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71. 发明授权

KR100961594B1 기판 처리 장치 有权
公开(公告)号：KR100961594B1
公开(公告)日：2010-06-04
申请号：KR1020087012128
申请日：2007-04-24
申请人： 가부시키가이샤 히다치 고쿠사이 덴키
发明人： 야마모토데츠오 , 곤타니다다시
IPC分类号： H01L21/20 , H01L21/22
CPC分类号： C23C16/50 , C23C16/345 , C23C16/452 , C23C16/45542 , C23C16/4584 , C23C16/54 , H01J37/32009 , H01J37/32082 , H01J37/32541 , H01L21/3141 , H01L21/3185
摘要： 복수의 기판을 상하 방향으로 적층한 상태로 수용하는 처리실과, 상기 처리실 내에 처리 가스를 공급하는 가스 공급 시스템과, 상기 처리실 내의 분위기를 배기하는 배기 시스템과, 상기 처리 가스를 활성 상태로 하기 위해, 상기 기판의 적층 방향으로 연장된 가요성(可撓性)의 부재로 구성되는 적어도 한쌍의 전극과, 상기 전극을 수용하는 보호관을 가지고, 상기 보호관은 최상단의 기판 위치보다 윗쪽 영역에서 굴곡부가 설치되고, 상기 전극의 선단이 상기 굴곡부를 넘어 상기 보호관의 선단측에 위치하는 기판 처리 장치가 개시되어 있다.

72. 发明公开

KR1020100032812A 화학기상증착 장치와 이를 이용한 기판 처리 시스템 无效
标题翻译： CVD装置和基板处理系统
公开(公告)号：KR1020100032812A
公开(公告)日：2010-03-26
申请号：KR1020090040815
申请日：2009-05-11
申请人： 주식회사 테스
发明人： 장경호
IPC分类号： H01L21/205 , H01L21/02
CPC分类号： C23C16/54 , H01L21/67167 , H01L21/67742 , H01L21/68742
摘要： PURPOSE: A chemical vapor deposition apparatus and substrate processing system using the same forms the reaction space which at the same time can process the substrate of the different field inside one chamber a plurality of. The action efficiency and board processing productivity of the apparatus can be improved. CONSTITUTION: Reaction spaces(S11, S12) in which the processing of substrate is included in inside is each other communicated and a process chamber(210) is at least formed over two. Two or more gas supply units(220) is arranged in each reaction space upper. In order to be arranged in each reaction space lower and it is near in each gas supply unit two or more substrate seating units(240) is ascended and descended. It surrounds the upper of reaction spaces and the housing is divided by the state separated as the interval in the edge of the substrate seating unit. The reaction gas is exhausted to the separate space with the substrate seating unit. A conveying unit(250) transfers the substrate flowed in among the reaction space in one to the reaction space which is near.
摘要翻译：目的：一种化学气相沉积设备和使用该化学气相沉积设备的基板处理系统形成反应空间，同时可以处理一个室内不同场的衬底多个。可以提高装置的动作效率和板处理生产率。构成：将衬底的处理包含在内部的反应空间（S11，S12）彼此连通，并且处理室（210）至少形成在两个以上。在每个反应空间上部设置有两个或更多个气体供应单元（220）。为了排列在每个反应空间中，并且在每个气体供给单元中靠近，两个以上的基板座单元（240）上升和下降。它围绕反应空间的上部，并且壳体被分隔成基板座位单元的边缘中的间隔的状态分开。反应气体与基板座单元排出到分离的空间。输送单元（250）将在一个反应空间中流动的基板传送到靠近的反应空间。

