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1. 发明公开

KR1020150035498A 천이 액체상, 알루미늄 질화물 부품의 무가압 연결 审中-实审
标题翻译：瞬态液相，氮化铝组分的无压接合
公开(公告)号：KR1020150035498A
公开(公告)日：2015-04-06
申请号：KR1020147027394
申请日：2013-02-28
申请人： 오아시스 머티리얼 코포레이션
发明人： 해리스,조나단에이치 , 폴레스,프랑크제이. , 테쉬,로버트제이. , 누텐스,스테펜피. , 디네스쿠,소린 , 브레드버리,윌리엄엘. , 클로센,케이시씨.
IPC分类号： H01L21/683 , H01L21/687 , H01L21/67
CPC分类号： C04B37/005 , B32B18/00 , C04B35/581 , C04B35/62813 , C04B37/001 , C04B2235/3225 , C04B2235/3865 , C04B2235/5436 , C04B2235/6581 , C04B2235/6582 , C04B2235/6587 , C04B2235/668 , C04B2235/77 , C04B2235/85 , C04B2235/9607 , C04B2235/9615 , C04B2237/064 , C04B2237/066 , C04B2237/08 , C04B2237/366 , C04B2237/555 , C04B2237/568 , C04B2237/60 , C04B2237/68 , C04B2237/704 , C04B2237/765 , C04B2237/80 , C04B2237/84 , H01L21/67103 , H01L21/67109 , H01L21/67248 , H01L21/68785 , H01L21/68792 , H05K13/0023 , Y10T156/10 , Y10T403/479 , H01L21/683
摘要： 둘이상의알루미늄질화물("AIN") 세라믹부품의모놀리식, 전밀폐식연결또는결합이부품들사이의접촉영역부근의천이액체상소결을촉진함으로써이루어진다. 첫번째접근법에서, AIN 입자는연결페이스트에서이트륨산화물(YO)과같은희토류산화물소결화첨가제와조합되고, 부품들을서로용접하기위해최종연소하기전에연소된세라믹예비성형부품의연결표면사이에도포될수 있고, 두번째접근법에서, 첨가제는그린(green) 혼합물에부가되고, 상이한수축아스펙트비를가지는부품들이합쳐지고부분적압력의첨가제를함유하는대기에서동시소성된다. 첨가제는최종연소도중접촉영역내 세라믹계면입자의표면에존재하는액체상의습윤및 확산을촉진한다. 그러한공정은집적회로제작에서사용되는세라믹서셉터와같은복합세라믹구조를형성하기위해사용될수 있다. 부품은부품들사이의계면을통해전기적으로상호접속될수 있는다수의내장된금속배선전자트레이스를가질수 있다.

