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1. 发明授权

KR102099881B1 반도체 소자 및 그 제조 방법 有权
公开(公告)号：KR102099881B1
公开(公告)日：2020-05-15
申请号：KR1020130105691
申请日：2013-09-03
申请人： 삼성전자주식회사
发明人： 이동수 , 이명재 , 조성호 , 우딘모하메드라킵 , 서형석 , 양문승 , 이상문 , 이성훈 , 허지현 , 황의철
IPC分类号： H01L31/04 , H01L31/0256 , H01L31/18

2. 发明授权

KR101744757B1 가변 저항 소자, 상기 가변 저항 소자를 포함하는 반도체 장치 및 상기 반도체 장치의 동작 방법 有权
标题翻译：可变电阻元件，包括该可变电阻元件的半导体器件以及该半导体器件的操作方法
公开(公告)号：KR101744757B1
公开(公告)日：2017-06-09
申请号：KR1020100059108
申请日：2010-06-22
申请人： 삼성전자주식회사
发明人： 김영배 , 이창범 , 이동수 , 김창정 , 이명재 , 장만 , 이승렬
IPC分类号： G11C13/00 , G11C7/20 , G11C7/10
CPC分类号： G11C13/0007 , G11C13/0069 , G11C13/0097 , G11C2013/0073 , G11C2213/15 , G11C2213/31 , G11C2213/32
摘要： 본발명은반도체장치의동작방법을개시하는데, 가변저항소자를포함하는반도체장치의동작방법은, 가변저항소자에리셋펄스를인가하여가변저항소자를제1 저항상태에서제2 저항상태로변화시킴으로써반도체장치에제1 데이터를기입하고, 가변저항소자에셋 펄스를인가하여가변저항소자를제2 저항상태에서제1 저항상태로변화시킴으로써반도체장치에제2 데이터를기입하며, 리셋펄스의크기는셋 펄스의크기보다크고, 제2 저항상태는제1 저항상태보다저항이크다.
摘要翻译：通过本发明，在包括用于启动半导体装置的操作方法的可变电阻元件的半导体器件的操作方法的变化，通过从第一电阻状态，将复位脉冲施加到可变电阻元件的可变电阻元件的第二电阻状态通过将第一数据写入半导体器件并通过施加可变电阻元件复位脉冲将可变电阻元件从第二电阻状态改变为第一电阻状态，将第二数据写入半导体器件，脉冲，并且第二电阻状态的电阻比第一电阻状态大。

3. 发明公开

KR1020130098041A 낮은 외부 전원 전압에 적합한 전압 발생부들 无效
标题翻译：电压发生器适应低外部电源电压
公开(公告)号：KR1020130098041A
公开(公告)日：2013-09-04
申请号：KR1020120019832
申请日：2012-02-27
申请人： 삼성전자주식회사
发明人： 이동수
IPC分类号： G11C5/14 , G11C11/4074
CPC分类号： G11C11/4076 , G05F1/56 , G11C5/145 , G11C5/147 , G11C11/4074 , G11C11/4099 , G11C2207/2272 , H02M3/07
摘要： PURPOSE: Voltage generating parts suitable for a low external power voltage generate an internal power voltage in a target voltage level by generating a second reference voltage using an inflection point voltage level, and the internal power voltage using the second reference voltage. CONSTITUTION: A reference voltage generating unit (100) includes an inflection point control unit (110) and a level amplification unit (120). The inflection point control unit is driven by a first power voltage supplied from the outside and generates an inflection point voltage by receiving a first voltage. The level amplification unit is driven by a second power voltage higher than the first power voltage and generates a reference voltage by receiving the inflection point voltage. [Reference numerals] (110) Inflection point control unit; (120) Level amplification unit
摘要翻译：目的：适用于低外部电源电压的电压产生部件通过使用拐点电压电平产生第二参考电压，并使用第二参考电压产生内部电源电压，从而产生目标电压电平的内部电源电压。构成：参考电压产生单元（100）包括拐点控制单元（110）和电平放大单元（120）。拐点控制单元由从外部提供的第一电源电压驱动，并通过接收第一电压来产生拐点电压。电平放大单元由比第一电源电压高的第二电源电压驱动，并通过接收拐点电压产生参考电压。（附图标记）（110）拐点控制单元; （120）电平放大单元

