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1. 发明授权

US5623306A Dark current suppression for solid state image sensing device 失效
标题翻译：固态摄像装置的暗电流抑制
公开(公告)号：US5623306A
公开(公告)日：1997-04-22
申请号：US494758
申请日：1995-06-26
申请人： Nobuyuki Kajihara , Gen Sudo , Kenji Arinaga , Koji Fujiwara , Hiroko Nakamura
发明人： Nobuyuki Kajihara , Gen Sudo , Kenji Arinaga , Koji Fujiwara , Hiroko Nakamura
IPC分类号： H01L27/148 , H04N5/335 , H04N5/347 , H04N5/361 , H04N5/365 , H04N5/367 , H04N5/369 , H04N5/372 , H04N5/374 , H04N5/3745 , H04N9/64
CPC分类号： H01L27/14856 , H01L27/14806 , H04N5/361 , H04N5/37206 , H04N5/372 , H04N5/374
摘要： A solid-state image sensing device having a plurality of pixels each of which outputs to a transmission portion (12) a signal charge corresponding to an amount of light projected thereon. The signal charge transmitted by the transmission portion (12) is outputted as an image signal for each pixel from the solid state image sensing device. Each pixel includes a photo-diode (32), a storage portion (41) for storing charge corresponding to a current output from the photo-diode (32) onto which light is projected, a transfer portion (42) for transferring the charge stored by the storage portion to the transmission portion, and a control portion (39) for controlling an amount of charge to be received by the transmission portion based on a dark current characteristic of a corresponding photo-diode (32).
摘要翻译：一种具有多个像素的固态图像感测装置，每个像素向传输部分（12）输出对应于投射在其上的光量的信号电荷。由固体摄像装置输出由发送部（12）发送的信号电荷作为每个像素的图像信号。每个像素包括光电二极管（32），存储部分（41），用于存储对应于光投射到光电二极管（32）的电流的电荷;转移部分（42），用于传送存储的电荷以及控制部（39），用于根据相应的光电二极管（32）的暗电流特性来控制由发送部分接收的电荷量。

2. 发明授权

US5196692A Photoelectric transducer switchable to a high-resolution or high-sensitivity mode 失效
标题翻译：光电转换器可切换到高分辨率或高灵敏度模式
公开(公告)号：US5196692A
公开(公告)日：1993-03-23
申请号：US825497
申请日：1992-01-24
申请人： Kenji Arinaga , Nobuyuki Kajihara , Gen Sudo , Koji Fujiwara , Soichiro Hikida , Yuichiro Ito
发明人： Kenji Arinaga , Nobuyuki Kajihara , Gen Sudo , Koji Fujiwara , Soichiro Hikida , Yuichiro Ito
IPC分类号： H01L27/14 , H01L27/146 , H01L31/032
CPC分类号： H01L27/14643 , H01L31/0325
摘要： A photoelectric transducer having a photocell includes a compound semiconductor substrate in which a photodiode is doped by an impurity of a conductivity type opposite to that of the substrate. An enclosure region is formed by the same doping impurity as the photodiode, surrounding but spaced apart from the photodiode. A gate electrode is formed on a portion of an insulation layer, the latter formed all over the substrate surface, which extends between the photodiode and the enclosure region. The enclosure region is selectively connected, via a contact hole through the insulation layer and a first switch to ground level. The gate electrode is connected via a second switch to a predetermined voltage having the same polarity as the conductivity type of the substrate. In a high-resolution mode, the first switch is closed and the second switch is open, so that the grounded enclosure region prevents carriers generated in the substrate, between the photodiode and the enclosure region, from flowing into an adjacent cell. In a high-sensitivity mode, the first switch is opened and the second switch is closed, so that the gate voltage generates a channel which electrically connects the photodiode to the enclosure region; thus, the carriers generated within the enclosure are all gathered to the photodiode. The first and second switches may be fabricated on a second semiconductor substrate, arranged parallel to but spaced from the compound semiconductor substrate and electrically connected thereto via bumps.

