专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明公开

KR1020140082420A 박막 트랜지스터의 어레이 형성 방법 审中-实审
标题翻译：制备薄膜晶体管阵列的方法
公开(公告)号：KR1020140082420A
公开(公告)日：2014-07-02
申请号：KR1020120152362
申请日：2012-12-24
申请人： 동우 화인켐 주식회사
发明人： 권오병 , 이지연 , 전현수
IPC分类号： H01L21/336 , H01L29/786
CPC分类号： H01L27/1259 , C23F1/16 , H01L21/3063 , H01L21/32134
摘要： The present invention relates to a method of preparing the array of a thin film transistor. More particularly, the present invention includes a step of etching an active layer and an n+ doping layer, a source/drain electrode layer as an etchant composite, which includes hydrogen peroxide of 5 to 25 wt%, a F-containing compound of 5 to 20 wt%, an azol compound of 0.1 to 15 wt%, an organic acid or its salt of 1 to 15 wt%, and residual water at once. The present invention relates to a method of preparing the array of a thin film transistor which etches an active layer, an n+ doping layer, a source/drain layer together in an etching process at one time.
摘要翻译：本发明涉及制备薄膜晶体管阵列的方法。更具体地说，本发明包括蚀刻有源层和n +掺杂层的步骤，作为蚀刻剂复合材料的源极/漏极电极层，其包括5至25重量％的过氧化氢，含F的化合物5至 20重量％，0.1〜15重量％的唑类化合物，1〜15重量％的有机酸或其盐，以及一次残留的水。本发明涉及一种制备薄膜晶体管阵列的方法，该薄膜晶体管在蚀刻过程中一次蚀刻有源层，n +掺杂层，源极/漏极层。

62. 发明授权

KR101328156B1 인쇄회로기판 및 엘시디 반도체용 에칭제 합성방법 有权
标题翻译：用于PCB和LCD半导体的蚀刻剂的合成
公开(公告)号：KR101328156B1
公开(公告)日：2013-11-13
申请号：KR1020120070813
申请日：2012-06-29
申请人： 주식회사 워켐
发明人： 문부현
IPC分类号： C23F1/16 , C23F1/44
CPC分类号： C23F1/16 , C09K13/00 , H01L21/302 , H05K3/002
摘要： The present invention relates to an etching agent synthetizing method for a printed circuit board (PCB) and an LCD semiconductor comprising: a mixing step of stirring and mixing aqueous nitric acid and aminoguanidine hicarbonate; an adding step of adding aqueous sodium nitrate to a reaction product generated through the mixing step; an aging step for heating the reaction product to be aged after putting ammonia into the reaction product generated through the adding step; an acidity control step for cooling and adding sulfuric acid into the reaction product generated through the aging step to control the acidity of the reaction product; a cooling recrystallization step for cooling the reaction product generated through the acidity control step to be crystallized; and a filtering and drying step for filtering and drying the reaction product generated through the cooling recrystallization step. [Reference numerals] (AA) Start;(BB) End;(S101) Mixing step;(S103) Adding step;(S105) Aging step;(S107) Acidity adjustment step;(S109) Cooling and recrystallization step;(S111) Filtering and drying step
摘要翻译：本发明涉及一种用于印刷电路板（PCB）和LCD半导体的蚀刻剂合成方法，包括：搅拌和混合硝酸水溶液和氨基胍碳酸氢盐的混合步骤; 向通过混合步骤生成的反应产物中加入硝酸钠水溶液的添加步骤; 老化步骤，用于在将氨加入通过添加步骤产生的反应产物中之后加热待老化的反应产物; 酸性控制步骤，用于冷却并将硫酸加入到通过老化步骤产生的反应产物中以控制反应产物的酸度; 冷却再结晶步骤，用于冷却通过酸度控制步骤产生的反应产物进行结晶; 以及过滤和干燥通过冷却再结晶步骤生成的反应产物的过滤和干燥步骤。（S10）加热步骤;（S107）老化步骤;（S107）酸度调节步骤;（S109）冷却再结晶步骤;（S111）过滤和干燥步骤

