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1. 发明授权

KR102142425B1 액정표시장치용 어레이 기판의 제조방법 有权
公开(公告)号：KR102142425B1
公开(公告)日：2020-08-07
申请号：KR1020190130528
申请日：2019-10-21
申请人： 동우 화인켐 주식회사
发明人： 이현규 , 김진성 , 양규형 , 박영철
IPC分类号： G02F1/1362 , H01L29/45 , H01L29/49 , H01L21/3213 , C23F1/18

2. 发明授权

KR101636572B1 액정표시장치용 어레이 기판의 제조방법 有权
标题翻译：液晶显示器阵列基板的制造方法
公开(公告)号：KR101636572B1
公开(公告)日：2016-07-06
申请号：KR1020090112819
申请日：2009-11-20
申请人： 동우 화인켐 주식회사
发明人： 윤영진 , 이석 , 이현규
IPC分类号： G02F1/136 , H01L29/786
摘要： 본발명은 a)기판상에게이트배선을형성하는단계; b)상기게이트배선을포함한기판상에게이트절연층을형성하는단계; c)상기게이트절연층상에반도체층을형성하는단계; d)상기반도체층상에소스및 드레인전극을형성하는단계; 및 e)상기드레인전극에연결된화소전극을형성하는단계를포함하는액정표시장치용어레이기판의제조방법에있어서, 상기 a)단계는기판상에구리계금속막을형성하고상기구리계금속막을식각액조성물로식각하여게이트배선을형성하는단계를포함하고, 상기 d)단계는반도체층상에구리계금속막을형성하고상기구리계금속막을식각액조성물로식각하여소스및 드레인전극을형성하는단계를포함하며, 상기식각액조성물은, 조성물총 중량에대하여, A)과산화수소(HO) 0.1 내지 5 중량%, B)과황산염 1 내지 20 중량%, C)유기산 0.1 내지 5중량%, D)함불소화합물 0.01 내지 5.0 중량% 및 D)잔량의물을포함하는것을특징으로하는액정표시장치용어레이기판의제조방법에관한것이다.
摘要翻译：本发明提供了一种制造半导体器件的方法，包括：a）在衬底上形成栅极布线; b）在包括栅极布线的基板上形成栅极绝缘层; c）在栅极绝缘层上形成半导体层; d）在半导体层上形成源电极和漏电极; 和e）一种制造液晶显示装置的术语射线基板和形成连接至所述漏电极的像素电极的方法，其中a）包括蚀刻液体组合物膜形成在衬底上的铜基的金属和铜系金属的膜蚀刻，包括形成栅极布线线的步骤，并且其中所述步骤d）包括形成铜基金属膜的半导体层，以形成源极和通过在所述蚀刻液体组合物进行蚀刻以在金属膜的铜漏极电极的步骤，所述蚀刻液体组合物，相对于组合物重量的水炮，a）过氧化氢（HO）0.1〜5重量％，B）和1〜20重量％，C）有机酸，0.1至5重量％，d）含氟化合物硫酸盐0.01〜5.0重量份％和D）水。本发明涉及一种制造液晶显示装置的方法。

3. 发明授权

KR101520921B1 식각액 조성물, 이를 사용한 금속 패턴의 형성 방법 및 박막 트랜지스터 표시판의 제조 방법 有权
公开(公告)号：KR101520921B1
公开(公告)日：2015-05-18
申请号：KR1020080110435
申请日：2008-11-07
申请人： 삼성디스플레이 주식회사 , 동우 화인켐 주식회사
发明人： 최영주 , 김봉균 , 이병진 , 정종현 , 홍선영 , 서남석 , 박홍식 , 김기섭 , 이승용 , 이준우 , 박영철 , 진영준 , 양승재 , 이현규 , 장상훈 , 임민기
IPC分类号： C09K13/06 , G03F7/32
CPC分类号： H01L21/32134 , C09K13/06 , C23F1/18 , H01L27/124 , H01L27/1288 , H01L29/66765
摘要： 본발명은인산 40 내지 65 중량%, 질산 2 내지 5 중량%, 초산 2 내지 20 중량%, 인산염을포함하는화합물 0.1 내지 2 중량%, 아미노기와카르복실기를동시에함유하는화합물 0.1 내지 2 중량% 및전체조성물의총 중량이 100 중량%가되도록하는물을포함하는식각액조성물, 이를사용한금속패턴의형성방법및 박막트랜지스터표시판의제조방법에관한것이다.