3. 发明授权

US5534109A Method for etching HgCdTe substrate 失效
标题翻译：蚀刻HgCdTe基板的方法
公开(公告)号：US5534109A
公开(公告)日：1996-07-09
申请号：US320249
申请日：1994-10-11
申请人： Koji Fujiwara , Gen Sudo , Kenji Arinaga
发明人： Koji Fujiwara , Gen Sudo , Kenji Arinaga
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/465 , H01L31/18 , H01L21/306 , B44C1/22
CPC分类号： H01L31/1832 , H01L21/465
摘要： A method for etching an HgCdTe substrate selectively by dry etching. A substrate is selectively etched without damaging the substrate during a simple process in which the higher selectivity of an HgCdTe substrate versus a resist mask is obtainable. Removal of the resist mask after etching is easy. The etching gas contains molecules having a bond of nitrogen and hydrogen and is formed into plasma. An HgCdTe substrate is etched with a resist film as a mask by the plasma gas.
摘要翻译：通过干蚀刻选择性地蚀刻HgCdTe衬底的方法。在可以获得HgCdTe衬底与抗蚀剂掩模的更高选择性的简单工艺中，衬底被选择性地蚀刻而不损坏衬底。蚀刻后去除抗蚀剂掩模容易。蚀刻气体含有具有氮和氢键的分子并形成等离子体。用等离子体气体用抗蚀剂膜作为掩模蚀刻HgCdTe衬底。

4. 发明授权

US08945944B2 Device and method for quantitatively determining an analyte, a method for determining an effective size of a molecule, a method for attaching molecules to a substrate, and a device for detecting molecules 有权
标题翻译：用于定量测定分析物的装置和方法，确定分子的有效尺寸的方法，将分子附着于基底的方法以及用于检测分子的装置
公开(公告)号：US08945944B2
公开(公告)日：2015-02-03
申请号：US12923588
申请日：2010-09-29
申请人： Kenji Arinaga , Ulrich Rant
发明人： Kenji Arinaga , Ulrich Rant
IPC分类号： G01N33/543
CPC分类号： G01N33/5438 , B01J2219/00605 , C12Q2527/137 , C12Q2527/143 , C12Q2565/518 , G01N33/543
摘要： A device for quantitatively determining an analyte is provided to conspicuously improve the performance of the quantitative determination. This device is equipped with a flow channel, an analyte detecting unit for capturing and detecting the analyte, and a quantitative measurement unit for quantitatively determining the analyte, wherein a signal generated when the analyte detecting unit has detected the analyte is divided into a plurality of parts in the direction of the flow in the flow channel at the quantitative measurement unit for processing. Also provided are technologies including one for controlling the density of molecules attached to the surface of a solid. In these technologies, when molecules are attached to a substrate, the density of attached molecules is controlled, by having an electrolyte also present in a solution containing the molecules to adjust the screening effect by the electrolyte, and by taking into consideration the effective size of a molecule.
摘要翻译：提供了一种用于定量测定分析物的装置，以显着提高定量测定的性能。该装置配备有流路，用于捕获和检测分析物的分析物检测单元和用于定量测定分析物的定量测量单元，其中当分析物检测单元检测到分析物时产生的信号被分成多个在定量测量单元处的流动通道中的流动方向上的部件进行处理。还提供了包括用于控制附着在固体表面上的分子的密度的技术。在这些技术中，当分子连接到基底上时，通过在含有分子的溶液中也存在电解质来调节附着分子的密度，以调节电解质的筛选效果，并考虑到有效尺寸一个分子

5. 发明申请

US20090088333A1 TARGET MOLECULE EVALUATION METHOD AND APPARATUS 审中-公开
标题翻译：目标分子评估方法和装置
公开(公告)号：US20090088333A1
公开(公告)日：2009-04-02
申请号：US12236810
申请日：2008-09-24
申请人： Michihiko Aki , Kenji Arinaga
发明人： Michihiko Aki , Kenji Arinaga
IPC分类号： C40B30/04 , C40B60/12
CPC分类号： G01N33/5438 , G01N21/66 , G01N21/68 , G01N21/69 , G01N2021/6439
摘要： AC potential is applied between a substrate electrode provided on a substrate and a counter electrode, a sample is brought into contact with a probe molecule bound to the substrate electrode, and a fluorescent signal obtained from a fluorescent marker provided on the probe molecule is observed to evaluate a target molecule in the sample that has bound to the probe molecule, wherein the target molecule is evaluated by measuring a signal intensity and/or a signal amplitude.
摘要翻译：在设置在基板上的基板电极和对置电极之间施加AC电位，使样品与与基板电极结合的探针分子接触，并且观察到从设置在探针分子上的荧光标记获得的荧光信号评估已经结合到探针分子的样品中的靶分子，其中通过测量信号强度和/或信号幅度来评估靶分子。

