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1. 发明授权

KR102227770B1 나노구조 반도체 발광소자 有权
公开(公告)号：KR102227770B1
公开(公告)日：2021-03-16
申请号：KR1020140114199
申请日：2014-08-29
申请人： 삼성전자주식회사
发明人： 차남구 , 이진복 , 이동국 , 조동현 , 최민욱
IPC分类号： H01L33/20
摘要： 본발명은제1 영역과제2 영역을가지며제1 도전형반도체층으로이루어진베이스층; 상기베이스층의상면에배치되며, 제1 도전형반도체로이루어진복수의나노코어, 상기복수의나노코어상에순차적으로배치된활성층및 제2 도전형반도체층을갖는복수의나노발광구조물; 상기제2 도전형반도체층에전기적으로접속되도록상기복수의나노발광구조물의표면에배치된콘택전극; 상기베이스층과전기적으로접속된제1 전극; 및상기제2 영역에배치된복수의나노발광구조물중 적어도일부의나노발광구조물의표면에배치된상기콘택전극을덮도록배치되는제2 전극을포함하며, 상기복수의나노발광구조물중 상기제2 영역에배치된나노발광구조물은상기제1 영역에배치된나노발광구조물과상이한형상을가진나노구조반도체발광소자를제공한다.

2. 发明公开

KR1020120024489A 반도체 발광다이오드 칩, 발광장치 및 그 제조방법 无效
标题翻译：半导体发光二极管芯片，发光器件及其制造方法
公开(公告)号：KR1020120024489A
公开(公告)日：2012-03-14
申请号：KR1020110088613
申请日：2011-09-01
申请人： 삼성전자주식회사
发明人： 채승완 , 김태훈 , 이수열 , 이진복 , 김진환 , 이승재 , 김보경 , 이종호
IPC分类号： H01L33/46 , H01L33/60 , H01L33/10
CPC分类号： H01L33/46 , H01L24/32 , H01L2224/48091 , H01L2224/49107 , H01L2224/73265 , H01L2924/01322 , H01L2924/12041 , H01L2924/12042 , H01L2924/15788 , H01L2924/00014 , H01L2924/00
摘要： PURPOSE: A semiconductor light emitting diode chip, a light emitting device, and a manufacturing method thereof are provided to increase substantial brightness to a desired direction by obtaining high reflective efficiency by combining a metal reflective layer and an optic sublayer. CONSTITUTION: A light emitting diode structure(40) is formed on a substrate(41). The light emitting diode structure comprises an n-type semiconductor layer(42), an active layer(45), and a p-type semiconductor layer(46). An n-side electrode(49a) is formed on the n-type semiconductor layer. A transparent electrode layer(47) and a p-side electrode(49b) are successively formed on the p-type semiconductor layer. A lamination element(BR) for rear side reflection includes an optic sublayer(53) and a metal reflective layer(55).
摘要翻译：目的：提供一种半导体发光二极管芯片，发光器件及其制造方法，通过组合金属反射层和光学子层获得高反射效率，将实质亮度增加到期望的方向。构成：在基板（41）上形成发光二极管结构（40）。发光二极管结构包括n型半导体层（42），有源层（45）和p型半导体层（46）。在n型半导体层上形成n侧电极（49a）。在p型半导体层上依次形成透明电极层（47）和p侧电极（49b）。用于后侧反射的层压元件（BR）包括光学子层（53）和金属反射层（55）。

