专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07785672B2 Method of controlling the film properties of PECVD-deposited thin films 有权
标题翻译：控制PECVD沉积薄膜的膜性能的方法
公开(公告)号：US07785672B2
公开(公告)日：2010-08-31
申请号：US11021416
申请日：2004-12-22
申请人： Soo Young Choi , John M. White , Qunhua Wang , Beom Soo Park
发明人： Soo Young Choi , John M. White , Qunhua Wang , Beom Soo Park
IPC分类号： H05G1/24 , H05H1/02
CPC分类号： H01J37/32082 , C23C16/345 , C23C16/45565 , C23C16/5096 , H01J37/3244 , H01L21/0217 , H01L21/02274 , H01L21/31612
摘要： We have discovered methods of controlling a combination of PECVD deposition process parameters during deposition of thin films which provides improved control over surface standing wave effects which affect deposited film thickness uniformity and physical property uniformity. By minimizing surface standing wave effects, the uniformity of film properties across a substrate surface onto which the films have been deposited is improved. In addition, we have developed a gas diffusion plate design which assists in the control of plasma density to be symmetrical or asymmetrical over a substrate surface during film deposition, which also provides improved control over uniformity of deposited film thickness.
摘要翻译：我们已经发现了在沉积薄膜期间控制PECVD沉积工艺参数的组合的方法，其提供了影响沉积膜厚度均匀性和物理性质均匀性的表面驻波效应的改进控制。通过最小化表面驻波效应，改善了膜沉积在其上的衬底表面上的膜性质的均匀性。此外，我们开发了一种气体扩散板设计，其有助于在膜沉积期间等离子体密度在衬底表面上对称或不对称，这也提供了对沉积膜厚度的均匀性的改进的控制。

2. 发明授权

US10676817B2 Flip edge shadow frame 有权
公开(公告)号：US10676817B2
公开(公告)日：2020-06-09
申请号：US13569064
申请日：2012-08-07
申请人： Qunhua Wang , Soo Young Choi , Robin L. Tiner , John M. White , Gaku Furuta , Beom Soo Park
发明人： Qunhua Wang , Soo Young Choi , Robin L. Tiner , John M. White , Gaku Furuta , Beom Soo Park
IPC分类号： C23C16/04 , C23C16/458 , C23C14/04
摘要： Device for processing a substrate are described herein. An apparatus for controlling deposition on a substrate can include a chamber comprising a shadow frame support, a substrate support comprising a substrate supporting surface, a shadow frame with a shadow frame body including a first support surface, a second support surface opposite the first surface, and a detachable lip connected with the shadow frame body. The detachable lip can include a support connection, a first lip surface facing the substrate, a second lip surface opposite the first lip surface, a first edge positioned over the first support surface, and a second edge opposite the first edge to contact the substrate.

3. 发明授权

US08083853B2 Plasma uniformity control by gas diffuser hole design 有权
标题翻译：通过气体扩散器孔设计的等离子体均匀性控制
公开(公告)号：US08083853B2
公开(公告)日：2011-12-27
申请号：US10889683
申请日：2004-07-12
申请人： Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
发明人： Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
IPC分类号： C23C16/00 , C23C16/455 , H01L21/3065
CPC分类号： H01J37/3244 , C23C16/345 , C23C16/455 , C23C16/45565 , C23C16/5096 , H01J37/32082 , H01J37/32091 , H01J37/32541 , H01J37/32596 , H01J2237/327 , H01J2237/3321 , H01J2237/3323 , H01J2237/3325 , Y10T29/49885 , Y10T29/49996
摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.
摘要翻译：提供了用于在处理室中分配气体的气体扩散板的实施例。气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性。从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。扩散板的弯曲可以通过热处理或真空工艺来实现。从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

