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1. 发明授权

KR102176581B1 나노 구조체 및 이를 포함하는 광학 소자 有权
公开(公告)号：KR102176581B1
公开(公告)日：2020-11-09
申请号：KR20130134987
申请日：2013-11-07
申请人： 삼성전자주식회사 , 울산과학기술원
发明人： 김언정 , 노영근 , 김진은 , 박수진 , 박연상 , 백찬욱 , 유승민 , 이재숭 , 천상모
IPC分类号： B82B1/00 , H05B33/00
摘要： 나노구조체및 이를포함하는광학소자가개시된다. 개시된나노구조체는그래핀과같은탄소나노물질층상에금속으로형성된나노패턴을포함할수 있으며, 상기나노패턴표면에형성된금속층을포함할수 있다. 나노구조체는링형상으로형성될수 있으며, 상기금속층은서로다른금속들로형성된다수의금속층들로형성된것일수 있다.

2. 发明授权

KR101636915B1 그래핀 또는 탄소나노튜브를 이용한 반도체 화합물 구조체 및 그 제조방법과, 반도체 화합물 구조체를 포함하는 반도체 소자 有权
标题翻译：使用石墨烯或碳纳米管的半导体复合结构及其制造方法及包含半导体化合物的半导体器件
公开(公告)号：KR101636915B1
公开(公告)日：2016-07-07
申请号：KR1020100086586
申请日：2010-09-03
申请人： 삼성전자주식회사
发明人： 최준희 , 김언정 , 이상진
IPC分类号： H01L21/20
CPC分类号： H01L21/02538 , H01L21/02422 , H01L21/02444 , H01L29/1606 , H01L33/08 , H01L33/24
摘要： 그래핀또는탄소나노튜브를이용한반도체화합물구조체및 그제조방법과, 반도체화합물구조체를포함하는반도체소자가개시된다. 개시된반도체화합물구조체는기판상에마련되는것으로, 육각결정구조를구조를가지는탄소들을포함하는물질로이루어진버퍼층과, 이버퍼층상에성장형성되는반도체화합물층;을포함한다.

3. 发明公开

KR1020150050093A 지향성 광 추출 장치 및 이를 포함한 광 인터커넥션 시스템 审中-实审
标题翻译：输出方向光和互连系统的装置
公开(公告)号：KR1020150050093A
公开(公告)日：2015-05-08
申请号：KR1020130131503
申请日：2013-10-31
申请人： 삼성전자주식회사
发明人： 노영근 , 천상모 , 김언정 , 김진은 , 박연상 , 이장원
IPC分类号： G02B26/08 , G02B5/08
CPC分类号： H01S5/18391 , B82Y20/00 , G02B6/107 , H01L33/02 , H01L33/38 , H01L33/44 , H01S5/041 , H01S5/18383 , H01S5/423
摘要： 지향성광 추출장치및 이를포함한광 인터커넥션시스템이개시된다. 개시된지향성광 추출장치는, 광을방출하는발광구조물과, 상기발광구조물상에구비된것으로, 상기광을공진시키는광 공급부및 상기광 공급부로부터나온광이지향성을갖도록반사시키는광 반사부를포함하는광학안테나층을포함하고, 상기광 공급부는상기광학안테나층을관통하는슬롯형상을가진다.
摘要翻译：公开了一种定向光提取装置和包括该定向光提取装置的光互连系统。所公开的定向光提取装置包括发光的发光结构; 包括在所述发光结构中并且使所述光的共振的光供给单元; 以及光天线层，其包括反射从所述光供给单元发射的光以具有所述光的方向性的光反射单元。光供给单元具有穿过光天线层的槽形状。

4. 发明公开

KR1020140025158A 반도체 소자의 제조에서 전하축적 방지방법 审中-实审
标题翻译：防止半导体器件制造中的电荷累积的方法
公开(公告)号：KR1020140025158A
公开(公告)日：2014-03-04
申请号：KR1020120091469
申请日：2012-08-21
申请人： 삼성전자주식회사
发明人： 노영근 , 김언정 , 이장원
IPC分类号： H01L21/027 , H01L21/263
CPC分类号： H01L21/02115 , H01J37/026 , H01J2237/0041 , H01L21/2633 , H01L21/28123 , H01L21/31105 , H01J37/3174 , H01J2237/3174 , H01L21/0275 , H01L21/82
摘要： Disclosed is a method for preventing charge accumulation in a semiconductor device manufacturing process. According to one embodiment of the present invention, the method for preventing charge accumulation includes the steps of: forming a material layer on a substrate and patterning (processing) the material layer; and forming a graphene layer on the upper part or the lower part of the material layer before the material layer is patterned. The substrate can be an insulating substrate. Also, the substrate can be a laminate with a multi-layered structure.
摘要翻译：公开了一种在半导体器件制造工艺中防止电荷累积的方法。根据本发明的一个实施例，用于防止电荷累积的方法包括以下步骤：在衬底上形成材料层并构图（加工）材料层; 以及在材料层被图案化之前在材料层的上部或下部形成石墨烯层。衬底可以是绝缘衬底。此外，基板可以是具有多层结构的层叠体。