2. 发明公开

KR1020130031466A 테이프 캐스팅을 이용한 지지체식 코팅막의 제조방법 有权
标题翻译：基片支撑涂层的制作方法使用胶带薄膜
公开(公告)号：KR1020130031466A
公开(公告)日：2013-03-29
申请号：KR1020110095053
申请日：2011-09-21
申请人： 한국전력공사
发明人： 유영성 , 최미화 , 이태희
IPC分类号： B32B18/00 , C04B35/64 , H01M8/12 , H01M8/02
CPC分类号： B32B37/24 , B32B18/00 , C04B2235/6025 , C04B2235/768 , C04B2237/066 , C04B2237/068 , C04B2237/34 , C04B2237/341 , C04B2237/345 , C04B2237/348 , C04B2237/365 , C04B2237/368 , C04B2237/765 , C25B9/00 , C25B9/10 , C25B11/02 , C25B13/02 , H01M4/8657 , H01M4/8803 , H01M4/8857 , H01M4/8875 , H01M4/8889 , H01M8/0247 , H01M8/1226 , H01M8/124 , H01M2008/1293 , Y02P70/56
摘要： PURPOSE: A manufacturing method of a support type coating film is provided to easily manufacture a green film type sheet and to easily and simply form the same on a support by only one tap casting. CONSTITUTION: A manufacturing method of a support type coating film comprises a step of forming a support; a step of forming a green sheet for a coating film on a releasing film; a step of attaching a green sheet on the support; a step of removing the releasing film from a laminate which consists of a mold releasing film, green sheet, and a support; and a step of co-sintering the support and the laminate of the green sheet. The final thickness of the coating film is 0.1-900μm. The sintered density of the coating film is 30% or more. The support is a fuel electrode or air electrode. [Reference numerals] (AA) Start; (BB) First step: step of manufacturing a pre-sintered support substrate by molding and thermally treating powder for a support containing a binder; (CC) Second step: step of manufacturing a green sheet by tape-casting ceramics(electrolyte) slurry containing a binder; (DD) Third step: step of bonding by coating the ceramics sheet with an organic solvent and attaching the ceramics sheet on one side of the support; (EE) Fourth step: step of placing the support with the green sheet and removing a releasing film from the surface; (FF) Fifth step: step of homogenizing by aging the laminate of the support and the sheet in an electronic oven at room temperature or 400°C or less; (GG) Sixth step: step of forming a support type coating functional film(electrolyte or separating membrane) by finally simultaneously sintering and thermally treating the laminate; (HH) End
摘要翻译：目的：提供一种支撑型涂膜的制造方法，以容易地制造绿色薄膜型薄片，并且通过仅仅一个水龙头浇铸便于简单地在支撑体上形成。构成：支撑型涂膜的制造方法包括形成载体的步骤; 在剥离膜上形成涂膜用生片的工序; 将生片附着在支撑体上的步骤; 从由脱模膜，生片和支持体构成的层叠体除去脱模膜的工序; 以及将生片的支撑体和层叠体共烧结的工序。涂膜的最终厚度为0.1-900μm。涂膜的烧结密度为30％以上。支撑件是燃料电极或空气电极。（附图标记）（AA）开始; （BB）第一步骤：通过模制和热处理含有粘合剂的载体的粉末来制造预烧结的支撑基板的步骤; （CC）第二步：通过含有粘合剂的带状陶瓷（电解质）浆料制造生片的步骤; （DD）第三步骤：通过用有机溶剂涂覆陶瓷片并将陶瓷片粘附在载体的一侧上进行接合的步骤; （EE）第四步：将载体与生片放置并从表面除去脱模膜的步骤; （FF）第五步：在室温或400℃以下的电子烘箱中将载体和片材的层压体老化均匀化的步骤; （GG）第六步骤：通过最后同时烧结和热处理层压体形成载体型涂覆功能膜（电解质或分离膜）的步骤; （HH）结束

3. 发明授权

KR101204337B1 고온 본딩된 세라믹 상호 접속을 구비한 ＳＯＦＣ 스택 및 이를 제조하는 방법 有权
标题翻译：具有高温粘结陶瓷互连的SOFC堆叠及其制造方法
公开(公告)号：KR101204337B1
公开(公告)日：2012-11-26
申请号：KR1020087024149
申请日：2007-04-04
申请人： 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드
发明人： 도나휴,윌리암,2세 , 권,오훈 , 마호니,에프.,미첼 , 피트라스,죤,디.
IPC分类号： H01M8/24 , H01M8/12
CPC分类号： H01M8/2425 , C04B35/645 , C04B37/005 , C04B2237/06 , C04B2237/066 , C04B2237/068 , C04B2237/708 , H01M4/8885 , H01M4/9025 , H01M4/9066 , H01M8/0219 , H01M8/0236 , H01M8/0241 , H01M8/0297 , H01M8/1253 , H01M8/2404 , H01M2008/1293 , Y02E60/525 , Y02P70/56
摘要： 본 발명은 캐소드층, 상기 캐소드층상에 놓인 전해질층, 및 상기 전해질층상에 놓인 애노드층을 구비하는 제 1 전지를 포함하는 일체형 SOFC 스택에 관한 것이다. SOFC 스택은 또한 캐소드층, 상기 캐소드층상에 놓인 전해질층, 및 상기 전해질층상에 놓인 애노드를 구비하는 제 2 전지를 포함한다. SOFC 스택은 상기 제 1 전지와 상기 제 2 전지 사이에 세라믹 상호 접속층을 추가로 포함하고, 상기 세라믹 상호 접속층은 상기 제 1 전지와 상기 세라믹 상호 접속층간에 계면 영역을 따라 제 1 고온 본딩 영역, 및 상기 제 2 전지와 상기 세라믹 상호 접속층간에 계면 영역을 따라 제 2 고온 본딩 영역을 갖는다.
캐소드층, 전해질층, 애노드층, 제 1 전지, 제 2 전지, SOFC 스택, 상호 접속층

