At least a portion of the coating centered on the substrate support surface has a surface finish of between about 200 to about 2000 micro-inches. In another embodiment, a substrate support includes an anodized aluminum body having a surface finish on the portion of the body adapted to support a substrate thereon of between about 200 to about 2000 micro-inches. In one embodiment, a substrate support assembly includes an electrically conductive body having a substrate support surface, a substrate support structure that is adapted to support the conductive body and the conductive body is covered by an electrically insulative coating.
摘要翻译：提供了一种基板支撑件及其制造方法。在本发明的一个实施例中，衬底支撑件包括具有由电绝缘涂层覆盖的衬底支撑表面的导电体。以基板支撑表面为中心的涂层的至少一部分具有介于约200至约2000微英寸之间的表面光洁度。在另一个实施例中，衬底支撑件包括阳极化铝体，其在主体部分上具有表面光洁度，其适于在其上支撑约200至约2000微英寸的衬底。在一个实施例中，衬底支撑组件包括具有衬底支撑表面的导电体，适于支撑导电体的衬底支撑结构，并且导电体被电绝缘涂层覆盖。

7. 发明授权

US07514936B2 Detection and suppression of electrical arcing 有权
标题翻译：检测和抑制电弧
公开(公告)号：US07514936B2
公开(公告)日：2009-04-07
申请号：US11925893
申请日：2007-10-27
申请人： Suhail Anwar , Remegio Manacio , Chung-Hee Park , Dong-Kil Yim , Soo Young Choi
发明人： Suhail Anwar , Remegio Manacio , Chung-Hee Park , Dong-Kil Yim , Soo Young Choi
IPC分类号： G01N27/62
CPC分类号： G01R31/1254
摘要： Method and apparatus for detecting or suppressing electrical arcing or other abnormal change in the electrical impedance of a load connected to a power source. Preferably the load is a plasma chamber used for manufacturing electronic components such as semiconductors and flat panel displays. Arcing is detected by monitoring one or more sensors. Each sensor either responds to a characteristic of the electrical power being supplied by an electrical power source to the plasma or is coupled to the plasma chamber so as to respond to an electromagnetic condition within the chamber. Arcing is suppressed by reducing the power output for a brief period. Then the power source increases its power output, preferably to its original value. If the arcing resumes, the power source repeats the steps of reducing and then restoring the power output.
摘要翻译：用于检测或抑制连接到电源的负载的电阻抗的电弧或其他异常变化的方法和装置。优选地，负载是用于制造诸如半导体和平板显示器的电子部件的等离子体室。通过监视一个或多个传感器来检测电弧。每个传感器或者响应于由电源提供给等离子体的电力的特性，或者耦合到等离子体室，以便对室内的电磁条件作出响应。通过在短时间内减少功率输出来抑制电弧。然后电源增加其功率输出，最好提高到其原始值。如果电弧恢复，则电源重复减少然后恢复功率输出的步骤。

8. 发明申请

US20060049831A1 Detection and suppression of electrical arcing 有权
公开(公告)号：US20060049831A1
公开(公告)日：2006-03-09
申请号：US11149896
申请日：2005-06-10
申请人： Suhail Anwar , Remegio Manacio , Chung-Hee Park , Dong-Kil Yim , Soo Choi
发明人： Suhail Anwar , Remegio Manacio , Chung-Hee Park , Dong-Kil Yim , Soo Choi
IPC分类号： G01R31/12
CPC分类号： G01R31/1254
摘要： Method and apparatus for detecting or suppressing electrical arcing or other abnormal change in the electrical impedance of a load connected to a power source. Preferably the load is a plasma chamber used for manufacturing electronic components such as semiconductors and flat panel displays. Arcing is detected by monitoring one or more sensors. Each sensor either responds to a characteristic of the electrical power being supplied by an electrical power source to the plasma or is coupled to the plasma chamber so as to respond to an electromagnetic condition within the chamber. Arcing is suppressed by reducing the power output for a brief period. Then the power source increases its power output, preferably to its original value. If the arcing resumes, the power source repeats the steps of reducing and then restoring the power output.