4. 发明授权

US09200368B2 Plasma uniformity control by gas diffuser hole design 有权
标题翻译：通过气体扩散器孔设计的等离子体均匀性控制
公开(公告)号：US09200368B2
公开(公告)日：2015-12-01
申请号：US13207227
申请日：2011-08-10
申请人： Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
发明人： Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
IPC分类号： C23C16/455 , C23C16/34 , C23C16/509 , H01J37/32
CPC分类号： H01J37/3244 , C23C16/345 , C23C16/455 , C23C16/45565 , C23C16/5096 , H01J37/32082 , H01J37/32091 , H01J37/32541 , H01J37/32596 , H01J2237/327 , H01J2237/3321 , H01J2237/3323 , H01J2237/3325 , Y10T29/49885 , Y10T29/49996
摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.
摘要翻译：提供了用于在处理室中分配气体的气体扩散板的实施例。气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性。从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。扩散板的弯曲可以通过热处理或真空工艺来实现。从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

5. 发明申请

US20110290183A1 Plasma Uniformity Control By Gas Diffuser Hole Design 有权
标题翻译：通过气体扩散器孔设计的等离子体均匀性控制
公开(公告)号：US20110290183A1
公开(公告)日：2011-12-01
申请号：US13207227
申请日：2011-08-10
申请人： Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
发明人： Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
IPC分类号： C23C16/455
CPC分类号： H01J37/3244 , C23C16/345 , C23C16/455 , C23C16/45565 , C23C16/5096 , H01J37/32082 , H01J37/32091 , H01J37/32541 , H01J37/32596 , H01J2237/327 , H01J2237/3321 , H01J2237/3323 , H01J2237/3325 , Y10T29/49885 , Y10T29/49996
摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.
摘要翻译：提供了用于在处理室中分配气体的气体扩散板的实施例。气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性。从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。扩散板的弯曲可以通过热处理或真空工艺来实现。从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

6. 发明授权

US07125758B2 Controlling the properties and uniformity of a silicon nitride film by controlling the film forming precursors 有权
标题翻译：通过控制成膜前体来控制氮化硅膜的性能和均匀性
公开(公告)号：US07125758B2
公开(公告)日：2006-10-24
申请号：US10829016
申请日：2004-04-20
申请人： Soo Young Choi , Tae Kyung Won , Gaku Furuta , Qunhua Wang , John M. White , Beom Soo Park
发明人： Soo Young Choi , Tae Kyung Won , Gaku Furuta , Qunhua Wang , John M. White , Beom Soo Park
IPC分类号： H01L21/471
CPC分类号： H01L21/0217 , C23C16/345 , H01L21/02274 , H01L21/3185 , H01L29/4908 , H01L29/66765 , H01L29/78669
摘要： We have developed a method of PECVD depositing a-SiNx:H films which are useful in a TFT device as gate dielectric and passivation layers, when a series of TFT devices are arrayed over a substrate having a surface area larger than about 1 m2, which may be in the range of about 4.1 m2, and even as large as 9 m2. The a-SiNx:H films provide a uniformity of film thickness and uniformity of film properties, including chemical composition, which are necessary over such large substrate surface areas. The films produced by the method are useful for both liquid crystal active matrix displays and for organic light emitting diode control.
摘要翻译：我们已经开发了一种PECVD沉积a-SiN＆lt; x＆gt;：H膜的方法，其可用于TFT器件作为栅极电介质和钝化层，当一系列TFT器件排列在具有表面的衬底上时大于约1m 2的区域，其可以在约4.1m 2范围内，甚至大至9m 2/2。 a-SiN＆lt; x＆gt;：H膜提供了膜厚度的均匀性和膜特性的均匀性，包括在这种大的基材表面区域上必需的化学成分。通过该方法生产的膜对于液晶有源矩阵显示器和有机发光二极管控制是有用的。