73. 发明公开

KR1020100017761A 공통 플라즈마 코팅 구역에서 복수의 코팅 재료를 침착시키기 위한 장치 및 방법 无效
标题翻译：用于在普通等离子涂层区沉积多种涂料的装置和方法
公开(公告)号：KR1020100017761A
公开(公告)日：2010-02-16
申请号：KR1020097025834
申请日：2008-05-19
申请人： 엑사테크 엘.엘.씨.
发明人： 가스워스,스티븐,엠.
IPC分类号： C23C16/513 , C23C16/455 , C23C16/44
CPC分类号： C23C8/36 , C23C16/513 , C23C16/54
摘要： An apparatus and method for coating a substrate (20) moved along a path of travel through the apparatus. A plasma source (30) issues a plasma jet (32) into which a first reagent is injected from a discharge orifice (144,146) located upstream of the jet. A second reagent is injected into the jet from a discharge orifice (244,246) located downstream of the jet. A controller (166) is configured to regulate the flow of the first reagent according to a first set of parameters and regulate the flow of the second reagent according to a second set of parameters. As a result, the first and second reagents are applied to the substrate to form at least one layer of a coating on the substrate.
摘要翻译：一种用于涂覆沿着穿过该设备的行进路径移动的基底（20）的装置和方法。等离子体源（30）从位于射流上游的排放孔（144,146）发出等离子体射流（32），第一试剂从其中喷射入其中。将第二试剂从位于射流下游的排放孔（244,246）注入射流。控制器（166）被配置为根据第一组参数调节第一试剂的流量，并根据第二组参数调节第二试剂的流量。结果，将第一和第二试剂施加到基底上以在基底上形成至少一层涂层。

74. 发明公开

KR1020100017736A 평판 기판용 처리 시스템 失效
标题翻译：平面基板处理系统
公开(公告)号：KR1020100017736A
公开(公告)日：2010-02-16
申请号：KR1020097025715
申请日：2008-04-28
申请人： 뷔흘러 알제나우 게엠베하
发明人： 가이슬레르미카엘 , 메르츠토마스 , 뢰데르마리오 , 베크만루돌프
IPC分类号： C23C14/56 , H01J37/32 , H01L21/205
CPC分类号： H01J37/32568 , C23C16/4587 , C23C16/54 , H01J37/32009 , H01J37/32743 , H01J37/32788 , H01J2237/022 , H01L21/67005
摘要： Disclosed is a reactor for treating flat substrates, comprising a vacuum chamber (11) and a process chamber (9). A first electrode (5) and a counter electrode (7) which form two opposite walls of the process chamber are provided for generating a plasma. The counter electrode can accommodate the substrate (3). The reactor further comprises means for introducing (19, 23, 25) and evacuating gaseous material into and/or from process chamber, an inlet and outlet for the vacuum chamber, and a mechanism (41, 43) for varying the relative distance between the electrodes, a first relatively great distance being used when the process chamber is loaded and discharged and a second relatively short distance being used when the treatment is performed, and/or a device which is associated with the counter electrode, is used for accommodating substrates, and is designed such that the substrate is disposed at an angle alpha ranging from 0° to 90°, preferably at an angle of 1°, 3°, 5°, 7°, 9°, 11°, 13°, 15°, 17°, 20°, 25°, 30°, 40°, 45°, relative to the vertical direction at least while the treatment is performed, the substrate surface that is to be treated facing downward.
摘要翻译：公开了一种用于处理平坦基板的反应器，包括真空室（11）和处理室（9）。提供形成处理室的两个相对壁的第一电极（5）和对电极（7），用于产生等离子体。对电极可以容纳衬底（3）。反应器还包括用于引入（19,23,25）并将气体物质排入和/或从处理室，用于真空室的入口和出口的装置，以及用于改变真空室的入口和出口的机构（41,43）电极，当处理室被加载和排出时使用的第一相对较大的距离和在执行处理时使用的第二相对短的距离和/或与对电极相关的装置用于容纳基板，并且被设计成使得基板以0°至90°的角度α设置，优选以1°，3°，5°，7°，9°，11°，13°，15°，至少在进行处理时相对于垂直方向为17°，20°，25°，30°，40°，45°，待处理的基板表面朝下。