3. 发明公开

KR1020110098874A 멀티셀 어레이를 갖는 반도체 발광장치, 발광모듈 및 조명장치 有权
标题翻译：具有多细胞阵列，发光模块和照明装置的半导体发光器件
公开(公告)号：KR1020110098874A
公开(公告)日：2011-09-02
申请号：KR1020100018277
申请日：2010-02-27
申请人： 삼성전자주식회사
发明人： 이수열 , 김용태 , 이진복 , 김기범
IPC分类号： H01L33/48 , H01L33/62
CPC分类号： H01L27/156 , H01L24/24 , H01L27/153 , H01L33/30 , H01L33/62 , H01L2224/48091 , H01L2924/12041 , H01L2924/12042 , H01L33/48 , H01L2924/00014 , H01L2924/00
摘要： 본 발명의 일 관점은, 기판과, 상기 기판 상면에 위치하며, 각각 상기 기판 상면에 순차적으로 형성된 제1 도전형 반도체층, 활성층 및 제2 도전형 반도체층을 갖는 복수의 발광셀 - 상기 복수의 발광셀 사이의 영역은 적어도 활성층까지 제거된 분리영역으로 정의됨 - ;과, 상기 복수의 발광셀이 병렬 연결 또는 직렬 및 병렬이 조합된 연결을 갖도록 상기 발광셀이 형성된 기판 상에 형성된 복수의 연결부와, 상기 복수의 연결부와 상기 LED 셀의 원하지 않는 접속이 방지되도록 상기 LED 셀의 표면에 형성된 절연층;을 포함하며, 상기 복수의 발광셀은 적어도 하나의 불량 발광셀을 포함하며, 상기 불량 발광셀에 관련된 연결부 중 적어도 하나가 단절된 것을 특징으로 하는 반도체 발광장치를 제공한다.
본 발명의 다른 관점은, 불량 발광셀에 관련된 연결부를 제거할 때에 함께 소모되는 정상 발광셀의 수를 감소시킬 수 있는 다양한 방안을 제공한다. 본 발명의 또 다른 관점에 따르면, 발광셀간의 새로운 연결방안도 제공된다.

4. 发明公开

KR1020110087796A 반도체 발광소자 无效
标题翻译：半导体发光器件
公开(公告)号：KR1020110087796A
公开(公告)日：2011-08-03
申请号：KR1020100007392
申请日：2010-01-27
申请人： 삼성전자주식회사
发明人： 최번재 , 황해연 , 조명수 , 이진복
IPC分类号： H01L33/62 , H01L33/48
CPC分类号： H01L33/62 , H01L33/22 , H01L33/382
摘要： PURPOSE: A semiconductor light emitting device is provided to improve the light extraction efficiency and to drive in the AC power source by optimizing an electrode arranging structure. CONSTITUTION: A plurality of light emitting structures is arranged on a substrate and comprises a first electrical conduction semiconductor layer(103), an active layer(102), a second electrical conduction semiconductor layer(101), and a first and a second electrical connection parts(104,107) which are respectively connected with the first electrical conduction semiconductor layer and the second electrical conduction semiconductor layer. The plurality of light emitting structures is each other electrically connected in order to be driven with the AC power source applied from outside. The first electrical conduction semiconductor layer, the active layer, the second electrical conduction semiconductor layer are formed on the first electrical connection part. The second electrical connection part penetrates the first electrical connection part and the first electrical conduction semiconductor layer and connects with the second electrical conduction semiconductor layer. The second electrical connection part is electrically separated with the first electrical connection part, the first electrical conduction semiconductor layer, and the active layer.
摘要翻译：目的：提供一种半导体发光器件，以通过优化电极布置结构来提高光提取效率和驱动AC电源。构成：多个发光结构被布置在衬底上，并且包括第一导电半导体层（103），有源层（102），第二导电半导体层（101）和第一和第二电连接分别与第一导电半导体层和第二导电半导体层连接的部分（104,107）。多个发光结构彼此电连接，以便从外部施加的AC电源驱动。第一导电半导体层，有源层，第二导电半导体层形成在第一电连接部上。第二电连接部分穿透第一电连接部分和第一导电半导体层并与第二导电半导体层连接。第二电连接部分与第一电连接部分，第一导电半导体层和有源层电隔离。