4. 发明授权

KR100420456B1 반도체 제조 장치용 웨이퍼 지지체와 그 제조 방법 및반도체 제조 장치 有权
标题翻译： 반도체제조장치용웨이퍼지지체와그제조방법및반도체제조장치
公开(公告)号：KR100420456B1
公开(公告)日：2004-03-02
申请号：KR1020010003124
申请日：2001-01-19
申请人： 스미토모덴키고교가부시키가이샤
发明人： 구이비라아끼라 , 나까따히로히꼬
IPC分类号： H01L21/68
CPC分类号： H01L21/6835 , C04B37/005 , C04B41/009 , C04B41/52 , C04B41/89 , C04B2237/06 , C04B2237/062 , C04B2237/064 , C04B2237/066 , C04B2237/08 , C04B2237/10 , C04B2237/122 , C04B2237/123 , C04B2237/125 , C04B2237/343 , C04B2237/366 , C04B2237/368 , C04B2237/52 , C04B2237/567 , C04B2237/62 , C04B2237/66 , C04B2237/704 , C04B2237/708 , C04B2237/72 , C04B2237/80 , H01L21/4857 , H01L21/67103 , C04B41/0072 , C04B41/4539 , C04B41/4572 , C04B41/5133 , C04B41/5022 , C04B35/581
摘要： A wafer holder for a semiconductor manufacturing apparatus that has a high heat conductivity and includes a conductive layer such as heater circuit pattern which can be formed with a high precision pattern, a method of manufacturing the wafer holder, and a semiconductor manufacturing apparatus having therein the wafer holder are provided. On a surface of a sintered aluminum nitride piece (10a), paste containing metal particles is applied and fired to form a heater circuit pattern (11) as a conductive layer. Between the surface of the sintered aluminum nitride piece (10a) having the heater circuit pattern (11) formed thereon and another sintered aluminum nitride piece (10b), a glass layer (14) is provided as a joint layer to be heated for joining the sintered aluminum nitride pieces (10a and 10b) together.
摘要翻译：本发明提供一种半导体制造装置用晶片保持架及其制造方法，该半导体制造装置具有高导热性，并且具有能够以高精度的图案形成的加热器电路图案等导电层，晶片支架。在氮化铝烧结体片（10a）的表面上涂布含有金属粒子的糊剂并烧成，形成作为导电层的加热器电路图案（11）。在形成有加热器电路图案（11）的烧结氮化铝片（10a）的表面和另一烧结氮化铝片（10b）之间设置玻璃层（14）作为接合层，以便加热以接合将氮化铝烧结片（10a和10b）一起烧结。＆lt;图像＆GT; ＆lt;图像＆GT;