6. 发明申请

US20080003666A1 Method and apparatus for producing a molecular film with an adjusted density 有权
标题翻译：用于生产具有调节密度的分子膜的方法和设备
公开(公告)号：US20080003666A1
公开(公告)日：2008-01-03
申请号：US11700264
申请日：2007-01-31
申请人： Kenji Arinaga , Ulrich Rant , Erika Pringsheim , Jelena Knezevic
发明人： Kenji Arinaga , Ulrich Rant , Erika Pringsheim , Jelena Knezevic
IPC分类号： C12M1/00
CPC分类号： G01N33/54353
摘要： An object of the present invention is to provide a technique that can adjust a molecular density of the film of functional molecules (e.g. DNA molecules), which is utilized for biochips such as DNA chip, to a desired degree efficiently and easily. The method for producing a molecular film with an adjusted density according to the present invention includes forming a molecular film and adjusting a molecular density. In the forming a molecular film, a molecular film composed of molecules is formed on a conductive substrate, wherein the molecule includes a region capable of binding to the conductive substrate at least in a portion thereof. In the density adjusting, a molecular density of the molecular film is adjusted by desorbing a part of the molecules which make up the molecular film from the conductive substrate.
摘要翻译：本发明的一个目的是提供一种可以有效且容易地调整用于生物芯片如DNA芯片的功能分子（例如DNA分子）的膜的分子密度达到期望的程度的技术。根据本发明的具有调节密度的分子膜的制备方法包括形成分子膜并调节分子密度。在形成分子膜时，在导电性基板上形成由分子构成的分子膜，其中，所述分子具有能够至少部分地与导电性基板结合的区域。在密度调节中，分子膜的分子密度通过从导电性基材上解吸构成分子膜的一部分分子来调节。

7. 发明授权

US08568966B2 Method and apparatus for producing a molecular film with an adjusted density 有权
标题翻译：用于生产具有调节密度的分子膜的方法和设备
公开(公告)号：US08568966B2
公开(公告)日：2013-10-29
申请号：US11700264
申请日：2007-01-31
申请人： Kenji Arinaga , Ulrich Rant , Erika Pringsheim , Jelena Knezevic
发明人： Kenji Arinaga , Ulrich Rant , Erika Pringsheim , Jelena Knezevic
IPC分类号： C12Q1/00
CPC分类号： G01N33/54353
摘要： An object of the present invention is to provide a technique that can adjust a molecular density of the film of functional molecules (e.g. DNA molecules), which is utilized for biochips such as DNA chip, to a desired degree efficiently and easily. The method for producing a molecular film with an adjusted density according to the present invention includes forming a molecular film and adjusting a molecular density. In the forming a molecular film, a molecular film composed of molecules is formed on a conductive substrate, wherein the molecule includes a region capable of binding to the conductive substrate at least in a portion thereof. In the density adjusting, a molecular density of the molecular film is adjusted by desorbing a part of the molecules which make up the molecular film from the conductive substrate.
摘要翻译：本发明的一个目的是提供一种可以有效且容易地调整用于生物芯片如DNA芯片的功能分子（例如DNA分子）的膜的分子密度达到期望的程度的技术。根据本发明的具有调节密度的分子膜的制备方法包括形成分子膜并调节分子密度。在形成分子膜时，在导电性基板上形成由分子构成的分子膜，其中，所述分子具有能够至少部分地与导电性基板结合的区域。在密度调节中，分子膜的分子密度通过从导电性基材上解吸构成分子膜的一部分分子来调节。

8. 发明授权

US08445262B2 Method for evaluating analyte 有权
标题翻译：评估分析物的方法
公开(公告)号：US08445262B2
公开(公告)日：2013-05-21
申请号：US12239987
申请日：2008-09-29
申请人： Kenji Arinaga , Ulrich Rant , Simon Scherer , Erika Pringsheim
发明人： Kenji Arinaga , Ulrich Rant , Simon Scherer , Erika Pringsheim
IPC分类号： C12M1/34 , C12M3/00
CPC分类号： G01N21/6428 , G01N33/5438 , G01N2021/6432 , Y10T436/143333
摘要： In an analyte evaluation method for evaluating an analyte, AC voltage is applied between a substrate electrode on a substrate and a counter electrode, and signals obtained from a marker provided on an analyte bound to the substrate electrode are observed, wherein the frequency of the AC voltage is changed and the behavior of the average value of the marker signals is observed. A novel, highly-selective, low-noise method of evaluating a object of evaluation is thus achieved.
摘要翻译：在用于评价分析物的分析物评价方法中，在基板上的基板电极和对置电极之间施加AC电压，并且观察到从与基板电极结合的分析物上提供的标记获得的信号，其中AC的频率电压被改变，并且观察到标记信号的平均值的行为。从而实现了评价评价对象的新颖，高选择性，低噪声的方法。