75. 发明授权

KR100942683B1 탄탈 질화물막의 형성 방법 有权
标题翻译：形成氮化钽膜的方法
公开(公告)号：KR100942683B1
公开(公告)日：2010-02-16
申请号：KR1020077012364
申请日：2006-03-03
申请人： 가부시키가이샤 알박
发明人： 고노헤나리시 , 도요다사토루 , 우시카와하루노리 , 곤도도모야스 , 나카무라규조
IPC分类号： C23C16/34 , H01L21/285 , H01L23/52
CPC分类号： C23C16/34 , C23C16/45527 , C23C16/45553 , C23C16/54 , C23C16/56 , H01L21/28562 , H01L21/3215 , H01L21/76843 , H01L21/76859
摘要： 진공 챔버 내에, Ta 의 주위에 RN-R', 또는 RNR' 및 =NR(R 및 R' 는, 탄소 원자수 1 ∼ 6 개의 알킬기를 나타내고, 각각이 동일한 기이어도 되고 상이한 기이어도 된다) 가 배위한 배위 화합물로 이루어지는 원료 가스 및 산소 원자 함유 가스를 도입하여, 기판 상에 흡착시킨 후에, 산소 원자 함유 가스를 도입하여 TaO
x N
y (R,R')
z 를 생성하고, 이어서 활성화된 반응 가스를 도입하여 Ta 에 결합된 산소를 환원시키고, 또한, N 에 결합된 R(R') 기를 절단 제거하여, Ta 리치의 탄탈 질화물막을 형성한다. 이로써, C, N 함유량이 낮고, Ta/N 조성비가 높고, Cu 막과의 밀착성이 확보되어 있는 배리어막으로서 유용한 저저항 탄탈 질화물막을 제공할 수 있다. 또, 얻어진 막 중에 스퍼터링에 의해 탄탈 입자를 박아 넣어, 더욱 탄탈 리치로 한다.
탄탈 질화물막, 탄탈 질화물막 형성 방법, 원자층 증착법
摘要翻译：在Ta附近具有RN-R'或RNR'和= NR（其中R和R'表示具有1至6个碳原子的烷基，其可以是相同的基团或不同的基团）然后引入含氧原子的气体，吸附在基底上，然后引入含氧原子的气体以形成TaO

76. 发明公开

KR1020100011539A 플라즈마 처리장치 有权
标题翻译：等离子体加工设备
公开(公告)号：KR1020100011539A
公开(公告)日：2010-02-03
申请号：KR1020080072797
申请日：2008-07-25
申请人： 주식회사 에스에프에이
发明人： 이상문 , 장상래
IPC分类号： H01L21/205
CPC分类号： C23C16/54 , H01J37/185 , H01L21/67201
摘要： PURPOSE: A plasma processing device for easily operating a maintenance task for a gate valve is provided to secure enough work space for separating a blade and connecting arm each other by interlinking a blade and a connecting arm at the side facing a transfer chamber. CONSTITUTION: A transfer chamber is separated with a loadlock chamber. A gate valve interlinks the loadlock chamber and the transfer chamber. The gate valve includes one or more first slot. The substrate transferred between the loadlock chamber and the transfer chamber passes through the first slot. One or more second slot is formed in the side of a valve housing facing the transfer chamber. A blade(120) is installed in the inside of the valve housing to be rotatable in order to open and close the second slot. A hinge shaft is installed inside of valve housing. One or more connecting arm interlinks the blade and the hinge shaft. One or more connecting member(150) connects the blade and the connecting arm.
摘要翻译：目的：提供一种用于容易地操作闸阀的维护任务的等离子体处理装置，用于通过在面向传送室的一侧连接刀片和连接臂来确保足够的工作空间，用于分离刀片和连接臂。构成：传送室与负载锁定室分离。闸阀将负载锁定室和传送室互连。闸阀包括一个或多个第一槽。在负载锁定室和转移室之间转移的衬底通过第一槽。一个或多个第二槽形成在面向传送室的阀壳的侧面。叶片（120）安装在阀壳体的内部以便旋转以便打开和关闭第二槽。铰链轴安装在阀壳内。一个或多个连接臂将叶片和铰链轴互连。一个或多个连接构件（150）连接叶片和连接臂。