5. 发明公开

KR1020090127910A 세라믹 미립자를 갖는 금속-세라믹 복합물 에어 브레이즈 无效
标题翻译：具陶瓷颗粒的金属 - 陶瓷复合空气布
公开(公告)号：KR1020090127910A
公开(公告)日：2009-12-14
申请号：KR1020097020763
申请日：2008-03-05
申请人： 바텔리 메모리얼 인스티튜트
发明人： 김,진,영 , 웨일,케네스,스캇 , 최,정-평
IPC分类号： B23K35/22 , B23K35/32 , C04B37/00 , C04B37/02
CPC分类号： B23K35/322 , B23K35/22 , C04B37/003 , C04B37/023 , C04B2237/04 , C04B2237/064 , C04B2237/066 , C04B2237/068 , C04B2237/124 , C04B2237/125 , C04B2237/343 , Y10T428/12667
摘要： A method for joining together two or more ceramic and/or metal parts by providing a braze consisting of a mixture of copper oxide, silver, and ceramic particulate. The braze is placed upon the surfaces of the parts, which are then held together for sufficient time and at a sufficient temperature to cause the braze to form a bond between the parts. The addition of the ceramic particulate increases the viscosity of the braze, decreasing squeeze out, decreasing the formation of air pockets, decreases the formation of brittle phases by providing nucleation sites and increases the flexural strength of the joint.
摘要翻译：一种通过提供由铜氧化物，银和陶瓷颗粒的混合物组成的钎焊将两个或多个陶瓷和/或金属部件接合在一起的方法。钎焊被放置在部件的表面上，然后将它们保持在一起足够的时间并且在足够的温度下使钎焊在部件之间形成粘合。添加陶瓷颗粒会增加钎焊的粘度，减少挤出，减少气泡的形成，通过提供成核位置减少脆性相的形成并增加接头的弯曲强度。

6. 发明授权

KR100415560B1 유전체 자기 조성물과 이를 이용한 자기 커패시터 및 그 제조방법 失效
标题翻译： 유전체자기조성물과이를이용한자기커패시터및그제조방
公开(公告)号：KR100415560B1
公开(公告)日：2004-01-24
申请号：KR1020010016265
申请日：2001-03-28
申请人： 삼성전기주식회사
发明人： 김종희 , 후지노시게히로 , 히라이노부타케
IPC分类号： C04B35/49 , H01B3/12 , H01G4/12
CPC分类号： C03C14/00 , B32B18/00 , C04B35/47 , C04B2235/6562 , C04B2237/066 , C04B2237/068 , C04B2237/341 , C04B2237/343 , C04B2237/345 , C04B2237/346 , C04B2237/348 , C04B2237/565 , C04B2237/68
摘要： The present invention provides a dielectric ceramic composition, a capacitor using the composition and the producing method, of having a lower dielectric loss and a stable characteristics in high frequency bandwidth, and enabling to use a base metal or a carbon-based material as an electrode material by allowing sintering at a low temperate, thereby resulting in lower cost. The dielectric ceramic composition according to present invention, is characterized in comprising a main component of formula SrxBa1-x(ZryTi1-y) O3 (where 0.8
摘要翻译：本发明提供介电陶瓷组合物，使用该组合物和制造方法的电容器，其具有较低的介电损耗和高频带宽的稳定特性，并且能够使用基底金属或碳基材料作为电极材料通过允许在低温度下烧结，从而导致成本较低。根据本发明的介电陶瓷组合物的特征在于包含式Sr x Ba 1-x（ZryTi 1-y）O 3（其中0.8≤x≤1;0.9≤y≤1）的主成分，MnO 2 0.05-15重量％的选自Bi 2 O 3 PbO和Sb 2 O 3的0.001-5重量％中的至少一种和0.5-15重量％的玻璃组分中的至少一种。

7. 发明授权

KR100415559B1 유전체 자기 조성물과 이를 이용한 자기 커패시터 및 그 제조방법 失效
标题翻译： 유전체자기조성물과이를이용한자기커패시터및그제조방
公开(公告)号：KR100415559B1
公开(公告)日：2004-01-24
申请号：KR1020010016264
申请日：2001-03-28
申请人： 삼성전기주식회사
发明人： 김종희 , 후지노시게히로 , 히라이노부타케
IPC分类号： C04B35/48 , C04B35/49 , H01B3/12 , H01G4/12
CPC分类号： C04B35/49 , B32B18/00 , C04B2235/6562 , C04B2237/066 , C04B2237/068 , C04B2237/341 , C04B2237/343 , C04B2237/345 , C04B2237/346 , C04B2237/348 , C04B2237/565 , C04B2237/68
摘要： The dielectric ceramic composition according to present invention, is characterized in comprising a component of formula SrxCa1-x(ZryTi1-y)03 (where 0.7
摘要翻译：根据本发明的介电陶瓷组合物的特征在于包含式Sr x Ca 1-x（ZryTi 1-y）O 3（其中0.7≤x≤1;0.9≤y≤1）的组分，其中MnO 2 0.05-20重量％，基于主要组分的重量，添加选自由Bi 2 O 3，PbO和Sb 2 O 3组成的连接体的0.001-5重量％中的至少一种和0.5-10重量％的玻璃组分。