4. 发明公开

KR1020130026803A 가변 저항 소자를 포함하는 반도체 장치 및 상기 반도체 장치의 동작 방법 无效
标题翻译：包含可变电阻元件的半导体器件和操作方法半导体器件
公开(公告)号：KR1020130026803A
公开(公告)日：2013-03-14
申请号：KR1020110090200
申请日：2011-09-06
申请人： 삼성전자주식회사
发明人： 장만 , 김영배 , 이동수 , 이창범 , 이승렬 , 김창정 , 이명재 , 김경민
IPC分类号： G11C13/00
CPC分类号： G11C13/0069 , G11C11/5685 , G11C13/0007 , G11C13/0033 , G11C2013/0076 , G11C2013/009 , G11C2013/0092 , G11C2211/5625 , G11C2213/31 , G11C2213/32
摘要： PURPOSE: A semiconductor device including a variable resistor device and an operating method thereof are provided to improve the reliability of the semiconductor device by improving a current distribution of the variable resistor device. CONSTITUTION: A reset voltage is applied to a variable resistor device(S310). A reset current flowing in the variable resistor device is sensed(S320). A set voltage applied to the variable resistor device is controlled based on the distribution of the reset current(S330).The reset voltage is applied to the variable resistor device based on the distribution of the reset current(S330). [Reference numerals] (AA) Start; (BB) End; (S310) Applying a reset voltage(V_RESET) to a variable resistor device; (S320) Sensing a reset current(I_REST) flowing through the variable resistor device; (S330) Controlling a set voltage(V_SET) based on the distribution of the reset current(I_RESET); (S340) Re-applying the set voltage(V_SET) based on the distribution of the reset current(I_RESET)
摘要翻译：目的：提供一种包括可变电阻器件及其操作方法的半导体器件，以通过改进可变电阻器件的电流分布来提高半导体器件的可靠性。构成：复位电压施加到可变电阻器件（S310）。感测到在可变电阻器件中流动的复位电流（S320）。基于复位电流的分布来控制施加到可变电阻器件的设定电压（S330）。基于复位电流的分布，复位电压被施加到可变电阻器件（S330）。（附图标记）（AA）开始; （BB）结束; （S310）对可变电阻器件施加复位电压（V_RESET）; （S320）检测流过可变电阻器件的复位电流（I_REST）; （S330）基于复位电流（I_RESET）的分布来控制设定电压（V_SET）; （S340）基于复位电流（I_RESET）的分布重新设定设定电压（V_SET）

5. 发明公开

KR1020130021199A 비휘발성 메모리 소자 및 그 구동 방법 无效
标题翻译：非易失性电阻记忆体装置及其驱动方法
公开(公告)号：KR1020130021199A
公开(公告)日：2013-03-05
申请号：KR1020110083580
申请日：2011-08-22
申请人： 삼성전자주식회사
发明人： 장만 , 김영배 , 이동수 , 이창범 , 이승렬 , 김창정 , 이명재 , 김경민
IPC分类号： G11C16/20 , G11C16/04 , G11C16/06
CPC分类号： G11C11/5685 , G11C13/0007 , G11C13/0064 , G11C13/0069
摘要： PURPOSE: A nonvolatile memory device and a driving method thereof are provided to secure a stable device operation by reducing the distribution of a plurality of reset currents at each level in a multilevel cell. CONSTITUTION: A first reset voltage is applied to a unit memory cell and a current reset current is read(S11). The current reset current is compared with a set current of a prior cycle(S16). If a difference between the current reset current and the prior set current is smaller than a preset value, a second reset voltage is applied to the unit memory cell(S21). If the difference between the current reset current and the prior set current is larger than a preset value, the set voltage is applied to the unit memory cell and the unit memory cell unit is switched into the set state and then the first reset voltage is applied again. [Reference numerals] (AA) Start; (BB,EE,GG,JJ) No; (CC) I_RESET first upper limit; (HH) I I_RESET - I_SET I > second upper limit; (KK) I I_RESET - I_SET I
摘要翻译：目的：提供一种非易失性存储器件及其驱动方法，以通过减少多电平单元中的每个电平上的多个复位电流的分布来确保稳定的器件操作。构成：将第一复位电压施加到单元存储单元，并读取当前复位电流（S11）。将当前复位电流与先前循环的设定电流进行比较（S16）。如果当前复位电流和先前设定电流之间的差小于预设值，则向单元存储单元施加第二复位电压（S21）。如果当前复位电流和先前设定电流之间的差异大于预设值，则将设定电压施加到单元存储单元，并将单元存储单元单元切换到设定状态，然后施加第一复位电压再次。（附图标记）（AA）开始; （BB，EE，GG，JJ）否; （CC）I_RESET <第一下限; （DD，II）是; （FF）I_RESET>第一上限; （HH）I I_RESET - I_SET I>第二上限; （KK）I I_RESET - I_SET I <第二下限; （LL）结束; （S10）向单元施加V_RESET的步骤; （S11）向单元读取I_RESET的步骤; （S12）确定单元电平的步骤; （S13）更改V_RESET条件; （S14）将更改的V_RESET应用于单元; （S15）应用V_SET; （S16）比较当前I_RESET和之前的I_SET的步骤; （S17）添加V_RESET; （S18，S20）检查I_RESET; （S19）添加V_SET + V_RESET; （S21）将V_SET应用于单位单元的步骤; （S22）读取单元的I_SET的步骤