4. 发明授权

KR101456930B1 식각액 조성물 有权
标题翻译：蚀刻溶液组合物
公开(公告)号：KR101456930B1
公开(公告)日：2014-10-31
申请号：KR1020080061607
申请日：2008-06-27
申请人： 동우 화인켐 주식회사
发明人： 양승재 , 이현규 , 임민기
IPC分类号： H01L21/3063
摘要： 본 발명은 조성물 총 중량에 대하여, H
2 O
2 5 내지 30 중량%; 함불소 화합물 0.1 내지2 중량%; NH
4
+ 염을 포함하는 화합물 0.5 내지 5 중량%; 및 물 잔량을 함유하는 것을 특징으로 하는 식각액 조성물에 관한 것이다.
본 발명은 티타늄 또는 티타늄 합금, 알루미늄 또는 알루미늄 합금으로 구성된 단일막 및 상기 금속을 포함하는 이중막 이상의 다중막을 일괄 습식 식각할 수 있는 식각액 조성물에 관한 것이다. 또한, 식각속도가 빠르고 하부막 및 장비에 대한 손상이 없으며, 고가의 장비구성이 필요하지 않고 대면적화에 유리하며, 균일한 식각 특성을 갖기 때문에 우수한 생산성을 갖는 식각액 조성물에 관한 것이다.
티타늄, 알루미늄, 다층막, 습식, 식각액

5. 发明公开

KR1020140119884A 구리계 금속막 식각액 조성물 및 이를 이용한 배선 형성 방법 审中-实审
标题翻译：基于铜箔的金属层的蚀刻组合物和金属线的制备方法
公开(公告)号：KR1020140119884A
公开(公告)日：2014-10-13
申请号：KR1020130033685
申请日：2013-03-28
申请人： 동우 화인켐 주식회사
发明人： 이현규 , 김진성 , 이은원
IPC分类号： C23F1/18 , G02F1/136 , C09K13/00
CPC分类号： C23F1/18 , C09K13/00 , G02F1/136286 , G02F2001/136295
摘要： The present invention relates to a solution composition to collectively etch a cooper-based metal film and a metal oxide film, and a method to form wiring using the same. More specifically, the etching solution includes: 0.5-20 wt% of persulfate, 0.01-1.0 wt% of a compound containing fluoride, 0.1-5 wt% of an azole compound, 0.5-3 wt% of inorganic acid or salt thereof, and the remainder consisting of water. The etching composition has a taper profile with excellent straightness of an etched pattern.
摘要翻译：本发明涉及一种用于共同蚀刻基于铜的金属膜和金属氧化物膜的溶液组合物，以及使用其形成布线的方法。更具体地，蚀刻溶液包括：0.5-20重量％的过硫酸盐，0.01-1.0重量％的含氟化合物，0.1-5重量％的唑化合物，0.5-3重量％的无机酸或其盐，以及其余的由水组成。蚀刻组合物具有具有优异蚀刻图案的平直度的锥形轮廓。

6. 发明公开

KR1020140108795A 구리계 금속막 및 구리계 금속막과 금속산화물막의 적층막 식각액 조성물 및 이를 이용한 배선 형성 방법 审中-实审
标题翻译：基于铜箔的金属层和多层金属层和金属氧化物层的组合物及其制备金属线的方法
公开(公告)号：KR1020140108795A
公开(公告)日：2014-09-15
申请号：KR1020130021964
申请日：2013-02-28
申请人： 동우 화인켐 주식회사
发明人： 김진성 , 이은원 , 이현규
IPC分类号： C23F1/18 , C09K13/00 , G02F1/13
CPC分类号： C23F1/18 , C09K13/00 , G02F1/136286 , G02F2001/136295
摘要： The present invention relates to an etching solution composition for a copper-based metal film and a film on which a cooper-based metal film and a metal oxide film are laminated, and a method for forming wirings using the same etching solution. The etching solution includes 15-25 wt% of hydrogen peroxide, 0.01-1.0 wt% of a compound containing fluoride, 0.1-1.0 wt% of an Azole compound, 0.5-5 wt% of a soluble compound having a nitrogen atom and a carboxyl group in one molecule; 0.5-3.0 wt% of glycolic acid, 0.5-3.0 wt% of organic acid except for glycolic acid, 0.1-2.0 wt% of nitric acid, sulfuric acid or salts thereof, 0.001-5.0 wt% of a polyhydric alcohol type surfactant, and the remainder consisting of water. The etching solution: selectively etches the cooper-based metal film; imposes excellent straightness on a pattern etched; and has an enhanced taper profile.
摘要翻译：本发明涉及一种用于铜基金属膜的蚀刻溶液组合物和其上层叠有铜基金属膜和金属氧化物膜的膜，以及使用相同蚀刻溶液形成布线的方法。蚀刻溶液包含15-25重量％的过氧化氢，0.01-1.0重量％的含氟化合物，0.1-1.0重量％的唑类化合物，0.5-5重量％的具有氮原子的可溶性化合物和羧基一个分子; 0.5-3.0重量％的乙醇酸，0.5-3.0重量％的除了乙醇酸以外的有机酸，0.1-2.0重量％的硝酸，硫酸或其盐，0.001-5.0重量％的多元醇型表面活性剂和其余的由水组成。蚀刻溶液：选择性蚀刻铜基金属膜; 对蚀刻的图案施加极好的平直度; 并具有增强的锥形轮廓。