5. 发明公开

KR1020130132105A 그래핀 전사 방법 및 이를 이용한 소자의 제조방법 审中-实审
标题翻译：传送石墨的方法和使用该方法制造装置的方法
公开(公告)号：KR1020130132105A
公开(公告)日：2013-12-04
申请号：KR1020120056230
申请日：2012-05-25
申请人： 삼성전자주식회사
发明人： 김언정 , 허재현 , 김진은 , 노영근 , 박연상 , 이장원 , 이재숭 , 천상모
IPC分类号： C01B31/02 , B01J19/08
CPC分类号： C01B32/194 , B01J19/123
摘要： Disclosed are a method of transferring graphene and a method of manufacturing a device using the same. The method for transferring graphene is able to comprise a step of transferring graphene formed on a first substrate to a second substrate by using a cheap protective material. The protective material is able to include a material such as polystyrene or polystyrene-based material. A protective layer is able to be manufactured by spraying a mixture of a solvent and polystyrene on the graphene. The solvent has the boiling point of more than about 150°C. An etching solution having the surface tension of more than 32 dyne/cm is able to be used when the protective layer is removed after graphene transfer. The method of transferring graphene is able to additionally comprise a step of process the surface of the second substrate with ultraviolet rays when the graphene is transferred. The surface of the second substrate processed with the ultraviolet rays is able to have hydrophilicity.
摘要翻译：公开了转移石墨烯的方法和使用其制造器件的方法。用于转移石墨烯的方法能够包括通过使用便宜的保护材料将形成在第一衬底上的石墨烯转移到第二衬底的步骤。保护材料能够包括诸如聚苯乙烯或聚苯乙烯的材料的材料。能够通过在石墨烯上喷涂溶剂和聚苯乙烯的混合物来制造保护层。溶剂的沸点高于约150℃。当石墨烯转移后保护层被去除时，可以使用表面张力大于32达因/厘米的蚀刻溶液。转移石墨烯的方法能够另外包括当石墨烯转移时用紫外线处理第二基板的表面的步骤。用紫外线处理的第二基板的表面能够具有亲水性。

6. 发明公开

KR1020130030217A 표면 플라즈몬 레이저 审中-实审
标题翻译：表面等离子体激光
公开(公告)号：KR1020130030217A
公开(公告)日：2013-03-26
申请号：KR1020120101625
申请日：2012-09-13
申请人： 삼성전자주식회사
发明人： 이재숭 , 김언정 , 노영근 , 박연상
IPC分类号： H01S4/00
CPC分类号： H01S5/1046 , H01S3/1302 , H01S3/169 , H01S4/00
摘要： PURPOSE: A surface plasmon laser is provided to output a small laser beam exceeding a diffraction limit of a laser. CONSTITUTION: A surface plasmon laser(10) includes a metal layer(20), a gain medium layer(30), and a deformed part. The gain medium layer is placed on the metal layer and includes a circular structure part. The circular structure part generates a whispering gallery mode. The whispering gallery mode enables surface plasmon light generated by surface plasmon resonance on an interface with the metal layer along a circle. The deformed part outputs a part of a laser beam generated from the circular structure part of the gain medium layer.
摘要翻译：目的：提供表面等离激元激光器来输出超过激光衍射极限的小激光束。构成：表面等离子体激元（10）包括金属层（20），增益介质层（30）和变形部分。增益介质层被放置在金属层上并且包括圆形结构部分。圆形结构部分产生一个耳语画廊模式。耳语画廊模式使得通过表面等离子体共振产生的表面等离激元光在与金属层的界面上沿着圆形。变形部分输出从增益介质层的圆形结构部分产生的激光束的一部分。

