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    • 4. 发明专利
    • Frequency divider circuit
    • 频率分路电路
    • JP2010187356A
    • 2010-08-26
    • JP2009166390
    • 2009-07-15
    • Sanyo Electric Co LtdSanyo Semiconductor Co Ltd三洋半導体株式会社三洋電機株式会社
    • TERADA SATOSHIKOFUCHI MASAHIROMAKABE TADAHIRO
    • H03K23/54H03K23/00H03K23/40
    • H03K23/40H03K21/12H03K23/50H03K23/667H03K23/68
    • PROBLEM TO BE SOLVED: To provide a frequency divider circuit capable of suppressing generation of a signal of an unwanted frequency.
      SOLUTION: The frequency divider circuit includes: a shift register capable of storing at least n-bit data configured to shift an input signal sequentially in synchronization with a clock signal; a pulse generating circuit configured to change the input signal into a pulse form in response to a change in logic level of an output signal from a stage of the shift register among n-bit output signals from the shift register, the stage corresponding to a bit resulting from shifting of the input signal by n bits; and a frequency dividing signal generating circuit configured to generate a frequency dividing signal whose logic level is inverted in response to a change in logic level of an output signal from any one stage of the shift register or logic level of the input signal, in order to divide the clock signal in frequency by a dividing ratio corresponding to the n bits.
      COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供一种能够抑制不想要的频率的信号的产生的分频器电路。 解决方案:分频器电路包括:移位寄存器,其能够至少存储配置成与时钟信号同步地顺序移位输入信号的n位数据; 脉冲发生电路,被配置为响应于来自移位寄存器的n位输出信号中的来自移位寄存器的级的输出信号的逻辑电平的变化而将输入信号改变为脉冲形式,对应于位 由输入信号移位n位导致的; 以及分频信号生成电路,其被配置为生成分频信号,该分频信号的逻辑电平响应于来自移位寄存器的任何一个级的输出信号或输入信号的逻辑电平的逻辑电平的变化而被反转,以便 将时钟信号的频率除以与n位对应的分频比。 版权所有(C)2010,JPO&INPIT
    • 7. 发明专利
    • Shift register
    • 移位寄存器
    • JP2008251061A
    • 2008-10-16
    • JP2007087960
    • 2007-03-29
    • Fuji Electric Device Technology Co Ltd富士電機デバイステクノロジー株式会社
    • YAMADA KOHEI
    • G11C19/28G11C19/00H03K3/037H03K23/54
    • PROBLEM TO BE SOLVED: To provide a shift register in which shift register operation can be achieved in a small chip area and which can be operated only by rise (or fall) edge of a clock input. SOLUTION: When a control signal CK(36) is low and a control signal CKb(37) is high, an input signal D(11) is applied to the inverter 14 of a latch cell 13 through a switch 12, the output signal of the inverter 14 is reversed by an inverter 16 as the output of the latch cell 13 and becomes a shift output Q0(17). The switch 18 is operated at the point of time of fall of the control signal CKb(37), that is, at the point of time of rise of a clock input CK_in(34), and the output of the latch cell 13 is passed, in addition to an inverter 20 of a latch cell 19, the output of the inverter 20 becomes a shift output Q1(22) as the output of the latch cell 19. In the same way, the input signal D(11) is transmitted successively to shift output Q2(28), Q3(33). COPYRIGHT: (C)2009,JPO&INPIT
    • 要解决的问题:提供一种移位寄存器,其中可以在小芯片区域中实现移位寄存器操作,并且可以仅通过时钟输入的上升沿(或下降沿)操作。 解决方案:当控制信号CK(36)为低电平且控制信号CKb(37)为高电平时,输入信号D(11)通过开关12施加到锁存单元13的反相器14, 逆变器14的输出信号由作为锁存单元13的输出的反相器16反转而成为移位输出Q0(17)。 开关18在控制信号CKb(37)的下降点,即在时钟输入CK_in(34)的上升点的时间点运行,并且锁存单元13的输出通过 除了锁存单元19的反相器20之外,反相器20的输出变为作为锁存单元19的输出的移位输出Q1(22)。同样地,传输输入信号D(11) 连续地输出Q2(28),Q3(33)。 版权所有(C)2009,JPO&INPIT
    • 8. 发明专利
    • Semiconductor device, manufacturing method therefor, and electric instrument
    • 半导体器件及其制造方法和电子仪器
    • JP2008091943A
    • 2008-04-17
    • JP2007303777
    • 2007-11-22
    • Nec Corp日本電気株式会社
    • TANABE HIROSHITAIDA SHIYUNJI
    • H01L29/786G09G3/20G09G3/36H03K23/54
    • PROBLEM TO BE SOLVED: To provide a semiconductor device stable in operation of a transistor for a long term use, to provide a liquid crystal display panel, to provide an electronic instrument equipped therewith, and to provide the manufacturing method of the semiconductor device. SOLUTION: The transistor T5 is used in such a manner that the absolute value of its threshold voltage varies in its increasing direction, and the transistor T6 is used as varying in its decreasing direction. Phosphorus is injected in the channel regions 5 and 6 of the transistors T5 and T6 with concentration of 1×10 12 cm -2 and 3×10 12 cm -2 respectively. Consequently, the absolute value of the threshold voltage is made smaller in the transistor T5 at the beginning of its manufacture than that in the transistor T6. COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:为了提供一种在长期使用的晶体管的操作中稳定的半导体器件,提供一种液晶显示面板,以提供其配备的电子仪器,并提供半导体的制造方法 设备。 解决方案:晶体管T5以其阈值电压的绝对值在其增加的方向上变化的方式使用,并且晶体管T6在其减小的方向上被使用变化。 将磷注入晶体管T5和T6的沟道区域5和6中,浓度为1×10 12 -22 / SP> 3×10 SP>厘米 -2 。 因此,晶体管T5的制造开始时的阈值电压的绝对值比晶体管T6小。 版权所有(C)2008,JPO&INPIT