7. 发明公开

KR1020130049576A 액정표시장치용 어레이 기판의 제조방법 审中-实审
标题翻译：用于液晶显示的阵列基板的制造方法
公开(公告)号：KR1020130049576A
公开(公告)日：2013-05-14
申请号：KR1020110114676
申请日：2011-11-04
申请人： 동우 화인켐 주식회사
发明人： 이현규 , 이석 , 정경섭 , 이은원
IPC分类号： G02F1/136 , C09K13/00
CPC分类号： G02F1/1362 , C09K13/04 , H01L21/3213
摘要： PURPOSE: A method for fabricating an LCD array substrate is provided to prevent the lift-off of a semiconductor layer and to simplify a manufacturing process. CONSTITUTION: An active layer made of metal oxide semiconductor is formed on a gate insulating layer. A source/drain electrode is formed on the active layer. A pixel electrode connected to the drain electrode is formed. In the step for forming the active layer, a metal oxide semiconductor layer is formed on the gate insulating layer. The metal oxide semiconductor layer is etched by using an etchant composition including hydrogen peroxide 5-25 weight %, fluorocompound 0.01-1 weight%, and water.
摘要翻译：目的：提供一种用于制造LCD阵列基板的方法，以防止半导体层的剥离并简化制造工艺。构成：在栅绝缘层上形成由金属氧化物半导体制成的有源层。源极/漏电极形成在有源层上。形成连接到漏电极的像素电极。在形成有源层的步骤中，在栅极绝缘层上形成金属氧化物半导体层。通过使用包含5-25重量％的过氧化氢，0.01-1重量％的氟化合物和水的蚀刻剂组合物来蚀刻金属氧化物半导体层。

8. 发明公开

KR1020130021321A 금속 배선 형성방법 审中-实审
标题翻译：形成金属线的方法
公开(公告)号：KR1020130021321A
公开(公告)日：2013-03-05
申请号：KR1020120080798
申请日：2012-07-24
申请人： 동우 화인켐 주식회사
发明人： 이현규 , 이석 , 정경섭
IPC分类号： G02F1/1368 , C09K13/00
CPC分类号： G02F1/136286 , C09K13/00 , G02F2001/136295 , H01B1/026
摘要： PURPOSE: A method for forming a metal line is provided to prevent impact on a metal oxide layer in an etching process for a multi-metal layer made of Cu and metal oxide. CONSTITUTION: A metal oxide layer is formed on a substrate. A copper metal layer is formed on the metal oxide layer. A photoresist material is selectively left on the copper metal layer. An upper copper metal layer is etched by using etching solution which includes hydrogen peroxide, azole compound, phosphonic acid derivative, and water.
摘要翻译：目的：提供一种形成金属线的方法，以防止在由Cu和金属氧化物制成的多金属层的蚀刻工艺中对金属氧化物层的冲击。构成：在基板上形成金属氧化物层。在金属氧化物层上形成铜金属层。光致抗蚀剂材料选择性地留在铜金属层上。通过使用包括过氧化氢，唑类化合物，膦酸衍生物和水的蚀刻溶液蚀刻上部铜金属层。