63. 发明公开

KR1020130042273A 식각용 조성물 및 이를 이용하는 반도체 기억 소자의 형성 방법 有权
标题翻译：用于蚀刻的组合物和使用其形成半导体存储器件的方法
公开(公告)号：KR1020130042273A
公开(公告)日：2013-04-26
申请号：KR1020110106461
申请日：2011-10-18
申请人： 삼성전자주식회사 , 솔브레인 주식회사
发明人： 홍영택 , 임정훈 , 이진욱 , 정찬진 , 한훈 , 박재완 , 박성환 , 이양화 , 윤병문 , 엄대홍 , 배상원 , 정지훈 , 김경현 , 김경환 , 문창섭 , 차세호 , 고용선
IPC分类号： C09K13/04 , C09K13/00 , H01L21/306
CPC分类号： H01L21/02658 , C09K13/04 , C09K13/06 , C23F1/16 , H01L21/31111 , H01L27/11556 , H01L27/11582 , H01L29/66825 , H01L29/66833 , H01L29/7889 , H01L29/7926
摘要： PURPOSE: An etching composition is provided to have high selectivity to a nitrogen membrane, to minimize the generation of a particle in an etching process, and to minimize precipitation of a reaction side product. CONSTITUTION: An etching composition contains phosphor, ammonium ion, silicon atom, an atomic group which contains an amino group directly coupled to the silicon atom, and a silicon compound with two or more oxygen atoms coupled to the silicon atom. The atomic group is an amino alkoxy group or amino alkyl group. The silicon compound is represented by chemical formula 1: R^1-Si-(-O-H)3. In chemical formula 1, R^1 contains an amino alkoxy group or amino alkyl group. [Reference numerals] (AA) Etching selection ratio; (BB) Comparative example 1; (CC) Comparative example 2; (DD) Comparative example 3; (EE) Example 1; (FF) Example 2; (GG) Example 3; (HH) Example 4; (II) Example 5;
摘要翻译：目的：提供蚀刻组合物以对氮膜具有高选择性，以最小化蚀刻工艺中的颗粒的产生，并使反应副产物的沉淀最小化。构成：蚀刻组合物含有荧光体，铵离子，硅原子，含有与硅原子直接连接的氨基的原子团，以及具有与硅原子连接的两个以上氧原子的硅化合物。原子团是氨基烷氧基或氨基烷基。硅化合物由化学式1表示：R 1-Si - （ - O-H）3。在化学式1中，R 1含有氨基烷氧基或氨基烷基。（附图标记）（AA）蚀刻选择比; （BB）比较例1; （CC）比较例2; （DD）比较例3; （EE）实施例1; （FF）实施例2; （GG）实施例3; （HH）实施例4; （II）实施例5

64. 发明公开

KR1020130016068A 액정표시장치용 어레이 기판의 제조방법 审中-实审
标题翻译：用于液晶显示的阵列基板的制造方法
公开(公告)号：KR1020130016068A
公开(公告)日：2013-02-14
申请号：KR1020120081098
申请日：2012-07-25
申请人： 동우 화인켐 주식회사
发明人： 전현수 , 이석 , 이현규 , 정경섭
IPC分类号： G02F1/1368 , H01L29/78 , C09K13/00
CPC分类号： G02F1/136286 , C09K13/00 , C23F1/16 , H01L29/458 , H01L29/4908
摘要： PURPOSE: A method for fabricating an array substrate for a liquid crystal display device is provided to simplify an etching process by etching a gate electrode, a gate line, a source electrode, a drain electrode, and a data line at the same time. CONSTITUTION: Etching composition is used for etching a copper metal, a multilayer of the copper metal film and a metal oxide film, or a molybdenum metal layer. The etching composition includes hydrogen peroxide, fluorine containing compound, azole compound, sulfonic acid, and water. The Etching composition removes a residue due to an etching process. The azole compound controls the etching rate of the copper metal film. The sulfonic acid improves the taper angle and directivity of an etched metal layer.
摘要翻译：目的：提供一种用于液晶显示装置的阵列基板的制造方法，以同时蚀刻栅电极，栅极线，源电极，漏电极和数据线来简化蚀刻工艺。构成：蚀刻组合物用于蚀刻铜金属，铜金属膜和金属氧化物膜的多层或钼金属层。蚀刻组合物包括过氧化氢，含氟化合物，唑类化合物，磺酸和水。蚀刻组合物由于蚀刻工艺而除去残留物。唑类化合物控制铜金属膜的蚀刻速率。磺酸改善了蚀刻金属层的锥角和方向性。