9. 发明授权

US08309365B2 Method for evaluating target molecules 有权
标题翻译：靶分子评估方法
公开(公告)号：US08309365B2
公开(公告)日：2012-11-13
申请号：US12626729
申请日：2009-11-27
申请人： Kenji Arinaga , Ulrich Rant , Erika Pringsheim , Wolfgang Kaiser , Jelena Knezevic
发明人： Kenji Arinaga , Ulrich Rant , Erika Pringsheim , Wolfgang Kaiser , Jelena Knezevic
IPC分类号： G01N21/76 , G12Q1/00
CPC分类号： B82Y15/00 , G01N21/6428 , G01N27/3275 , G01N33/5438 , G01N2021/6432
摘要： A method for evaluating a target molecule bound to a probe molecule provided with a marker includes: applying AC voltage between a working electrode provided on a substrate and a counter electrode; and using a signal obtained from the marker on the probe molecule bound to the working electrode when a frequency of the AC voltage is varied, or an average value of the signal, to determine at least one of a Stokes radius or molecular weight of the target molecule, a binding rate between the probe molecule and the target molecule, a binding rate constant therebetween, a dissociation rate therebetween, and a dissociation rate constant therebetween.
摘要翻译：用于评价与设置有标记的探针分子结合的靶分子的方法包括：在设置在基板上的工作电极和对电极之间施加交流电压; 并且当交流电压的频率发生变化时，使用从标记获得的信号在与工作电极结合的探针分子上，或者信号的平均值，以确定目标的斯托克斯半径或分子量中的至少一个分子，探针分子和靶分子之间的结合速率，它们之间的结合速率常数，它们之间的解离速率和它们之间的解离速率常数。

10. 发明授权

US07311889B2 Carbon nanotubes, process for their production, and catalyst for production of carbon nanotubes 有权
标题翻译：碳纳米管，其制备方法和用于生产碳纳米管的催化剂
公开(公告)号：US07311889B2
公开(公告)日：2007-12-25
申请号：US10464847
申请日：2003-06-19
申请人： Yuji Awano , Yoshitaka Yamaguchi , Kenji Arinaga , Shozo Fujita
发明人： Yuji Awano , Yoshitaka Yamaguchi , Kenji Arinaga , Shozo Fujita
IPC分类号： D01F9/12
CPC分类号： D01F9/12 , B82Y30/00 , D01F9/127 , D01F9/1272 , D01F9/133 , Y10S977/843
摘要： The invention provides a process for production of carbon nanotubes whereby a laminate prepared by alternating lamination of a metal catalyst and a material other than the metal catalyst is cut to expose the laminated structure, and carbon nanotubes are grown on the metal catalyst at the cut surface of the laminate. The process results in high-quality carbon nanotubes, with minimized bundle growth, which are each individually and independently arranged in a highly precise manner at prescribed locations.The invention also provides a carbon nanotube production process comprising a step of preparing a substrate which is inclined in one or two dimensions from a specific highly symmetrical crystal orientation and vapor depositing a metal catalyst along the atomic steps appearing on the surface of the substrate, and a step of growing the carbon nanotubes by chemical vapor deposition (CVD) using the metal catalyst as nuclei. It is thus possible to control the growth locations, diameters, orientation and chirality of carbon nanotubes.
摘要翻译：本发明提供一种碳纳米管的制造方法，其中通过交替层压金属催化剂和除了金属催化剂之外的材料制成的层压体被切割以暴露层压结构，并且碳纳米管在切割表面上在金属催化剂上生长的层压板。该方法产生高质量的碳纳米管，其最小化束生长，它们在规定的位置上以高度精确的方式各自独立地排列。本发明还提供一种碳纳米管制造方法，其包括以下步骤：制备从特定的高度对称的晶体取向倾斜一维或二维的衬底，并沿着出现在衬底表面上的原子台阶气相沉积金属催化剂，以及通过使用金属催化剂作为核的化学气相沉积（CVD）来生长碳纳米管的步骤。因此可以控制碳纳米管的生长位置，直径，取向和手性。

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