9. 发明授权

US07292045B2 Detection and suppression of electrical arcing 有权
标题翻译：检测和抑制电弧
公开(公告)号：US07292045B2
公开(公告)日：2007-11-06
申请号：US11149896
申请日：2005-06-10
申请人： Suhail Anwar , Remegio Manacio , Chung-Hee Park , Dong-Kil Yim , Soo Young Choi
发明人： Suhail Anwar , Remegio Manacio , Chung-Hee Park , Dong-Kil Yim , Soo Young Choi
IPC分类号： G01R31/08 , G01N27/66
CPC分类号： G01R31/1254
摘要： Method and apparatus for detecting or suppressing electrical arcing or other abnormal change in the electrical impedance of a load connected to a power source. Preferably the load is a plasma chamber used for manufacturing electronic components such as semiconductors and flat panel displays. Arcing is detected by monitoring one or more sensors. Each sensor either responds to a characteristic of the electrical power being supplied by an electrical power source to the plasma or is coupled to the plasma chamber so as to respond to an electromagnetic condition within the chamber. Arcing is suppressed by reducing the power output for a brief period. Then the power source increases its power output, preferably to its original value. If the arcing resumes, the power source repeats the steps of reducing and then restoring the power output.
摘要翻译：用于检测或抑制连接到电源的负载的电阻抗的电弧或其他异常变化的方法和装置。优选地，负载是用于制造诸如半导体和平板显示器的电子部件的等离子体室。通过监视一个或多个传感器来检测电弧。每个传感器或者响应于由电源提供给等离子体的电力的特性，或者耦合到等离子体室，以便对室内的电磁条件作出响应。通过在短时间内减少功率输出来抑制电弧。然后电源增加其功率输出，最好提高到其原始值。如果电弧恢复，则电源重复减少然后恢复功率输出的步骤。

10. 发明授权

US07589031B2 Method of avoiding haze formation on surfaces of silicon-containing PECVD-deposited thin films 有权
标题翻译：在含硅PECVD沉积薄膜的表面上避免雾霾形成的方法
公开(公告)号：US07589031B2
公开(公告)日：2009-09-15
申请号：US11607702
申请日：2006-12-01
申请人： Suhail Anwar , Chung-Hee Park , Beom Soo Park , Han Byoul Kim , Soo Young Choi , John M. White
发明人： Suhail Anwar , Chung-Hee Park , Beom Soo Park , Han Byoul Kim , Soo Young Choi , John M. White
IPC分类号： H01L21/31
CPC分类号： H01L21/02274 , C23C16/345 , H01L21/0217 , H01L21/02532 , H01L21/0262 , H01L21/3185 , H01L21/67161 , H01L21/67207 , H01L21/67236 , H01L29/66765 , H01L31/1804 , H01L31/202 , Y02E10/547 , Y02P70/521
摘要： A method of PECVD deposition of silicon-containing films has been discovered and further developed. The method is particularly useful when the films are deposited on substrates having surface areas which are larger than 25,000 cm2. The method prevents the deposition of partially reacted silicon-containing species which form a powdery material or haze (contaminant compound) on the substrate surface. The contaminant compounds are avoided by assuring that the power applied to form a plasma in the PECVD process is maintained, at least at a minimal level, until reactive silicon-containing precursor gases present above the surface of the substrate have been reacted or evacuated from the plasma processing area.
摘要翻译：已经发现并进一步开发了含硅膜的PECVD沉积方法。当膜沉积在具有大于25,000cm 2的表面积的基底上时，该方法是特别有用的。该方法防止在基材表面上沉积形成粉末状物质或雾度（污染物化合物）的部分反应的含硅物质。通过确保在PECVD工艺中施加以形成等离子体的功率至少保持最小水平，直到存在于衬底表面上方的反应性含硅前体气体已经从等离子处理区。

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