6. 发明公开

KR1020120139082A 멀티비트 메모리요소, 이를 포함하는 메모리소자 및 이들의 제조방법 无效
标题翻译：多位存储器元件，包括其的存储器件及其制造方法
公开(公告)号：KR1020120139082A
公开(公告)日：2012-12-27
申请号：KR1020110058644
申请日：2011-06-16
申请人： 삼성전자주식회사
发明人： 이창범 , 김창정 , 김영배 , 이명재 , 이동수 , 장만 , 이승렬 , 김경민
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： G11C11/5685 , H01L27/2409 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1658 , H01L45/1675 , H01L45/147
摘要： PURPOSE: A multi-bit memory element, a memory device including the same, and a manufacturing method thereof are provided to suppress an undesirable physical/chemical and an excessive current flow between a memory layer and a second electrode by forming an auxiliary layer between the memory layer and the second electrode. CONSTITUTION: A second electrode(E2) is separated from a first electrode(E1). A memory layer(M1) is formed between the first electrode and the second electrode. The memory layer is composed of a first material layer(10) and a second material layer(20). An auxiliary layer(A1) is formed between the memory layer and the second electrode and provides a multi-bit memory property to the memory layer.
摘要翻译：目的：提供一种多位存储元件，包括其的存储器件及其制造方法，以通过在存储层和第二电极之间形成辅助层来抑制存储层和第二电极之间的不良物理/化学物质和过大的电流流动存储层和第二电极。构成：第二电极（E2）与第一电极（E1）分离。在第一电极和第二电极之间形成存储层（M1）。存储层由第一材料层（10）和第二材料层（20）组成。在存储层和第二电极之间形成辅助层（A1），并向存储层提供多位存储特性。

7. 外观设计

KR3006691720000S 有权
公开(公告)号：KR3006691720000S
公开(公告)日：2012-11-26
申请号：KR3020110016814
申请日：2011-04-25
申请人： 삼성전자주식회사
设计人： 전영근 , 이동수

8. 发明授权

KR101176543B1 저항성 메모리소자 有权
标题翻译：电阻随机存储器件
公开(公告)号：KR101176543B1
公开(公告)日：2012-08-28
申请号：KR1020060022728
申请日：2006-03-10
申请人： 삼성전자주식회사
发明人： 이명재 , 박윤동 , 황현상 , 이동수
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： H01L45/12 , G11C11/5685 , G11C13/0007 , G11C2213/32 , G11C2213/56 , H01L45/04 , H01L45/1233 , H01L45/146
摘要： Provided is a resistance random access memory (RRAM) device and a method of manufacturing the same. A resistance random access memory (RRAM) device may include a lower electrode, a first oxide layer on the lower electrode and storing information using two resistance states, a current control layer made of a second oxide on the first oxide layer and an upper electrode on the current control layer.

9. 发明公开

KR1020120020989A 비휘발성 메모리요소 및 이를 포함하는 메모리소자 有权
标题翻译：非易失性存储器元件和包括其的存储器件
公开(公告)号：KR1020120020989A
公开(公告)日：2012-03-08
申请号：KR1020100084970
申请日：2010-08-31
申请人： 삼성전자주식회사
发明人： 이창범 , 김창정 , 김영배 , 이명재 , 허지현 , 이동수 , 장만 , 이승렬
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： H01L27/2409 , G11C13/0007 , G11C2213/51 , G11C2213/55 , G11C2213/56 , G11C2213/72 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/147
摘要： PURPOSE: A nonvolatile memory element and a memory device including the same are provided to improve reliability, reproducibility, and stability of a memory characteristic by including a buffer layer between a memory layer and a first electrode. CONSTITUTION: A second electrode(E2) is separated with a first electrode(E1). A memory layer(M1) is included between the first electrode and the second electrode. The memory layer has a variable resistance characteristic with an ionic species movement. An oxygen supply layer and an oxygen exchange layer are formed on the memory layer. A buffer layer is included between the memory layer and the first electrode.
摘要翻译：目的：提供一种非易失性存储器元件和包括该非易失性存储元件的存储器件，以通过在存储层和第一电极之间包括缓冲层来提高存储器特性的可靠性，再现性和稳定性。构成：用第一电极（E1）分离第二电极（E2）。存储层（M1）包括在第一电极和第二电极之间。记忆层具有离子物质运动的可变电阻特性。在存储层上形成氧供给层和氧交换层。存储层和第一电极之间包括缓冲层。

10. 发明公开

KR1020110082929A 백라이트 유닛 无效
标题翻译：背光单元
公开(公告)号：KR1020110082929A
公开(公告)日：2011-07-20
申请号：KR1020100002876
申请日：2010-01-12
申请人： 삼성전자주식회사
发明人： 이동수
IPC分类号： G02F1/13357 , G02F1/1335
CPC分类号： G02B6/0078 , G02B6/0068 , G02B6/0083 , G02F1/133524 , G02F1/133603
摘要： PURPOSE: A backlight unit is provided to improve display quality by equalizing brightness and simplify the structure of the backlight unit. CONSTITUTION: A backlight unit(1) comprises a plurality of light guide plates(10) and a plurality of light sources which emit light to a light incident plane of the light guide plate. The light source is divided into a plurality of blocks along the longer axis of the light guide plate. Each divided light guide plate is located within each block of the light source. The light sources are placed by turns with the light guide plates.
摘要翻译：目的：提供背光单元，通过均衡亮度和简化背光单元的结构来提高显示质量。构成：背光单元（1）包括多个导光板（10）和向导光板的光入射面发光的多个光源。光源沿着导光板的长轴被分成多个块。每个分开的导光板位于光源的每个块内。光源与导光板一起放置。

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