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    • 3. 发明公开
    • 그래핀 전사 방법 및 이를 이용한 소자의 제조방법
    • 传送石墨的方法和使用该方法制造装置的方法
    • KR1020130132105A
    • 2013-12-04
    • KR1020120056230
    • 2012-05-25
    • 삼성전자주식회사
    • 김언정허재현김진은노영근박연상이장원이재숭천상모
    • C01B31/02B01J19/08
    • C01B32/194B01J19/123
    • Disclosed are a method of transferring graphene and a method of manufacturing a device using the same. The method for transferring graphene is able to comprise a step of transferring graphene formed on a first substrate to a second substrate by using a cheap protective material. The protective material is able to include a material such as polystyrene or polystyrene-based material. A protective layer is able to be manufactured by spraying a mixture of a solvent and polystyrene on the graphene. The solvent has the boiling point of more than about 150°C. An etching solution having the surface tension of more than 32 dyne/cm is able to be used when the protective layer is removed after graphene transfer. The method of transferring graphene is able to additionally comprise a step of process the surface of the second substrate with ultraviolet rays when the graphene is transferred. The surface of the second substrate processed with the ultraviolet rays is able to have hydrophilicity.
    • 公开了转移石墨烯的方法和使用其制造器件的方法。 用于转移石墨烯的方法能够包括通过使用便宜的保护材料将形成在第一衬底上的石墨烯转移到第二衬底的步骤。 保护材料能够包括诸如聚苯乙烯或聚苯乙烯的材料的材料。 能够通过在石墨烯上喷涂溶剂和聚苯乙烯的混合物来制造保护层。 溶剂的沸点高于约150℃。 当石墨烯转移后保护层被去除时,可以使用表面张力大于32达因/厘米的蚀刻溶液。 转移石墨烯的方法能够另外包括当石墨烯转移时用紫外线处理第二基板的表面的步骤。 用紫外线处理的第二基板的表面能够具有亲水性。