77. 发明授权

KR100927930B1 기판 처리 장치 및 기판 처리 방법 有权
标题翻译： 기판처리장치및기판처리방법
公开(公告)号：KR100927930B1
公开(公告)日：2009-11-19
申请号：KR1020010006455
申请日：2001-02-09
申请人： 가부시키가이샤 히다치 고쿠사이 덴키
发明人： 이케다가즈히토 , 니시타니에이스케 , 사쿠마하루노부 , 나카고미가즈히로
IPC分类号： H01L21/205
CPC分类号： H01L21/67748 , C23C16/45521 , C23C16/4585 , C23C16/54 , H01L21/67751 , H01L21/68735
摘要： A substrate processing apparatus includes a chamber, a gas introducing portion, a gas discharge port, a substrate transfer gate, and a substrate moving member which moves the substrate between a substrate processing position where the substrate is processed in the chamber and a substrate transferring in-out position in the chamber where the substrate transferred into the chamber from the substrate transfer gate is located and where the substrate is located when the substrate is transferred out from the chamber through the substrate transfer gate. The gas introducing portion, the substrate processing position, the gas discharge port and the substrate transfer gate are disposed in this order. A gas restraining member which restrains processing gas for processing the substrate from flowing toward the substrate transfer gate is provided between the gas discharge port and the substrate transfer gate.
摘要翻译：一种基板处理装置，包括腔室，气体导入部，气体排出口，基板搬送门以及基板移动部件，所述基板移动部件使所述基板在所述腔室内进行所述基板的处理的基板处理位置与向所述基板移动的基板之间移动在从衬底传输门传输到腔室中的衬底所在的腔室中的位置以及当衬底通过衬底传输门从腔室传输出时位于衬底的位置。气体导入部，基板处理位置，气体排出口和基板传送门依次配置。在气体排出口与基板传送门之间设置抑制处理基板的处理气体向基板传送门流动的气体抑制构件。

78. 发明公开

KR1020090116809A 진공 코팅 장치 无效
标题翻译：真空涂装装置
公开(公告)号：KR1020090116809A
公开(公告)日：2009-11-11
申请号：KR1020097020095
申请日：2008-02-29
申请人： 텔 솔라 아게
发明人： 진델,아르노 , 포펠러,마르쿠스 , 짐인,드미트리 , 쿤,한스외르그 , 케슈바우머,요르그
IPC分类号： C23C14/56 , C23C16/54 , C23C14/08 , C23C16/40
CPC分类号： C23C14/568 , C23C14/541 , C23C16/54
摘要： An inline vacuum processing apparatus for processing of substrates in vacuum comprises at least one load-lock chamber (10), at least two subsequent deposition chambers (4-7) to be operated with essentially the same set of coating parameters and at least one unload-lock chamber (10) plus means for transferring, post-processing and/or handling substrates through and in the various chambers. A method for depositing a thin film on a substrate in such processing system comprises the steps of introducing a first substrate into a load-lock chamber, lowering the pressure in said chamber; transferring the substrate into a first deposition chamber; depositing a layer of a first material on said first substrate using a first set of coating parameters; transferring said first substrate into a second, subsequent deposition chamber of said inline system without breaking vacuum and depositing a further layer of said first material on said first substrate using substantially the same set of parameters. Simultaneously to step f) a second substrate is being treated in said inline vacuum system according to step d).
摘要翻译：用于在真空中处理衬底的在线真空处理设备包括至少一个装载锁定室（10），至少两个随后的沉积室（4-7），其基本上具有相同的一组涂层参数和至少一个卸载 - 锁定室（10）以及用于通过各室和在各个室中传送，后处理和/或处理基板的装置。一种在这种处理系统中在衬底上沉积薄膜的方法包括以下步骤：将第一衬底引入加载锁定室，降低所述腔室中的压力; 将衬底转移到第一沉积室中; 使用第一组涂层参数在所述第一衬底上沉积第一材料层; 将所述第一衬底转移到所述在线系统的第二后续沉积室中，而不会破坏真空并且使用基本上相同的参数集将所述第一材料的另一层沉积在所述第一衬底上。在步骤f）的同时，根据步骤d）在所述在线真空系统中处理第二衬底。

