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1. 发明专利

JP2005133171A Method for etching chromium film, and method for manufacturing photomask 有权
标题翻译：蚀刻铬膜的方法和制造光电子的方法
公开(公告)号：JP2005133171A
公开(公告)日：2005-05-26
申请号：JP2003372085
申请日：2003-10-31
申请人： Semiconductor Leading Edge Technologies Inc , Ulvac Japan Ltd , Ulvac Seimaku Kk , アルバック成膜株式会社 , 株式会社アルバック , 株式会社半導体先端テクノロジーズ
发明人： TANAKA YOSHIYUKI , HARASHIMA NORIYUKI , SASAKI TAKAHIDE , KUWABARA KIYOSHI , HAYASHI TOSHIO
IPC分类号： H05H1/46 , C23F4/00 , G03F1/54 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide a method for etching a chromium film uniformly within the surface with a high etching rate, when etching the film with the use of an etching apparatus using a magnetic neutral line.
SOLUTION: The etching apparatus comprises a magnetic coil for forming the magnetic neutral line inside a vacuum chamber, and an antenna for forming an alternating electric field along the magnetic neutral line to generate dense plasma in the vicinity of the magnetic neutral line. In the method for etching the chromium film using the etching apparatus, when a magnetic field gradient in the vicinity of the magnetic neutral line formed by the magnetic coil is controlled to 2 gauss/cm, the magnetic neutral line with a radius of 35 mm or smaller, is formed by controlling a value of a current passing through the magnetic coil and the magnetic neutral line generates plasma.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供以高蚀刻速率在表面内均匀蚀刻铬膜的方法，当使用使用磁性中性线的蚀刻装置蚀刻该膜时。解决方案：蚀刻装置包括用于在真空室内形成磁中性线的磁线圈，以及用于沿着磁中性线形成交变电场的天线，以在磁中性线附近产生致密等离子体。在使用蚀刻装置蚀刻铬膜的方法中，当由磁性线圈形成的磁性中性线附近的磁场梯度被控制为2高斯/ cm时，半径为35mm的磁性中性线或通过控制通过磁线圈的电流的值而形成的较小，并且磁性中性线产生等离子体。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2004294786A Pellicle 审中-公开
公开(公告)号：JP2004294786A
公开(公告)日：2004-10-21
申请号：JP2003087396
申请日：2003-03-27
申请人： Semiconductor Leading Edge Technologies Inc , 株式会社半導体先端テクノロジーズ
发明人： TANAKA YOSHIYUKI
IPC分类号： G03F1/64 , H01L21/027 , G03F1/14
摘要： PROBLEM TO BE SOLVED: To provide a pellicle which enables air therein to be efficiently replaced.
SOLUTION: The pellicle has a pellicle film 2 and a square pellicle frame 3 supporting the pellicle film 2, and has vent holes 8, 9 formed in one side face 6 of the pellicle frame 3 and in the other side face 7 opposing to the first side face 6, respectively, with 50% to 90% hole area rate with respect to the one side face or the other side face. The vent holes 8, 9 are preferably provided with a dust preventing filter and a chemical filter. The four corners of the pellicle frame 3 are preferably provided with reinforcing plates 15, 16, 17, 18.
COPYRIGHT: (C)2005,JPO&NCIPI