8. 发明公开

KR1020010007445A 초합금 제품, 코팅된 초합금 부품 및 제품 형성 방법 失效
标题翻译：陶瓷超级文章
公开(公告)号：KR1020010007445A
公开(公告)日：2001-01-26
申请号：KR1020000033856
申请日：2000-06-20
申请人： 제너럴 일렉트릭 캄파니
发明人： 맥키더글라스윌리엄
IPC分类号： C23C16/00
CPC分类号： C23C28/34 , C04B37/023 , C04B37/025 , C04B2237/062 , C04B2237/064 , C04B2237/066 , C04B2237/068 , C04B2237/121 , C04B2237/123 , C04B2237/365 , C04B2237/368 , C04B2237/38 , C04B2237/403 , C04B2237/405 , C04B2237/406 , C04B2237/52 , C04B2237/567 , C04B2237/60 , C04B2237/61 , C04B2237/708 , C04B2237/72 , C04B2237/76 , C23C28/321 , C23C28/3215 , C23C28/345 , C23C28/3455 , Y10T428/12549 , Y10T428/12618 , Y10T428/12931 , Y10T428/12944
摘要： PURPOSE: To improve a diffusion barrier layer provided on the space between a substrate made of a superalloy and a silicon base ceramic material. CONSTITUTION: The article contains a substrate made of a superalloy, a silicon base ceramic material and a thermally stable silicon diffusion barrier layer. The thermally stable diffusion barrier layer is interposed on the space between the substrate and the ceramic material and prevents the diffusion of silicon or carbon into the substrate. The diffusion barrier film is thermally stable and also prevents the diffusion of silicon or carbon through the boundary face between the ceramic material and the superalloy. In the method for producing the article, a superalloy substrate is formed, a thermally stable diffusion barrier layer is applied on the substrate, and moreover, a silicon base ceramic material is carried on the substrate coated with the barrier layer. This diffusion barrier layer substantially prevents the diffusion of silicon from the ceramic material into the superalloy substrate.
摘要翻译：目的：改善在由超级合金制成的基板和硅基陶瓷材料之间的空间上提供的扩散阻挡层。构成：该物品含有由超合金，硅基陶瓷材料和热稳定的硅扩散阻挡层制成的基底。热稳定的扩散阻挡层插入在基板和陶瓷材料之间的空间上，并且防止硅或碳扩散到基板中。扩散阻挡膜是热稳定的，并且还防止硅或碳通过陶瓷材料和超级合金之间的边界面的扩散。在制品的制造方法中，形成超合金基板，在基板上涂布热稳定的扩散阻挡层，此外，在涂布有阻挡层的基板上载持硅基陶瓷材料。该扩散阻挡层基本上防止硅从陶瓷材料扩散到超合金基底中。