65. 发明公开

KR1020120070099A 몰리브덴과 티타늄을 포함하는 합금막 또는 인듐 산화막용 식각액 조성물 有权
标题翻译：用于包含MO和TI或氧化物层的合金层的蚀刻溶液组合物
公开(公告)号：KR1020120070099A
公开(公告)日：2012-06-29
申请号：KR1020100131517
申请日：2010-12-21
申请人： 동우 화인켐 주식회사
发明人： 이우람 , 이석 , 김진성 , 정경섭
IPC分类号： C23F1/26 , C23F1/30 , C23F1/44
CPC分类号： C23F1/26 , C23F1/02 , C23F1/10 , C23F1/14 , C23F1/16 , C23F1/30 , C23F1/44
摘要： PURPOSE: An etchant composition for an alloy film containing molybdenum and titanium or an indium oxide film is provided to effectively etch both an alloy film containing molybdenum and titanium and an indium oxide film and to minimize etching performance on copper. CONSTITUTION: An etchant composition for an alloy film containing molybdenum and titanium or an indium oxide film comprises H2O2 of 5-30 weight%, a fluorocompound of 0.01-5 weight%, a water-soluble compound of 0.1-5 weight%, and water of the remaining amount. The water-soluble compound, including nitrogen atoms and carboxyl group in one molecule, is selected from the group consisting of alanine, aminobutyric acid, glutamic acid, glycine, iminodiacetic acid, nitrilotriacetic acid, and sarcosine. The fluorocompound is selected from the group consisting of HF, NaF, NH4F, NH4BF4, NH4FHF, KF, KHF2, AlF3, and HBF4.
摘要翻译：目的：提供含有钼和钛或氧化铟膜的合金膜的蚀刻剂组合物，以有效地蚀刻包含钼和钛的合金膜和氧化铟膜，并使铜的蚀刻性能最小化。构成：含有钼和钛或氧化铟膜的合金膜的蚀刻剂组合物包括5-30重量％的H 2 O 2，0.01-5重量％的氟化合物，0.1-5重量％的水溶性化合物和水的余额。一分子中包含氮原子和羧基的水溶性化合物选自丙氨酸，氨基丁酸，谷氨酸，甘氨酸，亚氨基二乙酸，次氮基三乙酸和肌氨酸。氟化合物选自HF，NaF，NH4F，NH4BF4，NH4FHF，KF，KHF2，AlF3和HBF4。

66. 发明公开

KR1020110104712A 화학부식에 의해 형성된 문자를 구비한 시계 문자판의 제조방법 无效
标题翻译：通过化学腐蚀制备定时电极的制造方法
公开(公告)号：KR1020110104712A
公开(公告)日：2011-09-23
申请号：KR1020100023767
申请日：2010-03-17
申请人： 윤석현
发明人： 윤석현
IPC分类号： C23F1/02 , B05D1/38 , B24B7/00 , G04B19/10
CPC分类号： G04B19/10 , B05D1/38 , B24B1/00 , C09K13/04 , C23F1/02 , C23F1/16
摘要： 본 발명은 화학부식에 의해 형성된 문자를 구비한 시계 문자판의 제조방법에 관한 것으로, 금속 재질의 박판(薄板)으로 된 기본틀의 상면을 평탄하게 연삭 가공하는 연삭단계와, 상기 연삭단계를 거친 기본틀의 상면에 도형, 문자, 그림 등의 특수문자체를 윤곽선으로 표현하는 전사단계와, 상기 전사된 특수문자체의 윤곽선을 제외한 부식음각부에 부식액을 처리하는 에칭단계와, 상기 에칭단계를 거친 기본틀에서 부식액을 씻어내기 위해 세정액을 처리하는 세정단계와, 상기 세정단계를 거친 기본틀의 부식음각부에 에폭시수지와 유리분말 및 특정색채를 갖는 도료의 혼합액을 도포하는 제1도장처리단계와, 상기 제1도장처리단계 후에 상기 기본틀에 도포 된 혼합액을 건조하는 제1건조단계와, 상기 제1건조단계를 거쳐 건조된 혼합액의 상면 전체에 투명도료를 도포하여 투명도료층을 형성하는 제2도장처리단계와, 상기 제2도장처리단계 후에 상기 투명도료를 건조하는 제2건조단계와, 상기 제2건조단계를 거쳐 건조된 투명도료층을 연마포로 래핑(Lapping)해주는 연마단계로 구성된다.
따라서, 시계 문자판을 제조하는 작업시간을 현저히 단축할 수 있으며, 대량생산이 가능하여 생산비용의 절감 효과를 기대할 수 있고, 박판의 시계 문자판에 다양하고 세밀한 특수문양을 형성시킬 수 있으며, 에폭시 수지를 이용할 수 있어 제품의 미관을 향상시킬 수 있는 매우 유용한 발명이다.