3. 发明专利

JP2005265676A Sample measuring method using atomic force microscope and sample measuring system therefor 审中-公开
标题翻译：使用原子力显微镜和其样品测量系统的样品测量方法
公开(公告)号：JP2005265676A
公开(公告)日：2005-09-29
申请号：JP2004080013
申请日：2004-03-19
申请人： Semiconductor Leading Edge Technologies Inc , 株式会社半導体先端テクノロジーズ
发明人： TANAKA YOSHIYUKI
IPC分类号： G01Q30/20 , G01Q60/24 , G01N13/16
摘要： PROBLEM TO BE SOLVED: To enhance the measuring precision of an atomic force microscope by destaticizing a sample efficiently without applying load to a sample measuring system when the sample is measured using the atomic force microscope.
SOLUTION: A static eliminator 4 and a charge monitor 3 are arranged and the charge monitor 3 is controlled on the basis of the position of the probe 2 of the atomic force microscope by a monitor position control means 7 so as to measure the charge quantity in the periphery of the position of the probe 2 of the sample 1. For example, the position of the charge monitor 3 is controlled so as to always arrange the charge monitor 3 in the vicinity of the probe 2 or the monitor positioned in the vicinity of the probe 2 is selected from a plurality of the charge monitors and charge quantity is measured by the monitor. A static elimination control means 8 is constituted so as to operate the static eliminator 4 for a definite time when the charge quantity measured by the charge monitor 3 exceeds a predetermined value to destaticize the sample.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：当使用原子力显微镜测量样品时，通过使样品有效地对样品测量系统施加负载来有效地对样品进行去电，来提高原子力显微镜的测量精度。
解决方案：安排静电消除器4和充电监视器3，并且通过监视器位置控制装置7基于原子力显微镜的探针2的位置来控制充电监视器3，以便测量例如，电荷监视器3的位置被控制为总是将电荷监视器3布置在探针2附近或位于探针2的监视器的附近从多个充电监视器中选择探头2的附近，并且由监视器测量充电量。当静电消除控制装置8被构造成当由充电监视器3测量的充电量超过预定值以使样本静电时，将静电消除器4操作一定时间。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2005134704A Method for correcting pattern film 审中-公开
标题翻译：校正图案的方法
公开(公告)号：JP2005134704A
公开(公告)日：2005-05-26
申请号：JP2003371746
申请日：2003-10-31
申请人： Semiconductor Leading Edge Technologies Inc , Sii Nanotechnology Inc , エスアイアイ・ナノテクノロジー株式会社 , 株式会社半導体先端テクノロジーズ
发明人： OZAWA HISAYA , TANAKA YOSHIYUKI , YASAKA KOJIN
IPC分类号： G01N23/225 , G03F1/72 , G03F1/74 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To correct the pattern of a photomask with high accuracy.
SOLUTION: Three points of reference patterns 3a, 3b, 3c are formed to surround a defect of a pattern 2. After the positions of the reference patterns 3a, 3b, 3c are recorded, a process region 4 including the defect is determined and the extent of the process region 4 and a reference point 5 are recorded. The relative positional relation between the reference patterns 3a, 3b, 3c and the reference point 5 is recorded. After each position of the reference patterns 3a, 3b, 3c is reconfirmed, the process region 4 is repeatedly irradiated with a beam. The position of the reference patterns 3a, 3b, 3c is confirmed while the region is being irradiated with the beam. When the position of the process region 4 is to be corrected by using the reference patterns 3a, 3b, 3c, the position correction of the process region 4 from a displaced reference pattern 3a' is stopped, and the position of the process region 4 is corrected from the rest of reference patterns 3b, 3c.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：以高精度校正光掩模的图案。解决方案：形成三个参考图案3a，3b，3c，以围绕图案2的缺陷。在参考图案3a，3b，3c的位置被记录之后，确定包括缺陷的处理区域4 并且记录处理区域4和参考点5的范围。记录基准图案3a，3b，3c与基准点5之间的相对位置关系。在再次确认参考图案3a，3b，3c的每个位置之后，用光束重复地照射处理区域4。在用光束照射该区域的同时确认参考图案3a，3b，3c的位置。当通过使用参考图案3a，3b，3c来校正处理区域4的位置时，停止从位移参考图案3a'的处理区域4的位置校正，并且处理区域4的位置为从参考图案3b，3c的其余部分校正。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2004354720A Pellicle for mask 审中-公开
标题翻译：面包片
公开(公告)号：JP2004354720A
公开(公告)日：2004-12-16
申请号：JP2003152629
申请日：2003-05-29
申请人： Semiconductor Leading Edge Technologies Inc , 株式会社半導体先端テクノロジーズ
发明人： TANAKA YOSHIYUKI , TANAKA KEIJI
IPC分类号： G03F1/62 , G03F1/64 , G03F1/14
摘要： PROBLEM TO BE SOLVED: To make easily replacable inert gas in a corner part of a pellicle frame and to make efficiently replacable inert gas in the pellicle in a short time. SOLUTION: A pellicle plate is adhered to the upper end face of a square pellicle frame, and the pellicle frame is provided with an aeration part near each of four corners to connect the inside and the outside of the pellicle. The aeration part is preferably an aeration hole formed in the pellicle frame or is preferably a notch formed in the pellicle frame. COPYRIGHT: (C)2005,JPO&NCIPI

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