5. 发明公开

KR1020100054756A 반도체 발광소자 有权
标题翻译：半导体发光器件
公开(公告)号：KR1020100054756A
公开(公告)日：2010-05-25
申请号：KR1020090110307
申请日：2009-11-16
申请人： 삼성전자주식회사
发明人： 최번재 , 이상범 , 이진복 , 김유승 , 송상엽
IPC分类号： H01L33/22
CPC分类号： H01L25/13 , H01L25/0753 , H01L33/002 , H01L33/0025 , H01L33/0029 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/387 , H01L33/40 , H01L33/44 , H01L33/486 , H01L33/502 , H01L33/504 , H01L33/507 , H01L33/508 , H01L33/54 , H01L33/56 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/49175 , H01L2224/8592 , H01L2924/0002 , H01L2924/1461 , H01L2924/181 , H01L2924/3025 , H01L2933/0041 , H05B33/0803 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PURPOSE: A semiconductor light emitting device is provided to improve external light extraction efficiency by positioning a first fluorescent layer containing a fluorescent substance emitting red light near a UV light emitting diode chip. CONSTITUTION: A first conductive semiconductor layer, an active layer(160), and a second conductive semiconductor layer are successively formed on a conductive substrate(110). A conductive via passes through the first conductive semiconductor layer and the active layer and is connected to the second conductive semiconductor layer. An electrical connection unit is extended from the conductive via and is exposed to the outside of the light emitting structure. An insulator separates a second conductive electrode from the conductive substrate, the first conductive semiconductor layer, and the active layer. A passivation layer covers the side of the active layer in the light emitting structure.
摘要翻译：目的：提供一种半导体发光器件，通过将包含发射红光的荧光物质的第一荧光层定位在UV发光二极管芯片附近来提高外部光提取效率。构成：在导电基板（110）上依次形成第一导电半导体层，有源层（160）和第二导电半导体层。导电通孔穿过第一导电半导体层和有源层并连接到第二导电半导体层。电连接单元从导电通孔延伸并暴露于发光结构的外部。绝缘体将第二导电电极与导电基板，第一导电半导体层和有源层分开。钝化层覆盖发光结构中的有源层的侧面。

6. 发明公开

KR1020160027431A 나노구조 반도체 발광소자 审中-实审
标题翻译：纳米扫描半导体发光器件
公开(公告)号：KR1020160027431A
公开(公告)日：2016-03-10
申请号：KR1020140114199
申请日：2014-08-29
申请人： 삼성전자주식회사
发明人： 차남구 , 이진복 , 이동국 , 조동현 , 최민욱
IPC分类号： H01L33/20
CPC分类号： H01L33/24 , H01L33/0075 , H01L33/08 , H01L33/38 , H01L2224/48091 , H01L2224/48237 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/181 , H01L2933/0016 , H01L2933/0025 , H01L2924/00014 , H01L2924/00012
摘要： 본발명은제1 영역과제2 영역을가지며제1 도전형반도체층으로이루어진베이스층; 상기베이스층의상면에배치되며, 제1 도전형반도체로이루어진복수의나노코어, 상기복수의나노코어상에순차적으로배치된활성층및 제2 도전형반도체층을갖는복수의나노발광구조물; 상기제2 도전형반도체층에전기적으로접속되도록상기복수의나노발광구조물의표면에배치된콘택전극; 상기베이스층과전기적으로접속된제1 전극; 및상기제2 영역에배치된복수의나노발광구조물중 적어도일부의나노발광구조물의표면에배치된상기콘택전극을덮도록배치되는제2 전극을포함하며, 상기복수의나노발광구조물중 상기제2 영역에배치된나노발광구조물은상기제1 영역에배치된나노발광구조물과상이한형상을가진나노구조반도체발광소자를제공한다.
摘要翻译：本发明提供了一种纳米结构半导体发光器件，其包括：具有第一区域和第二区域并由第一导电型半导体层形成的基极层; 多个纳米发光结构，其设置在基底层的上表面上，并且具有由第一导电型半导体形成的多个纳米芯，依次设置在纳米芯上的有源层，以及第二导电型半导体层 ; 接触电极，其设置在与第二导电型半导体层电连接的纳米发光结构的表面上; 电连接到所述基底层的第一电极; 以及第二电极，其设置成覆盖设置在设置在第二区域中的纳米发光结构的至少一部分的表面上的接触电极，其中设置在纳米发光结构中的第二区域中的纳米发光结构具有形状与设置在第一区域中的纳米发光结构的形状不同。

