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    • 1. 发明公开
    • 초전도체 물질의 접합 방법
    • 接合超导体材料的方法
    • KR1020130071336A
    • 2013-06-28
    • KR1020120075857
    • 2012-07-12
    • 인더스트리얼 테크놀로지 리서치 인스티튜트
    • 쿤-핑후앙치-첸창유-체시에치-웨이루오치-시앙수웬-옌쳉
    • H01L39/02
    • H01L39/02C04B37/001C04B2237/341C04B2237/50C04B2237/82H01L39/24
    • PURPOSE: A method of joining superconductor materials is provided to join a fist superconductor material and a second superconductor material by a microwave heating method, thereby preventing the problems that a joining interface resistance value would cause. CONSTITUTION: A microwave chamber(200) comprises a first heat absorption plate(210) and a second heat absorption plate(220) inside thereof. A first superconductor material and a second superconductor material are disposed between the first heat absorption plate and the second heat absorption plate. The first superconductor material and the second superconductor material have an overlapping region therebetween. Microwave power is supplied to the microwave chamber. The first heat absorption plate and the second heat absorption plate transform the microwave power into thermal energy so as to join the first superconductor material and the second superconductor material at the overlapping region.
    • 目的:提供一种接合超导体材料的方法,通过微波加热方法连接第一超导体材料和第二超导体材料,从而防止接合界面电阻值引起的问题。 构成:微波室(200)包括在其内部的第一吸热板(210)和第二吸热板(220)。 第一超导体材料和第二超导体材料设置在第一吸热板和第二吸热板之间。 第一超导体材料和第二超导体材料之间具有重叠区域。 微波功率供应到微波室。 第一吸热板和第二吸热板将微波功率转换为热能,以便在重叠区域处连接第一超导体材料和第二超导体材料。
    • 6. 发明公开
    • 표면글라스 용출법에 의한 알루미나 소성기판의 고온접합방법
    • 通过玻璃表面提取的烧结铝基材的高温结合方法
    • KR1020040060683A
    • 2004-07-06
    • KR1020030000181
    • 2002-12-30
    • (주)에이지광학
    • 김동식박금석
    • C04B37/00
    • C04B37/005C04B2237/50
    • PURPOSE: A high temperature bonding method of a sintered alumina substrate by adopting a glass surface extraction method is provided to prevent or reduce the conventional problems including decrease in strength, fume generation, occurrence of particles and a defective wafer caused by static electricity and magnetism, in a ceramic arm of a handler used in a semiconductor production. CONSTITUTION: A high temperature bonding method of three of sintered alumina substrates comprises the step of extracting the glass present in the surface of a sintered alumina substrate which comprises 94-96% of Al2O3 and 2-3% of SiO2, and has a thickness of 0.5-1.0 mm, at 1400-1700 deg.C with applying a certain load.
    • 目的:提供采用玻璃表面提取方法的氧化铝烧结烧结体的高温接合方法,以防止或降低由静电和磁性引起的强度,烟雾产生,颗粒的发生和缺陷晶片的常规问题, 在用于半导体生产的处理器的陶瓷臂中。 构成:三个烧结氧化铝衬底的高温接合方法包括提取包含94-96%的Al 2 O 3和2-3%的SiO 2的烧结氧化铝衬底的表面中存在的玻璃的步骤,并且具有 0.5-1.0毫米,1400-1700摄氏度,施加一定的载荷。