67. 发明公开

KR1020100087598A 염산 수용액 내에서 화학적 에칭에 의하여 제조된 산화아연나노콘 및 그의 제조방법 有权
标题翻译：在HCL水溶液中使用湿化学蚀刻制备的ZNO纳米颗粒及其制备方法
公开(公告)号：KR1020100087598A
公开(公告)日：2010-08-05
申请号：KR1020090006715
申请日：2009-01-28
申请人： 명지대학교 산학협력단
发明人： 최영진 , 배준호 , 심이레 , 박미나
IPC分类号： C23F1/30 , C23F1/16 , B82Y40/00
CPC分类号： C23F1/30 , B82Y40/00 , C23F1/16
摘要： PURPOSE: A ZnO nano cone and a preparation method thereof are provided to enable mass production of nanocone within a short time by employing wet chemical etching using HCl solution. CONSTITUTION: A preparation method of ZnO nanocone comprises the steps of: forming ZnO nanowire or ZnO nanorod on a substrate, dipping the substrate with zinc nanowire or ZnO nanorod in HCl solution, carrying out wet chemical etching by agitating the HCl solution in which the substrate with zinc nanowire or ZnO nanorod is dipped, and separating the substrate from the HCl solution and cleaning with ultra-pure water.
摘要翻译：目的：提供一种ZnO纳米锥及其制备方法，通过使用HCl溶液进行湿化学蚀刻，可以在短时间内大量生产纳米酮。构成：ZnO纳米酮的制备方法包括以下步骤：在衬底上形成ZnO纳米线或ZnO纳米棒，将基底用锌纳米线或ZnO纳米棒浸入HCl溶液中，通过搅拌HCl溶液进行湿化学蚀刻，其中衬底用锌纳米线或ZnO纳米棒浸渍，并将基底与HCl溶液分离并用超纯水清洗。

68. 发明公开

KR1020100015974A 웨이퍼 재생을 위한 물질의 스트리핑 방법 无效
标题翻译：用于剥离材料进行回收的方法
公开(公告)号：KR1020100015974A
公开(公告)日：2010-02-12
申请号：KR1020097022496
申请日：2008-03-31
申请人： 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드
发明人： 지앙핑 , 코젠스키마이클비 , 민젝데이비드더블유
IPC分类号： G03F7/42 , H01L21/027
CPC分类号： H01L21/02079 , C11D1/004 , C11D1/29 , C11D3/042 , C11D3/046 , C11D3/3454 , C11D3/3947 , C11D11/0041 , C23F1/16 , G03F7/423 , H01L21/31111 , H01L21/31133 , H01L21/32134 , G03F7/3092
摘要： Removal compositions and processes for removing at least one material layer from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves substantial removal of the material(s) to be removed while not damaging the layers to be retained, for reclaiming, reworking, recycling and/or reuse of said structure.
摘要翻译：去除组合物和从其上具有相同材料的废弃微电子器件结构去除至少一个材料层的方法。除去组合物包括氢氟酸。组合物实质上除去待除去的材料，同时不损坏要保留的层，用于回收，再加工，再循环和/或再利用所述结构。