7. 发明公开

KR1020110095660A 전도성 섬유 및 그의 용도 有权
标题翻译：电磁纤维及其用途
公开(公告)号：KR1020110095660A
公开(公告)日：2011-08-25
申请号：KR1020100015252
申请日：2010-02-19
申请人： 삼성전자주식회사
发明人： 박종진 , 허재현 , 김종민 , 차승남 , 김언정 , 손형빈
IPC分类号： D01F1/10 , D01F8/04 , D01D5/34 , D06M11/83
CPC分类号： H01B1/24 , Y10T428/292 , Y10T428/2929 , D01F1/10 , D01D5/34 , D01F1/106 , D01F8/04 , D06M11/83
摘要： PURPOSE: A conductive fiber and a use of the same are provided to include a fiber complex body which includes the conductive fiber, thereby increasing internal stress. CONSTITUTION: A conductive fiber and a use of the same include a conductive polymer, an elastic polymer, and a carbon nano tube. The carbon nano tube(2) is fixed in the conductive polymer, elastic polymer(1), or carbon nano tube. A fiber has a double layer structure of a shell and core. A composition material includes the conductive polymer, elastic polymer, carbon nano tube, and an ionic liquid. The fiber is manufactured by emitting the composition material.
摘要翻译：目的：提供导电纤维及其用途，包括包含导电纤维的纤维复合体，从而增加内应力。构成：导电纤维及其用途包括导电聚合物，弹性聚合物和碳纳米管。碳纳米管（2）固定在导电聚合物，弹性聚合物（1）或碳纳米管中。纤维具有壳和芯的双层结构。组合物材料包括导电聚合物，弹性聚合物，碳纳米管和离子液体。纤维通过发射组合物材料制造。

8. 发明公开

KR1020100123144A 탄소나노튜브 소자 어레이의 제조방법 有权
标题翻译：制备碳纳米管装置阵列的方法
公开(公告)号：KR1020100123144A
公开(公告)日：2010-11-24
申请号：KR1020090042192
申请日：2009-05-14
申请人： 삼성전자주식회사 , 성균관대학교산학협력단
发明人： 김언정 , 이은홍 , 이영희 , 이일하
IPC分类号： H01L21/027 , B82B3/00
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/16 , C01B2202/08 , B82B3/00 , H01L21/0332
摘要： PURPOSE: A manufacturing method of a carbon nano tube element is provided to form carbon nanotubes in a desired location by using a photolithography process. CONSTITUTION: An oxide layer(120) is formed on a substrate(110). A plurality of catalyst patterns are formed on the oxide layer. The catalyst patterns are formed by a photolithography process. A plurality of firsts and second electrodes(151,152) are formed by the photolithography process.
摘要翻译：目的：提供碳纳米管元件的制造方法，以通过使用光刻工艺在所需位置形成碳纳米管。构成：在衬底（110）上形成氧化物层（120）。在氧化物层上形成多个催化剂图案。催化剂图案通过光刻工艺形成。通过光刻工艺形成多个第一和第二电极（151,152）。

9. 发明公开

KR1020090113035A 앰비폴라 특성을 가진 탄소나노튜브 트랜지스터를 구비한전환가능한 논리회로 有权
标题翻译：包含具有偶极特性的碳纳米管晶体管的可转换逻辑电路
公开(公告)号：KR1020090113035A
公开(公告)日：2009-10-29
申请号：KR1020080038897
申请日：2008-04-25
申请人： 삼성전자주식회사 , 성균관대학교산학협력단
发明人： 김언정 , 이은홍 , 이영희 , 유우종
IPC分类号： H01L29/80 , B82Y10/00
CPC分类号： H03K19/173 , B82Y10/00 , B82Y30/00 , H01L27/283 , H01L51/0048 , H01L51/0545
摘要： PURPOSE: A convertible logic circuit comprising a carbon nano-tube transistor having an ambipolar characteristic is provided to allow a nano-tube transistor to be converted into an n type transistor and a p type transistor by using ambipolar characteristic of carbon nano-tube transistor. CONSTITUTION: In a convertible logic circuit comprising a carbon nano-tube transistor having an ambipolar characteristic, a field effect transistor is composed of a carbon nanotube(30) between a source and a drain and a gate insulating layer(40), a gate electrode(50). A logic circuit includes a first transistor and a second transistor and a input power is connected with the gate of the first transistor and the second transistor. A first electrode of the first transistor is connected with power voltage and the second electrode of the second transistor is ground.
摘要翻译：目的：提供一种包含具有双极特性的碳纳米管晶体管的可转换逻辑电路，以通过使用碳纳米管晶体管的双极特性，使纳米管晶体管转换为n型晶体管和p型晶体管。构成：在具有双极特性的碳纳米管晶体管的可转换逻辑电路中，场效应晶体管由源极和漏极之间的碳纳米管（30）和栅极绝缘层（40）构成，栅电极（50）。逻辑电路包括第一晶体管和第二晶体管，并且输入功率与第一晶体管和第二晶体管的栅极连接。第一晶体管的第一电极与电源电压连接，第二晶体管的第二电极被研磨。

10. 发明授权

KR102122963B1 광학 소자 및 광학 소자로부터의 광의 진행 방향을 제어하는 방법 有权
公开(公告)号：KR102122963B1
公开(公告)日：2020-06-15
申请号：KR1020140006267
申请日：2014-01-17
申请人： 삼성전자주식회사
发明人： 천상모 , 이장원 , 김언정 , 김진은 , 노영근 , 박연상 , 백찬욱 , 이재숭
IPC分类号： G02B26/00

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