7. 发明授权

US09287137B2 Methods for depositing a silicon containing layer with argon gas dilution 有权
标题翻译：用氩气稀释沉积含硅层的方法
公开(公告)号：US09287137B2
公开(公告)日：2016-03-15
申请号：US13630901
申请日：2012-09-28
申请人： Qunhua Wang , Weijie Wang , Young Jin Choi , Seon-Mee Cho , Yi Cui , Beom Soo Park , Soo Young Choi
发明人： Qunhua Wang , Weijie Wang , Young Jin Choi , Seon-Mee Cho , Yi Cui , Beom Soo Park , Soo Young Choi
IPC分类号： H01L29/10 , H01L29/12 , H01L21/316 , H01L29/786 , H01L21/31 , H01L21/02 , C23C16/24 , C23C16/34 , C23C16/40 , C23C16/505 , C23C16/56 , H01L29/66 , H01L21/77
CPC分类号： H01L21/31 , C23C16/24 , C23C16/345 , C23C16/401 , C23C16/505 , C23C16/56 , H01L21/02422 , H01L21/02425 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/02664 , H01L21/02675 , H01L29/66757 , H01L29/786 , H01L29/7869 , H01L2021/775
摘要： Embodiments of the disclosure generally provide methods of forming a silicon containing layers in TFT devices. The silicon can be used to form the active channel in a LTPS TFT or be utilized as an element in a gate dielectric layer, a passivation layer or even an etch stop layer. The silicon containing layer is deposited by a vapor deposition process whereby an inert gas, such as argon, is introduced along with the silicon precursor. The inert gas functions to drive out weak, dangling silicon-hydrogen bonds or silicon-silicon bonds so that strong silicon-silicon or silicon-oxygen bonds remain to form a substantially hydrogen free silicon containing layer.
摘要翻译：本公开的实施例通常提供在TFT器件中形成含硅层的方法。硅可用于在LTPS TFT中形成有源沟道，或者用作栅极介电层，钝化层或甚至蚀刻停止层中的元素。通过气相沉积工艺沉积含硅层，由此惰性气体如氩气与硅前体一起引入。惰性气体起到驱除弱的，悬挂的硅 - 氢键或硅 - 硅键的作用，使得强硅硅或硅 - 氧键保留以形成基本上不含氢的含硅层。

8. 发明申请

US20130087783A1 METHODS FOR DEPOSITING A SILICON CONTAINING LAYER WITH ARGON GAS DILUTION 有权
标题翻译：用含有气体稀释剂的含硅层的方法
公开(公告)号：US20130087783A1
公开(公告)日：2013-04-11
申请号：US13630901
申请日：2012-09-28
申请人： Qunhua Wang , Weijie Wang , Young Jin Choi , Seon-Mee Cho , Yi Cui , Beom Soo Park , Soo Young Choi
发明人： Qunhua Wang , Weijie Wang , Young Jin Choi , Seon-Mee Cho , Yi Cui , Beom Soo Park , Soo Young Choi
IPC分类号： H01L21/316 , H01L21/31 , H01L29/786
CPC分类号： H01L21/31 , C23C16/24 , C23C16/345 , C23C16/401 , C23C16/505 , C23C16/56 , H01L21/02422 , H01L21/02425 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/02664 , H01L21/02675 , H01L29/66757 , H01L29/786 , H01L29/7869 , H01L2021/775
摘要： Embodiments of the disclosure generally provide methods of forming a silicon containing layers in TFT devices. The silicon can be used to form the active channel in a LTPS TFT or be utilized as an element in a gate dielectric layer, a passivation layer or even an etch stop layer. The silicon containing layer is deposited by a vapor deposition process whereby an inert gas, such as argon, is introduced along with the silicon precursor. The inert gas functions to drive out weak, dangling silicon-hydrogen bonds or silicon-silicon bonds so that strong silicon-silicon or silicon-oxygen bonds remain to form a substantially hydrogen free silicon containing layer.
摘要翻译：本公开的实施例通常提供在TFT器件中形成含硅层的方法。硅可用于在LTPS TFT中形成有源沟道，或者用作栅极介电层，钝化层或甚至蚀刻停止层中的元素。通过气相沉积工艺沉积含硅层，由此惰性气体如氩气与硅前体一起引入。惰性气体起到驱除弱的，悬挂的硅 - 氢键或硅 - 硅键的作用，使得强硅硅或硅 - 氧键保留以形成基本上不含氢的含硅层。