69. 发明公开

KR1020090095315A 산화물 반도체 박막 트랜지스터의 소스 및 드레인 전극용에칭액 및 이를 이용한 산화물 반도체 박막 트랜지스터의제조방법 无效
标题翻译：用于氧化物半导体薄膜晶体管的源极和漏极电极的蚀刻解决方案，以及使用该氧化物半导体薄膜晶体管的氧化物半导体薄膜晶体管的制造方法
公开(公告)号：KR1020090095315A
公开(公告)日：2009-09-09
申请号：KR1020080020585
申请日：2008-03-05
申请人： 삼성전자주식회사
发明人： 박경배 , 김태상 , 이상윤 , 류명관 , 권장연 , 유병욱 , 손경석 , 정지심
IPC分类号： C09K13/04 , H01L21/306 , H01L29/786
CPC分类号： C09K13/04 , C23F1/16 , H01L21/306 , H01L29/41733 , H01L29/7869
摘要： An etchant for the source of an oxide semiconductor thin film transistor and a drain electrode, and a method for preparing an oxide semiconductor thin film transistor by using the etchant are provided to prevent the back etching of an oxide semiconductor and the dissolution of an oxide semiconductor and to improve etching rate. An etchant for the source of an oxide semiconductor thin film transistor and a drain electrode comprises hydrogen peroxide, ammonium hydroxide, and water. A manufacturing method of an oxide semiconductor thin film transistor comprises the steps of forming a gate on a substrate(110), and forming a gate insulating layer(114) on the substrate so as to cover the gate; forming a channel layer(116) comprising an oxide semiconductor on the gate insulating layer; and forming a metal layer for the formation of a source and a drain electrode at on both surfaces of the channel layer, and pattering it by using the etchant to form a source and drain electrodes(118a,118b).
摘要翻译：提供了用于氧化物半导体薄膜晶体管和漏极的源的蚀刻剂，以及通过使用蚀刻剂制备氧化物半导体薄膜晶体管的方法，以防止氧化物半导体的反向蚀刻和氧化物半导体的溶解并提高蚀刻速率。用于氧化物半导体薄膜晶体管和漏电极源的蚀刻剂包括过氧化氢，氢氧化铵和水。氧化物半导体薄膜晶体管的制造方法包括以下步骤：在衬底（110）上形成栅极，并在衬底上形成栅极绝缘层（114）以覆盖栅极; 在所述栅极绝缘层上形成包含氧化物半导体的沟道层（116）; 以及在沟道层的两个表面上形成用于形成源极和漏极的金属层，并且通过使用蚀刻剂来形成源极和漏极以形成源极和漏极（118a，118b）。

70. 发明公开

KR1020090095181A 금속배선 형성용 식각액 조성물, 이 조성물을 이용한도전막의 패터닝 방법 및 평판 표시 장치의 제조방법 无效
标题翻译：用于图案金属层的蚀刻组合物，使用其形成导电层的方法和使用其制造平板显示器的方法
公开(公告)号：KR1020090095181A
公开(公告)日：2009-09-09
申请号：KR1020080020352
申请日：2008-03-05
申请人： 삼성디스플레이 주식회사 , 솔브레인 주식회사
发明人： 김봉균 , 박홍식 , 정종현 , 홍선영 , 이지선 , 이병진 , 백귀종 , 이태형 , 송용성
IPC分类号： C23F1/16
CPC分类号： C09K13/06 , H01L29/458 , H01L29/4908 , C23F1/16 , C23F1/02 , C23F1/20 , C23F1/26 , H01L21/302
摘要： An etchant composite for forming a metal wiring and a method for patterning a conductive film and for manufacturing a flat panel display using the etchant composite are provided to extend the lifetime of etchant by lowering the vocalization of the oxidizer. A manufacturing method of a flat panel display using the etchant composite for forming a metal wiring comprises a substrate(100). A gate wiring and a gate electrode(110) are formed by forming a first conductive film on the substrate and patterning. A semiconductor layer is formed on the top of the substrate in which the gate wiring is formed. After forming a second conductive film on the semiconductor layer and patterning, and then a source electrode(140a) and a drain electrode(140b) are formed. A protective layer(150) has a contact hole(CNT) exposing one part of the drain electrode is built up. A third conductive film is electrically connected with the drain electrode through a contact hole and located on the protective layer. The third conductive film is patterned to form a pixel electrode(160).
摘要翻译：提供用于形成金属布线的蚀刻剂复合材料和用于图案化导电膜并用于使用蚀刻剂复合材料制造平板显示器的方法，以通过降低氧化剂的发声来延长蚀刻剂的使用寿命。使用蚀刻剂复合材料形成金属布线的平板显示器的制造方法包括基板（100）。通过在衬底上形成第一导电膜并进行构图，形成栅极布线和栅电极（110）。在形成栅极布线的基板的顶部上形成半导体层。在半导体层上形成第二导电膜并构图后，形成源电极（140a）和漏电极（140b）。保护层（150）具有暴露一部分漏电极的接触孔（CNT）。第三导电膜通过接触孔与漏极电连接并位于保护层上。图案化第三导电膜以形成像素电极（160）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式