7. 发明公开

KR1020120046028A 반도체 발광소자 无效
标题翻译：半导体发光器件
公开(公告)号：KR1020120046028A
公开(公告)日：2012-05-09
申请号：KR1020110109268
申请日：2011-10-25
申请人： 삼성전자주식회사
发明人： 황석민 , 김재윤 , 이진복
IPC分类号： H01L33/38
CPC分类号： H01L33/382 , H01L33/42
摘要： PURPOSE: A semiconductor light emitting device is provided to improve light extraction efficiency by minimizing a current concentration phenomenon. CONSTITUTION: An active layer is arranged between a first conductivity type semiconductor layer(102) and a second conductivity type semiconductor layer. A first electrode and a second electrode are respectively arranged on the first and second conductivity type semiconductor layers. The first electrode or the second electrode includes a pad part and a finger part(106b,107b) which is extended from a pad part. The finger has a ring shape.
摘要翻译：目的：提供一种半导体发光器件，通过最小化电流集中现象来提高光提取效率。构成：有源层布置在第一导电类型半导体层（102）和第二导电类型半导体层之间。第一电极和第二电极分别布置在第一和第二导电类型半导体层上。第一电极或第二电极包括从焊盘部分延伸的焊盘部分和指状部分（106b，107b）。手指具有环形。

8. 发明公开

KR1020110139909A 질화물 반도체 발광소자의 제조방법 및 이에 의해 제조된 질화물 반도체 발광소자 无效
标题翻译：氮化物半导体发光器件及其形成的氮化物半导体发光器件的制造方法
公开(公告)号：KR1020110139909A
公开(公告)日：2011-12-30
申请号：KR1020100060016
申请日：2010-06-24
申请人： 삼성전자주식회사
发明人： 황석민 , 이진복 , 장태성 , 우종균
IPC分类号： H01L33/38 , H01L33/40 , H01L33/44 , H01L33/00
CPC分类号： H01L33/38 , H01L33/0079 , H01L33/382 , H01L33/40 , H01L33/44 , H01L2933/0016
摘要： PURPOSE: A manufacturing method of a nitride semiconductor light emitting device and the nitride semiconductor light emitting device formed by the same are provided to deposit a reflection metal layer and a barrier metal layer in the p-type semiconductor layer at the same time through one photoresist process. CONSTITUTION: In a manufacturing method of a nitride semiconductor light emitting device and the nitride semiconductor light emitting device formed by the same, a light emitting structure is formed on a substrate(110). The light emitting structure comprises first and second conductive nitride semiconductor layer and an active layer. The active layer is interposed between the first and second conductive nitride semiconductor layer. A first conductive nitride semiconductor layer(120), an active layer(130), and a second conductive nitride semiconductor layer(140) are formed in the top of the substrate. The first electrode is connected to the first conductive nitride semiconductor layer. A photoresist film(150) is formed on the second conductive nitride semiconductor layer. A reflective metal layer(161) and a barrier metal layer(162) are formed on the second conductive nitride semiconductor layer. The photoresist film is removed.
摘要翻译：目的：提供一种氮化物半导体发光器件和由其形成的氮化物半导体发光器件的制造方法，以通过一个光致抗蚀剂同时在p型半导体层中沉积反射金属层和阻挡金属层处理。构成：在氮化物半导体发光器件的制造方法和由其形成的氮化物半导体发光器件的制造方法中，在衬底（110）上形成发光结构。发光结构包括第一和第二导电氮化物半导体层和有源层。有源层介于第一和第二导电氮化物半导体层之间。第一导电氮化物半导体层（120），有源层（130）和第二导电氮化物半导体层（140）形成在衬底的顶部。第一电极连接到第一导电氮化物半导体层。在第二导电氮化物半导体层上形成光致抗蚀剂膜（150）。反射金属层（161）和阻挡金属层（162）形成在第二导电氮化物半导体层上。除去光致抗蚀剂膜。