9. 发明申请

US20120009347A1 PRECISE TEMPERATURE CONTROL FOR TEOS APPLICATION BY HEAT TRANSFER FLUID 审中-公开
标题翻译：通过热传递流体对TEOS应用的精密温度控制
公开(公告)号：US20120009347A1
公开(公告)日：2012-01-12
申请号：US12831731
申请日：2010-07-07
申请人： Dongsuh Lee , Weijie Wang , William N. Sterling , Sam H. Kim , Soo Young Choi , Beom Soo Park , Beom Soo Kim , Qunhua Wang
发明人： Dongsuh Lee , Weijie Wang , William N. Sterling , Sam H. Kim , Soo Young Choi , Beom Soo Park , Beom Soo Kim , Qunhua Wang
IPC分类号： C23C16/52 , B01F15/06 , C23C16/00 , B01F15/02
CPC分类号： B01F5/0077 , B01F5/0688 , B01F15/065 , B01F2015/061 , C23C16/45512
摘要： Embodiments of the invention generally provide a mixing block for mixing precursors and/or cleaning agent which has the advantage of maintaining the temperature and improving the mixing effect of the precursors, cleaning agent or the mixture thereof to eliminate the substrate-to-substrate variation, thereby providing improved process uniformity.
摘要翻译：本发明的实施方案通常提供用于混合前体和/或清洁剂的混合块，其具有保持温度并改善前体，清洁剂或其混合物的混合效果以消除基材对基底变化的优点，从而提供改进的工艺均匀性。

10. 发明申请

US20080178807A1 GAS DISTRIBUTION UNIFORMITY IMPROVEMENT BY BAFFLE PLATE WITH MULTI-SIZE HOLES FOR LARGE SIZE PECVD SYSTEMS 审中-公开
标题翻译：气体分布均匀度改进由具有多个尺寸PECVD系统的多尺寸孔板
公开(公告)号：US20080178807A1
公开(公告)日：2008-07-31
申请号：US12099112
申请日：2008-04-07
申请人： Qunhua Wang , Li Hou , Sanjay Yadav , Gaku Furuta , Kenji Omori , Soo Young Choi , John M. White
发明人： Qunhua Wang , Li Hou , Sanjay Yadav , Gaku Furuta , Kenji Omori , Soo Young Choi , John M. White
IPC分类号： C23C16/00
CPC分类号： H01J37/3244 , C23C16/45565 , C23F4/00 , H01J37/32449
摘要： Embodiments of a gas distribution plate for distributing gas in a processing chamber for large area substrates are provided. The embodiments describe a gas distribution plate assembly for a plasma processing chamber having a cover plate comprises a diffuser plate having an upstream side, a downstream side facing a processing region, and a plurality of gas passages formed through the diffuser plate, and a baffle plate, placed between the cover plate of the process chamber and the diffuser plate, having a plurality of holes extending from the upper surface to the lower surface of the baffle plate, wherein the plurality of holes have at least two sizes. The small pinholes of the baffle plate are used to allow sufficient pass-through of gas mixture, while the large holes of the baffle plate are used to improve the process uniformity across the substrate.
摘要翻译：提供了用于在大面积基板的处理室中分配气体的气体分配板的实施例。实施方式描述了一种用于等离子体处理室的气体分配板组件，其具有盖板，该盖板包括具有上游侧，面向加工区域的下游侧和通过扩散板形成的多个气体通道的扩散板，以及挡板，放置在处理室的盖板和扩散板之间，具有从挡板的上表面延伸到下表面的多个孔，其中多个孔具有至少两个尺寸。挡板的小针孔用于允许气体混合物的充分通过，而挡板的大孔用于改善基板上的工艺均匀性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式