79. 发明公开

KR1020090102461A 화학 기상 증착 장치의 로드락 챔버 失效
标题翻译：化学气相沉积装置的装载室
公开(公告)号：KR1020090102461A
公开(公告)日：2009-09-30
申请号：KR1020080027922
申请日：2008-03-26
申请人： 주식회사 에스에프에이
发明人： 이상문 , 장상래 , 장철종
IPC分类号： H01L21/205 , H01L21/00
CPC分类号： C23C16/54 , H01L21/67201
摘要： PURPOSE: A loadlock chamber for chemical vapor deposition apparatus is provided to perform the exact alignment of a substrate and to improve productivity. CONSTITUTION: The loadlock chamber of the chemical vapor deposition apparatus includes the chamber body, the aligner(180), and the align reference plate. The chamber body has the one or more unit chamber. The aligner is combined with a region of the chamber body. The aligner pressurizes the substrate. The align reference plate is prepared to interact with each aligner. The align reference plate limits the rotation of each aligner. The align reference plate arranges the substrate.
摘要翻译：目的：提供一种用于化学气相沉积装置的装载室，以执行基板的精确对准并提高生产率。构成：化学气相沉积设备的负荷锁定室包括室主体，对准器（180）和对准参考板。腔体具有一个或多个单元室。对准器与腔体的区域结合。对准器对基板加压。准备参考板准备与每个对准器相互作用。对准参考板限制每个对准器的旋转。对齐基准板布置基板。

80. 发明公开

KR1020090082510A 화학기상증착 챔버용 온도제어 퍼지 게이트 밸브 有权
标题翻译：化学蒸气沉积室的温度控制浇口阀
公开(公告)号：KR1020090082510A
公开(公告)日：2009-07-30
申请号：KR1020097012939
申请日：2007-11-16
申请人： 소이텍
发明人： 아레나샨탈 , 워코벤크리스티안
IPC分类号： H01L21/205
CPC分类号： C30B25/14 , C23C16/303 , C23C16/4401 , C23C16/4412 , C23C16/481 , C23C16/54 , C30B29/403 , H01L21/0254 , H01L21/0262 , Y10T117/10 , Y10T117/1008
摘要： The present invention relates to methods and apparatus that are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the methods relate to substantially preventing the formation of unwanted materials on an isolation valve fixture within a chemical vapor deposition (CVD) reactor. In particular, the invention provides apparatus and methods for limiting deposition/condensation of GaCl3 and reaction by-products on an isolation valve that is used in the system and method for forming a monocrystalline Group III-V semiconductor material by reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber.
摘要翻译：本发明涉及为生产III-N（氮）化合物半导体晶片而专门用于生产GaN晶片的方法和装置。具体地说，这些方法涉及基本上防止在化学气相沉积（CVD）反应器内的隔离阀装置上形成不需要的材料。特别地，本发明提供了用于限制用于系统中的隔离阀上的GaCl 3和反应副产物的沉积/冷凝的装置和方法，以及通过使一定量的气态反应形成单晶III-V族半导体材料的方法 III族前体作为一种反应物，一定量的气态V族组分作为反应室中的另一反应物。

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