9. 发明公开

KR1020110069374A 반도체 발광소자 无效
标题翻译：半导体发光器件
公开(公告)号：KR1020110069374A
公开(公告)日：2011-06-23
申请号：KR1020090126083
申请日：2009-12-17
申请人： 삼성전자주식회사
发明人： 이진복 , 이수열 , 김용태 , 황석민 , 채승완 , 이종호
IPC分类号： H01L33/38
CPC分类号： H01L33/382 , H01L33/20 , H01L33/42
摘要： PURPOSE: A semiconductor light emitting device is provided to improve brightness by reducing an electric path and to reduce a light loss by vertically arranging an n electrode and a p electrode. CONSTITUTION: An active layer(102) and a second conductive semiconductor layer(103) are successively formed on a first region of a first conductive semiconductor layer(101). An n electrode(104) is formed on a second region except for the first region of the first conductive semiconductor layer. An insulator(105) is formed to expose a part of the n electrode to the outside. A transparent electrode layer(106) is electrically connected to the second conductive semiconductor layer. A p electrode(107) is formed on the transparent electrode layer.
摘要翻译：目的：提供一种半导体发光器件，通过减少电路来提高亮度，并通过垂直排列n电极和p电极来减少光损失。构成：在第一导电半导体层（101）的第一区域上依次形成有源层（102）和第二导电半导体层（103）。在除了第一导电半导体层的第一区域之外的第二区域上形成n电极（104）。形成绝缘体（105）以将n电极的一部分暴露于外部。透明电极层（106）与第二导电半导体层电连接。在透明电极层上形成p电极（107）。

10. 发明公开

KR1020100044726A 반도체 발광 소자 有权
标题翻译：半导体发光器件
公开(公告)号：KR1020100044726A
公开(公告)日：2010-04-30
申请号：KR1020090100912
申请日：2009-10-22
申请人： 삼성전자주식회사
发明人： 최번재 , 김유승 , 이진복
IPC分类号： H01L33/22 , H01L33/36
CPC分类号： H01L33/0075 , H01L33/0079 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/38 , H01L33/382 , H01L33/40 , H01L33/405 , H01L33/42 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2933/0016
摘要： PURPOSE: A semiconductor light emitting device is provided to maximize a light emitting area by forming a part of an electrode on a light emitting surface and arranging the remained part of the electrode on the lower side of an active layer. CONSTITUTION: A conductive substrate(110), a first electrode layer(120), an insulation layer(130), a second electrode layer(140), a second semiconductor layer(150), an active layer(160) and a first semiconductor layer are successively stacked. A part of the surface of the interface between the second electrode layer and the second semiconductor layer is exposed. The first electrode layer passes through the second electrode layer, the second semiconductor layer and the active layer. The first electrode layer is connected to the first semiconductor layer through contact holes(180).
摘要翻译：目的：提供一种半导体发光器件，用于通过在发光表面上形成电极的一部分来使发光面积最大化，并将电极的剩余部分布置在有源层的下侧。构造：导电基板（110），第一电极层（120），绝缘层（130），第二电极层（140），第二半导体层（150），有源层（160）和第一半导体层依次层叠。第二电极层和第二半导体层之间的界面的一部分露出。第一电极层穿过第二电极层，第二半导体层和有源层。第一电极层通过接触孔（180）连接到第一半导体层。

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