9. 发明公开

KR1020100001624A 식각액 조성물 无效
标题翻译：蚀刻溶液组合物
公开(公告)号：KR1020100001624A
公开(公告)日：2010-01-06
申请号：KR1020080061609
申请日：2008-06-27
申请人： 동우 화인켐 주식회사
发明人： 임민기 , 이현규 , 장상훈
IPC分类号： C09K13/08 , C09K13/06
摘要： PURPOSE: An etching solution composition is provided to integrally wet-etching a single membrane and a multimembrane made of titanium or titanium alloy, aluminum or aluminum alloy, and to prevent the damage of equipment and underlayer. CONSTITUTION: An etching solution composition comprises H2O2 5-30 weight%, perfluorated compound 0.1-2 weight%, a compound containing an amino group and carboxyl group 1-10 weight%, phosphate 0.5-5 weight%, and the remaining amount of water. The perfluorinated compound is a compound capable of dissociating with fluorine ion or polyatomic fluorine ion. The compound containing an amino group and carboxyl group is at least one or two kinds selected from the group consisting of alamine, aminobutyric acid, glutamic acid, glycine, iminodiacetic acid, nitrilotriacetic acid and sarcosine.
摘要翻译：目的：提供一种蚀刻溶液组合物，以整体湿法蚀刻单一膜和由钛或钛合金，铝或铝合金制成的多层膜，并防止设备和底层的损坏。构成：蚀刻溶液组合物包含5-30重量％的H 2 O 2，0.1-2重量％的全氟化合物，含有1-10重量％的氨基和羧基的化合物，0.5-5重量％的磷酸盐和剩余的水量。全氟化合物是能够与氟离子或多原子氟离子解离的化合物。含有氨基和羧基的化合物是选自由胺，氨基丁酸，谷氨酸，甘氨酸，亚氨基二乙酸，次氮基三乙酸和肌氨酸组成的组中的至少一种或两种。

10. 发明公开

KR1020090095709A 금속 배선 형성을 위한 식각액 조성물 无效
标题翻译：用于形成金属线的蚀刻溶液组合物
公开(公告)号：KR1020090095709A
公开(公告)日：2009-09-10
申请号：KR1020080020809
申请日：2008-03-06
申请人： 동우 화인켐 주식회사
发明人： 김기섭 , 이승용 , 이준우 , 진영준 , 박영철 , 양승재 , 장상훈 , 임민기 , 이현규
IPC分类号： C23F1/16 , C23F1/14
CPC分类号： C23F1/18 , C09K13/04
摘要： An etchant composition for formation of metal lines is provided to secure stability of etchant and uniform etching performance, thereby preventing damage to underlayer and equipment. An etchant composition for formation of metal lines comprises H3PO4 40~70 weight%, HNO3 2~10 weight%, CH3COOH 5~20 weight%, organic acid 0.1~5 weight% except for CH3COOH, phosphate 0.1~5 weight%, a compound including amino radical and carboxyl group 0.1~5 weight%, and the rest water. The organic acid except for CH3COOH is made of one or two selected from the group consisting of butanoic acid, citric acid, formic acid, gluconic acid, glycolic acid, malonic acid, oxalic acid, pentanoic acid, and other water-soluble organic acid. The phosphate is made of sodium dihydrogen phosphate or/and otassium dihydrogen phosphate. The compound including compound including amino radical and carboxyl group is made of one or two selected from the group consisting of alanine compound, aminobutyric acid compound, glutamic acid compound, glycine compound, iminodiacetic acid compound, nitrilotriacetic acid compound, and sarcosine compound.
摘要翻译：提供用于形成金属线的蚀刻剂组合物以确保蚀刻剂的稳定性和均匀的蚀刻性能，从而防止对底层和设备的损坏。用于形成金属线的蚀刻剂组合物包括H 3 PO 4 40〜70重量％，HNO 3 2〜10重量％，CH 3 COOH 5〜20重量％，有机酸0.1〜5重量％，除了CH 3 COOH，磷酸盐0.1〜5重量％包括氨基和羧基为0.1〜5重量％，其余为水。除CH3COOH以外的有机酸由选自丁酸，柠檬酸，甲酸，葡萄糖酸，乙醇酸，丙二酸，草酸，戊酸等水溶性有机酸中的1种或2种制成。磷酸盐由磷酸二氢钠或/和磷酸二氢钾制成。包括氨基和羧基的化合物的化合物由选自丙氨酸化合物，氨基丁酸化合物，谷氨酸化合物，甘氨酸化合物，亚氨基二乙酸化合物，次氮基三乙酸化合物和肌氨酸化合物组成的组中的一种或两种制成。

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