9. 发明公开

KR1020150109293A 전압 비선형 저항 소자 및 그 제조 방법 审中-实审
标题翻译：电压非线性电阻元件及其制造方法
公开(公告)号：KR1020150109293A
公开(公告)日：2015-10-01
申请号：KR1020150038098
申请日：2015-03-19
申请人： 엔지케이 인슐레이터 엘티디
发明人： 야마자키사토시 , 하야세토루 , 모리모토겐지 , 가와사키신지 , 다케우치유키히사
IPC分类号： H01C7/10 , H01C17/06
CPC分类号： H01C7/112 , C04B35/453 , C04B35/62695 , C04B37/003 , C04B37/005 , C04B37/006 , C04B2235/3217 , C04B2235/322 , C04B2235/3284 , C04B2235/3286 , C04B2235/443 , C04B2235/5436 , C04B2235/5454 , C04B2235/658 , C04B2235/96 , C04B2237/06 , C04B2237/066 , C04B2237/125 , C04B2237/126 , C04B2237/34 , C04B2237/708 , C04B2237/72 , H01C7/10 , H01C7/1006 , H01C7/102 , H01C7/12 , H01C7/18 , H01C17/00 , Y10T29/49082 , H01C17/06
摘要： 산화아연계의전압비선형저항소자에있어서, 고전류영역에있어서의제한전압을낮게억제한다. 전압비선형저항소자(10)는, 산화아연을주성분으로하며체적저항률이 1.0×10Ω㎝보다작은산화아연세라믹층(12a)과희토류금속산화물을주성분으로하는희토류금속산화물층(12b)이접합된접합체(12)를 1개갖는저항체(14)와, 산화아연세라믹층(12a)과희토류금속산화물층(12b)의접합면을도전경로가가로지르도록저항체(14)에형성된한쌍의전극(16, 18)을구비한것이다. 이소자(10)에서는, 접합체(12)의산화아연세라믹층(12a)으로서, 종래에비해서체적저항률이낮은것을사용하고있다. 그때문에, 고전류영역에있어서의제한전압을종래에비해서낮게억제할수 있다.
摘要翻译：在氧化锌的电压非线性电阻元件中，在高电流区域中低压抑制了钳位电压。电压非线性电阻元件（10）包括电阻器（14），其包括一个层叠体（12），其中主要由氧化锌组成的体积电阻率低于1.0×10 -3的氧化锌陶瓷层（12a）主要由稀土金属氧化物构成的稀土类金属氧化物层（12b）与电阻体（14）之间形成导电路径的一对电极（16,18）氧化锌陶瓷层（12a）和稀土金属氧化物层（12b）的表面。在元件（10）中，由于与现有元件相比，使用具有低体积电阻率的层压体（12）的氧化锌陶瓷层（12a），因此在高电流区域中低压抑制电压。

10. 发明公开

KR1020090017474A 고온 본딩된 세라믹 상호 접속을 구비한 ＳＯＦＣ 스택 및 이를 제조하는 방법 有权
标题翻译：具有高温粘结陶瓷互连的SOFC堆叠及其制造方法
公开(公告)号：KR1020090017474A
公开(公告)日：2009-02-18
申请号：KR1020087024149
申请日：2007-04-04
申请人： 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드
发明人： 도나휴,윌리암,2세 , 권,오훈 , 마호니,에프.,미첼 , 피트라스,죤,디.
IPC分类号： H01M8/24 , H01M8/12
CPC分类号： H01M8/2425 , C04B35/645 , C04B37/005 , C04B2237/06 , C04B2237/066 , C04B2237/068 , C04B2237/708 , H01M4/8885 , H01M4/9025 , H01M4/9066 , H01M8/0219 , H01M8/0236 , H01M8/0241 , H01M8/0297 , H01M8/1253 , H01M8/2404 , H01M2008/1293 , Y02E60/525 , Y02P70/56
摘要： The present disclosure is directed to an integrated SOFC stack including, a first cell having a cathode layer, an electrolyte layer overlying the cathode layer, and an anode layer overlying the electrolyte layer. The SOFC stack also includes a second cell having a cathode layer, an electrolyte layer overlying the cathode layer, and an anode overlying the electrolyte layer. The SOFC stack further includes a ceramic interconnect layer between the first cell and the second cell, the ceramic interconnect layer having a first high temperature bonding region along the interfacial region between the first cell and the ceramic interconnect layer. The ceramic interconnect layer also includes a second high temperature bonding region along the interfacial region between the second cell and the ceramic interconnect layer.
摘要翻译：本公开涉及一种集成SOFC堆叠，其包括具有阴极层的第一单元，覆盖阴极层的电解质层和覆盖在电解质层上的阳极层。 SOFC堆叠还包括具有阴极层的第二单元，覆盖阴极层的电解质层和覆盖电解质层的阳极。 SOFC堆叠还包括在第一单元和第二单元之间的陶瓷互连层，陶瓷互连层具有沿着第一单元和陶瓷互连层之间的界面区域的第一高温接合区域。陶瓷互连层还包括沿着第二电池和陶瓷互连层之间的界面区域的第二高温接合区域。

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